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Molten salt synthesis of porous carbon and its application in supercapacitors: A review

Journal of Energy Chemistry 2021年第10期30卷 622-640,I0016页

作者： Zhongya Pang Guangshi Li Xiaolu Xiong Li Ji Qian Xu Xingli Zou Xionggang Lu State Key Laboratory of Advanced Special Steel&Shanghai Key Laboratory of Advanced Ferrometallurgy&School of Materials Science and Engineering Shanghai University99#Shangda RoadShanghai 200444China State Key Laboratory of ASIC and System School of MicroelectronicsFudan University825#Zhangheng RoadShanghai 200433China

Carbon materials have taken an important role in supercapacitor applications due to their outstanding features of large surface area,low price,and stable physicochemical *** research efforts have been devoted to the development of novel synthesis strategy for the preparation of porous carbon materials in recent *** particular,molten salt strategy represents an emerging and promising method,whereby it has shown great potential in achieving tailored production of porous *** has been proved that the molten salt-assisted production of carbon via the direct carbonization of carbonaceous precursors is an effective ***,with the incorporation of electrochemical technology,molten salt synthesis of porous carbon has become flexible and ***,this review focuses on the mainstream molten salt synthesis strategies for the production of porous carbon materials,which includes direct molten salt carbonization process,capture and electrochemical conversion of CO_(2)to value-added carbon,electrochemical exfoliation of graphite to graphene-based materials,and electrochemical etching of carbides to new-type carbide-derived carbon *** reaction mechanisms and recent advances for these strategies are reviewed and discussed *** morphological and structural properties and capacitive performances of the obtained carbon materials are summarized to reveal their appealing points for supercapacitor ***,the opportunities and challenges of the molten salt synthesis strategy for the preparation of carbon materials are also discussed in this review to provide inspiration to the future researches.

关键词： Molten salt synthesis Porous carbon CO_(2)conversion Graphene Carbide-derived carbon

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Floating-gate photosensitive synaptic transistors with tunable functions for neuromorphic computing

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Science China Materials 2021年第5期64卷 1219-1229页

作者： Lingkai Li Xiao-Lin Wang Junxiang Pei Wen-Jun Liu Xiaohan Wu David Wei Zhang Shi-Jin Ding State Key Laboratory of ASIC and System School of MicroelectronicsFudan UniversityShanghai 200433China

Synaptic devices that merge memory and processing functions into one unit have broad application potentials in neuromorphic computing, soft robots, and humanmachine interfaces. However, most previously reported synaptic devices exhibit fixed performance once been fabricated,which limits their application in diverse scenarios. Here, we report floating-gate photosensitive synaptic transistors with charge-trapping perovskite quantum dots(PQDs) and atomic layer deposited(ALD) Al_(2)O_(3) tunneling layers, which exhibit typical synaptic behaviors including excitatory postsynaptic current(EPSC), pair-pulse facilitation and dynamic filtering characteristics under both electrical or optical signal stimulation. Further, the combination of the high-quality Al2O3 tuning layer and highly photosensitive PQDs charge-trapping layer provides the devices with extensively tunable synaptic performance under optical and electrical co-modulation. Applying light during electrical modulation can significantly improve both the synaptic weight changes and the nonlinearity of weight updates, while the memory effect under light modulation can be obviously adjusted by the gate *** pattern learning and forgetting processes for "0" and "1"with different synaptic weights and memory times are further demonstrated in the device array. Overall, this work provides synaptic devices with tunable functions for building complex and robust artificial neural networks.

关键词： synaptic device floating-gate transistor perovskite quantum dot tunable synaptic function optical and electrical comodulation

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A 400-MS/s 12-bit Voltage-Time Hybrid ADC with a Ping-Pong SAR TDC for Speed Enhancement

A 400-MS/s 12-bit Voltage-Time Hybrid ADC with a Ping-Pong S...

