检索结果-内蒙古大学图书馆

您好，读者！请登录

内蒙古大学图书馆

首页
概况
党建
资源
服务
科研支持
- 论文收录引用证明
- 科技查新
知识产权
档案馆
帮助

咨询与建议

建议与咨询留下您的常用邮箱和电话号码，以便我们向您反馈解决方案和替代方法

您的常用邮箱：*

您的手机号码：*

问题描述：

当前已输入0个字，您还可以输入200个字

全部搜索
期刊论文
图书
学位论文
标准
纸本馆藏
外文资源发现
数据库导航
超星发现

高级检索

时间限定

出版年份：

文献类型

图书期刊文献学位论文多媒体

馆藏选择

电子馆藏纸本馆藏

核心期刊

全部期刊 SCI 收录期刊 SSCI 收录期刊 EI 收录期刊 CSCD 收录期刊 CSSCI 收录期刊

语言

中文英文

文献类型

期刊文献图书学位论文标准纸本馆藏

帮助

文字说明：

T=题名（书名、题名），A=作者（责任者），K=主题词，P=出版物名称，PU=出版社名称，O=机构（作者单位、学位授予单位、专利申请人），L=中图分类号，C=学科分类号，U=全部字段，Y=年（出版发行年、学位年度、标准发布年）

检索规则说明：

AND代表“并且”；OR代表“或者”；NOT代表“不包含”；(注意必须大写,运算符两边需空一格)

检索范例：

范例一：(K=图书馆学 OR K=情报学) AND A=范并思 AND Y=1982-2016
范例二：P=计算机应用与软件 AND (U=C++ OR U=Basic) NOT K=Visual AND Y=2011-2016

分类表

所选分类

>> <<

限定检索结果

文献类型

3,188 篇 期刊文献
2,072 篇 会议
14 册 图书

馆藏范围

5,274 篇 电子文献
0 种 纸本馆藏

日期分布

学科分类号

3,338 篇 工学
- 1,371 篇 计算机科学与技术...
- 1,110 篇 软件工程
- 785 篇 电子科学与技术（可...
- 732 篇 电气工程
- 665 篇 信息与通信工程
- 607 篇 控制科学与工程
- 449 篇 光学工程
- 368 篇 生物工程
- 356 篇 生物医学工程（可授...
- 307 篇 材料科学与工程（可...
- 293 篇 化学工程与技术
- 285 篇 机械工程
- 230 篇 仪器科学与技术
- 222 篇 动力工程及工程热...
- 129 篇 力学（可授工学、理...
- 119 篇 交通运输工程
- 107 篇 航空宇航科学与技...
- 104 篇 土木工程
2,511 篇 理学
- 1,205 篇 物理学
- 861 篇 数学
- 454 篇 生物学
- 323 篇 化学
- 297 篇 统计学（可授理学、...
- 265 篇 系统科学
610 篇 管理学
- 413 篇 管理科学与工程(可...
- 183 篇 工商管理
- 176 篇 图书情报与档案管...
391 篇 医学
- 324 篇 临床医学
- 240 篇 基础医学(可授医学...
- 149 篇 药学(可授医学、理...
88 篇 法学
62 篇 经济学
61 篇 农学
45 篇 教育学
19 篇 军事学
14 篇 文学
7 篇 艺术学

主题

77 篇 machine learning
74 篇 deep learning
60 篇 feature extracti...
54 篇 optimization
52 篇 control systems
47 篇 computational mo...
47 篇 accuracy
45 篇 computer science
44 篇 simulation
40 篇 image segmentati...
39 篇 training
38 篇 neural networks
38 篇 predictive model...
38 篇 uncertainty
37 篇 robustness
33 篇 wireless communi...
33 篇 artificial intel...
33 篇 testing
32 篇 magnetic resonan...
32 篇 humans

机构

117 篇 yerevan physics ...
99 篇 department of ph...
99 篇 faculty of scien...
99 篇 departamento de ...
99 篇 department for p...
98 篇 department of ph...
95 篇 dipartimento di ...
93 篇 faculté des scie...
92 篇 kirchhoff-instit...
91 篇 graduate school ...
89 篇 centre de calcul...
88 篇 institute of phy...
87 篇 department of ph...
87 篇 department of ph...
87 篇 department of ph...
86 篇 department of ph...
84 篇 institut für ast...
83 篇 fakultät für phy...
78 篇 institute of phy...
72 篇 department of ph...

