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Entropy-Based Vocabulary Substitution for Incremental Learning in Multilingual Neural Machine Translation

Entropy-Based Vocabulary Substitution for Incremental Learni...

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2022 Conference on Empirical Methods in Natural Language Processing, EMNLP 2022

作者： Huang, Kaiyu Li, Peng Ma, Jin Liu, Yang Institute for AI Industry Research Tsinghua University Beijing China Dept. of Comp. Sci. & Tech. Institute for AI Tsinghua University Beijing China Beijing National Research Center for Information Science and Technology China Beijing Academy of Artificial Intelligence Beijing China Tencent Sch. of Comp. Sci. & Tech. University of Science and Technology of China China International Innovation Center of Tsinghua University Shanghai China Quan Cheng Laboratory China

In a practical real-world scenario, the longstanding goal is that a universal multilingual translation model can be incrementally updated when new language pairs arrive. Specifically, the initial vocabulary only covers some of the words in new languages, which hurts the translation quality for incremental learning. Although existing approaches attempt to address this issue by replacing the original vocabulary with a rebuilt vocabulary or constructing independent language-specific vocabularies, these methods can not meet the following three demands simultaneously: (1) High translation quality for original and incremental languages, (2) low cost for model training, (3) low time overhead for preprocessing. In this work, we propose an entropy-based vocabulary substitution (EVS) method that just needs to walk through new language pairs for incremental learning in a large-scale multilingual data updating while remaining the size of the vocabulary. Our method has access to learn new knowledge from updated training samples incrementally while keeping high translation quality for original language pairs, alleviating the issue of catastrophic forgetting. Results of experiments show that EVS can achieve better performance and save excess overhead for incremental learning in the multilingual machine translation task. © 2022 Association for Computational Linguistics.

关键词： Computational linguistics

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Research on suppression method of straight edge diffraction effect of mosaic grating

Research on suppression method of straight edge diffraction ...

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2023 Applied Optics and Photonics China: Nanophotonics, AOPC 2023

作者： Sun, Shuncheng Chen, Xinrong Li, Chaoming Xu, Gaoxiang Wu, Tao Pan, Jiayao Sun, Lei Sch. of Optoelectron. Sci. and Eng. and Collab. Innov. Center of Suzhou Nano Science and Technology Soochow University Suzhou215006 China Key Lab of Adv. Optical Mfg. Technol. of Jiangsu Prov. and Key Lab of Mod. Optical Technol. of Educ. Min. of China Soochow University Suzhou215006 China

ISBN: (纸本)9781510672284

The diffraction characteristics of amplitude and phase-Type soft-edge apertures with super-Gaussian transmittance at the gap of mosaic grating are investigated in this article. A well-designed soft-edge apertures can effectively suppress the Fresnel straight-edge diffraction intensity distribution at a certain transmission distance and consequently homogenize the overall light intensity on the image plane. We use the PV value, which is the difference between the maximum intensity of Fresnel diffraction and the initial incident intensity, as the evaluation index of diffraction intensity homogenization. Compared with use of the hard-edge aperture, the PV value reduces from 0.6 to 0.009 and 0.051 at the distance of 0.5m and 1m respectively with use of the super-Gaussian amplitude type soft-edge apertures designed by us. While using the super-Gaussian phase type soft-edge apertures designed by us, the PV value reduces from 0.6 to 0.053 and 0.06 at the distance of 0.5m and 1m respectively. © COPYRIGHT SPIE. Downloading of the abstract is permitted for personal use only.

关键词： Gaussian distribution

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Study on the impact of grating absorption on substrate temperature under intense laser irradiation

Study on the impact of grating absorption on substrate tempe...

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2023 Applied Optics and Photonics China: Nanophotonics, AOPC 2023

作者： Xu, Gaoxiang Li, Chaoming Chen, Xinrong Sun, Shuncheng Pan, Jiayao Wu, Tao Sun, Lei Sch. of Optoelectron. Sci. and Eng. and Collab. Innov. Center of Suzhou Nano Science and Technology Soochow University Suzhou215006 China Key Lab of Adv. Optical Mfg. Technol. of Jiangsu Prov. and Key Lab of Mod. Optical Technol. of Educ. Min. of China Soochow University Suzhou215006 China

ISBN: (纸本)9781510672284

Grating absorption is a phenomenon influenced by various factors such as material properties, grating structure, and characteristics of the incident light. Under intense laser irradiation, the absorbed energy of the laser is converted into thermal energy, resulting in an elevated temperature of both the grating and substrate. This temperature rise significantly compromises the optical performance of the grating, thereby imposing constraints on the advancement of high-power laser systems. The numerical simulations were performed using the finite element method to investigate the effects of different absorptivity of grating, spot sizes, substrate materials (Fused silica, BK7 and Sapphire), and convective coefficients of air on the temperature distribution at various locations on the substrate under high-power laser irradiation (30kW/cm2). Comparative analysis reveals that selecting sapphire as the substrate material under high-power laser irradiation results in better heat dissipation. © COPYRIGHT SPIE. Downloading of the abstract is permitted for personal use only.

