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Annual International Symposium on Reliability Physics

作者： Kensuke Okonogi Kiyonori Ohyu Takahide Umeda Hideharu Miyake Shinji Fujieda Research & Development Gr. Technology and Development Office Elpida Memory Inc. Japan Research Center for Knowledge Communities Institute of Library and Information Science University of Tsukuba Japan System Devices Research Laboratories NEC Corporation Limited Sagamihara Kanagawa Japan

As electric equipment for portable spreads through a world widely, development of a low power consumption device is required strongly. DRAM development also has the same demand. Since DRAM needs a long refresh cycle in order to realize low power consumption, improvement of data retention time property is one of the important subjects. Among all the cell transistors in a DRAM chip, a few cells with short retention time, which are called minority bits, exist. Therefore, in order to get a long refresh cycle, it is indispensable to reduce the number of minority bits. The cause of minority bit generation has not been investigated in detail. In last year, however, we clarified one cause of the minority bit generation and proposed a new mechanism of data retention time degradation (Okonogi et al., 2004). Our results showed that the triangular intrinsic stacking faults in depletion layer of minority bits enhance junction leakage current through a trap-assisted tunneling. Since the defect is the aggregate of silicon vacancy at the compressive lattice strain region, the defect growth is suppressed by controlling the lattice strain. But, minority bit did not disappeared completely by this stress control. This result suggests that the small vacancy-type defect, such as point defect, still exists. In the present paper, the cause of the leakage current of a real DRAM cell was analyzed using EDMR (electrically detected magnetic resonance). The small point defect that remains in depletion region of a cell transistor was investigated. Furthermore, since one annealing process that enhances the occurrence of the point defect could be specified, the annealing condition dependence of the defect density was investigated. Consequently, for the first time, relationship between the number of minority bits and the density of point defect was clarified

关键词： Random access memory Energy consumption Leakage current Lattices Annealing Degradation Stacking Tunneling Aggregates Silicon

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Comprehensive Study on Injection Velocity Enhancement in Dopant-Segregated Schottky MOSFETs

Comprehensive Study on Injection Velocity Enhancement in Dop...

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International Electron Devices Meeting (IEDM)

作者： A. Kinoshita T. Kinoshita Y. Nishi K. Uchida S. Toriyama R. Hasumi J. Koga Advanced LSI Technology Laboratory Corporate Research and Development Center Toshiba Corporation Yokohama Japan System LSI Division I Toshiba Corporation Semiconductor Company Yokohama Japan

The carrier transport in dopant-segregated Schottky (DSS) and conventional MOSFETs was thoroughly investigated in terms of carrier injection velocity, v inj . It was found that v inj enhancement associated with the velocity overshoot enhances the current drivability in DSS, in addition to the reduction of parasitic resistance. A physical-based model was newly developed to explain the velocity overshoot behavior and reproduced the experimental data very well. Moreover, a novel type of DSS FinFET to take full advantage of the velocity overshoot was proposed and demonstrated as a primary study

关键词： MOSFETs Decision support systems Large scale integration Laboratories research and development Semiconductor process modeling FinFETs Charge carrier density Hot carrier injection Capacitive sensors

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Novel Enhanced Stressor with Graded Embedded SiGe Source/Drain for High Performance CMOS Devices

Novel Enhanced Stressor with Graded Embedded SiGe Source/Dra...

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International Electron Devices Meeting (IEDM)

作者： M. Ieong J. Sudijono J.H. Ku D. Shum M. Hierlemann R. Amos G. Chiulli R. Lindsay S.D. Kim R. Loesing L. Burns A. Turansky A. Madan B. St Lawrence R. Davis R. Murphy J. Li J.J. Kim H. Zhuang S. Mishra D. Schepis A. Gutmann J. Kempisty T.N. Adam J. Holt H. Ng S. Fang Y.F. Chong R. Stierstorfer R. Krishnasamy Z. Luo N. Rovedo L.W. Teo H. Utomo J.P. Han IBM System and Technology Group Infineon Technologies Germany Chartered Semiconductor Manufacturing Ltd IBM System and Technology Group USA Samsung Electronics Company Alliances IBM Semiconductor Research and Development Center Hopewell Junction NY USA Samsung Electronics Co. Alliances at IBM Semiconductor Research and Development Center (SRDC) Hopewell Junction NY Samsung Electronics Co. Alliances at IBM Semiconductor Research and Development Center (SRDC) Hopewell Junction NY USA IBM Systems and Technology Group USA Infineon Technologies Infineon Technol. Munich

