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Study on the PAN carbon-fiber-innovation for modeling a successful R&D management

Synthesiology 2009年第2期2卷 154-164页

作者： Nakamura, Osamu Ohana, Tsuguyori Tazawa, Masato Yokota, Shinji Shinoda, Wataru Itoh, Junji Evaluation Division AIST Tsukuba Central 2 Tsukuba 305-8568 Japan Advanced Manufacturing Research Institute AIST Tsukuba Central 5 Tsukuba 305-8565 Japan Materials Research Institute for Sustainable Development AIST Anagahora 2266-98 Shimoshidami Moriyama-ku Nagoya 463-8560 Japan Research and Innovation Promotion Office AIST Kasumigaseki 1-3-1 Chiyoda-ku 100-8921 Japan Research Institute for Computational Sciences AIST Tsukuba Central 2 Tsukuba 305-8568 Japan Science and Technology Promotion Bureau Nagasaki Prefectural Government 2-13 Edo-machi Nagasaki 850-8570 Japan AIST Board of Trustees AIST Tsukuba Central 2 Tsukuba 305-8568 Japan

We have investigated the processes of invention of PAN (Polyacrylonitrile) carbon fiber and its technology transfer to private companies. From this investigation and analysis, we have found a new R&D management model, named "excited-oscillation model". This model suggests that both the top-down management and the personal motivation should be in phase and synergetic with each other. In this paper, the results and concept of the above model are described in detail.

关键词： Innovation model Management PAN-based carbon fiber technology transfer

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Effect of Acid Washing for Residual Transition Meal in Iron Phthalocyanine-Based Carbon Alloy Catalysts

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ECS Meeting Abstracts 2009年第37期MA2009-02卷

作者： Masaki Kobayashi Hideharu Niwa Makoto Saito Yoshihisa Harada Masaharu Oshima Hironori Ofuchi Kiyoyuki Terakura Takashi Ikeda Yuka Koshigoe Jun-ichi Ozaki Seizo Miyata The University of Tokyo Department of Applied Chemistry School of Engineering University of Tokyo Japan Synchrotron Radiation Research Institute Japan Advanced Institute of Science Technology Japan Atomic Energy Agency Gunma University New Energy and Industrial Technology Development Organization

Abstract not Available.

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No. 5Vol 42, No. 4, pp. 313–318, 2008A New Water-in-Powder technology A Novel Structure for Creating Unique Cosmetic Products

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International Journal of Cosmetic science 2009年第5期31卷

作者： K. Igarashi K. Sagara J. Egawa Department of Pure and Applied Chemistry Faculty of Science and Technology Tokyo University of Science 2641 Yamazaki Noda 27&8510 Makeup Products Development Laboratories Advanced Cosmetic Research Laboratories Research Laboratories KOSE Corporation 48-18 Sakae-cho Kita-ku Tokyo 114-0005 Japan

A Water-in-Powder cosmetic is one encapsulating a large amount of water with powders. In this study we explain why the cosmetic is possible. First we focused on hydrophilic and hydrophobic balance of nano-sized powder surface. We looked into the surface state of powders with the gas adsorption test and discovered the functional powders that have the optimized balance of hydrorepellency due to fractal surface and hydrophilicity due to free hydroxyl groups. By using this material, we created a new powder technology that can encapsulate a large quantity of water stably. We also looked into how the powders encapsulated water by observation with wet-SEM and how the encapsulated water is stabilized by measuring water mobility with 1 7Q-M\IJR As a result, we developed a new technology with water and powder. By encapsulating a large amount of water, we achieved a cosmetic with many unique characteristics : the powder cosmetic can change into liquid by application of friction on skin, it gives us comfort in use and provides a watery, cool feel. It also provides excellent makeup function by spreading smoothly on skin to form a uniform makeup coating. Keywords: water-in-powder, hydrorepellency, hydrophilicity, fractal, encapsulate, technology

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Construction of virtual low-noise space in noisy agricultural facility for safety and comfort

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Engineering in Agriculture, Environment and Food 2008年第2期1卷 77-83页

作者： Shiigi, Tomowo Kondo, Naoshi Ninomiya, Kazunori Kurita, Mitsutaka Nishi, Takao Namba, Kazuhiko Shimizu, Hiroshi Nishizu, Takahisa Graduate School of Science and Engineering Ehime University Japan Graduate School of Agriculture Kyoto University Japan Technology Development Department S.I.Seiko Co.Ltd. Matsuyama Shi Takaoka cho 66 Ehime Japan Research Institute of Intelligent Systems National Institute of Advanced Industrial Science and Technology Japan Okayama University Japan Faculty of Applied Biological Sciences Gifu University Japan