关键词： Finite element method

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Epitaxial Growth of High-Quality GaN Films Based on Bilayer Graphene 20

Epitaxial Growth of High-Quality GaN Films Based on Bilayer ...

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20th China International Forum on Solid State Lighting and 9th International Forum on Wide Bandgap Semiconductors, SSLCHINA: IFWS 2023

作者： Zhou, Jizong Xu, Yu Wang, Xiao Wang, Yuning Yue, Long Wang, Jianfeng Cao, Bing Xu, Ke Sch. of Optoelectron. Sci. and Eng. Collab. Innovation Center of Suzhou Nano Science and Technology Soochow University Suzhou215006 China Key Lab of Advanced Optical Manufacturing Technologies of Jiangsu Province Key Lab of Modern Optical Technologies of Education Ministry of China Soochow University Suzhou215006 China Suzhou215123 China Suzhou Nanowin Science and Technology Co Ltd Suzhou215123 China Jiangsu Institute of Advanced Semiconductors Ltd Suzhou215000 China

ISBN: (纸本)9798350385373

Remote epitaxial GaN thin films are important to study for the preparation of flexible optoelectronic devices. In this paper, the growth of GaN films on graphene was carried out by a two-step method, and a dense nucleation layer was formed on graphene by regulating the growth parameters, and GaN films with good uniformity were obtained during the high-temperature film formation process. GaN films grown on AlN/sapphire templates were compared under the same growth conditions. The surface roughness, dislocation density, and film stress of GaN films grown on graphene were found to be superior to those grown on AlN/sapphire templates. It lays a foundation for the subsequent epitaxy of high-quality GaN films and the preparation of high-performance devices. © 2023 IEEE.

关键词： Graphene

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On the Uplink Performance of Multi-User MC-CDMA Satellite-Terrestrial Deliveries

On the Uplink Performance of Multi-User MC-CDMA Satellite-Te...

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International Conference on Wireless Communications and Signal Processing (WCSP)

作者： Yi Zhang Weihao Yan Tian Yuan Ping Yan Jinpeng Song Xiangyuan Bu Southwest China Institute of Electronic Technology Chengdu China School of Information and Electronics Beijing Institute of Technology Beijing China Sch. Cyberspace Sci. Tech. Beijing Institute of Technology Beijing China

ISBN: (纸本)9781665450867

Multi-carrier (MC)-code-division multiple-access (CDMA) is capable of offering some merits, e.g., spectral efficiency, high flexibility, and multiple access capabilities, because of the combination of the MC modulation and spread spectrum. Then, it has already been regarded as a promising method for satellite communication systems to realize global broad coverage. By observing the fact that all related works only focus on the downlink transmission, this work presents a performance analysis model to show how the system parameters, e.g., the asynchronization of the clock and the frequency drifts among the multiple terrestrial users, influence the uplink transmission performance of satellite-terrestrial systems.

关键词： Wireless communication Analytical models Multicarrier code division multiple access Spectral efficiency Modulation Interference Downlink

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Preparation of Ultra-Small 5 μm Blue InGaN Micro-Light-Emitting Diodes 20

Preparation of Ultra-Small 5 μm Blue InGaN Micro-Light-Emit...

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20th China International Forum on Solid State Lighting and 9th International Forum on Wide Bandgap Semiconductors, SSLCHINA: IFWS 2023

作者： Huang, Jinbiao Le, Meng Wang, Ziwei Wang, Qiqi Xu, Yu Wang, Guobin Cao, Bing Sch. of Optoelectronics Sci. and Eng. Collab. Innov. Center of Suzhou Nano Science and Technology Soochow University Suzhou215006 China Soochow University Key Lab of Adv. Optical Mfg. Technol. of Jiangsu Prov. and Key Lab of Mod. Optical Technol. of Educ. Min. of China Suzhou215006 China Suzhou215123 China Suzhou215123 China

ISBN: (纸本)9798350385373

With the increasing popularity of augmented and virtual reality systems, micro light-emitting diodes (μLEDs) have emerged as a key area of research. The preparation process for ultra-small-size μLEDs is still underdeveloping and hinders the industrialization of μLEDs microdisplay technology. Based on conventional contact ultraviolet lithography, a study was conducted on the fabrication process of ultra-small μLEDs. A 5 μm mesa structure was defined using a two-step photoresist -silicon dioxide etching sch.me, and the formation process of small-sized mesas was investigated. The coating and stripping sch.me for small-sized electrodes were optimized using a bilayer photoresist bonding process to achieve electrode expansion and preparation with small conductor widths. Arrays of 5 × 5 μm2 μLEDs with uniform surface morphology and good optoelectronic properties were then fabricated. This approach provides a practical solution for scaling up sub-10 μm μLEDs for display applications. © 2023 IEEE.