作者

87 篇 c. alexa
87 篇 g. bella
87 篇 d. calvet
87 篇 c. amelung
86 篇 j. m. izen
86 篇 s. veneziano
86 篇 j. strandberg
85 篇 f. buehrer
85 篇 a. t. law
85 篇 d. di valentino
85 篇 n. orlando
85 篇 y. tayalati
85 篇 g. spigo
85 篇 v. chiarella
85 篇 f. siegert
85 篇 a. dimitrievska
85 篇 f. deliot
84 篇 c. gumpert
84 篇 h. a. gordon
84 篇 a. c. könig

语言

4,823 篇 英文
336 篇 其他
108 篇 中文
3 篇 德文
2 篇 法文
2 篇 日文
1 篇 朝鲜文

检索条件"机构=School of Electrical Engineering and Computer Science and Automatic Control Research Center"

共 5274 条记录，以下是4501-4510 订阅

全选清除本页清除全部题录导出标记到"检索档案"

详细简洁

排序：

Investigation of self boosting disturbance induced by channel coupling in 3D stacked NAND flash memory

Investigation of self boosting disturbance induced by channe...

引用

International Symposium Semiconductor Device research (ISDRS)

作者： Wandong Kim Yoon Kim Se-Hwan Park Joo Yun Seo Do-Bin Kim Seung-Hyun Kim Byung-Gook Park School of Electrical Engineering and Computer Science Inter-University Semiconductor Research Center (ISRC) Seoul National University Seoul South Korea

As the needs for high density NAND flash memory have been dramatically increasing, the memory density has also increased by scaling down the technology node. As the scaling of NAND flash memory is accelerated, the short channel effect is more severe and further scaling down is faced with process limitations. So, various types of 3D stacked NAND flash memory has been introduced and reported for ultra-high-density data storage and Fig. 1 shows one of the previously reported 3D stacked NAND flash memory structures [1-3]. However, as the distance between layers is reduced, several channel coupling problems are emerging. In this paper, we investigate the self boosting disturbance induced by channel coupling between layers in the 3D stacked NAND flash memory.

关键词： Logic gates Boosting Flash memory Couplings Three dimensional displays Nanostructures Very large scale integration

来源：评论

学校读者我要写书评

暂无评论

A tunneling field-effect transistor using side metal gate/high-k material for low power application

A tunneling field-effect transistor using side metal gate/hi...

引用

International Symposium Semiconductor Device research (ISDRS)

作者： Hyun Woo Kim Jung Han Lee Wandong Kim Min-Chul Sun Jang Hyun Kim Garam Kim Kyung-Wan Kim Hyungjin Kim Joo Yun Seo Byung-Gook Park Inter-University Semiconductor Research Center (ISRC) and School of Electrical Engineering and Computer Science Seoul National University Seoul South Korea

Supply voltage (V DD ) scaling has been an important issue as the CMOS scaling down. Scaling of devices induces large leakage current due to Short Channel Effects (SCEs). Also, Subthrehold Swing (SS) value of CMOS devices is theoretically limited to 60 mV/dec. Various structures have been proposed to overcome power dissipation problems, one of which is the TFETs [1-2]. However, TFET has two critical drawbacks such as low on-current level and ambipolar behaviors. To overcome these disadvantages, TFET using hetero-gate dielectric materials has been lately reported [3]. Although this TFET has low SS and high on-current level, it is difficult to control dielectric alignment between high-k material and SiO 2 in the process. Thus, we introduce an improved TFET in terms of fabrication and performance.

