检索结果-内蒙古大学图书馆

International Conference on Wavelet Analysis and Pattern Recognition (ICWAPR)

作者： Inho Paek Changhan Park Myeongsuk Ki Kyoungju Park Joonki Paik Image Processing and Intelligent System Laboratory Department of Image Engineering Chung-Ang University Seoul South Korea Advanced Technology Research & Development Center Samsung Thales Company Limited Yongin si Gyeonggi South Korea Digital Broadcasting Research Division ETRI Electronics and Telecommunication Research Institute Daejeon South Korea Next Generation Imaging Contents Laboratory Department of Image Engineering Chung-Ang University Seoul South Korea

In this paper we present a moving object tracking method in a multiple camera tracking system using meta-data. The proposed method acquires image sequences from multiple fixed cameras without a priori camera calibration. The tracking is performed based on object's robust characteristics, such as motion, shape, color, and etc. Elements of meta-data and the optimal tracking method are selected at each frame. Because object's characteristics are affected by camera position and environmental condition, tracking method between individual cameras is selected by optimal metadata. Tracking in a single view can be divided into three classes, such as; optical flow-based moving object detector, active shape model (ASM), color correlation based detector. The proposed method matches objects to most similar object color information, by comparing meta-data and ASM. In the experiment, the proposed multi-camera tracking system is show to be robust for non-rigid objects.

关键词： Cameras Tracking Robot vision systems Surveillance Humans Biological system modeling Image analysis Robustness Object detection Active shape model

来源：评论

学校读者我要写书评

暂无评论

Superlubricity mechanism of diamond-like carbon with glycerol. Coupling of experimental and simulation studies

引用

Journal of Physics: Conference Series 2007年第1期89卷

作者： Bouchet, I. De Barros Matta, C. Le-Mogne, Th. Martin, J. Michel Zhang, Q. Goddard III, W. Kano, M. Mabuchi, Y. Ye, J. Laboratory of Tribology and System Dynamics Ecole Centrale de Lyon 69134 Ecully France Materials and Process Simulation Center California Institute of Technology Pasadena CA United States Nissan Research Center Kanagawa Industrial Technology Center Ebina Kanagawa 243-0435 705-1 1 Shimo-imaizumi Japan Materials Engineering Department Nissan Motor Co. Ltd. Tsurumi-ku Yokohama 6-1 Daikoku-cho Japan Research Department NISSAN ARC Ltd. Yokosuka 237-8523 1 Natsushima-cho Japan

We report a unique tribological system that produces superlubricity under boundary lubrication conditions with extremely little wear. This system is a thin coating of hydrogen-free amorphous Diamond-Like-Carbon (denoted as ta-C) at 353 K in a ta-C/ta-C friction pair lubricated with pure glycerol. To understand the mechanism of friction vanishing we performed ToF-SIMS experiments using deuterated glycerol and ¹³C glycerol. This was complemented by first-principles-based computer simulations using the ReaxFF reactive force field to create an atomistic model of ta-C. These simulations show that DLC with the experimental density of 3.24 g/cc leads to an atomistic structure consisting of a 3D percolating network of tetrahedral (sp³) carbons accounting for 71.5% of the total, in excellent agreement with the 70% deduced from our Auger spectroscopy and XANES experiments. The simulations show that the remaining carbons (with sp² and sp¹ character) attach in short chains of length 1 to 7. In sliding simulations including glycerol molecules, the surface atoms react readily to form a very smooth carbon surface containing OH-terminated groups. This agrees with our SIMS experiments. The simulations find that the OH atoms are mostly bound to surface sp¹ atoms leading to very flexible elastic response to sliding. Both simulations and experiments suggest that the origin of the superlubricity arises from the formation of this OH-terminated surface. © 2007 IOP Publishing Ltd.

关键词：

来源：评论

学校读者我要写书评

暂无评论

Remaining Service Life Diagnostic technology of Phenol Insulators for Power Distribution Equipment

Remaining Service Life Diagnostic Technology of Phenol Insul...

