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43rd International Conference on Computer-Aided Design, ICCAD 2024

作者： Liu, Yiting Zhou, Hai Wang, Jia Yang, Fan Zeng, Xuan Shang, Li School of Computer Science Fudan University Shanghai China Department of ECE Northwestern University Evanston United States Department of ECE IIIinois Institute of Technology Chicago United States State Key Lab of ASIC & System Microelectronics Department Fudan University Shanghai China

ISBN: (纸本)9798400710773

Placement is a critical task with high computation complexity in VLSI physical design. Modern analytical placers formulate the placement objective as a nonlinear optimization task, which suffers a long iteration time. To accelerate and enhance the placement process, recent studies have turned to deep learning-based approaches, particularly leveraging graph convolution networks (GCNs). However, learning-based placers require time- and data-consuming model training due to the complexity of circuit placement that involves large-scale cells and design-specific graph statistics. This paper proposes GiFt, a parameter-free technique for accelerating placement, rooted in graph signal processing. GiFt excels at capturing multi-resolution smooth signals of circuit graphs to generate optimized placement solutions without the need for time-consuming model training, and meanwhile significantly reduces the number of iterations required by analytical placers. Experimental results show that GiFt significantly improving placement efficiency, while achieving competitive or superior performance compared to state-of-the-art placers. In particular, compared to DREAMPlace, the recently proposed GPU-accelerated analytical placer, GF-Placer improves total runtime over 45%. © 2024 Copyright is held by the owner/author(s).

关键词： Nonlinear programming

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Millimeter-Wave AlGaN/GaN HEMTs/Si Operated on 12V for 5G RF Handset Applications 16

Millimeter-Wave AlGaN/GaN HEMTs/Si Operated on 12V for 5G RF...

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16th IEEE International Conference on Solid-state and Integrated Circuit Technology, ICSICT 2022

作者： Liu, Dong-Sheng Wang, Peng Jiang, Yi-Zhou Huang, Wei Xiao, Zhi-Qiang Yang, Hong-Qiang Zhang, Wei. Fudan University State Key Laboratory of Asic and System Shanghai Institute of Intelligent Electronics & Systems School of Microelectronics Shanghai200433 China Wuxi Microelectronics Scientific and Research Center Wuxi214035 China University of Electronic Science and Technology of China The State Key Laboratory of Electronic Thin Films and Integrated Devices Chengdu610054 China

ISBN: (数字)9781665469067

ISBN: (纸本)9781665469067

In this paper, a RF AlGaN/GaN high electron mobility transistor (HEMT) based on low voltage application of 5G RF handset, firstly fabricated on high-resistive silicon substrate is introduced, which uses Ni/Au as T-shaped gate structure and double-layer silicide as surface medium. The maximum output current density of the device is 1.07 A/mm at Vds = 12 V and Vgs = 2 V. fT = 27.8 GHz and BV (the breakdown voltage) = 35 V/μm are obtained for the 180-nm gate-length device with 1-μm source-to-gate spacing. © 2022 IEEE.

关键词： Silicides

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Characterization of Reliabilities of 22 nm UTBB FDSOI Ring Oscillators 16

Characterization of Reliabilities of 22 nm UTBB FDSOI Ring O...

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16th IEEE International Conference on Solid-state and Integrated Circuit Technology, ICSICT 2022

作者： Cai, Chang Zhao, Kai Yu, Jian Chen, Gengsheng Shen, Mingjie Ning, Bingxu Yu, Jun Fudan University State Key Laboratory of Asic and System Shanghai China Fudan Microelectronics Co. Ltd. Shanghai China Zhangjiang Fudan International Innovation Center China