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IEEE International Symposium on Circuits and systems (ISCAS)

作者： Yutong Zhao Yuguo Xiang Fan Ye Junyan Ren Department of Microelectronics State Key Laboratory of ASIC and System Fudan University Shanghai China

This paper presents a 400-MS/s 12-bit voltage-time hybrid pipeline ADC in a 28 nm CMOS process. The first stage is an asynchronous SAR ADC resolving 6 bits, and the second stage is a time-domain ADC composed of a VTC and a 7-bit SAR TDC (with 1-bit redundancy). To speed up the time domain operation, a ping-pong switching technique is used in the second stage. Besides, a common mode VTC is adopted to improve the linearity during the voltage-to-time conversion. A non-binary SAR TDC is also designed to tolerate the MSBs decision errors in the time-domain quantization. Furthermore, a LMS-based background calibration is performed to correct the capacitor mismatch error, interstage gain error, and bit-weight in the SAR TDC. The simulation results show that this design achieves a SNDR of 63.3 dB and a SFDR of 79.1 dB at Nyquist input. The power consumption is 9.6 mW with a supply of 0.9V, showing a FoM of 20.1 fJ/conversion-step.

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A Wide Beamwidth Horn Antenna for Automotive Millimeter-Wave Radar

A Wide Beamwidth Horn Antenna for Automotive Millimeter-Wave...

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International Conference on Microwave and Millimeter Wave Technology Proceedings

作者： Bingtao Yang Xiaocha Liu Chuang Chen Weiran Li Yaobang Yang Na Yan Guo-Min Yang Key Laboratory for Information Science of Electromagnetic Waves (MoE) Fudan University Shanghai China State Key Laboratory of ASIC and System School of Microelectronics Fudan University Shanghai China

ISBN: (数字)9798350389968

ISBN: (纸本)9798350389975

A horn antenna for 4D automotive millimeter-wave radar is presented in this paper. The bandwidth of the horn antenna covers the frequency range used in automotive millimeter-wave radar, from 76 GHz to 81 GHz. The horn antenna has a wide azimuthal beamwidth (E-plane) and a narrow elevation beamwidth (H -plane). In comparison to currently employed 4D millimeter-wave radar antennas, this horn antenna exhibits smaller dimensions, a simpler structure., and is more easily to manufacturing. Specifically designed for direct injection molding on a single-layer board., it significantly reduces the costs of 4D millimeter-wave radar manufacturing. The proposed antenna was tested., and the results indicate the rationality of the horn antenna.

关键词： Microwave antennas Antenna measurements Costs Horn antennas Simulation Millimeter wave radar Injection molding

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SS-DGD: Scalable Short-Entry Dual-Grain Coherence Directoris 16

SS-DGD: Scalable Short-Entry Dual-Grain Coherence Directoris

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16th IEEE International Conference on Solid-state and Integrated Circuit Technology, ICSICT 2022

作者： Tang, Yuxin Qiu, Yudi Liu, Yanwei Jiao, Jie Zhang, Peng Fan, Yibo Fudan University State Key Laboratory of Asic and System Department of Microelectronics Shanghai China Peking University Advanced Institute of Information Technology Beijing China

ISBN: (数字)9781665469067

ISBN: (纸本)9781665469067

As the number of cores in a chip multiprocessor increase, the directory area overhead becomes excessive. Current research shows that directory area can be reduced by tracking private entries with coarse-grain region entries. The insight is that contiguous memory blocks are often accessed by a single core. In order to indicate which blocks the region owner has cached, a bit vector format is applied in the dual-grain directory (DGD). However, this limits scalability and is incompatible with the latest scalable directories. In this paper, we propose a scalable short-entry dual-grain coherence directory (SS-DGD). In private region entries, a counter is used instead of the original bit vector. To reduce the directory area, we use a separate short-entry directory to store private block entries with a pointer format and region entries with counters. The detailed simulation-based study in 64-core CMPs shows that our proposal can reduce the area overhead by 29.9% compared with DGD. © 2022 IEEE.

