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High-dimensional neural-network artificial intelligence capable of quick learning to recognize a new smell, and gradually expanding the database

High-dimensional neural-network artificial intelligence capa...

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International Conference on Digital Information Processing, Data Mining, and Wireless Communications (DIPDMWC)

作者： A.I. Ivanov V.P. Kulagin Y.M. Kuznetsov G.M. Chulkova A.D. Ivannikov Laboratory of biometric and neural network technologies Penza Research Electrotechnical Institute Penza Russia National Research University Higher School of Economics Moscow Russia The Institute for Design Problems in Microelectronics of Russian Academy of Sciences Moscow Russia

ISBN: (纸本)9781467393805

We demonstrate that classical quadratic forms are not able to solve the problem of recognizing high-dimensional images. The “deep” Galushkin-Hinton neural networks can solve the problem of high-dimensional image recognition, but their training has exponential computational complexity. It is technically impossible to train and retrain a “deep” neural network rapidly. For mobile “artificial nose” systems we proposed to employ a number of “wide” neural networks trained in accordance with (GOST R 52633.5-2011). This standardized learning algorithm has a linear computational complexity, i.e. for each new smell image a time of about 0.3 seconds is sufficient for creating and training a new neural network with 2024 inputs and 256 outputs. This leads to the possibility of the rapid training of the artificial intelligence “artificial nose” and a gradual expansion of its database consisting of 10 000 or more trained artificial neural networks.

关键词： Databases Biological system modeling

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Sallen-Key High-Pass Filter with Unrelated Tune of Generic Parameter 23

Sallen-Key High-Pass Filter with Unrelated Tune of Generic P...

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23rd IEEE International Conference of Young Professionals in Electron Devices and Materials, EDM 2022

作者： Denisenko, Darya Yu. Prokopenko, Nikolay N. Ivanov, Yuri I. Butyrlagin, Nikolay N. Don State Technical University Department of Scientific Research Rostov-on-Don Russia Southern Federal University Department of Automatic Control Systems Rostov-on-Don Russia Department of Information Systems and Radio Engineering Don State Technical University Zelenograd Rostov-on-Don Russia Institute for Design Problems in Microelectronics of Russian Academy of Sciences Zelenograd Rostov-on-Don Russia

ISBN: (纸本)9781665498043

New second order high-pass filter of the Sallen-Key family circuit is considered, where there is unrelated tune of generic parameters by a digitally controlled resistor - the pole frequency, Q-factor pole and the scale transfer coefficient. The basic mathematical expressions of transfer function for proposed high-pass filter are obtained. A comparison of the parameters of the known and new schemes is given. A Sallen-Key high-pass filter circuit based on a high-frequency emitter follower has been developed. The results of high-pass filter modeling in the Micro-Cap 12 environment using the OP37 operational amplifier and an ideal buffer amplifier are presented. Computer simulation has shown that the pole frequency is adjusted by resistor R5. Adjusting the pole attenuation is possible by changing the resistor R3, while the pole attenuation frequency unchanged, an increase in R3 leads to an increase of the pole attenuation. © 2022 IEEE.

关键词： Operational amplifiers

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design Features of the Second-Order Active Band-Pass Filters with Independent Adjustment of Critical Parameters

Design Features of the Second-Order Active Band-Pass Filters...

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National Conference with International Participation (ELECTRONICA)

作者： Darya Yurievna Denisenko Nikolay Nikolaevich Prokopenko Evgeniy Viktorovich Butovka Don State Technical University Rostov-on-Don Russia Institute for Design Problems in Microelectronics of Russian Academy of Sciences Zelenograd Russia JSC “Progress Microelectronic Research Institute” (JSC “Progress MRI”) Moscow Russia

ISBN: (数字)9781728175317

ISBN: (纸本)9781728175324

Nowadays, it is urgent to develop a new generation of active RC filters, which allow for independent tuning of the critical parameters. This makes it easier to build new devices. The paper considers the generalized architecture of a new population of active RC band-pass filters (ARCFs) in which the independent adjustment of the critical parameters in the pass band is possible. As an example the equations for the transfer functions and their coefficients for two new ARCF modifications are given, which allow for the parametric synthesis of the definite design solutions. The results of modeling in the Micro-CAP program are discussed, confirming the advantages of the ARCFs of the considered family.

关键词： Band-pass filters Tuning Attenuation Resistors Operational amplifiers Patents Statistics

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An SEU (Single-event Upset) Mitigation Strategy on Read-Write Separation SRAM Cell for Low Power Consumption

An SEU (Single-event Upset) Mitigation Strategy on Read-Writ...