关键词： Logic gates Metals High K dielectric materials Tunneling Threshold voltage Doping

来源：评论

学校读者我要写书评

暂无评论

Investigation of vertical type single-electron transistor with sidewall spacer quantum dot

Investigation of vertical type single-electron transistor wi...

引用

International Symposium Semiconductor Device research (ISDRS)

作者： Kyung-Wan Kim Jung Han Lee Kwon-Chil Kang Hyun Woo Kim Joo Yun Seo Wandong Kim Byung-Gook Park School of Electrical Engineering and Computer Science Inter-University Semiconductor Research Center (ISRC) Seoul National University Seoul South Korea

Modern VLSI technology has been developed with continuous scaling of MOSFET. However, as MOSFET has been scaled down, a lot of critical issues have risen and resulted in a considerable degradation of individual devices [1]. On the other hand, owing to its periodic on/off characteristic, single-electron transistor (SET) attracts attention with its promising performance. But, in general, fabricating SET, silicon-on-insulator (SOI) wafers have been used for their leakage current through buried oxide (BOX) on the substrate region [2]. However, in this paper, we propose a vertical structure that is fabricated on a bare wafer, not on a SOI wafer, and the fabrication process with which small size of a quantum dot (QD) can be formed more easily than previous works [1][3]. Since the smaller QD a SET has, the better operation characteristic it has at room temperature (RT), the characteristic of the SET device can be observed more clearly than previous works with the simple process to downsize a QD.

关键词： Logic gates Capacitance Oscillators Single electron transistors Lithography Physics Fabrication

来源：评论

学校读者我要写书评

暂无评论

Vertical-channel stacked array (VCSTAR) for 3D NAND flash memory

Vertical-channel stacked array (VCSTAR) for 3D NAND flash me...

引用

International Symposium Semiconductor Device research (ISDRS)

作者： Yoon Kim Se Hwan Park Wandong Kim Joo Yon Seo Byung-Gook Park Inter-University Semiconductor Research Center (ISRC) and School of Electrical Engineering and Computer Science Seoul National University Seoul South Korea

Recently, 3D stacked NAND flash architectures have been proposed to solve scaling limit of the planar NAND flash memory based on floating-gate type [1]-[2]. However, theses structures have several drawbacks. For TCAT[1], declined hole-etch slope leads to different curvature radius of each stacked active layers. Consequently, different electric field is applied to each layer in program operation, which causes the threshold voltage distribution problem. In case of VSAT[2], it is almost impossible to implement metal gate structure. Also, VSAT has the limitation of the stacking extendability due to inefficient bit line current flow (going up and down).

关键词： Flash memory Three dimensional displays Logic gates Arrays Doping Stacking

来源：评论

学校读者我要写书评

暂无评论

Formal analysis of fractional order systems in HOL 11

Formal analysis of fractional order systems in HOL

引用

Formal Methods in computer Aided Design (FMCAD)

作者： Umair Siddique Osman Hasan Research Center for Modeling and Simulation National University of Science and Technology Islamabad Pakistan School of Electrical Engineering and Computer Science National University of Science and Technology Islamabad Pakistan

ISBN: (纸本)9780983567813

Fractional order systems, which involve integration and differentiation of non integer order, are increasingly being used in the fields of control systems, robotics, signal processing and circuit theory. Traditionally, the analysis of fractional order systems has been performed using paper-and-pencil based proofs or computer algebra systems. These analysis techniques compromise the accuracy of their results and thus are not recommended to be used for safety-critical fractional order systems. To overcome this limitation, we propose to leverage upon the high expressiveness of higher-order logic to formalize the theory of fractional calculus, which is the foremost mathematical concept in analyzing fractional order systems. This paper provides a higher-order-logic formalization of fractional calculus based on the Riemann-Liouville approach using the HOL theorem prover. To demonstrate the usefulness of the reported formalization, we utilize it to formally analyze some fractional order systems, namely, a fractional electrical component Resistoductance, a fractional integrator and a fractional differentiator circuit.

