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development of infrared and millimeter wave scene generators for the P3I BAT high fidelity flight simulation

International Conference on Computational Science, ICCS 2001

作者： Farris, Jeremy R. Drake, Marsha System Simulation and Development Directorate U.S. Army Aviation and Missile Research and Development Center U.S. Army Aviation and Missile Command Redstone ArsenalAL35898 United States Simulation Technologies Inc 3307 Bob Wallace Avenue HuntsvilleAL35805 United States

ISBN: (纸本)3540422331

The Pre-planned Product Improvement (P3I) Brilliant Anti-Armor BAT submunition High Fidelity Flight simulation (HFS) is an all-digital, nonreal- time simulation that combines the P3I BAT Six-Degrees-of-Freedom (6- DOF), a high fidelity dual mode seeker model, tactical flight software, and infrared (IR)/millimeter-wave (MMW) scene generation to produce a tool capable of system design, algorithm development and performance assessment. The HFS development methodology emphasizes the use of high fidelity IR and MMW imagery so that the seeker algorithms/tactical software can be incorporated to form a Software-In-The-Loop (SWIL) simulation. The IR and MMW scene generators use validated IR and MMW target signatures with correlated IR and MMW backgrounds to produce a realistic scene for a variety of battlefield scenarios. Both the IR and MMW scene generators have evolved with the availability high performance computational capability and system development to meet the design and performance assessment requirements of the P3I BAT program. © Springer-Verlag Berlin Heidelberg 2001.

关键词： Millimeter waves

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Understanding of hard and soft breakdown phenomena in thin gate oxides through carrier transport properties after breakdown

Understanding of hard and soft breakdown phenomena in thin g...

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International Workshop on Gate Insulator, IWGI 2001

作者： Takagi, S. Takayanagi, A. Advanced LSI Technology Laboratory Research and Development Center Toshiba Corp. Saiwai-ku Kawasaki212-8582 Japan System LSI Research and Development Center Semiconductor Company Toshiba Corp. 1 Komukai Toshiba-cho Saiwai-ku Kawasaki212-8582 Japan

ISBN: (纸本)4891140216

The carrier separation technique is applied to gate oxides after the occurrence of soft and hard breakdown. The dominant carrier type in leakage current flow through gate oxides after breakdown is identified for MOSFETs with different channel types and doping types of the poly Si gate electrode. The systematic approach through this combination of carrier separation measurement and MOSFETs with various doping types is shown to be quite effective in studying the conduction mechanism and the physical picture of breakdown spots. © 2001 Japan Soc of Applied Physics.

关键词： MOSFET devices

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Adjustment of wind waves to sudden changes of wind speed

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Journal of Oceanography 2001年第5期57卷 519-533页

作者： Waseda, Takuji Toba, Yoshiaki Tulin, Marshall P. Frontier Research System for Global Change and International Pacific Research Center University of Hawaii HI 96822 United States Earth Observation Research Center National Space Development Agency of Japan Tokyo 104-6023 Japan Japan Marine Science and Technology Center Yokosuka 237-0061 Japan Ocean Engineering Laboratory University of California Santa Barbara CA 93106 United States

An experiment was conducted in a small wind-wave facility at the Ocean Engineering Laboratory, California, to address the following question: when the wind speed changes rapidly, how quickly and in what manner do the short wind waves respond? To answer this question we have produced a very rapid change in wind speed between U_low (4.6 m s^-1) and U _high (7.1 m s^-1). Water surface elevation and air turbulence were monitored up to a fetch of 5.5 m. The cycle of increasing and decreasing wind speed was repeated 20 times to assure statistical accuracy in the measurement by taking an ensemble mean. In this way, we were able to study in detail the processes by which the young laboratory wind waves adjust to wind speed perturbations. We found that the wind-wave response occurs over two time scales determined by local equilibrium adjustment and fetch adjustment, Δt₁/T = O(10) and Δt₂/T = O(100), respectively, in the current tank. The steady state is characterized by a constant non-dimensional wave height (H/gT² or equivalently, the wave steepness for linear gravity waves) depending on wind speed. This equilibrium state was found in our non-steady experiments to apply at all fetches, even during the long transition to steady state, but only after a short initial relaxation Δt₁/T of O(10) following a sudden change in wind speed. The complete transition to the new steady state takes much longer, Δt₂/T of O(100) at the largest fetch, during which time energy propagates over the entire fetch along the rays (dx/dt = c_g) and grows under the influence of wind pumping. At the same time, frequency downshifts. Although the current study is limited in scale variations, we believe that the suggestion that the two adjustment time scales are related to local equilibrium adjustment and fetch adjustment is also applicable to the ocean.