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International Conference on Solid-State and Integrated Circuit Technology

作者： Ze-Xin Su Bo Li Xiao-Hui Su Fan-Yu Liu Zheng-Sheng Han Xin-Yu Liu Konstantin O. Pctrosyants Igor A. Kharitonov University of Chinese Academy of Sciences Beijing China Key Laboratory of Silicon Device and Technology Institute of Microelectronics Chinese Academy of Sciences Beijing China Institute for Design Problems in Microelectronics of Russian Academy of Sciences (IPPM RAS) National Research University Higher School of Economics

ISBN: (数字)9781728162355

ISBN: (纸本)9781728162362

SRAM for space applications continues to be disturbed by highly energetic charged particles along with technology node scaling, that is the single-event upset (SEU) in terms of time perspective. A 14T read-write separation SRAM cell in low power mode is proposed using radiation hardened by design (RHBD) technique, not only robust to SEU but also retaining the same performance as the 8T counterpart. The simulation results verify that the 14T SRAM cell is immune to single-point upsets and improves tolerance towards double-point upsets.

关键词： SRAM cells Single event upsets Writing Radiation hardening (electronics) Simulation Threshold voltage Power demand

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The Two-Channel Instrumentation Amplifier Based on a New Radiation-Hardened Microcircuit MH2XA010–03 for Reading Signals of Differential Piezoelectric Converters

The Two-Channel Instrumentation Amplifier Based on a New Rad...

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Annual Siberian Russian Workshop on Electron Devices and Materials (EDM)

作者： Oleg V. Dvornikov Valentin L. Dziatlau Vladimir A. Tchekhovski Nikolay N. Prokopenko Arthur I. Gulin Anna V. Bugakova JSC “Minsk Scientific and Research Instrument-Making Institute” Minsk Belarus Research Institute for Nuclear Problems of Belarusian State University Minsk Belarus Institute for Design Problems in Microelectronics of Russian Academy of Sciences Zelenograd Russia Ufa State Petroleum Technological University Ufa Russia Don State Technical University Rostov-on-Don Russian

The signal readout channel of differential piezoelectric transducers based on the semicustom integrated circuit (IC) MH2XA010-03 is studied. The developed electrical circuit is presented and the results of measurements of the main parameters of the IC, oriented to the use in acoustic systems of measuring the temperature of the gas stream of reactive engines are presented. This measuring system includes two jet-acoustic sensors, piezoelectric converters, low-pass filters and a two-channel instrumentation amplifier made on the elements of the MH2XA010-03 chip.

关键词： Instruments Piezoelectric transducers Sensors Pins Temperature measurement Electron devices Integrated circuits

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Comparison of Fast Response and Noise of Charge-Sensitive Amplifiers with Various Types of Input Fets

Comparison of Fast Response and Noise of Charge-Sensitive Am...

引用

International Symposium on Industrial Electronics (INDEL)

作者： Oleg V. Dvornikov Vladimir A. Tchekhovski Nikolay N. Prokopenko Alexey E. Titov Minsk Scientific and Research Instrument-Making Institute JSC (MNIPI JSC) Minsk Belarus Research Institute for Nuclear Problems Belarusian State University (RINP BSU) Minsk Belarus Institute for Design Problems in Microelectronics of RAS Don State Technical University Rostov-on-Don Zelenograd Russia South Federal University Rostov-on-Don Russia

ISBN: (数字)9781728198637

ISBN: (纸本)9781728198644

The circuit simulation results of the charge-sensitive amplifiers (CSA) with various types of input field-effect transistors (FET) are considered. CSA-1 and CSA-2 are implemented on Si bipolar transistors, besides in CSA-1 the input transistor is a Si field-effect transistor with p-n junction (Junction Field Effect Transistor, JFET) and in CSA-2 - a GaAs FET with a gate formed by Schottky contact (metalized semiconductor FET, MESFET). CSA-3 is developed completely on the GaAs MESFET. In order to adequately compare the CSAs with respect to the rise-time τ of the output pulses and the equivalent noise charge (ENC), all input transistors were selected with approximately equal drain current and the ratio of the gate width to the length W/L. The electrical circuits of the CSAs, the simulation results of the operating mode, the critical parameters, the dependence of τ and the ENC on the capacity of the input signal source C D are presented.

关键词： MESFETs Resistors Gallium arsenide JFETs Capacitance Silicon Transconductance

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Band-Pass ARC-Filter with Pole Frequency, Pole Decay and Transfer Ratio Independent Adjustment

Band-Pass ARC-Filter with Pole Frequency, Pole Decay and Tra...