关键词： Fractional calculus Calculus Analytical models Cognition Linearity Equations

来源：评论

学校读者我要写书评

暂无评论

Voxel based treatment prediction using diffusion anisotropy indices and spatial information in Glioblastoma Multiform tumor

Voxel based treatment prediction using diffusion anisotropy ...

引用

2011 18th Iranian Conference of Biomedical engineering, ICBME 2011

作者： Sabahi, Hadi Soltanian-Zadeh, Hamid Scarpace, Lisa Mikkelsen, Tom Control and Intelligent Processing Center of Excellence School of Electrical and Computer Engineering University of Tehran Tehran 14395-515 Iran Image Analysis Laboratory Radiology Department Henry Ford Hospital Detroit MI 48202 United States Hermelin Brain Tumor Research Center Neurosurgery Department Henry Ford Health System Detroit MI 48202 United States

ISBN: (纸本)9781467310055

In this paper, we propose a method to predict the outcome of Bevacizumab therapy on Glioblastoma Multiform (GBM) tumors. The method uses diffusion anisotropy indices (DAI) and spatial information to predict the treatment response of each tumor voxel. These DAIs are Fractional Anisotropy, Mean Diffusivity, Relative Anisotropy, and Volume Ratio, extracted from Diffusion Tensor Imaging (DTI) data before treatment. The spatial information is considered as the distance of each tumor voxel from the tumor center, extracted from pre-treatment post-contrast T1-weighted Magnetic Resonance Images (pc-T1-MRI). DAIs and spatial information of each tumor voxel are considered as feature vector. DTI and pc-T1-MRI are gathered before and after the treatment of seven GBM patients. First, DAIs of all brain voxels and the distance of each tumor voxel from the tumor center are calculated. Second, the method registers pre-treatment DAI maps and post-treatment pc-T1-MRI to pre-treatment pc-T1-MRI. Next, the tumor is segmented using thresholding technique from pc-T1-MRI. Then, Gd-enhanced voxels of the pre- and post-treatment pc-T1-MRI are compared to label the feature vectors. Three classifiers were evaluated, including Support Vector Machine, K-Nearest Neighbor, and Artificial Neural Network. Classification results show a preference for K-Nearest Neighbor based on well-established performance measures. © 2011 IEEE.

关键词： Tumors

来源：评论

学校读者我要写书评

暂无评论

Home-Based Mobile Cardio-Pulmonary Rehabilitation Consultant System

Home-Based Mobile Cardio-Pulmonary Rehabilitation Consultant...

引用

Annual International Conference of the IEEE engineering in Medicine and Biology Society

作者： Hsu-En Lee Wen-Chih Wang Shao-Wei Lu Bo-Yuan Wu Li-Wei Ko Department of Computer Science and Brain Research Center National Chiao Tung University Institute of electrical Control Engineering and Brain Research Center National Chiao Tung University Brain Research Center and Department of Biological Science and Technology National Chiao Tung University

ISBN: (纸本)9781424441211

Cardiovascular diseases are the most popular cause of death in the world recently. For postoperatives, cardiac rehabilitation is still asked to maintain at home (phase II) to improve cardiac function. However, only one third of outpatients do the exercise regularly, reflecting the difficulty for home-based healthcare: lacking of monitoring and motivation. Hence, a cardio-pulmonary rehabilitation system was proposed in this research to improve rehabilitation efficiency for better prognosis. The proposed system was built on mobile phone and receiving electrocardiograph (ECG) signal from a wireless ECG holter via Bluetooth connection. Apart from heart rate (HR) monitor, an ECG derived respiration (EDR) technique is also included to provide respiration rate (RR). Both HR and RR are the most important vital signs during exercise but only used one physiological signal recorder in this system. In clinical test, there were 15 subjects affording Bruce Task (treadmill) to simulate rehabilitation procedure. Correlation between this system and commercial product (Custo-Med) was up to 98% in HR and 81% in RR. Considering the prevention of sudden heart attack, an arrhythmia detection expert system and healthcare server at the backend were also integrated to this system for comprehensive cardio-pulmonary monitoring whenever and wherever doing the exercise.

