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检索条件"机构=Research and Development Center of System Simulation Technology"
1291 条 记 录,以下是1131-1140 订阅
排序:
Robust adaptive fuzzy control for a class of uncertain servomechanism systems
Robust adaptive fuzzy control for a class of uncertain servo...
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IEEE Region 10 International Conference TENCON
作者: U. Komin S. Phoojaruenchanachai S. Chatratana S. Kuntanapreeda National Electronics and Computer Technology Center Thailand Research and Development Center for Intelligent System King Mongkut''s Institute of Technology North Bangkok Thailand
In this paper an adaptive fuzzy control technique is presented for a class of uncertain mechanical systems. The uncertainties are mainly caused by mechanical friction and unbalanced load. The fuzzy logic system is emp... 详细信息
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A practical stereo scheme for obstacle detection in automotive use
A practical stereo scheme for obstacle detection in automoti...
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International Conference on Pattern Recognition
作者: H. Nakai N. Takeda H. Hattori Y. Okamoto K. Onoguchi Multimedia Laboratory Corporate Research & Development Center Toshiba Corporation Japan Broadband System LSI Development Center Semiconductor Company Toshiba Corporation Japan Department of Electrical and Information System Engineering Faculty of Science and Technology Hirosaki University Japan
We propose a novel stereo scheme for obstacle detection which is aimed at practical automotive use. The basic methodology involves simple region matching between images, observed from a stereo camera rig, where it is ... 详细信息
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A simulation-based control system - A case study for distillation columns
A simulation-based control system - A case study for distill...
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2004 IEEE International Conference on Control Applications
作者: Yumoto, Takamasa Ohmori, Hiromitsu Ohtani, Tetsuya Engineering and Development Div. Omega Simulation Co. Ltd. 2-20-9 Nishi-Waseda Shinjyuku-ku Tokyo Japan Faculty of Science and Technology Dept. of System Design Engineering Keio University 3-14-1 Hiyoshi Kohoku-ku Yokohama Kanagawa Japan Instrum. and Control Research Center Yokogawa Electric Corporation 2-9-32 Nakacho Musashino-shi Tokyo Japan
In this paper we provide a novel simulation-based control system for the purpose of minimizing an objective function, followed by similar research areas such as dynamic optimization and model predictive control. Our t... 详细信息
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Summary of the 2004 CFD validation workshop on Synthetic Jets And Turbulent Separation Control
Summary of the 2004 CFD validation workshop on Synthetic Jet...
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2nd AIAA Flow Control Conference 2004
作者: Rumsey, C.L. Gatski, T.B. Sellers, W.L. Vatsa, V.N. Viken, S.A. NASA Langley Research Center Hampton VA 23681-2199 United States Computational Modeling and Simulation Branch Mail Stop 128 United States Flow Physics and Control Branch Mail Stop 170 United States Systems Technology Development ASPO Small Aircraft Transportation Systems Mail Stop 916 United States
A CFD validation workshop for synthetic jets and turbulent separation control (CFDVAL2004) was held in Williamsburg, Virginia in March 2004. Three cases were investigated: synthetic jet into quiescent air, synthetic j... 详细信息
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Ultra wide bandwidth performance of high-density wiring interposer for 3D packaging
Ultra wide bandwidth performance of high-density wiring inte...
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Electronic Components and technology Conference (ECTC)
作者: K. Kikuchi S. Segawa Eun-Sil Jung Y. Nemoto M. Umemoto H. Nakagawa K. Tokoro M. Aoyagi National Institute for Advanced Industrial Science and Technology Tsukuba Ibaraki Japan PI Research and Development Company Limited Yokohama Kanagawa Japan Tsukuba Research Center Electronic System Integration Technology Research Development Association of Super-Advanced Electronics Technologies (ASET) Tsukuba Center Inc. Tsukuba Ibaraki Japan
We have demonstrated a high-density wiring interposer for 10 GHz 3D packaging using a photosensitive multiblock copolymerized polyimide. This new polyimide can realize micron-sized fine patterns without the pattern sh... 详细信息
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An adaptive security/performance encryption system
An adaptive security/performance encryption system
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International Conference on Electrical, Electronic and Computer Engineering (ICEEC)
作者: M.E. El-Hennawy Y.H. Dakroury M.M. Kouta M.M. El-Gendy Computer and System Engineering Department Ain Shams University Cairo Egypt Arab Academy for Science Technology and Maritime Transport Cairo Egypt Research Development Center Cairo Egypt
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Challenge of low-k materials for 130, 90, 65 nm node interconnect technology and beyond
Challenge of low-k materials for 130, 90, 65 nm node interco...
