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检索条件"机构=Research Institute of Design Problems in Microelectronics"
86 条 记 录,以下是71-80 订阅
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Simulation and synthesis of networks-on-chip by using NoCSimp HDL library
Simulation and synthesis of networks-on-chip by using NoCSim...
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IEEE International Conference on Electronics and Nanotechnology (ELNANO)
作者: A. Yu. Romanov A. D. Ivannikov I. I. Romanova National Research University Higher School of Economics Moscow Russian Federation The Institute for Design Problems in Microelectronics of Russian Academy of Sciences Moscow Zelenograd Russian Federation Computer Systems and Networks dept. of State Higher Educational Institution Kyiv Electromechanical College Kyiv Ukraine
This paper proposes an approach to the synthesis and modeling of networks-on-chip (NoCs) by using the NoCSimp library based on a simplified wormhole router with central buffer and without virtual channels. The analysi... 详细信息
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Non-destructive testing of electronic components overheating using infrared thermography  8
Non-destructive testing of electronic components overheating...
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8th International Workshop NDT in Progress 2015
作者: Petrosyants, Konstantin O. Kharitonov, Igor A. Department of Electronic Engineering National Research University Higher School of Economics Moscow Institute of Electronics and Mathematics Moscow Russia Institute for Design Problems in Microelectronics Russian Academy of Sciences Moscow Russia
Software-hardware IR thermography subsystem for non-destructive testing of electronic components overheating has been developed. IR measuring part included: Flir Thermovision A40 infrared camera with 17 mkm macro lens... 详细信息
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Bifurcations in the dynamical system for three-layered magnetic valve  6th
Bifurcations in the dynamical system for three-layered magne...
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6th Moscow International Symposium on Magnetism, MISM 2014
作者: Ostrovskaya, Natalia Skidanov, Vladimir Iusipova, Iuliia Institute for Design Problems in Microelectronics RAS Sovetskaya street 3 Zelenograd Moscow124365 Russia National Research University of Electronic Technology Solnechnaya Alleya 5 Zelenograd Moscow124498 Russia
Magnetization dynamics in a three-layered nanopillar Co/Cu/Co structure with one fixed and one free layer driven by external magnetic field and spin-polarized electric current was investigated using methods of the the... 详细信息
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Methods of increasing the fault-tolerance of Control Unit by introducing hardware redundancy
Methods of increasing the fault-tolerance of Control Unit by...
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Internet Technologies and Applications (ITA)
作者: A. Soloviev A. Stempkovsky D. Kaleev The Institute for Design Problems in Microelectronics Moscow Russian Federation National Research University of Electronic Technology Moscow Russian Federation
The method of increasing the fault-tolerance of Control Unit is proposed. The main idea is to successively “contract” all values of output signals of Control Unit and to obtain final signature of convolution. It is ... 详细信息
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Quasi – 3D Electrical and Thermal Modeling of Microelectronic Semiconductor Devices
Quasi – 3D Electrical and Thermal Modeling of Microelectron...
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2015 International Conference on Simulation, Modelling and Mathematical Statistics(SMMS 2015)
作者: Konstantin O.PETROSYANTS Nikita I.RYABOV National Research University Higher School of Economics Moscow Institute of Electronics and Mathematics Institute for Design Problems in Microelectronics Russian Academy of Sciences
New quasi – 3D numerical model for electrical and thermal analysis of microelectronic semiconductor devices is presented. The general 3D heat transfer and electrical field problems are correctly transformed to the se... 详细信息
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Electro-thermal modeling of trench-isolated SiGe HBTs using TCAD
Electro-thermal modeling of trench-isolated SiGe HBTs using ...
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IEEE Symposium on Semiconductor Thermal Measurement and Management (SEMI-THERM)
作者: K. O. Petrosyants R. A. Torgovnikov National Research University Higher School of Economics Moscow Institute of Electronics and Mathematics Moscow Russia Russian Academy of Sciences Institute for Design Problems in Microelectronics
The modern SiGe HBT structure with shallow and deep trench isolation (STI and DTI) is analyzed from electrothermal standpoint using TCAD system. The electrical parameters β, f T , f max , maximal temperature T max , ... 详细信息
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Methods of logical synthesis for library elements and blocks with regular layout structure
Methods of logical synthesis for library elements and blocks...
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IEEE International Conference on Electronics and Nanotechnology (ELNANO)
作者: Sergey Gavrilov Galina Ivanova Pavel Volobuev Aram Manukyan The Institute for Design Problems in Microelectronics Russian Academy of Science Moscow Zelenograd Russia National Research University of Electronic Technology (MIET) Moscow Zelenograd Russia
The paper is devoted to research and development of custom IP-blocks design methods in the form of standard elements with regular layout structure in the layers of polysilicon and diffusion. For today the leading deve... 详细信息
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SOI/SOS MOSFET universal compact SPICE model with account for radiation effects
SOI/SOS MOSFET universal compact SPICE model with account fo...
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International Conference on Ultimate Integration of Silicon, ULIS
作者: Konstantin O. Petrosyants Igor A. Kharitonov Lev M. Sambursky National Research University Higher School of Economics Moscow Institute of Electronics and Mathematics Institute for Design Problems in Microelectronics Russian Academy of Sciences Moscow Russia Nacional'nyj issledovatel'skij universitet Vyssaa skola ekonomiki Moskva Moskovaskaa oblast' RU
Universal SPICE model for submicron SOI/SOS MOSFETs based on BSIMSOI and EKV-SOI platforms with account for total ionizing dose-induced effects (TID), pulsed radiation effects, single events is presented. A special su... 详细信息
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Rad-Hard Versions of SPICE MOSFET Models for Effective Simulation of SOI/SOS CMOS Circuits Taking into Account Radiation Effects
Rad-Hard Versions of SPICE MOSFET Models for Effective Simul...
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European Conference on Radiation and its Effects on Components and Systems
作者: Konstantin O. Petrosyants Igor A. Kharitonov Lev M. Sambursky Alexander S. Mokeev Institute for Design Problems in Microelectronics Russian Academy of Sciences National Research University "Higher School of Economics" (Moscow Institute of Electronics and Mathematics)
SPICE modeling of SOI/SOS MOSFETs with account for static (total dose) and dynamic (heavy ions and transient ionizing radiation) radiation-induced effects including SPICE models, model parameter extraction and applica... 详细信息
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IV-Characteristics Measurement Error Resulting from Long Cables for Irradiated Bipolar Junction Transistors
IV-Characteristics Measurement Error Resulting from Long Cab...
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2014 4th International Conference on Advanced Measurement and Test(AMT 2014)
作者: Konstantin O.Petrosyants Igor A.Kharitonov Lev M.Sambursky Maxim V.Kozhukhov Moscow Institute of Electronics and Mathematics National Research University“Higher School of Economics” Institute for Design Problems in Microelectronics Russian Academy of Sciences
I-V-characteristics of an irradiated transistor in many cases should be measured inside the radiation chamber with long cables,which introduces noticeable measurement *** this paper I-V-characteristics of an irradiate... 详细信息
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