关键词： Computer architecture

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Photonics-assisted intensity-modulation and direct-detection MIMO millimeter-wave system in the D-band

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Chinese Optics Letters 2025年第1期23卷 7-12页

作者： Jingwen Tan Peng Tian Jianjun Yu Xianming Zhao Xinglin Dou Long Zhang Xiongwei Yang YangHan Yi Wei Bing Zhang Qinyi Zhang Luhan Jiang Weiping Li Rahim Uddin Kaihui Wang Wen Zhou State Key Laboratory of ASIC and System Key Laboratory for Information Science of Electromagnetic Waves(MoE)School of Information Science and TechnologyFudan UniversityShanghai 200433China Beijing Hongshan Information Technology Research Institute Co. Ltd.Beijing 100176China

We experimentally demonstrate the transmission of discrete multi-tone(DMT)millimeter-wave(mm-wave)signals over a 1.2-km distance at the D-band(110–170 GHz)in a cost-effective intensity-modulation and direct-detection(IM/DD)communication *** the experiment,we successfully achieve the transmission of DMT-QPSK and DMT-16QAM mm-wave signals over multiple-input multiple-output(MIMO)*** the 1.2-km free-space transmission,the bit error rate(BER)of the DMT-16QAM is below the 25%soft decision forward error correction(25%SD-FEC)threshold of 4×10-2,with a maximum net bit rate of 24.62 Gbit/s achieved in this system.

关键词： D-band discrete multi-tone intensity modulation and direct detection long-distance wireless transmission photonics-assisted technique

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Mechanical and tribological performance of CoCrNiHf_(x)eutectic medium-entropy alloys

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Journal of Materials Science & Technology 2021年第31期90卷 194-204页

作者： Yin Du Xuhui Pei Zhaowu Tang Fan Zhang Qing Zhou Haifeng Wang Weimin Liu State Key Laboratory of Solidiﬁcation Processing Center of Advanced Lubrication and Seal MaterialsNorthwestern Polytechnical UniversityXi’an 710072China State Key Laboratory of Solid Lubrication Lanzhou Institute of Chemical PhysicsChinese Academy of SciencesLanzhou 730000China State Key Laboratory of ASIC and System School of MicroelectronicsFudan UniversityShanghai 200433China

The excellent properties of the multi-principal element alloys(e.g.,the CoCrNi medium-entropy alloy)make them a perfect candidate for structure *** low strength and poor wear-resistance,however,limit considerably their *** this study,a lamellar eutectic microstructure was introduced by addition of Hf into CoCrNi alloy to produce a series of CoCrNiHf_(x)(x=0.1,0.2,0.3 and 0.4)eutectic medium-entropy alloys.A homogeneous eutectic microstructure with an alternate array of the soft FCC solid-solution phase and the hard Laves phase was identified for the as-cast CoCrNiHf_(0.3)*** an investigation of the microstructure,mechanical and tribological properties,it was found that the hardness(plasticity)increases(decreases)with the increasing volume fraction of the Laves phase and the CoCrNiHf_(0.3)eutectic alloy exhibits both good plasticity and high *** wear behavior is strongly dependent on the applied normal *** a low normal load,its tribological behavior follows the Archard's equation and a higher hardness due to Hf addition can resist plastic deformation and abrasive *** the normal load is high enough,the hypoeutectic or hypereutectic alloy,which possessing either high strength or good ductility but not at the same time,exhibit a poor wear *** comparison,the full eutectic CoCrNiHf_(0.3)alloy with a superior combination of strength and toughness shows the best wear performance,as it can significantly reduce fracture during wear.