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International Electron Devices Meeting (IEDM)
作者: H. Miyajima K. Watanabe K. Fujita S. Ito K. Tabuchi T. Shimayama K. Akiyama T. Hachiya K. Higashi N. Nakamura A. Kajita N. Matsunaga Y. Enomoto R. Kanamura M. Inohara K. Honda H. Kamijo R. Nakata H. Yano N. Hayasaka T. Hasegawa S. Kadomura H. Shibata T. Yoda Process and Manufacturing Engineering Center Semiconductor Company Toshiba Corporation Japan Semiconductor Technology Development Division Semiconductor Solutions Network Company Sony Corporation Yokohama Japan SoC Research and Development Center Semiconductor Company Toshiba Corporation Japan SoC Research and Development Center Semiconductor Company Toshiba Corporation System LSI Division I Semiconductor Company Japan System LSI Division I Semiconductor Company Toshiba Corporation System LSI Division I Semiconductor Company Toshiba Corporation Japan
In order to realize highly reliable low-k/Cu interconnects, optimum BEOL structures were developed for 130, 90 and 65 node logic devices respectively. For 65 nm node BEOL structure, the conventional monolithic dual da... 详细信息
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Impact of parasitic resistance and silicon layer thickness scaling for strained-silicon MOSFETs on relaxed Si/sub 1-x/Ge/sub x/ virtual substrate
Impact of parasitic resistance and silicon layer thickness s...
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International Electron Devices Meeting (IEDM)
作者: H. Kawasaki K. Ohuchi A. Oishi O. Fujii H. Tsujii T. Ishida K. Kasai Y. Okayama K. Kojima K. Adachi N. Aoki T. Kanemura D. Hagishima M. Fujiwara S. Inaba K. Ishimaru N. Nagashima H. Ishiuchi Toshiba Corporation Semiconductor Company Yokohama Japan System LSI Division I SoC Research and Development Center Yokohama Japan Advanced LSI Technology Laboratory Toshiba Corporation Yokohama Japan Semiconductor Technology Development Group Sony Corporation Yokohama Japan
This paper discusses the root causes of the fact that only slight performance improvement of MOSFET with strained-Si substrate has been achieved in short channel region (L < 100 nm). The performance improvement in ... 详细信息
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Bidding market based on single price model with network constraints
Bidding market based on single price model with network cons...
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IEEE PES Power systems Conference and Exposition, PSCE
作者: S. Fukutome T. Wachi L. Chen Y. Makino G. Koshimizu System Engineering Department JP Business Service Corporation Koto Tokyo Japan Department of Electrical Engineering and Electronics Osaka Sangyo University Daito Osaka Japan IT & Power System Engineering Laboratory Technology Development Center Electric Power Development Co. Limited Chigasaki Research Institute Chigasaki Kanagawa Japan
This paper aims to develop a single price auction model with AC transmission network for Electricity Market in Japan, based on the principle of maximizing social surplus. Specifically, we first formulate the auction m... 详细信息
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Integration of interconnect process highly manufacturable for 65nm CMOS platform technology (CMOS5)
Integration of interconnect process highly manufacturable fo...
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Symposium on VLSI technology
作者: K. Honda M. Kanda R. Ishizuka Y. Moriuchi Y. Matsubara M. Habu T. Yoshida S. Matsuda H. Kittaka H. Miyajima T. Hachiya A. Kajita T. Usui N. Nagashima R. Kanamura Y. Okamoto S. Yamada T. Noguchi System LSI Division Semiconductor Company Toshiba Corporation Japan Process & Manufacturing Engineering Center Semiconductor Company Toshiba Corporation Japan SoC Research & Development Center Semiconductor Company Toshiba Corporation Japan Semiconductor Technology Development Division Semiconductor Solutions Network Company Sony Corporation Yokohama Japan
PAE/SiOC/SiC hybrid dual damascene process with low-k (k=2.5) dielectric layer for 65nm-node was successfully integrated. The EB curing technique of the low-k dielectric was selected to maintain enough adhesion streng... 详细信息
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