ISBN: (数字)9781665469067

ISBN: (纸本)9781665469067

In this paper, the Ring Oscillators (ROs) with inverters, 8 (or 16) dividers, and 3-level buffers are fabricated in a 22 nm Ultra-Thin Body and Buried oxide (UTBB) Fully Depleted Silicon on Insulator (FDSOI) technology. The ROs are comprehensively characterized by reliability tests including the impact of core voltages, temperatures, body bias, and Total Ionizing Dose (TID) effect. The RO frequency shows positive correlation with the increase of core voltage. With the positive variation of temperature conditions, the exponential growth of standby current, linear increase of the working current, and oscillation frequency are investigated in HSPICE simulation and measured by Automatic Test Equipment (ATE). Besides, the phenomenon of leakages for the core current and the Input/ Output (I/O) current are observed owing to the TID effect. Though the TID-induced degradations in frequency are observed, the ROs still have regular working functions. © 2022 IEEE.

关键词： Silicon on insulator technology

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Investigation of the Structural, Electronic, Optical, and Interface Properties of the Two-Dimensional Dion-Jacobson Perovskite BDA(MA)Mg2I7 for Lead-Free Solar Cells using Density Functional Theory 4

Investigation of the Structural, Electronic, Optical, and In...

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4th International Conference on New Energy and Power Engineering, ICNEPE 2024

作者： Traore, Aboubacar Li, Xing Molang, Cai School of New Energy North China Electric Power University State Key Laboratory of Alternate Electrical Power System With Renewable Energy Sources Beijing Key Laboratory of Novel Thin-Film Solar Cells Beijing China Chinese Academy of Sciences Institute of Microelectronics Beijing China

ISBN: (纸本)9798331516086

Two-dimensional (2D) Dion-Jacobson (DJ) perovskites are known for their exceptional optical properties and superior stability, surpassing those of traditional three-dimensional (3D) perovskites. However, the toxicity and instability of lead-based (Pb2+) perovskites raise growing environmental concerns, creating an urgent need to develop lead-free alternatives with tunable optoelectronic properties for safer and more efficient solar cells. In this study, we present the novel DJ perovskite BDA(MA)MgI, where magnesium (Mg2+) substitutes Pb2+, and we investigate its structural, optoelectronic, and interface properties using density functional theory (DFT). The analysis reveals a monoclinic 7PC structure with outstanding structural and thermodynamic stability, supported by favourable cohesive and formation energies. BDA(MA)Mg2I7 exhibits a direct bandgap of 1.12 eV, with a work function of 4.17 eV and an electron affinity of 3.61 eV, placing it within the theoretical power conversion efficiency (PCE) range exceeding 28%, as defined by the Shockley-Queisser (SQ) limit. Additionally, the material demonstrates strong light absorption, with an absorption coefficient of 4.104 cm1 and low reflectivity. The low effective masses of electrons (0.014 me) and holes (0.10 me), combined with a low exciton binding energy (14 meV), enhance charge separation efficiency. These results position BDA(MA)Mg2I7 as a promising, environmentally friendly alternative to lead-based perovskites. © 2024 IEEE.

关键词： Perovskite

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The Electrical-thermal Coupling Modeling about Large Periphery RF GaN HEMT on Si employing by Through Wafer Via Structure 16

The Electrical-thermal Coupling Modeling about Large Periphe...

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16th IEEE International Conference on Solid-state and Integrated Circuit Technology, ICSICT 2022

作者： Wei, Zhen-Tao Jiang, Yi-Zhou Wang, Ying-Sheng Huang, Wei Xiao, Zhi-Qiang Zhang, Wei Fudan University State Key Laboratory of Asic and System Shanghai Institute of Intelligent Electronics & Systems School of Microelectronics Shanghai200433 China Nanjing Electronic Device Institute Nanjing210016 China Wuxi Microelectronics Scientific and Research Center Wuxi214035 China