引用

2007 Annual Report Conference on Electrical Insulation and Dielectric Phenomena, vol.1

作者： S. Miki T. Hasegawa S. Umemura H. Okazawa Y. Otsuka H. Inujima Advanced Technology Research and Development Center Mitsubishi Electric Corporation Limited Amagasaki Hyogo Japan Power Distribution System Center Mitsubishi Electric Corporation Limited Marugame Kagawa Japan Graduate School of IPS Waseda University Fukuoka Japan

We have applied a remaining service life diagnostic technology to phenol insulators of power distribution equipment. Application of chemical evaluation and the Mahalanobis-Taguchi (MT) method enabled us to diagnose the insulators' degree of deterioration with great accuracy and nondestructively on-site. Time was defined as the end of service life when electrical discharge was initiated and a remaining service life was presumed from the diagnostic results by the MT method and the year in which the master curve of service life and the threshold value intersect. Surface resistivity (threshold value) for electrical discharge initiation can be calculated from creepage distance, permittivity, frequency, etc.. It was clarified that a remaining service life for phenol insulators could be presumed by this technology because there was a good relationship between the check examination results of electric discharge initiation in the laboratory and the presumption results.

关键词： Power distribution Conductivity Dielectrics and electrical insulation Calcium Humidity Accidents Power transformer insulation research and development Chemical technology Surface discharges

来源：评论

学校读者我要写书评

暂无评论

Design and characterization of a multi-rc-triggered MOSFET-based power clamp for on-chip ESD protection

Design and characterization of a multi-rc-triggered MOSFET-b...

引用

2006 Electrical Overstress/Electrostatic Discharge Symposium, EOS/ESD 2006

作者： Li, Junjun Gauthier, Robert Mitra, Souvick Putnam, Christopher Chatty, Kiran Halbach, Ralph Seguin, Christopher IBM Semiconductor Research and Development Center System and Technology Group Essex Junction VT 05452 United States

We present a novel multi-RC-triggered MOSFET-based power clamp with up to 70% trigger circuit area reduction and improved transient HBM, MM, and CDM ESD clamping performance. A three-stage RC-trigger circuit design gives a 300ns self-shutdown time during power-up for mistrigger leakage current control and an improved mistrigger immunity down to 1s power-up rise time. TLP and HBM hardware characterization data from a 90nm CMOS technology show >5A failure current and >3kV HBM robustness for a designed MOSFET width of 4000m. © 2006 ESDA.

关键词： Electrostatic devices

来源：评论

学校读者我要写书评

暂无评论

simulation study on channel length scaling of high performance partially depleted metal gate and poly gate SOI MOSFETs

Simulation study on channel length scaling of high performan...

引用

2006 International Conference on simulation of Semiconductor Process and Devices, SISPAD '06

作者： Xinlin, Wang Bryant, Andres Oldiges, Phil Narasimha, Shreesh Dennard, Robert Haensch, Wilfried IBM Semiconductor Research and Development Center Systems and Technology Group Hopewell Junction NY 12533 United States System and Technology Group Essex Junction VT 05452 United States Research Division IBM T.J. Watson Research Center

ISBN: (纸本)1424404045

In this work, two-dimensional numerical device simulations and 6-stage inverter chain delay calculations are done to examine whether aggressive channel length scaling continually provides transistor performance gain and whether metal gates (MG) offer potential for device scaling over poly gate (PG) for high performance (HP) applications. Our simulation show that for HP application (1) there is an optimized channel length, at which maximum performance gain is obtained both for MG and PG;(2) At short channel length regime (

关键词： MOSFET devices

来源：评论

学校读者我要写书评

暂无评论

Improvement of data retention time property by reducing vacancy-type defect in DRAM cell transistor

Improvement of data retention time property by reducing vaca...