We present an advanced CMOS integration scheme based on embedded SiGe (eSiGe) with a novel graded germanium process. The retention of channel strain enabled a pFET performance gain of 15% over a non-graded eSiGe control. When combined with a compressive stress liner (CSL), the pFET drive current reached 770muA/mum at I off = 100nA/mum with V DD = 1V. Competitive nFET performance was maintained. Parasitics such as silicide and junction characteristics were not degraded

关键词： Silicon germanium Germanium silicon alloys Stress Capacitive sensors CMOS technology Silicides Semiconductor films CMOS process Performance gain Strain control

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technology and devices for 4th generation mobile communication terminals using software defined radio

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Journal of the National Institute of Information and Communications technology 2006年第4期53卷 41-49页

作者： Sunaga, Terumi Terashima, Yoshiaki Kiyohara, Ryozo Suematsu, Noriharu Itakura, Tetsuro Hirose, Yoshio Wireless Communication Technology Dept. Information Technology R and D Center Mitsubishi Electric Corporation Ubiquitous Network Systems Dept. Information Technology R and D Center Mitsubishi Electric Corporation Mobile Communication Laooratory Corporate Research and Development Center Toshiba Corporation Network Security Technology Dept. Information Technology R and D Center Mitsubishi Electric Corporation Electro-Optics and Microwave Electronics Technology Dept. Information Technology R and D Center Mitsubishi Electric Corporation System LSI Development Laboratories Fujitsu Laboratories Ltd.

In the future mobile communication, it is expected that various wireless communication systems will coexist. Therefore mobile terminal must have multi-band/multi-mode *** defined radio (SDR) is one of the technique ac... 详细信息

关键词： Mobile telecommunication systems

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development of a video-rate rangefinder system using light intensity modulation with scanning laser light

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systems and Computers in Japan 2006年第3期37卷 20-31页

作者： Azuma, Takeo Uomori, Kenya Nobori, Kunio Morimura, Atsushi Advanced Technology Research Laboratories Matsushita Electric Industrial Co. Ltd. Kyoto 619-0237 Japan Corporate Engineering Division Panasonic System Solutions Company Matsushita Electric Industrial Co. Ltd. Yokohama 223-8639 Japan Intelligent Processing Technology Research Laboratory Development Center Corporate Engineering Division Panasonic System Solutions Company

We have developed an active rangefinder system that can obtain depth images at video field rates by improving Carrihill's intensity ratio depth sensor. Although the depth sensor can be made at low cost, its depth precision is affected by background light, video noise, and the motion of objects. To reduce such influences, first we used a laser line pattern scanned by a rotating mirror as a light source and a camera with an optical narrow-bandpass filter - an interference filter - to overcome the background light. Second, we corrected the projected light power at the camera's peripheral field to decrease depth error there. Third, we performed inter-field median filtering of measured depths to decrease the influence of object motion. As a result, we achieved standard deviations of depths 1.4% and 2.1 % in a range of 2.2 to 3 and 3.2 to 4 m, respectively. © 2006 Wiley Periodicals, Inc.

关键词： Range finders

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High-sensitivity, high-speed dark-field wafer-defect inspection system - IS3000

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Hitachi Review 2006年第2期55卷 73-77页

作者： Abe, Shigeru Sekiguchi, Takuaki Nakano, Hiroyuki Noguchi, Minori Optical Inspection Systems Design Department Naka Division Hitachi High-Technologies Corporation Image Recognition and Inspection System Department Production Engineering Research Laboratory Inspection Equipment Technology Center Research and Development Division Hitachi High-Technologies Corporation Japan Society for Precision Engineering

OVER VIEW: The scaling down of cutting-edge semiconductor devices is just getting faster and faster. As regards the inspection technology accompanying this trend, on the semiconductor development line, all kinds of inspection devices are used, and the DOI causing a fault is detected. Drawing up specific countermeasures to control this DOI thus becomes the main target. At the same time, on the production line, high-speed monitoring - for inspection at high frequency without missing DOIs of production wafers - is becoming mainstream. To meet the above needs as semiconductor processes go beyond the 45-nm node, Hitachi has developed the IS3000 inspection system for patterned-wafers - which can perform such-monitoring of defects and foreign bodies at high-speed and high-sensitivity-and implemented this system on the production line. The IS3000 can detect foreign bodies, scratches, pattern shorts, and chipping on patterned wafers at a sensitivity of 50 nm and at high speed, namely, 35-300-mm wafers per hour. In other words, it successfully combines high throughput with high sensitivity. Furthermore, it features user-friendly operability regarding recipe creation, etc., an easy dark-field classification function for automatically classifying the detected defects, an interface with SEM observation, and improved analysis capability.