ISBN: (数字)9781665469067

ISBN: (纸本)9781665469067

Non-uniform thermal distribution affects about large periphery GaN HEMT based on through-via structure is analyzed in the paper. According to the self-heating effect and heat dissipation issues of Si-based GaN HEMT RF power devices, a high density through-via technology employing by conducting thermal near junction of multi-gate finger device downward to the heat sink is further put forward. Its corresponding placement provide a novel path for spreading heat directly from the heat source region of each of cell to the low temperature heat sink. From the thermal simulation with a total gate width of 8.1 mm, it is shown that compared with traditional structure devices, the maximum junction temperature of a uniform gate device with through-via structure is reduced by 34 °C, and the thermal resistance is reduced by 1.05 °C /W. Therefore, the through via technology as key process can play an important role in developing the large periphery RF GaN HEMT on high resistance Si substrate. © 2022 IEEE.

关键词： Heat sinks

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Laser-guided acoustic tweezers

arXiv

引用

arXiv 2022年

作者： Wang, Qing Chen, Shuhan Zhou, Jia Riaud, Antoine State Key Laboratory of ASIC and System School of Microelectronics Fudan University Shanghai200433 China

Acoustic tweezers1-3 can manipulate microscopic objects and cells independently of the optical4,5, magnetic6,7 and electrical properties 8,9 of the objects or their medium. However, because ultrasonic waves are attenuated within few millimeters, existing devices must synthesize intricate and powerful acoustic fields in a very narrow footprint immediately close to the manipulated object 10-14. Here we show that the design of microscale acoustic tweezers can be considerably simplified by taking advantage of the nonlinear nature of the acoustic trapping force. In our experiment, a featureless piezoelectric crystal coated with a photoacoustic conversion layer is hit by an electric pulse and a spatially modulated laser pulse to generate synchronized electro- and photo- acoustic waves. Interference between these waves creates a hybrid acoustic trapping force 30 times stronger than the laser pulse alone but with the same spatial information. By disentangling the tradeoff between spatial resolution and trapping force that has long held back the development of acoustic tweezers, this field hybridization strategy opens new avenues for cell manipulation in organ on chip and organ printing. Copyright © 2022, The Authors. All rights reserved.

关键词： Molecular biology

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Periodic Analysis of Adaptive LMS Filter in TIADC

Periodic Analysis of Adaptive LMS Filter in TIADC

引用

International Conference on asic

作者： Jiankun Li Zepeng Lin Fan Ye College of Microelectronics Fudan University Shanghai China State Key Laboratory of ASIC and System Fudan University Shanghai China

A periodic analysis of LMS adaptive filter in TI-ADC is presented. TI-ADC is a efficient technique to reach high sampling frequency but mismatches among different sub-ADCs influence its performance. LMS adaptive filter is a finite impulse response (FIR) filter which adapt itself to different inputs once implemented. To analyse SFDR performance of LMS filter in time domain, converged weigh vector and its analysis frequency domain are done theoretically and emulationally. Simulation shows that our theoretical analysis is consistent with the practical results that the useful range of SFDR performance is only negatively related to filter length if sampling frequency is constant. Further, it is concluded that there is a trade-off between maximum of SFDR in LMS filter and its useful range in terms of frequency.

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DASP: Defect and Dopant ab-initio Simulation Package

arXiv

引用

arXiv 2022年

作者： Huang, Menglin Zheng, Zhengneng Dai, Zhenxing Guo, Xinjing Wang, Shanshan Jiang, Lilai Wei, Jinchen Chen, Shiyou State Key Laboratory of ASIC and System School of Microelectronics Fudan University Shanghai 200433 China