引用

44th Annual IEEE International Reliability Physics Symposium

作者： Okonogi, Kensuke Ohyu, Kiyonori Umeda, Takahide Miyake, Hideharu Fujieda, Shinji Research and Development Gr. Technology and Development Office ELPIDA Memory Inc. Japan Research Center for Knowledge Communities Institute of Library and Information Science University of Tsukuba Japan System Devices Research Laboratories NEC Corporation Sagamihara Kanagawa 229-1198 3-1-35 Minamihashimoto Japan

ISBN: (纸本)0780394984

As electric equipment for portable spreads through a world widely, development of a low power consumption device is required strongly. DRAM development also has the same demand. Since DRAM needs a long refresh cycle in order to realize low power consumption, improvement of data retention time property is one of the important subjects. Among all the cell transistors in a DRAM chip, a few cells with short retention time, which are called minority bits, exist. Therefore, in order to get a long refresh cycle, it is indispensable to reduce the number of minority bits. The cause of minority bit generation has not been investigated in detail. In last year, however, we clarified one cause of the minority bit generation and proposed a new mechanism of data retention time degradation [1]. Our results showed that the triangular intrinsic stacking faults in depletion layer of minority bits enhance junction leakage current through a trap-assisted tunneling. Since the defect is the aggregate of silicon vacancy at the compressive lattice strain region, the defect growth is suppressed by controlling the lattice strain. But, minority bit did not disappeared completely by this stress control. This result suggests that the small vacancy-type defect, such as point defect, still exists. In the present paper, the cause of the leakage current of a real DRAM cell was analyzed using, EDMR (Electrically Detected Magnetic Resonance). The small point defect that remains in depletion region of a cell transistor was investigated. Furthermore, since one annealing process that enhances the occurrence of the point defect could be specified, the annealing condition dependence of the defect density was investigated. Consequently, for the first time, relationship between the number of minority bits and the density of point defect was clarified.

关键词： DRAM data retention time vacancy-type defect and junction leakage current

来源：评论

学校读者我要写书评

暂无评论

A Joint Blind Equalization and Modulation Identification Algorithm

A Joint Blind Equalization and Modulation Identification Alg...

引用

International Conference on Communications, Circuits and systems (ICCCAS)

作者： Bin Wang Lindong Ge Technology Research Center National Digital Switching System Engineering and Technological Research and Development Center Zhengzhou Henan China

This paper proposes a joint blind equalization and modulation identification algorithm for higher order QAM modulated signals in multi-path environments. Compared with the existing algorithms, the complexity of the proposed algorithm is reduced and the proposed algorithm is robust to carrier phase offset in the multi-path channels. simulation results demonstrate the feasibility at middle or high SNR (signal to noise ratio)

关键词： Blind equalizers Quadrature amplitude modulation Digital modulation Signal processing Constellation diagram Adaptive equalizers Signal to noise ratio Interference Mean square error methods Finite impulse response filter

来源：评论

学校读者我要写书评

暂无评论

Design and characterization of a multi-RC-triggered MOSFET-based power clamp for on-chip ESD protection

Design and characterization of a multi-RC-triggered MOSFET-b...

引用

Electrical Overstress/Electrostatic Discharge Symposium (EOS/ESD)

作者： Junjun Li Robert Gauthier Souvick Mitra Christopher Putnam Kiran Chatty Ralph Halbach Christopher Seguin Semiconductor Research and Development Center System and Technology Group IBM Essex Junction VT USA

We present a novel multi-RC-triggered MOSFET-based power clamp with up to 70% trigger circuit area reduction and improved transient HBM, MM, and CDM ESD clamping performance. A three-stage RC-trigger circuit design gives a 300 ns self-shutdown time during power-up for mistrigger leakage current control and an improved mistrigger immunity down to 1 mus power-up rise time. TLP and HBM hardware characterization data from a 90 nm CMOS technology show >5A failure current and >3 kV HBM robustness for a designed MOSFET width of 4000 mum.