关键词： Semiconductor device manufacture

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Filling a narrow and high aspect-ratio trench with electro-cu plating

Filling a narrow and high aspect-ratio trench with electro-c...

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作者： Chonan, Yasunori Komiyama, Takao Onuki, Jin Nagano, Takahiro Akahoshi, Haruo Itabashi, Takeyuki Saito, Tatuyuki Khoo, Khyoupin Department of Electronics and Information Systems Factory of System Science and Technology Akita Prefectual University Yurihonjyo 015-0055 Japan Department of Materials Science and Engineering Ibaraki University Hitachi 316-8511 Japan Intellexres Laboratory Hitachi 316-0015 Japan Hitachi Research Laboratory Hitachi 319-1292 Japan Advanced Research Laboratory Hitachi Ltd. Hatoyama 350-0395 Japan Hitachi Ltd. Hitachi Device Development Center 198-8512 Japan

Copper electroplating has been used for making interconnections in large-scale integration (LSI). Sub-100-nm-wide, deep trenches with aspect-ratios over 6 were fully filled by optimizing DC and pulse electroplating processes. Grain sizes of Cu of sub-100-nm wide trenches after electroplating were 70 nm for DC electroplating and 58 nm for pulse electroplating. The Cu grain sizes of Cu interconnects by DC plating after electroplating increased with the annealing temperature. © 2006 The Japan Institute of Metals.

关键词： Copper

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Evolution of Intermetallic Compounds in PBGA Sn-Ag-Cu Solder Joints during Thermal Cycling Testing

Evolution of Intermetallic Compounds in PBGA Sn-Ag-Cu Solder...

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International Conference on (ICEPT) Electronic Packaging technology

作者： Peng Sun Cristina Andersson Johan Liu Dag R.Andersson Per-Erik Tegehall Dongkai Shangguan Department of Microtechnology and Nanoscience SMIT Center Chalmers University of Technology Goteborg Sweden Key State for New Displays and System Integration Chinese Ministry of Education SMIT Center Shanghai University Shanghai China IVF Industrial Research and Development Corporation 413-53 Mölndal Sweden IVF Industrial Research and Development Corporation Molndal Sweden Flextronics International San Jose USA

The present work was mainly focused on the evolution of interfacial intermetallic compounds (IMCs) between solder and Au/Ni/Cu metallization in PBGA Sn-Ag-Cu solder balls during thermal cycling test. The PBGA package was assembled on the FR-4 board using a typical surface mounting assembly process, and the thermal cycling was carried out in a systematic manner for two different temperature cycling profiles in a single chamber Heraeus climate cabinet. The first temperature profile ranged between 0degC and 100degC and the second between -55degC and 100degC. It was found that the type of IMCs existing in the solder matrix and on the PCB metallization was not affected by the thermal cycling. The growth rate of the interfacial IMC (Cu,Ni)6Sn5 was very low, and the thickness of the Sn-Ni-Cu ternary IMCs layer on the PCB metallization did not show a significant change during thermal cycling testing. For the temperature profile ranging between 0degC and 100degC and up to 6000 cycles, no fatigue cracks were found in the PBGA solder balls, while fatigue cracks could be observed after 3000 cycles, both at the solder/package side and solder/PCB side for the temperature profile ranging between -55degC and 100degC. The common failure mode of the solder joints analyzed in this work were cracks originating at the solder joint corners, firstly at the component solder mask defined (SMD) pad side and propagating within the solder along the PBGA metallization interface; no fatigue cracks were found to propagate through the interfacial intermetallic layer for all the cases (both on the package and PCB side). The cracks were found to propagate near and almost parallel to the interface of the bulk solder and the intermetallic layer. The ternary (Cu,Ni)6Sn5 IMCs layer attached very well to the substrate and no spalling could be observed

关键词： Intermetallic Soldering Testing Metallization Packaging Temperature distribution Fatigue Assembly systems Gold Transmission line matrix methods