In order to perform automated calculations of defect and dopant properties in semiconductors and insulators, we developed a software package, Defect and Dopant ab-initio Simulation Package (DASP), which is composed of four modules for calculating: (i) elemental chemical potentials, (ii) defect (dopant) formation energies and transition energy levels, (iii) defect and carrier densities and (iv) carrier dynamics properties of high-density defects. DASP uses the materials genome database for quick determination of competing secondary phases and calculation of the energy above convex hull when calculating the elemental chemical potential that stabilizes compound semiconductors, so it can perform high-throughput prediction of thermodynamic stability of multinary compounds. DASP calls the ab-initio softwares to perform the total energy, structural relaxation and electronic structure calculations of the defect supercells with different structure configurations and charge states, based on which the defect formation energies and transition energy levels are calculated and the corrections for electrostatic potential alignment and image charge interaction can be included. Then DASP can calculate the equilibrium densities of defects and electron and hole carriers as well as the Fermi level in semiconductors under different chemical potential conditions and different growth/working temperature. For high-density defects, DASP can calculate the carrier dynamics properties such as the photoluminescence (PL) spectrum, defect-related radiative and non-radiative carrier capture cross sections, and recombination lifetime of non-equilibrium carriers. DASP is expected to act as an automatic and reliable toolbox for calculating the defect and dopant properties, which can be compared to or used to interpret the experimental characterization results of defects using electrical and optical techniques such as PL and deep level transient spectroscopy (DLTS). Here we will introduce its unique f

关键词： Chemical stability

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In-memory computing to break the memory wall

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Chinese Physics B 2020年第7期29卷 28-48页

作者： Xiaohe Huang Chunsen Liu Yu-Gang Jiang Peng Zhou State Key Laboratory of ASIC and System School of MicroelectronicsFudan UniversityShanghai 200433China School of Computer Science Fudan UniversityShanghai 200433China

Facing the computing demands of Internet of things(IoT)and artificial intelligence(AI),the cost induced by moving the data between the central processing unit(CPU)and memory is the key problem and a chip featured with flexible structural unit,ultra-low power consumption,and huge parallelism will be ***-memory computing,a non-von Neumann architecture fusing memory units and computing units,can eliminate the data transfer time and energy consumption while performing massive parallel *** in-memory computing schemes modified from different memory technologies have shown orders of magnitude improvement in computing efficiency,making it be regarded as the ultimate computing *** we review the state-of-the-art memory device technologies potential for in-memory computing,summarize their versatile applications in neural network,stochastic generation,and hybrid precision digital computing,with promising solutions for unprecedented computing tasks,and also discuss the challenges of stability and integration for general in-memory computing.

关键词： in-memory computing non-volatile memory device technologies crossbar array

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Heavy ion‑induced MCUs in 28nm SRAM‑based FPGAs:upset proportions,classifications,and pattern shapes

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Nuclear Science and Techniques 2022年第12期33卷 128-137页

作者： Shuai Gao Xin‑Yu Li Shi‑Wei Zhao Ze He Bing Ye Li Cai You‑Mei Sun Guo‑Qing Xiao Chang Cai Jie Liu Institute of Modern Physics Chinese Academy of SciencesLanzhou 730000China University of Chinese Academy of Sciences Beijing 100049China School of Physics and Electronic Information Engineering Jining Normal UniversityUlanqab 012000China State Key Laboratory of ASIC and System Fudan UniversityShanghai 201203China

For modern scaling devices,multiple cell upsets(MCUs)have become a major threat to high-reliability field-programmable gate array(FPGA)-based ***,both performing the worst-case irradiation tests to provide the actual MCU response of devices and proposing an effective MCU distinction method are urgently *** this study,high-and medium-energy heavy-ion irradiations for the configuration random-access memory of 28 nm FPGAs are *** MCU extraction method supported by theoretical predictions is proposed to study the MCU sizes,shapes,and frequencies in *** on the extraction method,the different percentages,and orientations of the large MCUs in both the azimuth and zenith directions determine the worse irradiation response of the *** extracted largest 9-bit MCUs indicate that high-energy heavy ions can induce more severe failures than medium-energy *** results show that both the use of high-energy heavy ions during MCU evaluations and effective protection for the application of high-density 28 nm FPGAs in space are extremely necessary.

关键词： FPGAs Heavy ions Multiple cell upsets Extraction Worse irradiation

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