关键词： Clamps Electrostatic discharge Protection CMOS technology Trigger circuits Circuit synthesis Leakage current Hardware Robustness MOSFET circuits

来源：评论

学校读者我要写书评

暂无评论

Evaluating customer requirements in Eco-VA 13

Evaluating customer requirements in Eco-VA

引用

13th CIRP International Conference on Life Cycle Engineering, LCE 2006

作者： Sakao, Tomohiko Oberender, Christof Krone, Nils Shimomura, Yoshiki Birkhofer, Herbert Reichl, Herbert Darmstadt University of Technology Institute for Product Development and Machine Elements Germany Fraunhofer Institute for Reliability and Microintegration IZM Dept of Environmental Engineering Germany Tokyo Metropolitan University Department of System Design Japan Technical University Berlin Research Center Microperipheric Technologies Germany

ISBN: (纸本)905682712X

Products must be environmentally friendly as well as conform with the market in order to go for a sustainable society. A tool named Eco-Value Analysis (Eco-VA) has been developed by modifying the traditional Value Analysis (VA). Eco-VA allows product developers to analyze functions of a product from economic costs, customers’ importance, and environmental impacts. However, Eco-VA has the following possible improvements due to the characteristics of VA. First, it is difficult to obtain correct and accurate requirements of end users. There is a way for end users to do it in more "user-oriented" way. Second, Eco-VA does not support product developers with finding the product concept to be investigated. In order to improve in this weakness, this paper presents a new method called "Extended Eco-VA". First, the modeling method of Service Engineering (SE) is adopted. A function to represent value is replaced with an Receiver’s State Parameter (RSP), by which designers represent the benefits or costs in SE. Second, Conjoint Analysis and AHP are applied to end users’ evaluation. Conjoint Analysis is carried out using design solution candidates represented with a limited small number of attributes and their levels. The presented method is verified through its application to a food processing machine. © 2006 Katholieke Universiteit Leuven. All rights reserved.

关键词： Value engineering

来源：评论

学校读者我要写书评

暂无评论

Capacity Planning Method for Semiconductor Fab with Time Constraints between Operations

Capacity Planning Method for Semiconductor Fab with Time Con...

引用

SICE Annual Conference

作者： Shoichi Kitamura Kazuyuki Mori Akira Ono Advanced Technology Research and Development Center Mitsubishi Electric Corporation Limited Hyogo Japan Manufacturing System Technology Department Renesas Technology Corporation Hyogo Japan

It is difficult to plan capacities of a semiconductor wafer fabrication with constraints of queue time which means a waiting time from the end of a step to the start of the next step for warranting production quality. If the queue time constraints could not be kept, the product is scrapped or reprocessed for qualitative recovery, and production efficiency remarkably decreases. This paper proposes an evaluation method which enables capacity planning of a fab with the queue time constraints, and shows its validity by simulation experiments. Furthermore we present an effectiveness of the method by applying to actual production lines

关键词： Capacity planning Time factors Fabrication Manufacturing Upper bound Production systems Queueing analysis Investments Tellurium research and development

来源：评论

学校读者我要写书评

暂无评论

建议与咨询留下您的常用邮箱和电话号码，以便我们向您反馈解决方案和替代方法

时间限定

文献类型

馆藏选择

核心期刊

语言

文献类型

帮助

文字说明：

检索规则说明：

检索范例：

分类表

所选分类

限定检索结果

文献类型

馆藏范围

日期分布

学科分类号

主题

机构

作者

语言

请选择保存的检索档案：

请选择收藏分类：

通借通还

建议与咨询 留下您的常用邮箱和电话号码，以便我们向您反馈解决方案和替代方法

时间限定

文献类型

馆藏选择

核心期刊

语言

文献类型

帮助

文字说明：

检索规则说明：

检索范例：

分类表

所选分类

限定检索结果

文献类型

馆藏范围

日期分布

学科分类号

主题

机构

作者

语言

请选择保存的检索档案： 新增检索档案 确定 取消

请选择收藏分类： 新增自定义分类 确定 取消

通借通还

建议与咨询留下您的常用邮箱和电话号码，以便我们向您反馈解决方案和替代方法

请选择保存的检索档案：

请选择收藏分类：