Many types of agricultural facilities have been constructed at many places around the world. Although most of the operations are mechanized at these facilities, high noise from mechanical systems often prevents operators from discharging their duties efficiently and results in an unsafe environment. Virtual low-noise space is defined as the space required by operators in order to smoothly communicate in a high-noise environment, i.e., they feel as though they are working in a low-noise environment. The virtual low-noise space has three functions: to reduce the noise around the operators' ears, to communicate by speech without noise, to recreate the audio image on the basis of the operators' mutual positions. In this research, virtual low-noise space was constructed using noise-canceling headphones, microphones, a TV camera, and computers.

关键词： Computer vision

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Influence of sputtering conditions to photoresist profiles and bump shapes after plating

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Journal of Japan Institute of Electronics Packaging 2008年第1期11卷 72-77页

作者： Misumi, Kouichi Yamanouchi, Atsushi Senzaki, Takahiro Washio, Yasushi Honma, Hideo Graduate School of Engineering Kanto Gakuin University 1-50-1 Mutsuurahigashi Kanazawa-ku Yokohama-shi Kanagawa 236-8501 Japan New Technology Development Section Research and Development Department Tokyo Ohka Kogyo Co. Ltd. 1590 Tabata Samukawa-machi Kouza-gun Kanagawa 253-0114 Japan Advanced Material Development Division 3 Research and Development Department Tokyo Ohka Kogyo Co. Ltd. 1590 Tabata Samukawa-machi Kouza-gun Kanagawa 253-0114 Japan Department of Applied Material and Life Science Faculty of Engineering Kanto Gakuin University 1-50-1 Mutsuurahigashi Kanazawa-ku Yokohama-shi Kanagawa 236-8501 Japan

Gold bumps are conventionally used for interconnection of TAB (Tape Automated Bonding), COF (Chip on Film), or COG (Chip on Glass) in the driver LSIs of liquid crystal displays for mobile devices. These bumps are generally formed using cyanide-free gold electro-plating, since electrolytes containing cyanide tend to damage organic photoresist. However, a cyanide gold-plating bath for printed writing boards is also sometimes used to make gold bumps. This study investigated the gold sputtering influence on photoresist profiles and bump shapes after gold deposition.

关键词： Photoresists

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Chemical controllability of charge states of nitrogen-related defects in HfOxNy: First-principles calculations

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Physical Review B 2008年第16期77卷 165130-165130页

作者： N. Umezawa K. Shiraishi Y. Akasaka A. Oshiyama S. Inumiya S. Miyazaki K. Ohmori T. Chikyow T. Ohno K. Yamabe Y. Nara K. Yamada Advanced Electronic Materials Center National Institute for Materials Science Tsukuba 305-0044 Japan Graduate School of Pure and Applied Sciences University of Tsukuba Tsukuba 305-8571 Japan Leading Edge Process Development Center Tokyo Electron Ltd. Yamanashi 407-0912 Japan Department of Applied Physics University of Tokyo Tokyo 113-8656 Japan Semiconductor Company Toshiba Corporation Yokohama 235-8522 Japan Graduate School of Advanced Sciences of Matter Hiroshima University Hiroshima 739-8530 Japan Nanotechnology Research Laboratories Waseda University Tokyo 169-0041 Japan Computational Materials Science Center National Institute for Materials Science Tsukuba 305-0047 Japan Semiconductor Leading Edge Technology Inc. Tsukuba 305-8569 Japan

Relative stabilities of nitrogen-related defects in HfOxNy have been extensively studied in terms of formation energies by using first-principles calculations. We have found that the two oxygen vacancies coupled with two substitutional nitrogen atoms at oxygen sites is the predominant defect in a low oxygen chemical potential (μO) with doubly positive [(NO)2(VO)2]+2 and neutral [(NO)2(VO)2]0 forms for the p-type and n-type silicon substrates, respectively. On the other hand, the negatively charged substitutional nitrogen [(NO)2]−2 predominates in a higher μO condition. A neutral defect, [(NO)2VO]0, is found to be stabilized in the midregion of μO, which indicates that the oxygen partial pressure is an important factor to control fixed charges that cause malfunction in HfOxNy-based devices. An electron counting concept is shown to be valid to predict the stable forms of the defects.

