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检索条件"机构=Research Institute of Design Problems in Microelectronics"

共 86 条记录，以下是71-80 订阅

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Simulation and synthesis of networks-on-chip by using NoCSimp HDL library

Simulation and synthesis of networks-on-chip by using NoCSim...

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IEEE International Conference on Electronics and Nanotechnology (ELNANO)

作者： A. Yu. Romanov A. D. Ivannikov I. I. Romanova National Research University Higher School of Economics Moscow Russian Federation The Institute for Design Problems in Microelectronics of Russian Academy of Sciences Moscow Zelenograd Russian Federation Computer Systems and Networks dept. of State Higher Educational Institution Kyiv Electromechanical College Kyiv Ukraine

ISBN: (纸本)9781509014323

This paper proposes an approach to the synthesis and modeling of networks-on-chip (NoCs) by using the NoCSimp library based on a simplified wormhole router with central buffer and without virtual channels. The analysis of the results of simulation and synthesis of NoCs with regular and quasi-optimal topologies with number of nodes 8 and 9 is given. It is shown that in the case where the number of NoC nodes is not a power of 2 the use of quasi-optimal topologies offers a significant advantage.

关键词： Topology Network topology Libraries Computational modeling Hardware design languages Bandwidth Ports (Computers)

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Non-destructive testing of electronic components overheating using infrared thermography 8

Non-destructive testing of electronic components overheating...

引用

8th International Workshop NDT in Progress 2015

作者： Petrosyants, Konstantin O. Kharitonov, Igor A. Department of Electronic Engineering National Research University Higher School of Economics Moscow Institute of Electronics and Mathematics Moscow Russia Institute for Design Problems in Microelectronics Russian Academy of Sciences Moscow Russia

ISBN: (纸本)9788021452626

Software-hardware IR thermography subsystem for non-destructive testing of electronic components overheating has been developed. IR measuring part included: Flir Thermovision A40 infrared camera with 17 mkm macro lens, Quantum Focus Instruments Corp InfraScope, precise positioning system. Software part for IR data processing included two standard tools: ThermaCAM researcher, NEC San-ei Image Processor and several original software tools for extension of the subsystem abilities. The sets of examples are presented to illustrate the efficiency of using IR thermography measuring subsystem for non-destructive testing of electronic components (semiconductor devices, chips, PCBs) to improve thermal stability and reliability of electronic products.

关键词： Nondestructive examination

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Bifurcations in the dynamical system for three-layered magnetic valve 6th

Bifurcations in the dynamical system for three-layered magne...

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6th Moscow International Symposium on Magnetism, MISM 2014

作者： Ostrovskaya, Natalia Skidanov, Vladimir Iusipova, Iuliia Institute for Design Problems in Microelectronics RAS Sovetskaya street 3 Zelenograd Moscow124365 Russia National Research University of Electronic Technology Solnechnaya Alleya 5 Zelenograd Moscow124498 Russia

ISBN: (纸本)9783038354826

Magnetization dynamics in a three-layered nanopillar Co/Cu/Co structure with one fixed and one free layer driven by external magnetic field and spin-polarized electric current was investigated using methods of the theory of bifurcations. Mathematical model is based on the Landau-Lifshits-Gilbert equation with the current term in the Sloncžewski–Berger form. Orientation of applied magnetic field was considered to be parallel to the anisotropy axis. Physical model included the magnetocrystalline anisotropy field and the demagnetizing field. Because of small size of the structure, the space dependence of magnetization, as usually, was not taken into account. The resulting system of equations has the form of the nonlinear dynamical system with the polynomial right sides. Mathematical simulation of magnetization dynamics for several typical values of field and current was performed. The numerical experiments revealed the features of switching process in more detail and permitted to find new regimes of magnetization dynamics, such as incomplete and accidental switching. © (2015) Trans Tech Publications, Switzerland.

关键词： Dynamical systems

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Methods of increasing the fault-tolerance of Control Unit by introducing hardware redundancy

Methods of increasing the fault-tolerance of Control Unit by...

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Internet Technologies and Applications (ITA)

作者： A. Soloviev A. Stempkovsky D. Kaleev The Institute for Design Problems in Microelectronics Moscow Russian Federation National Research University of Electronic Technology Moscow Russian Federation

The method of increasing the fault-tolerance of Control Unit is proposed. The main idea is to successively “contract” all values of output signals of Control Unit and to obtain final signature of convolution. It is proposed to implement the operation of division by the root polynomial (G(x) in binary Galois Field (GF)) as the convolution operation.

关键词： Yttrium Indium phosphide III-V semiconductor materials Polynomials

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Quasi – 3D Electrical and Thermal Modeling of Microelectronic Semiconductor Devices

Quasi – 3D Electrical and Thermal Modeling of Microelectron...

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2015 International Conference on Simulation, Modelling and Mathematical Statistics(SMMS 2015)

作者： Konstantin O.PETROSYANTS Nikita I.RYABOV National Research University Higher School of Economics Moscow Institute of Electronics and Mathematics Institute for Design Problems in Microelectronics Russian Academy of Sciences

New quasi – 3D numerical model for electrical and thermal analysis of microelectronic semiconductor devices is presented. The general 3D heat transfer and electrical field problems are correctly transformed to the set of 2D equations for temperature and electrical potential distributions in different layers of the device. The complexity and CPU time of the electro-thermal analysis are many times reduced. The results of different devices electro-thermal modeling for different types of semiconductor devices and ICs are presented.

关键词： Electrical field Thermal field Modeling Semiconductor devices Quasi – 3D approach

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Electro-thermal modeling of trench-isolated SiGe HBTs using TCAD

Electro-thermal modeling of trench-isolated SiGe HBTs using ...