关键词： Electrocardiography Heart Rate electrochemical grinding Exercise Clinical Trial Rehabilitation Lake Restoration Mobile phones Cardiovascular Diseases Outpatients Cause of Death Consultant Vital Signs

来源：评论

学校读者我要写书评

暂无评论

automatic Identification of Overlapping/Touching Chromosomes in Microscopic Images Using Morphological Operators

Automatic Identification of Overlapping/Touching Chromosomes...

引用

Iranian Machine Vision and Image Processing (MVIP)

作者： Sahar Jahani S. Kamaledin Setarehdan Emadedin Fatemizadeh Faculty of Biomedical Engineering Science and Research Branch Azad University Tehran Iran Control and Intelligent Processing Centre of Excellence School of Electrical and Computer Engineering Faculty of Engineering University of Tehran Tehran Iran School of Electrical Engineering Sharif University of Technology Iran

Karyotyping, is the process of classification of human chromosomes within the microscopic images. This is a common task for diagnosing many genetic disorders and abnormalities. automatic Karyotyping algorithms usually suffer the poor quality of the images due to the non rigid nature of the chromosomes which makes them to have unpredictable shapes and sizes in various images. One of the main problems that usually need operator's interaction is the identification and separation of the overlapping/touching chromosomes. This paper presents an effective algorithm for identification of any cluster of the overlapping/touching chromosomes together with the number of chromosomes in the cluster, which is a very first step towards the development of a fully automatic Karyotyping system. The proposed algorithm which is based on the extraction of the number of endpoints within the skeleton of the image objects uses morphological operators. Two independent datasets obtained from the Tesi-Imaging srl in Milan, Italy and the Imam Hospital in Tehran, Iran was used to evaluate the performance of the algorithm. An accuracy of %96 and %99 were obtained on identification of the clusters of overlapping/touching chromosomes and single chromosomes respectively by the proposed algorithm.

关键词： Biological cells Clustering algorithms Skeleton Object recognition Microscopy Humans Educational institutions

来源：评论

学校读者我要写书评

暂无评论

Silicon-compatible bulk-type compound junctionless field-effect transistor

Silicon-compatible bulk-type compound junctionless field-eff...

引用

International Symposium Semiconductor Device research (ISDRS)

作者： Seongjae Cho Se Hwan Park Byung-Gook Park James S. Harris Department of Electrical Engineering University of Stanford CA USA School of Electrical Engineering and Computer Science Inter-university Semiconductor Research Center (ISRC) Seoul National University Seoul South Korea

Junctionless field-effect transistor (JLFET) is an attractive electronic device due to its simpler process architecture without concerning about thermal budgets in forming source and drain (S/D) junctions. JLFETs with silicon (Si) channel have been explored in many aspects [1-2], but they are not cost-effective since they need expensive silicon-on-insulator (SOI) substrate for electrical isolation of a device. In this work, a Si-compatible bulk-type compound JLFET is introduced and characterized by two-dimensional (2D) simulation [3]. Compound JLFET can be used as a core element in the driving circuits for integrated biosensors and photonic systems based on the compound semiconductors. Fig. 1(a) and (b) compare the material compositions of the conventional and the proposed JLFETs. The channel material is n + gallium arsenide (GaAs) grown on Si substrate with a thick enough buffer layer of p + germanium (Ge) for an n-type FET. The GaAs channel is epitaxially grown on Ge buffer layer with little lattice mismatch (Fig. 2). Also, GaAs and Ge have a large energy bandgap offset, which enables a self-isolation by effectively blocking leakage paths between the channel and substrate at any operation conditions. The simulated energy band diagrams with inserted schematics under various conditions are shown in Fig. 3(a) through (d). This genuine feature of self-isolation gets the device evolved into a vertical structure (which is suitable for surrounding gate) with one of the GaAs S/D junctions grown on Ge buffer. The gate oxide thickness (T ox ), physical gate length (L G ), and channel thickness (T ch ) of the simulated device in Fig. 3 were 1 nm, 40 nm, and 20 nm, respectively. The buffer layer and channel doping concentrations (N BF , N ch ) were N BF = 3×10 17 cm -3 and N ch = 1×10 18 cm -3 . A metal gate with workfunction of 4.33 eV was used throughout the works. It is confirmed that leakages by band-to-band tunneling of Ge valence electrons with a high drain volta

