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Effect of preheating and annealing temperature on the microstructure and optoelectronic properties of CZTS films prepared by sol-gel method

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Optoelectronics Letters 2023年第7期19卷 410-415页

作者： HU Zhaoshuo XUE Yuming DAI Hongli WANG Luoxin ZHANG Jiuchao WANG Jiangchao Institute of New Energy Intelligence Equipment School of Integrated Circuit Science and EngineeringTianjin Universityof TechnologyTianjin 300384China

The effects of different preheating and annealing temperatures on the surface morphology,microstructure,and optical properties of Cu_(2)ZnSnS_(4)(CZTS) thin films are investigated by controlling the preheating and annealing *** prepared thin films were characterized using X-ray diffraction(XRD),Raman spectroscopy,scanning electron microscopy(SEM),and ultra-violet-visible(UV-Vis) spectroscopy *** and Raman spectroscopy showed that a Kesterite structure with a selective orientation along the(112) peak was generated,and the thin films produced at a preheating temperature of 300℃ and annealing temperature of 570℃ had fewer secondary phases,which was beneficial for improving the performance of the solar *** confirms that the crystallite size increases and then decreases as the temperature increases,and the largest and most uniform crystallite size with the smoothest surface is generated at the above preheating and annealing ***-Vis measurements show that the thin films generated at the above temperature have the lowest transmittance and the lowest optical band gap value of 1.46 e V,which is close to the optimal band gap value for solar cells and is suitable as an absorber layer material.

关键词： annealing microstructure films

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A New Piecewise-Compensated Bandgap Reference circuit with a Trimming Procedure 7

A New Piecewise-Compensated Bandgap Reference Circuit with a...

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2022 7th International Seminar on Computer Technology, Mechanical and Electrical engineering, ISCME 2022

作者： Wei, H.Y. Duan, Q.Z. School of Integrated Circuit Science and Engineering Tianjin University of Technology China

A new CMOS bandgap reference (BGR) circuit with a piecewise-compensation circuit and a trimming network is proposed and designed to obtain a bandgap reference voltage with a low-temperature coefficient and a high precision, taking into account the effect of non-ideal factors on the results. The proposed piecewise compensation circuit is designed to achieve a constant reference voltage by using a current mirror to mirror the current, combined with a subtractive circuit and an additive circuit to obtain a low-temperature coefficient over an extensive temperature range. The trim network part is used to change the voltage value of the output reference by controlling the magnitude of the resistance value of the resistors connected to the circuit. The design and simulation of the proposed bandgap reference circuit are obtained by using Cadence Spectre simulation by SMIC 0.18 μm CMOS technology. The results indicates that when the power is 3.3 V and the temperature scope is within -40 °C to 125 °C, the output voltage is 1.2 V with the temperature coefficient equal to 0.658 ppm/°C. When the power varies within 3.2 V to 3.4 V, the linear regulating rate is 0.001019 %/V. © Published under licence by IOP Publishing Ltd.

关键词： Mirrors

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Design of analog front-end readout circuit for capacitive silicon micro gyroscope 7

Design of analog front-end readout circuit for capacitive si...

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2022 7th International Seminar on Computer Technology, Mechanical and Electrical engineering, ISCME 2022

作者： Zhou, Xiangqi Duan, Quanzhen School of Integrated Circuit Science and Engineering Tianjin University of Technology China

To design a high-performance analog front-end readout circuit for capacitive silicon micromachined gyroscope, this paper presents electrical modeling of the silicon micromachined gyroscope according to its working characteristics, proposes to construct the amplitude and frequency range of the silicon micromachined gyroscope signal in the form of a capacitor array, and designs the capacitance readout circuit of the gyroscope based on this model. Based on the SMIC 0.18 um CMOS process, the electrical model and its capacitance readout circuit are designed and simulated in this paper. The results indicate that the capacitance readout circuit can accurately detect the equivalent variable capacitance signal of the gyroscope electrical model and transform it linearly into a voltage signal. The equivalent output noise of the overall analog front-end readout circuit is 80.11 nV/Hz@6.4kHZ. The system resolution can reach 0.29 aF. As a result, the silicon micro gyroscope analog front-end circuit has a wide range of capacitive applications, high linearity, low noise, and broad market and application prospects. Hence, this topic is of great scientific significance. © Published under licence by IOP Publishing Ltd.