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Advanced wireless packet cellular system using multi user OFDM-SDMA/inter-BTS cooperation with 1.3 Gbit/s downlink capacity

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Journal of the National Institute of Information and Communications technology 2006年第4期53卷 23-30页

作者： Kawazawa, Toshio Inoue, Takashi Fujishima, Kenzaburo Taira, Masanori Yoshida, Makoto Akasegawa, Akihiko Wireless Broadband System Development Section Technology Strategy Department KDDI Corporation Network Sysmtems Research Dept. Central Research Laboratory Hitachi Ltd. NGW Project Fujitsu Laboratories Ltd. YRP Research Center Radio Access Laboratory KDDI R and D Laboratories Inc. CDMA Development Dept. Hitachi Communication Technologies Ltd. Device and Materials Laboratories Fujitsu Laboratories Ltd.

To realize the 4th generation mobile communications system, we have been developing elements of advanced wireless signal processing technologies for space, time and frequency domain, that are MU-OFDM (Multi User Orthogonal Frequency Division Multiplexing) technology, Cryogenic RF front-end technology, SDMA (Space Division Multiple Access) and space-time inter BTS (Base Transmission Station) scheduling using multi beamforming technology. This report proposes MU-OFDM-SDMA/Inter BTS cooperation packet cellular system with integration of the technology elements. We also report that the downlink transmission performance and spectral efficiency by simulation using the elements technology results achieved 1.3 [Gbit/s] and 18 [bit/s/Hz/cell], respectively.

关键词： Mobile telecommunication systems

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Acoustic Survey Of Irrawaddy Dolphin Populations In Chilika Lagoon: First Test Of A Compact High-Resolution Device

Acoustic Survey Of Irrawaddy Dolphin Populations In Chilika ...

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OCEANS - Europe

作者： R. Bahl T. Ura H. Sugimatsu T. Inoue T. Sakamaki J. Kojima T. Akamatsu H. Takahashi S. K. Behera A. K. Pattnaik Muntaz Khan S. K. Kar Center for Applied Research in Electronics Indian Institute of Technology Delhi New Delhi India Underwater Technology Research Center Institute of Industrial Science University of Tokyo Meguro Tokyo Japan KDD Research and Development Laboratories Inc. Kamifukuoka Saitama Japan Fisheries Research Agency National Research Institute of Fisheries Engineering Kamisu Ibaraki Japan System Giken Company Limited Chigasaki Kanagawa Japan Freshwater and Wetlands Programme WWF-India New Delhi India Chilika Development Authority Bhubaneswar Orissa India Office of the Principal CCF(Wildlife) and Chief Wildlife Warden Bhubaneswar India

Irrawaddy dolphins (Orcaella brevirostris) being on top of the food chain are considered as a flagship species of Chilika. These cetaceans produce characteristic echolocation pulses that make them acoustically visible, night or day. Acoustic-based survey methods are found to be indispensable for surveying porpoises and dolphins in coastal precincts. This paper reports the first such collaborative attempt in Chilika by applying acoustic survey technology based on the design of an innovative compact and portable acoustic survey device designed for observation of groups of small cetaceans. The acoustic sensor system is housed in a "bird-cage" structure containing 3 hydrophones forming a main linear array, together with two more hydrophones forming a small 3-element triangle array with the central hydrophone, in a plane perpendicular to the linear array axis. It weighs 25 kg and is 3.6 m long, 30 cm in diameter, and can be deployed either vertically or horizontally with buoys and a weight. A high-speed multichannel data acquisition system records the dolphin click sounds from all hydrophones. Signal processing algorithms have been developed for automatic detection and discrimination of echolocation clicks from other underwater sounds, localization of sound sources, and tracking individual animals. The device has previously been tested in vertical mode in a quasi-natural environment with a group of bottlenose dolphins that has confirmed its capability to precisely track several vocalizing animals. The depth of the Chilika lagoon in the dolphin habitat can be as shallow as 1.5 m. Thus, the array has to be deployed in horizontal mode, which enables it to provide very good lateral resolution in the broadside direction. This paper reports the first results of using this array in shallow water conditions. Movements of several Irrawaddy dolphins have been observed very clearly.

关键词： Acoustic devices Dolphins Acoustic testing Sensor arrays Sonar equipment Acoustic arrays Underwater tracking Animals Acoustic pulses Sea measurements

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