关键词： Electrodes

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MBE growth of Ga droplets with the size of wide distribution via an in-situ laser irradiation

MBE growth of Ga droplets with the size of wide distribution...

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2023 Advanced Fiber Laser Conference, AFL 2023

作者： Han, Zhaoxiang Zhu, Zequn Zhang, Gaojun Geng, Biao Ren, Maoyun Cheng, Lingsu Shi, Zhenwu Peng, Changsi Sch. of Optoelectron. Sci. and Eng. and Collab. Innov. Center of Suzhou Nano Science and Technology Soochow University Suzhou215006 China Key Lab of Adv. Optical Mfg. Technol. of Jiangsu Prov. and Key Lab of Mod. Optical Technol. of Educ. Min. of China Soochow University Suzhou215006 China Institute of Research for Applicable Computing University of Bedfordshire Park Square LutonLU1 3JU United Kingdom

ISBN: (纸本)9781510677661

Droplet epitaxy is a very powerful technology for the fabrication of semiconductor quantum optoelectronic devices due to its offering all-preparation of quantum dots, nanowires and nanorings. As is known, the size control of the droplets is a key issue for the droplet epitaxy. Usually, the droplet size is adjusted by the growth temperature and growth rate based on the well-known MBE method, but it is still quite limited. In this work, we attempted to use an in situ laser irradiation to modify the Ga droplet size during the MBE growth. Two groups of samples were prepared: for all the samples, after the growth of a 300nm GaAs buffer layer on GaAs substrate, the total following deposition amount of Ga is 8ML with a single in-situ shot of laser irradiation. In contrast, for group A, the exposure was performed when the 8ML Ga deposition was completely finished, while for group B, the exposure was inserted in the middle of the deposition, i.e., when it reached 4ML. We carefully compared the effect of the insertion position of the exposure on the obtained droplet morphology with different pulse energies. The results show the droplet size can be strongly adjusted via the in-situ laser irradiation especially when it is inserted in the middle of the droplet growth. Finally, droplets have specific heights and widths with an extremely wide distribution ranging from 0.7nm to 97.3nm and 21.6nm to 396.5nm, respectively, are successfully realized. © COPYRIGHT SPIE. Downloading of the abstract is permitted for personal use only.

关键词： Pulsed lasers

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Observation of gallium droplets directly formed on GaAs substrate by in-situ laser irradiation

Observation of gallium droplets directly formed on GaAs subs...

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2023 Advanced Fiber Laser Conference, AFL 2023

作者： Zhu, Zequn Geng, Biao Zhang, Gaojun Han, Zhaoxiang Cheng, Lingsu Ren, Maoyun Shi, Zhenwu Peng, Changsi Sch. of Optoelectron. Sci. and Eng. and Collab. Innov. Center of Suzhou Nano Science and Technology Soochow University Suzhou215006 China Key Lab of Adv. Optical Mfg. Technol. of Jiangsu Prov. and Key Lab of Mod. Optical Technol. of Educ. Min. of China Soochow University Suzhou215006 China Institute of Research for Applicable Computing University of Bedfordshire Park Square LutonLU1 3JU United Kingdom

ISBN: (纸本)9781510677661

In this study, following the deposition of a 500nm GaAs buffer layer, the GaAs substrate was irradiated in MBE with an in situ laser shooting at a very low temperature of around 12°C. We carefully observed the morphology evolution of the irradiated surface with different pulse energy varying from 20mJ to 50mJ. After being pulsed-irradiated with 20mJ, a density of Ga droplets as high as 7.2×1010/cm2 was directly formed on the surface. The droplets have a height range of 1.0nm to 4.1nm (averaging at 2.4nm) and a width range of 15.7nm to 39.2nm (averaging at 28.1nm). With increasing irradiation energy, it is observed the droplet density will gradually decrease from 2.2 × 1010/cm2, 1.2 × 1010/cm2 to 5.2 × 109/cm2 while the size (average width/height) will continue to grow up from 64.1nm/8.2nm, 63.3/9.2nm to 76.1nm/12.2nm, respectively corresponding to exposure energy from 30mJ, 40mJ to 50mJ. The results demonstrate the successful provision of a new technology to generate Ga droplets on the surface of GaAs directly through in-situ pulsed laser irradiation without the need of epitaxial growth. Furthermore, both the resulting density and size can be easily and effectively adjusted by varying the laser energy. Additionally, this technique offers significant advantages such as low cost, free of contamination and defects and high controllability. Therefore, we believe this technology may find great application prospects for nano-fabrication of semiconductor quantum structures and devices. © COPYRIGHT SPIE. Downloading of the abstract is permitted for personal use only.