关键词： Silicon

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Exploring Polarizing Political Discourse Among *** Members with Large Language Models

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Journal of Systems science and Information 2025年第1期13卷 102-115页

作者： Cheng FU Zili HUANG Xiaoqiang CAI School of Integrated Circuit Science and Engineering University of Electronic Science and Technology of ChinaChengdu 611731China School of Science and Engineering The Chinese University of Hong KongShenzhen 518172China School of Data Science The Chinese University of Hong KongShenzhen 518172China

In July 2024,a shooting incident involving President Trump drew widespread public attention,highlighting the need for a deeper understanding of political rhetoric among *** *** study analyzes discourse patterns on Twitter using large language models(LLMs),specifically ChatGPT and bidirectional encoder representations from transformers(BERT),to explore underlying factors that may contribute to polarizing political *** collecting and preprocessing Twitter data,we initially labeled 20,000 tweets using ChatGPT and then utilized the BERT-large model to classify the remaining 980,000 *** analysis identified party affiliation and geographic region as significant factors influencing political *** lawmakers exhibited a higher prevalence of polarizing language,while New Jersey recorded the highest rate among the *** elected Congressional members also tended to adopt more provocative language,potentially as a strategy to engage with their voter base or distinguish themselves in a competitive political *** analysis revealed spikes in polarizing rhetoric corresponding to events such as discussions on the new fiscal year *** study offers insights into the dynamics of political discourse,providing a foundation for promoting constructive dialogue and fostering institutional resilience.

关键词： U.S.Congressional members polarizing discourses Twitter large language models

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Research of Continuous Delta-Sigma Analog-to-Digital Converter for Bio-Electricity Signal Acquisition 7

Research of Continuous Delta-Sigma Analog-to-Digital Convert...

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2022 7th International Seminar on Computer Technology, Mechanical and Electrical engineering, ISCME 2022

作者： Li, L.W. Sun, J. School of Integrated Circuit Science and Engineering Tianjin University of Technology China

In this paper, a continuous delta-sigma analog-to-digital converter with a low power, single-ring, third-order mixed integrator for bio-electricity signal acquisition is proposed. For the trade-off between low power consumption and high resolution, the Active-RC integrator is used in the first-order of the third-order feedforward modulator and the Gm-C integrator with improved linearity is adopted for the second and third order integrators. Because of the infinite resistance provided by the Gm-C integrator, the first-order integrator can replace the traditional second-order operational transconductance amplifier (OTA) with a single-stage OTA operating in the weak invert region to achieve low power consumption and ensure the output swing of the first-order integrator. The structure of cascade-of-integrators with feedforward (CIFF) can scale the output voltage values of three integrators and reduce the requirement of linearity of the Gm-C integrator, to reduce the design difficulty of the Gm-C integrator. In addition, the linearity of the second and third-order Gm-C integrator is improved by using the auxiliary difference pair OTA with source-level negative feedback. Therefore, the matching between the circuit structure and the model coefficients is improved significantly. © Published under licence by IOP Publishing Ltd.

关键词： Operational amplifiers

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HyIMC: Analog-Digital Hybrid In-Memory Computing SoC for High-Quality Low-Latency Speech Enhancement

HyIMC: Analog-Digital Hybrid In-Memory Computing SoC for Hig...

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2025 Design, Automation and Test in Europe Conference, DATE 2025

作者： Mao, Wanru Liu, Hanjie Wang, Guangyao Bai, Tianshuo Gu, Jingcheng Zhang, Han Yang, Xitong Zhang, Aifei Wei, Xiaohang Wang, Meng Kang, Wang School of Integrated Circuit Science and Engineering Beihang University Beijing China Zhicun Research Lab Beijing China

ISBN: (纸本)9783982674100

In-memory computing (IMC) holds significant promise for accelerating deep learning-based speech enhancement (DL-SE). However, existing IMC architectures face challenges in simultaneously achieving high precision, energy efficiency, and the necessary parallelism for DL-SE's inherent temporal dependencies. This paper introduces HyIMC, a novel hybrid analog-digital IMC architecture designed to address these limitations. HyIMC features: 1) a hybrid analog-digital design optimized for DL-SE algorithms;2) a schedule controller that efficiently manages recurrent dataflow within skip connections;and 3) non-key dimension shrinkage, a model compression technique that preserves accuracy. Implemented on a 40nm eFlash-based IMC SoC prototype, HyIMC achieves 160 TOPS/W energy efficiency, compresses the DL-SE model size by 600%, improves the feature of merit by 1200%, and enhances perceptual evaluation of speech quality by 120%. © 2025 EDAA.

