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检索条件"机构=Sch. of Elec. Engineering and Computer Science"

共 863 条记录，以下是461-470 订阅

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Spatial Error Concealment Algorithm Using Novel Block Classification with a Variable Operating Region

Spatial Error Concealment Algorithm Using Novel Block Classi...

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作者： Kim, Byung-Ju Kwon, Kee-Koo Lee, Suk-Hwan Kwon, Seong-Geun Lee, Kuhn-Il Sch. of Elec. Eng./Computer Science Kyungpook National University 1370 Sankyug-dong Buk-gu Daegu 702-701 Korea Republic of

A novel postprocessing algorithm for concealing spatial block errors in block-based coded images is proposed using block classification with a variable operating region (VOR). In the proposed algorithm, a missing block is classified as flat, edge, or complex based on local information from the surrounding blocks which is extracted using a Sobel operation in a VOR. In this case, the VOR is determined adaptively according to the number of edge directions in the missing block. Using the classification, the flat blocks are then concealed by the linear interpolation (LI) method, the edge blocks are concealed by the boundary multi-directional interpolation (BMDI) method, and the complex blocks are concealed by a combined linear interpolation and boundary matching (CLIBM) method. Experimental results demonstrated that the proposed algorithm improved the PSNR and visual quality of the concealment for both original images and JPEG compressed images, and produced better results than conventional algorithms.

关键词： Image coding

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A Production-Oriented Multiplexing System for Testing above 2.5 Gbps

A Production-Oriented Multiplexing System for Testing above ...

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Proceedings International Test Conference 2003

作者： Keezer, D.C. Minier, D. Caron, M.C. Georgia Institute of Technology Sch. of Elec./Computer Engineering Atlanta GA 30332-0250 United States IBM Canada Bromont Que. Canada

A system for testing multi-gigahertz digital devices is described that uses conventional automated test equipment (ATE), supplemented with multiplexing and sampling logic. The approach is similar to earlier work that demonstrated feasibility. However, this current paper solves many of the practical problems that limited application in production environments. Specifically, embedded logic is used for fast/reliable auto-calibration of critical timing signals to achieve improved accuracy (typically ±25ps). Variable output-level buffers are included in the multiplexing logic to provide a range of input levels to the device under test. Coaxial relays selec.ively switch between high-speed and DC modes of testing. Air- and liquid-cooling is used to maintain the elec.ronics temperature, and thereby stabilize time delays. The production version of the system is scalable up to 144 high speed differential pairs, each operating at 2.5 Gbps. Overall timing accuracy (OTA) is about ±100ps, and is typically much better. Timing errors are found to be dominated by the ATE timing uncertainty, which is nevertheless improved through the use of the embedded calibration logic [patent pending]. The OTA includes peak-to-peak jitter (at a bit error rate of 10-12). The system is demonstrated by applying it to an AMCC 17×17 cross point switch that supports data rates as high as 3.2 Gbps. Additional elec.ronic modules are under development that will further extend the maximum data rate (initially to 3.2 Gbps, then to 5 Gbps and above), while tightening the OTA.

关键词： elec.ronic equipment testing

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Comparison of various buffer sch.mes to grow GaN on large-area Si(111) substrates using metal-organic chemical-vapor deposition

Comparison of various buffer schemes to grow GaN on large-ar...

引用

作者： Venugopal, R. Wan, J. Melloch, M. Kim, G. Zank, G. Tsoi, S. Ramdas, A. Sch. of Elec./Computer Engineering Purdue University West Lafayette IN 47907 United States Dow Corning Corporation Midland MI 48686 United States

A comparison of gallium-nitride (GaN) films grown on large-area Si(111) using a single aluminum-nitride (AlN) buffer, an AlN/graded-AlxGa1-xN buffer, and the introduction of additional low-temperature (LT)-grown AlN interlayers is reported. A graded-AlGaN buffer followed by additional LT-AlN interlayers is shown to completely eliminate cracking in nitride films of thickness >2 μm and also reduce the threading-dislocation density significantly. A partial compensation of GaN-tensile strain by the compressive-lattice strain induced by the AlGaN and AlN layers is responsible for this effect. The surface roughness is increased by the introduction of the LT-AlN buffers.

关键词： Metallorganic chemical vapor deposition

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Model-based smoothing for reducing artifacts in compressed images

Model-based smoothing for reducing artifacts in compressed i...

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2003 IEEE International Conference on Accoustics, Speech, and Signal Processing

作者： Zou, Ju Jia Yan, Hong Sch. of Elec./Info. Engineering University of Sydney Sydney NSW 2006 Australia Department of Computer Engineering City University of Hong Kong Kowloon Hong Kong

Blocking artifacts often appear in compressed images coded by the block discrete cosine transform. This paper presents a smoothing method for reducing those artifacts. The method is based on adjusting pixel intensities of a blocky image to values determined by a smooth model image. Certain points in the blocky image are selec.ed to construct a triangular mesh. The mesh forms the model image. The adjusted image is further subject to a narrow quantization constraint. The method produces superior images in terms of subjective quality and objective quality when compared to existing methods. It is fast since no iterations are required.

