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IEEE International Conference on Electronics and Nanotechnology (ELNANO)

作者： Roman A. Solovyev Maxim Vakhrushev Alexander Radionov Irina I. Romanova Aleksandr A. Amerikanov Vladimir Aliev Alexey A. Shvets Institute for Design Problems in Microelectronics of Russian Academy of Sciences Moscow Russia 2GIS Novosibirsk Russia National Research University Higher School of Economics Moscow Russia NGSLab Moscow Russia Massachusetts Institute of Technology Boston USA

ISBN: (数字)9781728197135

ISBN: (纸本)9781728197142

Automatic classification of sound commands is becoming increasingly important, especially for embedded and mobile devices. Many of these devices contain both microphones and cameras. The manufacturers that develop and produce them would like to use the same methodology for sound and image classification tasks. It's possible to achieve by representing sound commands as images, and then use convolutional neural networks when classifying images as well as sounds. In this research, we tried several approaches to the problem of sound classification that we applied in TensorFlow Speech Recognition Challenge organized by Google Brain team on the Kaggle platform. Here we show different representations of sounds (Wave frames, Spectrograms, Mel-Spectrograms, MFCCs) and apply several 1D and 2D convolutional neural networks to get the best performance. As a novelty of our work, we developed and trained from scratch two 1d network architectures that are topologically similar to 2d VGG and ResNet network types. These networks show similar performance with 2d networks when sound signal is represented by using melgrams. Our experiments reveal that we found appropriate sound representation and corresponding convolutional neural networks. As a result, we achieved good classification accuracy (91.8%) that allowed us to finish the challenge on 8-th place among 1315 teams.

关键词： convolutional neural nets image classification learning (artificial intelligence) speech recognition Image classification Speech recognition SOUND Vibration Hearing commands audio signals Automatic classification Microphone Device Component Neural network Novelty

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Algebraic models of digital system design debugging decomposition

Algebraic models of digital system design debugging decompos...

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East-West design & Test Symposium (EWDTS)

作者： Alexander Ivannikov Vladimir Kulagin Aleksandr Romanov Boris Pozdneev Problems in Microelectronics of Russian Academy of Sciences The Institute for Design Moscow Russian Federation National Research University Higher School of Economics Moscow Russian Federation Moscow State University of Technology “STANKIN” Moscow Russian Federation

ISBN: (纸本)9781509006946

Due to the complexity and large dimensions of the task of digital system design debugging decomposition by method of modeling as a whole, algebraic models of decomposition methods are proposed, namely, methods of vertical and horizontal structure decomposition, functional decomposition, decomposition based on error types. An algebraic model of the digital systems software is presented. The software is considered as a semi group of operators.

关键词： Debugging Digital systems Software Hardware Microprogramming Computational modeling Timing

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SOI/SOS MOSFET universal compact SPICE model with account for radiation effects

SOI/SOS MOSFET universal compact SPICE model with account fo...

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International Conference on Ultimate Integration of Silicon, ULIS

作者： Konstantin O. Petrosyants Igor A. Kharitonov Lev M. Sambursky National Research University Higher School of Economics Moscow Institute of Electronics and Mathematics Institute for Design Problems in Microelectronics Russian Academy of Sciences Moscow Russia Nacional'nyj issledovatel'skij universitet Vyssaa skola ekonomiki Moskva Moskovaskaa oblast' RU

Universal SPICE model for submicron SOI/SOS MOSFETs based on BSIMSOI and EKV-SOI platforms with account for total ionizing dose-induced effects (TID), pulsed radiation effects, single events is presented. A special subcircuit consisting of parasitic transistors for sidewall and backgate leakage currents and other elements is connected to the standard SPICE model. In addition, the radiation-dependent parameters are described by physically based mathematical equations. Model parameter extraction methodology is described. Examples of rad-hard SOI/SOS CMOS circuits simulation are presented.

关键词： Semiconductor device modeling Integrated circuit modeling MOSFET Mathematical model Radiation effects CMOS integrated circuits

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The impact of radiation on volt-ampere characteristics of SiGe transistors

The impact of radiation on volt-ampere characteristics of Si...

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Telecommunications Forum (TELFOR)

作者： Oleg V. Dvornikov Valentine L. Dziatlau Nikolay N. Prokopenko Vladimir A. Tchekhovski Anna V. Bugakova Minsk Research Instrument-Making Institute (MNIPI) Minsk Belarus Don State Technical University Institute for Design Problems in Microelectronics of Russian Academy of Sciences (IPPM RAS) Zelenograd Russia Vladimir Alexeyevich Tchekhovski is from Institute for Nuclear Problems of Belarussian State University Minsk Belarus Don State Technical University Rostov-on-Don Russia

The article presents the comparison of the effects of the fast electrons with the energy of 6 MeV and 60 Co gamma rays on the volt-ampere characteristics (VACs) of SiGe n-p-n transistors of SGB25V technology (the major ones for design of the analog ICs): the dependence of the static base current gain in the common-emitter (CE) configuration (β) on the emitter current (Ie), the output VAC in the CE configuration, the dependence of the voltage across the forward-biased base-emitter junction (Ube) on Ie.