关键词： Speech enhancement

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Effects of ammonia concentration on morphology, composition and optical properties of ZnO_(1-x)S_(x) thin films of Cu(In, Ga)Se_(2) solar cells

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Optoelectronics Letters 2022年第4期18卷 215-221页

作者： WANG Lang XUE Yuming WANG Zhiyong GUO Qing School of Integrated Circuit Science and Engineering Tianjin University of TechnologyTianjin 300384China

ZnO_(1-x)S_(x) films were prepared by chemical bath deposition(CBD)on glass *** effects of ammonia concentration on the structure characteristics of ZnO_(1-x)S_(x) films were *** results of scanning electron microscope(SEM)show that the film has good density when the concentration of ammonia is 0.4 *** more S2-ions are involved in the reaction and less precipitates are generated,the film is relatively *** distribution of the film element shows that the growth rate of the film first accelerates and then slows down as the concentration of ammonia increases.X-ray diffraction(XRD)study shows that the diffraction peak is obvious when the ammonia concentration is 0.4 M,and the crystallinity of the film is ***(UV)spectrophotometer test results show that the ratio of S content(x)and optical band gap(E_(g))satisfies E_(g)(x)=3.3257x^(2)-2.7187x+*** S content can increase the optical band gap of the film,and increasing ammonia concentration can improve the absorbance of the film,but both have good *** the ammonia concentration of 0.4 M,the absorbance of the film is good in the wavelength range of 300—900 nm,the transmission rate reaches 80%,and the band gap is 3.75 e V,which is suitable for the buffer layer of solar cells.

关键词： ammonia film concentration

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Simulation of BTI for GAA MOSFETs with Enhanced Parameters Extraction 17

Simulation of BTI for GAA MOSFETs with Enhanced Parameters E...

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17th IEEE International Conference on Solid-State and integrated circuit Technology, ICSICT 2024

作者： Wang, Yongjia Wang, Yijiao Wang, Shuhan Xu, Jinghan Liu, Xiaoyan School of Integrated Circuits Peking University Beijing100871 China School of Integrated Circuit Science and Engineering Beihang University Beijing100191 China

ISBN: (纸本)9798350361834

In this work, we present an enhanced parameters extraction method for simulating BTI degradation in GAA MOSFETs. Utilizing a comprehensive simulation framework based on 3D device simulations, we accurately model BTI degradation at the 5nm technology node. The proposed method involves generating defect weights maps and employing a trained deep learning network to extract the parameters of the two-state NMP model. The parameters extraction process completes within a minute and achieves a mean relative error of 6.29% compared to experimental data. © 2024 IEEE.

关键词： III-V semiconductors

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An Analytical Model of Terahertz Responsivity for Double-Gate MOSFET Detector with Consideration of Short Channel Effects

An Analytical Model of Terahertz Responsivity for Double-Gat...

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7th International Conference on Electronics Technology, ICET 2024

作者： Cao, Junyi Xie, Qian Wang, Jiaming Wang, Zheng University of electronic science and techonology of china School of integrated circuit science and engineering Chengdu China

ISBN: (纸本)9798350363951

In this work, a non-resonant plasma terahertz detector Photoresponse (PR) model for double-gate (DG) MOSFET is proposed. The model can accurately predict PR curve with the consideration of the short channel effects. We introduce a physical term which stands for the response of the voltage amplitude along the channel when external terahertz signal is applied, and its variation can illustrate the effects of the short channel effect on the detector responsivity. The model is validated with electronic potential and PR data obtained by TCAD simulation with different gate voltages, and gate lengths, confirming its accuracy and reliability. This model serves as a valuable tool for guiding improvements in PR and understanding the effects that impact the performance of terahertz detectors in practical device design. © 2024 IEEE.

关键词： Terahertz wave detectors

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An Automatic Design Framework for On-Chip Terahertz Passive Devices 15

An Automatic Design Framework for On-Chip Terahertz Passive ...

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15th International Conference on Microwave and Millimeter Wave Technology, ICMMT 2023

作者： Wang, Kailei Yang, Maoxuan Xie, Qian Wang, Zheng University of Electronic Science and Technology of China School of Integrated Circuit Science and Engineering China

ISBN: (纸本)9798350338874

A new automatic design framework for on-chip passive devices working in terahertz is presented, which has three sections: optimization engine, black box model and schematic circuit simulation. The optimization engine generates optimization variables and the black box model generates layout and gets its S-parameter. Then, the schematic circuit simulator will generate the optimization target value and send it to optimization engine for next optimization circulation. A hairpin filter in 130nm SiGe is designed using this framework, with a working frequency of 262GHz and a bandwidth of 36GHz. Its S11 is less than -15.3dB and the S21 is more than -4.5dB in the bandwidth, thereby validating the efficacy of the proposed design framework. © 2023 IEEE.

关键词： Multiobjective optimization

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