关键词： Medium-entropy alloy Lamellar eutectics Hardness Plasticity Wear-resistance

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Comparision between the Solid state Reaction of Ultrathin Ni and Ni/Ti with Si Nanowire on Soi Substrate

SSRN

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SSRN 2023年

作者： Gu, Sijie Shu, Gangqiang Hu, Chunfeng Qu, Xinping State Key Laboratory of ASIC and System School of Microelectronics Fudan University 220 Handan Road Shanghai200433 China

The morphology and phase transformation of nickel silicide nanowires with and without a titanium interlayer have been studied. 1 nm Ti film is sputtered as a metallic interlayer onto Si nanowires, then 10 nm Ni film is sputtered to form nickel silicide nanowires by rapid thermal annealing at 500℃ in N2 ambient. Nickel silicide nanowires without Ti interlayers tend to form Ni-rich phases, while the presence of a Ti layer reduces the nickel content in nickel silicide nanowires. Ni is excess in the whole nanowires with narrow line width, leading to the formation of silicide phases with a lower Ni ratio. The titanium interlayer acts as a diffusion barrier for Ni atoms and retards the Ni silicidation rate, causing a smoother interface between the nickel silicide nanowire and the silicon substrate. © 2023, The Authors. All rights reserved.

关键词： Nanowires

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Millimeter-Wave AlGaN/GaN HEMTs on Si Operated at 12V and its modeling for 5G Handset Applications

Millimeter-Wave AlGaN/GaN HEMTs on Si Operated at 12V and it...

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2023 Cross Strait Radio Science and Wireless Technology Conference, CSRSWTC 2023

作者： Wei, Zhen-Tao Liu, Dong-Sheng Huang, Wei Zhang, David Wei Li, Liang Ma, Hong-Ping Shanghai Institute of Intelligent Electronics & Systems School of Microelectronics State Key Laboratory of ASIC and System Fudan University Shanghai200433 China School of Electronic Information Engineering Suzhou Vocational University Suzhou215104 China Fudan Univ Acad Engn & Technol Shanghai200433 China

ISBN: (纸本)9798350358971

In this paper, a RF AlGaN/GaN high electron mobility transistor (HEMT) based on low voltage application of 5G RF handset, firstly fabricated on high-resistive silicon substrate is introduced, which uses Ni/Au as T-shaped gate structure and double-layer silicide as surface medium. The maximum output current density of the device is 1.07 A/mm at Vds = 12 V and Vgs = 2 V. fT = 27.8 GHz and BV (the breakdown voltage) = 35 V/μm are obtained for the 180-nm gate-length device with 1-μm source-to-gate spacing. © 2023 IEEE.

关键词： 5G RF handset AlGaN/GaN HEMT high-resistive silicon substrate

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The Design of a 57-65GHz SPDT Switch with LC Resonant Techniques in 40 nm CMOS Process 9

The Design of a 57-65GHz SPDT Switch with LC Resonant Techni...

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9th IEEE MTT-S International Wireless Symposium, IWS 2022

作者： Sun, An Gu, Junjie Xu, Hao Liu, Weitian Han, Tingting Tian, Mi Zhu, Weiqiang Yan, Na Fudan University State Key Laboratory of Asic & System China Archiwave Microelectronics Co. Ltd. China Nanjing Electronic Equipment Institute China

ISBN: (数字)9781665481977

ISBN: (纸本)9781665481977

This paper presents a single-pole double-throw (SPDT), transmit/receive (T/R) switch operating from 57 to 65GHz in 40 nm CMOS process. The SPDT is based on series-shunt transistors circuit with input and output matching networks. By using LC resonant techniques, the isolation of the switch in mil-limeter wave band can be improved by selecting appropriate res-onant inductors. The SPDT switch results in simulated insertion loss of 2.7dB at 60GHz and isolation is better than 28dB from 57 to 65GHz with return loss less than -13dB. With a control voltage of 1.2 V, the IP1dB of the switch is 12.7dBm at 60GHz. The core area size of switch is 0.178 times 0.117 mm2. © 2022 IEEE.

关键词： CMOS integrated circuits

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