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Vacancy-type defects in MOSFETs with high-k gate dielectrics probed by monoenergetic positron beams

Vacancy-type defects in MOSFETs with high-k gate dielectrics...

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5th International Symposium on High Dielectric Constant Materials and Gate Stacks - 212th ECS Meeting

作者： Uedono, A. Hasunuma, R. Shiraishi, K. Yamabe, K. Inumiya, S. Akasaka, Y. Kamiyama, S. Matsuki, T. Aoyama, T. Nara, Y. Miyazaki, S. Watanabe, H. Umezawa, N. Chikyow, T. Ishibashi, S. Ohdaira, T. Suzuki, R. Yamada, K. Graduate School of Pure and Applied Science University of Tsukuba Tsukuba Ibaraki 305-8573 Japan Semiconductor Leading Edge Technologies Inc Tsukuba Ibaraki 305-8569 Japan Graduate School of Advanced Sciences of Matter Hiroshima University Kagamiyama Higashi-Hiroshima 739-8530 Japan Graduate School of Engineering Osaka University Suita Osaka 565-0871 Japan Advanced Electronic Materials Center National Institute for Materials Science Tsukuba Ibaraki 305-0044 Japan Research Institute for Computational Sciences National Institute of Advanced Industrial Science and Technology Tsukuba Ibaraki 305-8568 Japan Research Institute of Instrumentation Frontier National Institute of Advanced Industrial Science and Technology Tsukuba Ibaraki 305-8568 Japan Nano Technology Research Laboratory Waseda University Shinjuku Tokyo 16-0041 Japan Process and Manufacturing Engineering Center Toshiba Co. Isogo-Ku Yokohama 235-8522 Japan Leading Edge Process Development Center Tokyo Electron LTD. 650 Mitsuzawa Hosaka-cho Nirasaki City Yamanashi 407-0192 Japan

ISBN: (纸本)9781566775700

Vacancy-type defects in MOSFET structures fabricated with high-k (HfSiON) gate dielectrics were studied by monogenetic positron beams An expansion of open volumes in HfSiON fabricated on Si substrates using atomic layer deposition technique was observed with increasing nitrogen concentration This fact was discussed in terms of a role of nitrogen in Hf-related oxide using results obtained by first-principles calculation and XPS. MOSFETs fabricated by F +-channel implantation technique were also characterized. The major defect species which causes the F& shift of MOSFETs was identified as vacancy-fluorine complexes (such as V3F2) locate in channel regions of Si substrates. The preset work suggests that positron annihilation can be used to detect microscopic defects in MOSFETs, and it is a useful tool for determining process parameters for MOSFET fabrications with high-k gate dielectrics. © The Electrochemical Society.

关键词： Fabrication

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Role of the ionicity in defect formation in Hf-based dielectrics

Role of the ionicity in defect formation in Hf-based dielect...

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5th International Symposium on High Dielectric Constant Materials and Gate Stacks - 212th ECS Meeting

作者： Umezawa, N. Shiraishi, K. Miyazaki, S. Uedono, A. Akasaka, Y. Inumiya, S. Oshiyama, A. Hasunuma, R. Yamabe, K. Momida, H. Ohno, T. Ohmori, K. Chikyow, T. Nara, Y. Yamada, K. Advanced Electronic Materials Center National Institute for Materials Science Tsukuba 305-0044 Japan California NanoSystems Institute University of California Santa Barbara Santa Barbara 93106 United States Graduate School of Pure and Applied Sciences Univ. of Tsukuba Tsukuba 305-8571 Japan Graduate School of Advanced Sciences of Matter Hiroshima University Hiroshima 739-8530 Japan Leading Edge Process Development Center Tokyo Electron Ltd. Yamanashi 407-0912 Japan Semiconductor Leading Edge Technology Inc. Tsukuba 305-8569 Japan Semiconductor Company Toshiba Corporation Yokohama 235-8522 Japan Computational Materials Science Center National Institute for Materials Science Tsukuha 305-0047 Japan Nanotechnology Research Laboratories Waseda University Tokyo 169-0041 Japan

ISBN: (纸本)9781566775700

Ionicity has been raised as an important factor in discussing defect formation in Hf-based oxides. It has been elucidated from our first-principles calculations, that the stability of defects is dominated by Coulomb interactions between charged defects and surrounding ions. For instance, the formation energy of positively charged oxygen vacancies (Vo+2) is markedly decreased when they are coupled with substitutional N atoms at O sites, as the nominal charges of N3- are negatively greater than those of the oxygen ions O2-. Our computational results have further revealed that the ionic character of Hf causes generation of a low-lying Si dangling bond level in Si doped HfSiOx. These results suggest that one must take into account the ionicity of the Hf-based compounds, which possess totally different properties from the conventional gate insulator SiO2 in terms of defect formation. © The Electrochemical Society.