关键词： Gallium arsenide Performance evaluation Silicon Logic gates Educational institutions Buffer layers

来源：评论

学校读者我要写书评

暂无评论

Two-dimensional dopant profiling in POCl3-diffused n+ emitter of textured silicon solar cells

Two-dimensional dopant profiling in POCl3-diffused n+ emitte...

引用

37th IEEE Photovoltaic Specialists Conference, PVSC 2011

作者： Choi, Chel-Jong Kim, Jin-Sung Moon, Kyungwon Kil, Yeon-Ho Ok, Young-Woo Rohatgi, Ajeet Park, Sung-Eun Kim, Dong-Hwan Department of BIN Fusion Technology Chonbuk National University Jeonju 561-756 Korea Republic of School of Semiconductor and Chemical Engineering Semiconductor Physics Research Center Chonbuk National University Jeonju 561-756 Korea Republic of School of Electrical and Computer Engineering Georgia Institute of Technology Atlanta GA 30332 United States Department of Materials Science and Engineering Korea University Seoul 136-713 Korea Republic of

ISBN: (纸本)9781424499656

We investigated two-dimensional dopant distribution in POCl 3-diffused n+ emitter formed on textured Si solar cells using transmission electron microscopy (TEM) combined with selective chemical etching. TEM and simulation results demonstrate that convex and concave regions of a pyramid in the textured Si surface show deeper and shallower junctions, respectively. By considering a strong dependency of phosphorus (P) diffusion on the Si interstitials, the abnormal profile of n+ emitter in the textured Si surface could be attributed to the inhomogeneous distribution of Si interstitials caused by the geometry of the pyramid texture. © 2011 IEEE.

关键词： Silicon solar cells

来源：评论

学校读者我要写书评

暂无评论

没有更多数据了...

全选清除本页清除全部题录导出标记到“检索档案”

共500页 << < 447 448 449 450 451 452 453 454 455 456 > >>

检索报告对象比较合并检索0

隐藏清空

合并搜索

回到顶部

执行限定条件

内容：

评分：

请选择保存的检索档案：

请选择收藏分类：

订阅名称：

通借通还

温馨提示：

图书名称：

借书校区：

取书校区：

手机号码：

邮箱地址：

一卡通帐号：

电话和邮箱必须正确填写，我们会与您联系确认。

联系人：

所在院系：

联系邮箱：

联系电话：

内蒙古自治区呼和浩特市赛罕区大学西街235号邮编: 010021

建议与咨询 留下您的常用邮箱和电话号码，以便我们向您反馈解决方案和替代方法

时间限定

文献类型

馆藏选择

核心期刊

语言

文献类型

帮助

文字说明：

检索规则说明：

检索范例：

分类表

所选分类

限定检索结果

文献类型

馆藏范围

日期分布

学科分类号

主题

机构

作者

语言

请选择保存的检索档案： 新增检索档案 确定 取消

请选择收藏分类： 新增自定义分类 确定 取消

通借通还

建议与咨询留下您的常用邮箱和电话号码，以便我们向您反馈解决方案和替代方法

请选择保存的检索档案：

请选择收藏分类：