关键词： Integrated circuits Iron Transistors Silicon germanium Radiation effects Standards Gamma-rays

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Rad-Hard Versions of SPICE MOSFET Models for Effective Simulation of SOI/SOS CMOS Circuits Taking into Account Radiation Effects

Rad-Hard Versions of SPICE MOSFET Models for Effective Simul...

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European Conference on Radiation and its Effects on Components and Systems

作者： Konstantin O. Petrosyants Igor A. Kharitonov Lev M. Sambursky Alexander S. Mokeev Institute for Design Problems in Microelectronics Russian Academy of Sciences National Research University "Higher School of Economics" (Moscow Institute of Electronics and Mathematics)

ISBN: (纸本)9781509002337

SPICE modeling of SOI/SOS MOSFETs with account for static (total dose) and dynamic (heavy ions and transient ionizing radiation) radiation-induced effects including SPICE models, model parameter extraction and applications for circuit simulation, is described for radiation hard Silicon-on-Insulator/Silicon-on-Sapphire technologies.

关键词： Aerospace electronics Circuit analysis CMOSFET circuits Integrated circuit reliability Monolithic integrated circuits Parameter extraction Radiation hardening Semiconductor device modeling Semiconductor device reliability

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3D convolutional neural networks for stalled brain capillary detection

arXiv

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arXiv 2021年

作者： Solovyev, Roman Kalinin, Alexandr A. Gabruseva, Tatiana Institute for Design Problems in Microelectronics of Russian Academy of Sciences Moscow124365 Russia Shenzhen Research Institute of Big Data ShenzhenGuangdong518172 China Department of Computational Medicine and Bioinformatics University of Michigan Ann ArborMI48109 United States Cork University Hospital Cork Ireland

Adequate blood supply is critical for normal brain function. Brain vasculature dysfunctions such as stalled blood flow in cerebral capillaries are associated with cognitive decline and pathogenesis in Alzheimer's disease. Recent advances in imaging technology enabled generation of high-quality 3D images that can be used to visualize stalled blood vessels. However, localization of stalled vessels in 3D images is often required as the first step for downstream analysis, which can be tedious, time-consuming and error-prone, when done manually. Here, we describe a deep learning-based approach for automatic detection of stalled capillaries in brain images based on 3D convolutional neural networks. Our networks employed custom 3D data augmentations and were used weight transfer from pre-trained 2D models for initialization. We used an ensemble of several 3D models to produce the winning submission to the "Clog Loss: Advance Alzheimer's research with Stall Catchers" machine learning competition that challenged the participants with classifying blood vessels in 3D image stacks as stalled or flowing. In this setting, our approach outperformed other methods and demonstrated state-of-the-art results, achieving 85% Matthews correlation coefficient, 85% sensitivity, and 99.3% specificity. The source code for our solution is made publicly available. Copyright © 2021, The Authors. All rights reserved.

关键词： Computer vision

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Simulation and synthesis of networks-on-chip by using NoCSimp HDL library

Simulation and synthesis of networks-on-chip by using NoCSim...

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IEEE International Conference on Electronics and Nanotechnology (ELNANO)

作者： A. Yu. Romanov A. D. Ivannikov I. I. Romanova National Research University Higher School of Economics Moscow Russian Federation The Institute for Design Problems in Microelectronics of Russian Academy of Sciences Moscow Zelenograd Russian Federation Computer Systems and Networks dept. of State Higher Educational Institution Kyiv Electromechanical College Kyiv Ukraine

ISBN: (纸本)9781509014323

This paper proposes an approach to the synthesis and modeling of networks-on-chip (NoCs) by using the NoCSimp library based on a simplified wormhole router with central buffer and without virtual channels. The analysis of the results of simulation and synthesis of NoCs with regular and quasi-optimal topologies with number of nodes 8 and 9 is given. It is shown that in the case where the number of NoC nodes is not a power of 2 the use of quasi-optimal topologies offers a significant advantage.

