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检索条件"机构=Research Institute of Design Problems in Microelectronics"
86 条 记 录,以下是81-90 订阅
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Hardware-software subsystem for MOSFETs characteristic measurement and parameter extraction with account for radiation effects
Hardware-software subsystem for MOSFETs characteristic measu...
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2013 3rd International Conference on Advanced Measurement and Test, AMT 2013
作者: Petrosyants, Konstantin O. Kharitonov, Igor A. Sambursky, Lev M. Moscow Institute of Electronics and Mathematics National Research University 'Higher School of Economics' Moscow Russia Institute for Design Problems in Microelectronics Russian Academy of Sciences Zelenograd Moscow Russia Science and Research Institute for Microelectronics and Instrumentation Moscow Russia
Hardware-software subsystem designed for MOSFETs characteristic measurement and SPICE model parameter extraction taking into account radiation effects is presented. Parts of the system are described. The macromodel ap... 详细信息
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Hardware-Software Subsystem for MOSFETs Characteristic Measurement and Parameter Extraction with Account for Radiation Effects
Hardware-Software Subsystem for MOSFETs Characteristic Measu...
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2013 3rd International Conference on Advanced Measurement and Test(AMT 2013)
作者: Konstantin O.Petrosyants Igor A.Kharitonov Lev M.Sambursk Moscow Institute of Electronics and Mathematics National Research University “Higher School of Economics” Institute for Design Problems in Microelectronics Russian Academy of Sciences
Hardware-software subsystem designed for MOSFETs characteristic measurement and SPICE model parameter extraction taking into account radiation effects is *** of the system are *** macromodel approach is used to accoun... 详细信息
来源: 评论
New version of automated electro-thermal analysis in Mentor Graphics PCB design System
New version of automated electro-thermal analysis in Mentor ...
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East-West design & Test Symposium (EWDTS)
作者: K.O. Petrosyants P.A. Kozynko I.A. Kharitonov A.V. Sidorov Y. N. Chichkanov Institute for Design Problems in Microelectronics of Russian Academy of Sciences (IPPM RAS) Mentor Graphics Training Center - MIEM Moscow Russia Electronics and Electrical Engineering Dept. Moscow State Institute of Electronics and Mathematics Research Institute of Automatics Moscow Russia
Automated electro-thermal analysis is realized in the last version of Mentor Graphics PCB design System. The special software tool AETA is developed and integrated into the Expedition Enterprise PCB design System to a... 详细信息
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TCAD-SPICE simulation of MOSFET switch delay time for different CMOS technologies
TCAD-SPICE simulation of MOSFET switch delay time for differ...
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2011 9th East-West design and Test Symposium, EWDTS'2011
作者: Petrosyants, K.O. Orekhov, E.V. Popov, D.A. Kharitonov, I.A. Sambursky, L.M. Yatmanov, A.P. Voevodin, A.V. Mansurov, A.N. Moscow State Institute of Electronics and Mathematics Technical University 3 B. Tryokhsvyatitelskiy side-street Moscow 109028 Russia Institute for Design Problems in Microelectronics Russian Academy of Sciences 3 Sovetskaya Street Moscow 124681 Russia Measuring Systems Research Institute Named after Yu. Ye. Sedakov GSP-486 N. Novgorod 603905 Russia
A comparison of delay time (td) for n- and p-MOSFETs switches with silicon on sapphire (SOS), silicon on insulator (SOI) and bulk silicon structures is presented. Two step TCAD-SPICE simulation procedure was used to d... 详细信息
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TCAD-SPICE simulation of MOSFET switch delay time for different CMOS technologies
TCAD-SPICE simulation of MOSFET switch delay time for differ...
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East-West design & Test Symposium (EWDTS)
作者: K. O. Petrosyants E. V. Orekhov D. A. Popov I. A. Kharitonov L. M. Sambursky A. P. Yatmanov A. V. Voevodin A. N. Mansurov Moscow State Institute of Electronics and Mathematics Technical University Moscow Russia Institute for Design Problems in Microelectronics Russian Academy of Science Moscow Russia Measuring Systems Research Institute Nizhny Novgorod Russia
A comparison of delay time (td) for n- and p-MOSFETs switches with silicon on sapphire (SOS), silicon on insulator (SOI) and bulk silicon structures is presented. Two step TCAD-SPICE simulation procedure was used to d... 详细信息
来源: 评论
Calculation of stress probability for NBTI-aware timing analysis
Calculation of stress probability for NBTI-aware timing anal...
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IEEE International Symposium on Quality Electronic design
作者: Alexander Stempkovsky Alexey Glebov Sergey Gavrilov Research Institute of Design Problems in Microelectronics IPPM RAS Moscow Russia
Negative bias temperature instability (NBTI) has become a primary mechanism that degrades performance of integrated circuits. It is well known that NBTI impacts pMOS transistors during circuit operation, and the degra... 详细信息
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