关键词： Fetch Local equilibrium Wind gust Wind waves

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Understanding of hard and soft breakdown phenomena in thin gate oxides through carrier transport properties after breakdown

Understanding of hard and soft breakdown phenomena in thin g...

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International Workshop on Gate Insulator (IWGI)

作者： S. Takagi A. Takayanagi Advanced LSI Technology Laboratory Research & Development Center Toshiba Corporation Kawasaki Japan System LSI Research & Development Center Semiconductor Company Toshiba Corporation Kawasaki Japan

关键词： Electric breakdown Charge carrier processes MOSFETs Current measurement Impact ionization Tunneling Substrate hot electron injection Leakage current Doping Electrodes

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Non-uniform azimuth image shift caused by the pitching motion of ships observed in Radarsat images

Non-uniform azimuth image shift caused by the pitching motio...

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IEEE International Symposium on Geoscience and Remote Sensing (IGARSS)

作者： K. Ouchi M. Iehara I. Takami K. Morimura S. Kumano Department of Environmental Systems Engineering Kochi University of Technology Kochi Japan System Technology Center Electronics Research & Development Department Mitsubishi Heavy Industries Limited Kobe Hyogo Japan Electronics Research & Development Department Mitsubishi Heavy Industries Limited Nagoya Japan

Non-uniform azimuth image shift of a rigid body is observed, for the first time, in the Radarsat images of moving ships in pitching motion. The pitching velocity is estimated from the SAR image of a known ship, and compared with that computed using a numerical model with the meteorological and ship's data; further comparison is made with the wave orbital velocity. The results are shown to be all in excellent agreement. Comparisons are also made between the pitching velocities of unknown ships with the wave orbital velocity, and a reasonable agreement is obtained.

关键词： Azimuth Marine vehicles Radar scattering Numerical models Ocean waves Industrial electronics Electronics industry Shipbuilding industry Layout Acceleration

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Digest making method based on turning point analysis

Digest making method based on turning point analysis

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International Conference on Web Information systems Engineering

作者： T. Hashimoto Y. Shirota A. Iizawa H. Kitagawa Software Research Center Software Technology Development Center Imaging System Business Group Ricoh Company Limited Bunkyo Tokyo Japan Faculty of Economics Gakushuin University Toshima Tokyo Japan Institute of Information Sciences & Electronics University of Tsukuba Tsukuba Ibaraki Japan

ISBN: (纸本)076951393X

A huge amount of multimedia content is available in the current Web environment. Streaming of video programs has become one of the popular Web-based information services. Automatic digest generation is an important application using video program streams. We have developed a digest making method called PDMS (Personal Digest Making Scheme). PDMS extracts significant scenes and constructs digests automatically using the video program meta data. In PDMS, only a successful play event such as a goal scored was considered significant, and a misplay event, such as a shot that did not score was not taken into account, although such an event may affect the game progress. This paper introduces a new concept of turning point analysis into PDMS. The turning point analysis is based on a winning probability for a sports programs. The winning probability indicates the probability of a home team beating an away team at the end of the game, given the current score and the time elapsed since the beginning of the game. Using the winning probability, we can more precisely evaluate the significance of each event, not merely a successful play but also a misplay. This paper presents turning point analysis for a soccer match. It also gives evaluation results of this extended PDMS, including turning point analysis for a recently broadcasted professional soccer match.

关键词： Turning Streaming media Layout Multimedia systems Data mining Games Multimedia communication DVD Broadcast technology Broadcasting

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Vision based navigation system for autonomous mobile robot (Locomotive experiments based on variable template matching)

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JSME International Journal, Series C: Mechanical systems, Machine Elements and Manufacturing 2000年第2期43卷 408-414页

作者： Abe, Yasunori Fukuda, Toshio Shikano, Masaru Arai, Fumihito Tanaka, Yoshio Research and Development Center Shinryo Corporation Center for Cooperative Research in Advanced Science and Technology Nagoya University Department of Micro System Engineering Nagoya University

We have previously developed a navigation system for autonomous mobile robots. It can find landmarks on the ceiling to move and work. However it is impossible to recognize landmark in case that the size of landmark is different from the size of template. In such cases, the robot cannot continue to work. Therefor we proposed Variable Template Matching (VTM) which makes it possible to recognize landmarks of different sizes. We realize VTM by using the optimization method that is called Evolution Strategy (ES). The robot can recognize the landmark faster by binary density projection to infer landmark parameters. Minus Fuzzy Template is useful for the robot to avoid misidentifying.

