Limitations in current backplane environments impede high-speed data transmission above 5 Gb/s. In this paper, a system architecture to extend the transmission capacities of legacy backplanes is proposed. The incentiv...
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Limitations in current backplane environments impede high-speed data transmission above 5 Gb/s. In this paper, a system architecture to extend the transmission capacities of legacy backplanes is proposed. The incentives for using a four-level pulse amplitude modulation (4-PAM) sch.me are also presented. The architecture is built from feed-forward equalizer and tunable filter elements for near-end crosstalk noise cancellation. Each of the circuits is implemented in a standard 0.18-μm CMOS process. The building blocks of the architecture, which include an LC ladder, a modified Gilbert-cell multiplier with improved headroom, and a tunable active high-pass filter are described in detail. Results of the architecture are shown demonstrating 20-Gb/s 4-PAM signal transmission.
This paper presents the development of tunable filters using ohmic contact microelec.romechanical system switches. It is shown that this type of switch is very well suited for the fabrication of low-loss high tuning-r...
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This paper presents the development of tunable filters using ohmic contact microelec.romechanical system switches. It is shown that this type of switch is very well suited for the fabrication of low-loss high tuning-range microwave filters. Two sets of tunable K u-band microstrip filters and resonators have been fabricated, with measured tuning ranges of 20% and 44%, and unloaded quality factors better than 75 in all cases. The 2-bit 5.7% fractional bandwidth, tunable bandpass filters exhibit insertion losses lower than 3.2 dB in all states.
Oxide surface passivation grown by atomic layer deposition (ALD) has been applied to GaAs metal-semiconductor field-effect transistors (MESFETs). The breakdown characteristic of a MESFET is greatly improved by both Al...
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The recent advance in soft solution processing of inorganic materials offers an exciting opportunity to develop large-area manufacturing technologies for inorganic thin-film transistors (TFTs). In this paper, we repor...
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In this paper, we propose a novel approach to stereo correspondence based on the optimization of a continuous disparity surface defined parametrically using radial basis functions. Principal advantages over other meth...
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The point spread function (PSF) is of central importance in the image restoration of three-dimensional image sets acquired by an epifluorescent microscope. Even though it is well known that an experimental PSF is typi...
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The point spread function (PSF) is of central importance in the image restoration of three-dimensional image sets acquired by an epifluorescent microscope. Even though it is well known that an experimental PSF is typically more accurate than a theoretical one, the noise content of the experimental PSF is often an obstacle to its use in deconvolution algorithms. In this paper we apply a recently introduced noise suppression method to achieve an effective noise reduction in experimental PSFs. We show with both simulated and experimental three-dimensional image sets that a PSF that is smoothed with this method leads to a significant improvement in the performance of deconvolution algorithms, such as the regularized least-squares algorithm and the accelerated Richardson-Lucy algorithm.
In irregular pyramids, their vertical structure is not determined beforehand as in regular pyramids. We present three methods, all based on maximal independent sets from graph theory, with the aim to simulate the majo...
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An analytical model for the carrier density at the accumulation layer of TIGBT (Trench Insulated Gate Transistor) is presented in terms of the aspect ratio with the influence of the depth of the trench gate below the ...
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This paper describes the small-signal characterization through delay-time analysis and high-power operation of the K a-band of AlGaN/GaN heterojunction field-effect transistors (FETs). An FET with a gatewidth of 100 ...
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This paper describes the small-signal characterization through delay-time analysis and high-power operation of the K a-band of AlGaN/GaN heterojunction field-effect transistors (FETs). An FET with a gatewidth of 100 μm and a gate length of 0.09 μm has exhibited a current gain cutoff frequency (f T) of 81 GHz, a maximum frequency of oscillation (fmax) of 187 GHz, and a maximum stable gain of 10.5 dB at 30 GHz (8.3 dB at 60 GHz). Delay-time analysis has demonstrated channel elec.ron velocities of 1.50 x 107 to 1.75 x 107 cm/s in a gate-length range of 0.09-0.25 μm. State-of-the-art performance-saturated power of 5.8 W with a linear gain of 9.2 dB and a power-added efficiency of 43.2%-has been achieved at 30 GHz using a single chip having a gatewidth of 1.0 mm and a gate length of 0.25 μm.
We report on optical, photoreflectance and surface photovoltage, as well as terahertz photocurrent investigation of Be-doped GaAs/AlAs multiple quantum wells at room and liquid helium temperatures, respectively. From ...
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We report on optical, photoreflectance and surface photovoltage, as well as terahertz photocurrent investigation of Be-doped GaAs/AlAs multiple quantum wells at room and liquid helium temperatures, respectively. From the Franz-Keldysh oscillations observed in photoreflectance spectra we determine built-in elec.ric fields within the structure. Interband transition energies calculated by the transfer matrix method are in qualitative agreement with experimentally determined values for the samples having various, from 2 × 1010 up to 2.5 × 1012 cm-2, Be doping densities. The photocurrent observed in the range of 5.4-7.3 THz we associate with photoionization of Be-acceptor states.
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