关键词： Pulsed lasers

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Fabrication of GaAs quantum rings by in-situ laser irradiation

Fabrication of GaAs quantum rings by in-situ laser irradiati...

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2023 Advanced Fiber Laser Conference, AFL 2023

作者： Zhang, Gaojun Geng, Biao Zhu, Zequn Han, Zhaoxiang Cheng, Lingsu Ren, Maoyun Shi, Zhenwu Peng, Changsi Sch. of Optoelectron. Sci. and Eng. and Collab. Innov. Center of Suzhou Nano Science and Technology Soochow University Suzhou215006 China Key Lab of Adv. Optical Mfg. Technol. of Jiangsu Prov. and Key Lab of Mod. Optical Technol. of Educ. Min. of China Soochow University Suzhou215006 China Institute of Research for Applicable Computing University of Bedfordshire Park Square LutonLU1 3JU United Kingdom

ISBN: (纸本)9781510677661

In this work, after depositing a GaAs buffer layer (approx. 200nm) via molecular beam epitaxy, we subjected the GaAs substrate to in-situ irradiation by 15 laser pulses (pulse duration ∼10ns) with varying single-pulsed energies of 10mJ, 15mJ, 20mJ, and 30mJ, corresponding to samples A-D. For sample A, quantum rings with a density of 3.75×108/cm2 are observed, of which the average height and width are 1.4nm and 22.2nm, respectively. For sample B, the density, average height and width are 5×108/cm2, 2.5nm and 69.1nm. With an increase in laser energy, the density and size of sample C and D have increased to 7×108/cm2-3.6nm (height)-78.5nm (width) and 1×109/cm2-5.2nm (height)-86.1nm (width) respectively. Obviously, this novel technology that the GaAs quantum rings can be fabricated in-situ through multi-pulsed laser irradiation whilst the size and density of the quantum rings can be effectively adjusted by varying the laser energy would have significant applications in all types of semiconductor devices based on quantum rings in the future. © COPYRIGHT SPIE. Downloading of the abstract is permitted for personal use only.

关键词： Gallium arsenide

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LeFUNet: UNet with Learnable Feature Connections for Teeth Identification and Segmentation in Dental Panoramic X-ray Images

LeFUNet: UNet with Learnable Feature Connections for Teeth I...

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IEEE International Conference on Bioinformatics and Biomedicine (BIBM)

作者： Yunbo Rao Obed Tettey Nartey Shaoning Zeng Kingsley Nketiah Acheampong Charles Roland Haruna Jianxun Sun Sch. of Inf. and Software Eng Uni. of Electronic Sci. and Tech. of China Chengdu China Sch. of Inf. and Software Eng Uni. of Elect. Sci. and Tech. of China Chengdu China Yangtze Delta Region Institute (Huzhou) Uni. of Elect. Sci. and Tech. of China Huzhou China Computer Science and Information Tech University of Cape Coast Cape Coast Cape Coast Ghana West China School of Stomatology Sichuan University Chengdu China

ISBN: (数字)9781665468190

ISBN: (纸本)9781665468206

Deep learning methods have widely been applied to accurately identify and segment individual teeth in panoramic X-ray radiographs. However, the task becomes challenging as deep learning models grow deeper and wider. Contextual information have to pass through many layers leading to features vanishing before reaching the end of the model. This study proposes a deep learning-based three-step model to identify and segment individual teeth from panoramic X-ray radiographs to address the issues above. Firstly, an automatic binarized transformation of panoramic images to deal with computational complexity of high-dimensionality with respect to less training data is conducted. The transformed images are then trained on with a vanilla top-down learnable feature connection based UNet. Specifically, a learnable feature connection module that incorporates an improved squeeze and excitation module with dense connections to ensure feature propagation and facilitating information flow throughout the network is designed and conveniently plunged into a UNet. Finally, accurate individual tooth identification and segmentation is achieved using proposed regions via bounding detection techniques. Extensive evaluation on a publicly available dental panoramic X-ray benchmark demonstrated the effectiveness the proposed sch.me by obtaining a Dice score of 96.94%, 97.93% for accuracy, 97.03% for recall, 96.81% for precision, 97.61% for specificity and 93.52% for Jaccard Coefficient Score, which are significantly superior to the recent state-of-the-art methods for individual tooth identification and segmentation.

关键词： Deep learning Radiography Image segmentation Face recognition Computational modeling Training data Teeth

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