In this study, we precisely investigate the charge distribution in SiN layer by dynamic programming of channel hot hole induced hot electron injection (CHHIHE) in p-channel silicon-oxide-nitride-oxide-silicon (sonos) ...
详细信息
A dynamic programming method of Channel Hot Hole Induced Hot Electron (CHHIHE) injection with programming-current-clamped (PCC) scheme on P-channel sonos application is proposed in this paper. With the PCC scheme, a b...
详细信息
A dynamic programming method of Channel Hot Hole Induced Hot Electron (CHHIHE) injection with programming-current-clamped (PCC) scheme on P-channel sonos application is proposed in this paper. With the PCC scheme, a better programming efficiency and device reliability can be realized, and consequently up to 85% programming current reduction and over one order of retention lifetime improvement can be achieved. Moreover, it can also provide a tightened program state distribution with the benefit of lower programming power consumption, smaller high voltage pumping circuit area and better read sensing window.
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