关键词： Calculations

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Ab Initio MO Studies of the Weak Interaction in Cu-Histamine-Tyrosine Complex as an Model of Pseudoazurin M16Y Mutant

Ab Initio MO Studies of the Weak Interaction in Cu-Histamine...

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2007年全国核反应会暨生物物理与核物理学科交叉前沿研讨会

作者： Umpei Nagashima Toshio Watanabe Takamitsu Kohzuma Yoshiko Uchida Osamu Yamauchi Research Institute for Computational Science National Institute of Advanced Industrial Science and Technology 1-1-1 Umezono Tsukuba Ibaraki 305-8568 Japan Research Institute for Computational Science National Institute of Advanced Industrial Science and Technology 1-1-1 Umezono Tsukuba Ibaraki 305-8568 Japan Institute of Applied Beam Science Ibaraki University 2-1-1 Bunkyo Mito Ibaraki 310-8512 Japan Institute of Applied Beam Science Ibaraki University 2-1-1 Bunkyo Mito Ibaraki 310-8512 Japan Faculty of Engineering Kansai University 2-1-1 Ryozenji-cho Takatsuki Osaka 569-1095 Japan

Noncovalent weak interactions play important roles in biological *** bonding and aromatic ring stacking interactions are well established weak interaction in the structure and function of proteins and nucleic ***,the biological significance of a weak interaction between metal ion coordinated imidazole ring and the phenyl ring of a phenylalanine residue has been found in plastocyanin from fern *** reported the spectroscopic and electrochemical studies of the M16F mutant of a blue copper protein,

关键词： Ab Initio MO Studies of the Weak Interaction in Cu-Histamine-Tyrosine Complex as an Model of Pseudoazurin M16Y Mutant Model

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Gene expression profiles of hepatic cell-type specific marker genes in progression of liver fibrosis

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World Journal of Gastroenterology 2006年第40期12卷 6473-6499页

作者： Yoshiyuki Takahara Mitsuo Takahashi Hiroki Wagatsuma Fumihiko Yokoya Qing-Wei Zhang Mutsuyo Yamaguchi Hiroyuki Aburatani Norifumi Kawada Exploratory and Applied Pharmaceutical Research Department Pharmaceutical Company Ajinomoto Co. Inc Kawasaki 210-8681 Japan Biochemical Information project BiolT Business Development Group Fujitsu Limited Tokyo Japan Center for Collaborative Research Research Center for Advanced Science and Technology the University of Tokyo Tokyo Japan Department of Hepatology Graduate School of Medicine Osaka City University Osaka Japan

AIM: To determine the gene expression profile data for the whole liver during development of dimethylni-trosamine (DMN)-induced hepatic ***: Marker genes were identified for different types of hepatic cells, including hepatic stellate cells (HSCs), Kupffer cells (including other inflammatory cells), and hepatocytes, using independent temporal DNA microarray data obtained from isolated hepatic cells. RESULTS: The cell-type analysis of gene expression gave several key results and led to formation of three hypotheses: (1) changes in the expression of HSC-specific marker genes during fibrosis were similar to gene expression data in in vitro cultured HSCs, suggesting a major role of the self-activating characteristics of HSCs in formation of fibrosis; (2) expression of mast cell-specific marker genes reached a peak during liver fibrosis, suggesting a possible role of mast cells in formation of fibrosis; and (3) abnormal expression of hepatocyte-specific marker genes was found across several metabolic pathways during fibrosis, including sulfur-containing amino acid metabolism, fatty acid metabolism, and drug metabolism, suggesting a mechanistic relationship between these abnormalities and symptoms of liver fibrosis. CONCLUSION: Analysis of marker genes for specific hepatic cell types can identify the key aspects of fibro-genesis. Sequential activation of inflammatory cells and the self-supporting properties of HSCs play an important role in development of fibrosis.

关键词： Liver fibrosis Gene expression Microarray Dimethylnitrosamine Marker genes Hepatic stellate cell Kupffer cell Hepatocytes Metabolic pathway

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