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IEEE Symposium on Semiconductor Thermal Measurement and Management (SEMI-THERM)

作者： K. O. Petrosyants R. A. Torgovnikov National Research University Higher School of Economics Moscow Institute of Electronics and Mathematics Moscow Russia Russian Academy of Sciences Institute for Design Problems in Microelectronics

ISBN: (纸本)9781479985968

The modern SiGe HBT structure with shallow and deep trench isolation (STI and DTI) is analyzed from electrothermal standpoint using TCAD system. The electrical parameters β, f T , f max , maximal temperature T max , and thermal resistance R TH are under consideration. TCAD simulation confirms the fact that the presence of STI and DTI in SiGe HBT structures gains the self-heating effect in comparison with traditional Si BJT structures, where DTI is not used. It is shown that for high power regimes (I C = 0.5-3 mA; V CE = 4-5 V) the set of electrical parameters β, f T , f max significantly degrade, temperature T max can reach the critical values about 500 K, and the thermal resistance RTH increases thrice in HBT structure with STI and DTI. These results agree with published experimental data.

关键词： Silicon germanium Heterojunction bipolar transistors Diffusion tensor imaging Silicon Temperature distribution Heating Thermal resistance

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Methods of logical synthesis for library elements and blocks with regular layout structure

Methods of logical synthesis for library elements and blocks...

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IEEE International Conference on Electronics and Nanotechnology (ELNANO)

作者： Sergey Gavrilov Galina Ivanova Pavel Volobuev Aram Manukyan The Institute for Design Problems in Microelectronics Russian Academy of Science Moscow Zelenograd Russia National Research University of Electronic Technology (MIET) Moscow Zelenograd Russia

The paper is devoted to research and development of custom IP-blocks design methods in the form of standard elements with regular layout structure in the layers of polysilicon and diffusion. For today the leading developers of microelectronic devices continue to work out the key modules of microelectronic systems, such as core microprocessors, microcontrollers completely custom-made in a mode in which the final composition of library elements is not known beforehand, and the design is extremely low at the transistor level. However, automation of logic and layout synthesis process for a completely custom design is difficult due to significant increase in the complexity of the problem with increasing integration of microelectronic systems and decreasing the size of the standard elements to 22nm and below. The authors proposed FinFET layout design formation methods for layout synthesis of elements with a regular layout structure in layers of polysilicon and diffusion.

关键词： Layout Logic gates FinFETs Standards Integrated circuit modeling Libraries

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SOI/SOS MOSFET universal compact SPICE model with account for radiation effects

SOI/SOS MOSFET universal compact SPICE model with account fo...

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International Conference on Ultimate Integration of Silicon, ULIS

作者： Konstantin O. Petrosyants Igor A. Kharitonov Lev M. Sambursky National Research University Higher School of Economics Moscow Institute of Electronics and Mathematics Institute for Design Problems in Microelectronics Russian Academy of Sciences Moscow Russia Nacional'nyj issledovatel'skij universitet Vyssaa skola ekonomiki Moskva Moskovaskaa oblast' RU

Universal SPICE model for submicron SOI/SOS MOSFETs based on BSIMSOI and EKV-SOI platforms with account for total ionizing dose-induced effects (TID), pulsed radiation effects, single events is presented. A special subcircuit consisting of parasitic transistors for sidewall and backgate leakage currents and other elements is connected to the standard SPICE model. In addition, the radiation-dependent parameters are described by physically based mathematical equations. Model parameter extraction methodology is described. Examples of rad-hard SOI/SOS CMOS circuits simulation are presented.

关键词： Semiconductor device modeling Integrated circuit modeling MOSFET Mathematical model Radiation effects CMOS integrated circuits

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Rad-Hard Versions of SPICE MOSFET Models for Effective Simulation of SOI/SOS CMOS Circuits Taking into Account Radiation Effects

Rad-Hard Versions of SPICE MOSFET Models for Effective Simul...

引用

European Conference on Radiation and its Effects on Components and Systems

作者： Konstantin O. Petrosyants Igor A. Kharitonov Lev M. Sambursky Alexander S. Mokeev Institute for Design Problems in Microelectronics Russian Academy of Sciences National Research University "Higher School of Economics" (Moscow Institute of Electronics and Mathematics)

ISBN: (纸本)9781509002337

SPICE modeling of SOI/SOS MOSFETs with account for static (total dose) and dynamic (heavy ions and transient ionizing radiation) radiation-induced effects including SPICE models, model parameter extraction and applications for circuit simulation, is described for radiation hard Silicon-on-Insulator/Silicon-on-Sapphire technologies.

关键词： Aerospace electronics Circuit analysis CMOSFET circuits Integrated circuit reliability Monolithic integrated circuits Parameter extraction Radiation hardening Semiconductor device modeling Semiconductor device reliability

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IV-Characteristics Measurement Error Resulting from Long Cables for Irradiated Bipolar Junction Transistors

IV-Characteristics Measurement Error Resulting from Long Cab...

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2014 4th International Conference on Advanced Measurement and Test(AMT 2014)

作者： Konstantin O.Petrosyants Igor A.Kharitonov Lev M.Sambursky Maxim V.Kozhukhov Moscow Institute of Electronics and Mathematics National Research University“Higher School of Economics” Institute for Design Problems in Microelectronics Russian Academy of Sciences

I-V-characteristics of an irradiated transistor in many cases should be measured inside the radiation chamber with long cables,which introduces noticeable measurement *** this paper I-V-characteristics of an irradiated bipolar junction transistor measured with the 4-wire and the 2-wire circuits are presented and compared to direct(without cables) *** enlargement of measurement error for the 2-wire method in comparison with the 4-wire method is shown for different currents.

关键词： Bipolar junction transistor I-V-characteristics Irradiation 2-wire circuit 4-wire circuit Long cables Measurement error

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