关键词： Image compression

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PACVD of Plasma Polymerized Organic Thin Films and Comparison of their elec.rochemical Properties

PACVD of Plasma Polymerized Organic Thin Films and Compariso...

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2003 IEEE International Conference on Plasma science

作者： Bae, I.-S. Cho, S.-H. Kim, M.-C. Roh, Y.-H. Boo, J.-H. Institute of Basic Science Department of Chemistry Sungkyunkwan University Suwon 440-746 Korea Republic of Sch. of Elec./Computer Engineering Sungkyunkwan University Suwon 440-746 Korea Republic of

Plasma polymerized organic thin films were deposited on Si(100) glass and metal substrates using thiophene and ethylcyclohexane precursors by PECVD method. In order to compare elec.rochemical properties of the as-grown thin films, the effects of the RF plasma power in the range of 30-100 W. AFM showed that the polymer films with smooth surface and sharp interface could be grown under various deposition conditions. Impedance analyzer was utilized for the determination of I-V curve for leakage current density and C-V for dielec.ric constants, respectively. To obtain C-V curve, we used a MIM structure of metal(Al)-insulator(plasma polymerized thin film)-metal(Pt) structure. Al as the elec.rode was evaporated on the thiophene films that grew on Pt coated silicon substrates, and the dielec.ric constants of the as-grown films were then calculated from C-V data measured at 1MHz. From the elec.rical property measurements such as I-V and C-V characteristics, the minimum dielec.ric constant and the best leakage current of thiophene thin films were obtained to be about 3.22 and 1 × 10-11 A/cm2. However, in case of ethylcyclohexane thin films, the minimum dielec.ric constant and the best leakage current were obtained to be about 3.11 and 5 × 10-12 A/cm2.

关键词： Plasma polymerization

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Microcrystalline Silicon Growth Using a Inductive Coupled Plasma CVD on Plastic Substrate

Microcrystalline Silicon Growth Using a Inductive Coupled Pl...

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2003 IEEE International Conference on Plasma science

作者： Kim, D.Y. Seo, C.K. Sim, M.S. Kim, C.H. Bae, S.J. Yi, Junsin Sch. of Elec./Computer Engineering Sungkyunkwan Univ. 300 Chunchun-dong Jangan-gu Kyunggi-do Suwon 440-746 Korea Republic of

Recently, the plastic materials are very useful as the substrate of the flexible, light and portable elec.ronics. Although the plastic substrates have many advantages such as thin film solar cell, thin film transistor and thin film sensors, its application has a difficulty of the limitation of temperature, surface hardness, and corrosion resistance on the acid or alkali. In general, hydrogenated amorphous silicon (a-Si:H) films are found in a broad range of elec.ronic devices such as radiation detectors, photovoltaic (PV) devices, thin film transistors (TFTs), display devices, and memory device applications. However, a-Si:H detectors and TFTs show some limitations because of their low carrier mobility. A-Si:H solar cells have exhibited problems on stability of conversion efficiency. These problems regarding a-Si:H films can be solved by replacing a-Si:H with microcrystalline silicon (μc-Si) film. The goal of our research is to determine the best process conditions for the growth of μc-Si on a plastic substrate The films of μc-Si with thickness in the range 20-120nm were deposited in inductive coupled plasma chemical vapor deposition (ICP-CVD) system from mixture of diluted silane (SiH4 20% in He) and H2 at low temperature of 100°. Polycarbonate (PC) substrate (1mm thickness) 50×50 mm2 was used as substrate. PC substrate has a higher heat resist of 130° than other plastic substrate and no problem to the alkali liquid. To verify the growth of μc-Si film using an ICP-CVD, we investigated crystalline seeding layer on the plastic substrate and the optimized growth parameters of ICP. They were ultrasonically cleaned in methanol, D.I. water rinsed, and nitrogen-gas blown dry. The investigated process parameters for the Si film growth include: plasma ignition conditions, rf power, input gas ratio, process pressure, with or without carrier gas. An atomic force microscope (AFM) was employed for the surface morphology study and growth mechanism. An argon laser drive-Raman spec

关键词： Inductively coupled plasma

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Optimal tilings and best basis search in large dictionaries

Optimal tilings and best basis search in large dictionaries

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Conference Record of the Thirty-Seventh Asilomar Conference on Signals, Systems and computers

作者： Huang, Yan Pollak, Ilya Do, Minh N. Bouman, Charles A. Sch. of Elec./Computer Engineering Purdue University 1285 EE Building West Lafayette IN 47907 Department of Electrical Engineering Beckman Institute University of Illinois Urbana-Champaign

We develop a new framework of multitree dictionaries which include many previously proposed dictionaries as special cases. We show how to efficiently find the best object in a multitree dictionary using a recursive dy... 详细信息

关键词： Dynamic programming

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Characterization of 10 μm Thick Porous Silicon Dioxide Obtained by Complex Oxidation Process for RF Application

Characterization of 10 μm Thick Porous Silicon Dioxide Obta...