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International Conference on Electrical Machines, Drives and Power Systems (ELMA)

作者： Darya Yu. Denisenko Evgeny A. Zhebrun Nikolay N. Prokopenko Yuriy Iv. Ivanov Don State Technical University Rostov-on-Don Russia JSC "Progress Microelectronic Research Institute" (JSC "Progress MRI") Institute for Design Problems in Microelectronics of RAS Zelenograd Russia Southern Federal University Taganrog Russia

ISBN: (纸本)9781728114149

We have discussed properties of band-pass ARC-filters' (ARCF) new circuit, in which it is possible to adjust the following basic parameters independently: pole frequency (ω p ), pole decay (d p ) and transfer ratio in band-pass (M). We have obtained basic expressions, which allow synthesizing ARCF. We have presented adjustment algorithm and computer simulation results, which show that it is possible to adjust the parameters ω p , d p , M independently in the suggested ARCF circuit solution, for example, using digital potentiometers microcircuits.

关键词： Band-pass filters Resistors Resistance Filtering theory Optical filters Transfer functions

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New version of automated electro-thermal analysis in Mentor Graphics PCB design System

New version of automated electro-thermal analysis in Mentor ...

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East-West design & Test Symposium (EWDTS)

作者： K.O. Petrosyants P.A. Kozynko I.A. Kharitonov A.V. Sidorov Y. N. Chichkanov Institute for Design Problems in Microelectronics of Russian Academy of Sciences (IPPM RAS) Mentor Graphics Training Center - MIEM Moscow Russia Electronics and Electrical Engineering Dept. Moscow State Institute of Electronics and Mathematics Research Institute of Automatics Moscow Russia

ISBN: (纸本)9781479920976

Automated electro-thermal analysis is realized in the last version of Mentor Graphics PCB design System. The special software tool AETA is developed and integrated into the Expedition Enterprise PCB design System to automate the process of power-temperature traffic between electrical and thermal simulators. Furthermore AETA provides the graphical user interface and the possibility to use the different versions of Mentor Graphics software.

关键词： Graphics Temperature measurement Data models Manuals Software tools Accuracy Thermal analysis

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Modified Low-Frequency Filter for Signal Spectrum Limitation at Analog-Digital Converter’s Input with Differential Input

Modified Low-Frequency Filter for Signal Spectrum Limitation...

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International Conference on Electrical Machines, Drives and Power Systems (ELMA)

作者： D. Yu. Denisenko E. A. Zhebrun N. N. Prokopenko Yu. I. Ivanov Don State Technical University Rostov-on-Don Russia JSC "Progress Microelectronic Research Institute" (JSC "Progress MRI") Moscow Russia Institute for Design Problems in Microelectronics of RAS Zelenograd Russia Southern Federal University Taganrog Russia

ISBN: (纸本)9781728114149

We have considered a modified architecture of the third order low-frequency filter (LFF), intended to be applied as an anti-alias filter on inputs of analog-digital converters (ADC's) with differential input. We have obtained conditions for low-frequency filter's circuit parametrical synthesis. We have shown results of suggested LFF simulation and compared its amplitude-frequency characteristics (AFC's) at different frequencies of applied operational amplifiers' (OP-AMP's) unity gain (AD8132, THS4131).

关键词： Low pass filters Filtering theory Band-pass filters Microwave filters Transfer functions Optical filters

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Comparison of Complementary JFET Parameters on Technological Processes of JSC "Integral" (Minsk) and JSC "SPE "Pulsar" (Moscow) at Low Temperatures

Comparison of Complementary JFET Parameters on Technological...

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Moscow Workshop on Electronic and Networking Technologies (MWENT)

作者： Oleg V. Dvornikov Valentin L. Dziatlau Vladimir A. Tchekhovski Nikolay N. Prokopenko Dmitry G. Drozdov Eugene M. Savchenko Minsk Research Instrument-Making Institute Minsk Belarus Institute for Nuclear Problems of Belarusian State University Minsk Belarus Institute for Nuclear Problems Belarusian State University Minsk Belarus Don State Technical University Institute for Design Problems in Microelectronics of RAS Rostov-on-Don Zelenograd Russia JSC "Scientific and Production Enterprise "Pulsar" Moscow Russia Russian Technological University (MIREA) Moscow Russia

ISBN: (数字)9781728125725

ISBN: (纸本)9781728125732

The volt-ampere characteristics (VAC) at temperatures from minus 197 ° C to 30 ° C of n-JFET and p- JFET, manufactured at JSC "SPE "Pulsar" using a complementary bipolar technological route, are considered. Features of the VACs are described and the obtained temperature approximations of the main parameters are given. We have compared the JFET's VACs manufactured at JSC "SPE "Pulsar" and JSC "Integral".

关键词： JFETs Semiconductor device measurement Temperature sensors Cryogenics Threshold voltage Temperature dependence

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