关键词： Topology Network topology Libraries Computational modeling Hardware design languages Bandwidth Ports (Computers)

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Low-temperature BiJFet Op-Amp with high slew rate

Low-temperature BiJFet Op-Amp with high slew rate

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Telecommunications Forum (TELFOR)

作者： Nikolay N. Prokopenko Oleg V. Dvornikov Anna V. Bugakova Nikolay Nikolaevich Prokopenko is from Don State Technical University Institute for Design Problems in Microelectronics of Russian Academy of Sciences (IPPM RAS) Zelenograd Russia Oleg Vladimirovich Dvornikov is from Plc. “Minsk Research Instrument-Making Institute” (MNIPI) Minsk Belarus Don State Technical University Rostov-on-Don Russia

The article considers a method of increasing the maximum slew rate (SR) of BiJFets Op-Amp with one-pole frequency compensation, the input stage of which operates in the microcurrent mode (1÷10 μA). To increase the SR by 1-3 orders the authors introduce a correcting differential stage and an RC-correction differential circuit, which speeds up the recharging processes of the main correcting capacitor, into the original classical Op-Amp circuit. As active elements of the circuit, the bipolar and field effect transistors (BiJFets) of the 3KBT technological process (JSC “Integral”, Minsk), which provides high radiation hardness of the Op-Amp (neutron flux up to Fn13 n/cm 2 , accumulated dose of radiation up to Dg≤1 Mrad) and the possibility of Op-Amp operation at low temperatures, including cryogenic ones (up to -190°C).

关键词： Capacitors Transistors Capacitance Operational amplifiers Mirrors Computer simulation

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Modernization of Low-Temperature JFET Models Built into LTspice CAD Systems, Taking into Account the Results of their Experimental Study

Modernization of Low-Temperature JFET Models Built into LTsp...

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Latin American Electron Devices Conference (LAEDC)

作者： Oleg V. Dvornikov Valentine L. Dziatlau Vladimir A. Tchekhovski Nikolay N. Prokopenko Alexey A. Zhuk Anna V. Bugakova Plc. “Minsk Research Instrument-Making Institute” (MNIPI) Kolas's str. 73 Minsk Belarus Institute for Nuclear Problems of Belarussian State University Bobruiskaya str. 11 Minsk Belarus Institute for Design Problems in Microelectronics of Russian Academy of Sciences (IPPM RAS) Sovetskaya st. 3 Zelenograd Russia Don State Technical University Gagarin's sq. 1 Rostov-on-Don Don State Technical University Rostov-on-Don (RR) Russia

ISBN: (数字)9781728110448

ISBN: (纸本)9781728110455

The results of experimental studies of the current-voltage characteristics (CVC) of silicon n-JFET and p-JFET manufactured at JSC INTEGRAL (Minsk, Belarus) at temperatures from minus 195°C up to 30°C are considered. A hardware-software complex and a JFET automated measurement technique are created. Refined approximations of the temperature dependences of the Spice parameters of JFETs are given, which provide a good agreement between the results of measurements and simulation of the CVC. The created models are intended primarily for computer simulation of low-temperature effects in analog ICs in the LTspice CAD.

关键词： Temperature measurement JFETs Solid modeling Semiconductor device measurement Logic gates Integrated circuit modeling Temperature

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Applying Machine Learning Methods to Signal Integrity Analysis

Applying Machine Learning Methods to Signal Integrity Analys...

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Ivannikov ISPRAS Open Conference (ISPRAS)

作者： Alexey Zhigulin Mikhail Rogozhinskiy Roman Solovyev Dmitriy Telpukhov Nikolay Levchenko Alexander Stempkovskiy Leonid Pereverzev Dept. of automation of design of integrated circuits AlphaCHIP LLC Moscow Russia Dept. of design of integrated circuits AlphaCHIP LLC Moscow Russia Deputy General Director for Innovation Activities AlphaCHIP LLC Moscow Russia Deputy General Director for Research AlphaCHIP LLC Moscow Russia Department for Design Problems in Microelectronics NRC “Kurchatov institute” Moscow Russia General Director AlphaCHIP LLC Moscow Russia Deputy General Director AlphaCHIP LLC Moscow Russia

ISBN: (数字)9798331526023

ISBN: (纸本)9798331526030

Voltage spikes caused by signal switching in adjacent circuits can lead to false switching and failures in integrated circuits. To identify such risks, signal integrity (SI) analysis is performed by extracting parasitic RC networks, followed by SPICE simulation or application of analytical methods. However, this process is time-consuming. This research proposes using machine learning methods to rapidly and accurately predict the results of SI analysis without the need for computationally expensive modeling. It accelerates SI analysis a lot with low accuracy losses. Also, this paper introduces new reduction model for victim-aggressor pair that is more accurate than previously used.

关键词： Analytical models Accuracy Computational modeling Machine learning Predictive models SPICE Data models Integrated circuit modeling Signal integrity Switching circuits

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