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作者： Park, Jeong-Yong Lee, Jong-Hyun Sch. of Elec. Eng./Computer Science Kyungpook National University 1370 Sankyuk-Dong Puk-Gu Taegu 702-701 Korea Republic of

This paper proposes a 10 μm thick oxide layer structure, which can be used as a substrate for RF circuits. The structure has been fabricated by anodic reaction and complex oxidation, which is a combined process of low temperature thermal oxidation (500°C, for 1 hr at H2O/O2) and a rapid thermal oxidation (RTO) process (1050°C, for 1 min). The elec.rical characteristics of oxidized porous silicon layer (OPSL) were almost the same as those of standard thermal silicon dioxide. The leakage current through the OPSL of 10 μm was about 100-500 pA in the range of 0 V to 50 V. The average value of breakdown field was about 3.9 MV / cm. From the X-ray photo-elec.ron spectroscopy (XPS) analysis, surface and internal oxide films of OPSL, prepared by complex process, were confirmed to be completely oxidized. Also the role of RTO was important for the densification of the porous silicon layer (PSL), oxidized at a lower temperature. For the RF test of Si substrate, with thick silicon dioxide layer, we have fabricated high performance passive devices such as coplanar waveguide (CPW) on OPSL substrate. The insertion loss of CPW on OPSL prepared by complex oxidation process was -0.39 dB at 4 GHz and similar to that of CPW on OPSL prepared at a temperature of 1050° (1 hr at H2O/O2). Also the return loss of CPW on OPSL prepared by complex oxidation process was -23 dB at 10 GHz which is similar to that of CPW on OPSL prepared by high temperature oxidation.

关键词： Porous silicon

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Application of CPW based spiral-shaped defected ground structure to the reduction of phase noise in V-band MMIC oscillator

Application of CPW based spiral-shaped defected ground struc...

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2003 IEEE MTT-S International Microwave Symposium Digest

作者： Lee, Young-Taek Lim, Jong-Sik Kim, Sungwon Lee, Jaechun Nam, Sangwook Seo, Kwang-Seok Ahn, Dal Sch. of Elec. Eng./Computer Science Seoul National University Seoul Korea Republic of Div. of Info. Technology Engineering Soonchunhyang University Chungnam Korea Republic of

The CPW based spiral-shaped defected ground structure (DGS) is used in MMIC for the first time to reduce the phase noise in V-band MMIC oscillator. The parallel equivalent L-C components resulted from the defects on the both ground planes in CPW produce a band rejection property. Hence the spiral-shaped DGS can be employed at the gate circuit of the series feedback oscillator to improve quality factor of the oscillator. A V-band CPW MMIC oscillator incorporated with this DGS resonator was designed, fabricated and measured. To demonstrate the effect of the spiral-shaped DGS on phase noise, another oscillator with only conventional open stub CPW line was also tested. The phase noise performance of the oscillator with spiral-shaped DGS is improved by 8 dB compared to that of the oscillator without DGS.

关键词： Monolithic microwave integrated circuits

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Multi-path selec.ion for multiple description encoded video streaming

Multi-path selection for multiple description encoded video ...

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2003 International Conference on Communications (ICC 2003)

作者： Begen, Ali C. Altunbasak, Yucel Ergun, Ozlem Sch. of Elec./Computer Engineering Georgia Institute of Technology Atlanta GA 30332-0250 United States Sch. of Indust./Systems Engineering Georgia Institute of Technology Atlanta GA 30332-0205 United States

This paper presents a new framework for multimedia streaming that integrates the application and network layer functionalities to meet such stringent application requirements as delay and loss. The coordination between these two layers provides more robust media transmission even under severe network conditions. In this framework, a multiple description source coder is used to produce multiple independently-decodable streams that are routed over partially link-disjoint (non-shared) paths to combat bursty packet losses. We model multi-path streaming and propose a multi-path selec.ion method that chooses a set of paths maximizing the overall quality at the client. Overlay infrastructure is then used to achieve multi-path routing over these selec.ed paths. The simulation results show that the average peak signal-to-noise ratio (PSNR) improves by up to 8.1 dB, if the same source video is routed over intelligently selec.ed multiple paths instead of the shortest path or maximally link-disjoint paths. In addition to PSNR improvement in quality, the end-user experiences a more continual streaming quality.

关键词： Multimedia systems

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