关键词： Mobile robots

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In/Sb halo doping and replaced anneal sequence for 80 nm CMOS 1

In/Sb halo doping and replaced anneal sequence for 80 nm CMO...

引用

1st International Workshop on Junction technology, IWJT 2000

作者： Toyoshima, Y. Miyashita, K. Morifuji, E. Nakayama, T. Yoshimura, H. System LSI Research and Development Center Toshiba Corporation Semiconductor Company Isogo-ku YokohamaKanagawa235-8522 Japan Advanced Logic Technology Department System LSI Division Toshiba Corporation Semiconductor Company 8 Shinsugita-cho Isogo-ku YokohamaKanagawa235-8522 Japan

ISBN: (纸本)4891140089

Doping techniques for substrate/well, halo structure and shallow extensions were investigated regarding MOSFET miniaturization. Application of heavy ions of antimony and indium for steep retrograde substrate/well and halo structure was examined. For pMOSFET, highly angled antimony ion implantation was found effective to control short channel effect (SCE) with high drive current and low junction leakage current. In contrast, for nMOSFET, indium halo structure was not necessarily effective to control SCE. Detailed understanding of indium diffusion behavior is required. Extension doping sequence was also examined from the process integration point of view. To minimize the thermal budget for extensions, source and drain formation sequence was re-constructed. Highly activated gate electrode and shallow extensions were obtained simultaneously with Co SALICIDE process compatibility. © 2000 Japan Soc. Of Applied Physics.

关键词： Ion implantation

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A 1.1 V SOI CMOS frequency divider using body-inputting SCL circuit technology

A 1.1 V SOI CMOS frequency divider using body-inputting SCL ...

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IEEE SOI-3D-Subthreshold Microelectronics technology Unified Conference (S3S)

作者： T. Fuse M. Tokumasu S. Kawanaka H. Fujii A. Kameyama M. Yoshimi S. Watanabe Computer & Network Systems Laboratory Corporate Research & Development Center Toshiba Corporation Japan Advanced CMOS Technology Development Group System LSI Development Center Semiconductor Company Toshiba Corporation Yokohama Japan Computer & Network Systems Laboratory Corporate Research & Development Center Toshiba Corporation Saiwai Japan

SOI CMOS technology is one of the most effective candidates for realization of low power and high performance digital/RF circuits, with demand for single-chip LSI in portable communications equipment. By optimizing the threshold voltage, the CMOS logic in digital circuits can operate at less than 1 V (Fujii et al, 1999; Fuse et al, 1997). In the series gating ECL (emitter coupled logic) or SCL (source coupled logic) which is often used in RF circuits, on the other hand, the minimum operating voltage is raised to 1.8-2.6 V, due to the stacked configuration where plural transistors are connected in series (Yamashina et al., 1992). In this paper, we propose a body-inputting SCL circuit, which decreases the minimum operating voltage to around 1 V, by applying the input signal to the body of SOI devices. The fabricated 1/128 frequency divider realized 1.1 V operation with a maximum clock frequency of 450 MHz and each current source of 35 /spl mu/A.

关键词： Frequency conversion CMOS logic circuits CMOS digital integrated circuits CMOS technology Radio frequency Coupling circuits Logic circuits Voltage Large scale integration Communication equipment

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In/Sb halo doping and replaced anneal sequence for 80 nm CMOS

In/Sb halo doping and replaced anneal sequence for 80 nm CMO...

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International Workshop on Junction technology

作者： Y. Toyoshima K. Miyashita E. Morifuji T. Nakayama H. Yoshimura System LSI Research & Development Center System LSI Division Toshiba Corporation Semiconductor Company Yokohama Kanagawa Japan Advanced Logic Technology Department System LSI Division Toshiba Corporation Semiconductor Company Yokohama Kanagawa Japan

ISBN: (纸本)4891140089

关键词： Annealing MOSFET circuits Indium Ion implantation Doping profiles Semiconductor device doping Large scale integration Substrates Leakage current CMOS logic circuits

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