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17th IEEE International Conference on Solid-state and Integrated Circuit Technology, ICSICT 2024

作者： Liu, Linghao Ren, Junyan Ye, Fan Fudan University State Key Laboratory of ASIC and System Department of Microelectronics Shanghai China

ISBN: (纸本)9798350361834

The ring amplifier is an energy effective choice for high performance pipeline ADC. However, sensitivity to process, supply voltage and temperature (PVT) variations and complex stability mechanism make it less practical. This brief introduces a coarse-fine ring amplifier (CFRingAmp) that allows individual designs of large-signal and small-signal processes. With a large and a smaller dead-zones switched by the self-detect-and-switch block, both stability and accuracy are well designed over corners. Furthermore, a 250MS/s, 12-bit pipeline-SAR ADC is implemented adopting the proposed CFRingAmp. Simulated in 28nm CMOS, the ADC achieves an SNDR of 64.1 dB and an SFDR of 74.9 dB over corners at Nyquist frequency while consuming 4.5mW, resulting a Walden figure-of merit (FoM) of 12.7 fJ/conversion step. © 2024 IEEE.

关键词： CMOS integrated circuits

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Design of interdigitated transducers for acoustofluidic applications

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Nanotechnology and Precision Engineering 2022年第3期5卷 36-54页

作者： Shuren Song Qi Wang Jia Zhou Antoine Riaud State Key Laboratory of ASIC and System School of MicroelectronicsFudan UniversityShanghaiPeople’s Republic of China

Interdigitated transducers(IDTs)were originally designed as delay lines for *** a century later,they have found new life as actuators for microfluidic *** generating strong acoustic fields,they trigger nonlinear effects that enable pumping and mixing of fluids,and moving particles without ***,the transition from signal processing to actuators comes with a range of challenges concerning power density and spatial resolution that have spurred exciting developments in solid-state acoustics and especially in IDT *** some familiarity with acoustofluidics,this paper aims to provide a tutorial for IDT design and characterization for the purpose of acoustofluidic *** is targeted at a diverse audience of researchers in various fields,including fluid mechanics,acoustics,and microelectronics.

关键词： Acoustic field Surface acoustic wave Transducer Finite-element analysis Simulation Acoustical properties Lab-on-a-chip Acoustic wave attenuation

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General Vector Instruction Extension for GF(2m) Polynomial Operation in Post-quantum Cryptography 15

General Vector Instruction Extension for GF(2m) Polynomial O...

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15th IEEE International Conference on asic, asicON 2023

作者： Kuang, Honglin Zhao, Yifan Sun, Yi Han, Jun Fudan University State Key Laboratory of ASIC and System School of Microelectronics Shanghai China

ISBN: (纸本)9798350312980

We present a general vector instruction extension applicable for both ARM NEON and RISC-V Vector Extension. The extension targets efficient bit-manipulation and can provide considerable speedup for applications in GF(2m) such as code-based post-quantum cryptography schemes. The effectiveness of the extension is evaluated by using the custom instructions to optimize the kernel operations in BIKE key-encapsulation schemes. We first innovate vectorized versions of bit-polynomial multiplication and inversion algorithms in GF(2m) and propose vector instruction extension. Furthermore, a configurable hardware unit has been proposed to support custom operations of different bandwidths at little cost and constant latency. Both experiments on Xilinx UltraScale+ ZCU104 for ARM and simulations on gem5 for RISC-V have been carried out. Compared to portable C implementation, the result shows a speedup for bit-polynomial multiplication and inversion of up to 13x and 16x in ARM, 13x and 22x in RISC-V respectively. © 2023 IEEE.

关键词： BIKE Polynomial inversion Polynomial multiplication Post-quantum cryptography Vector ISA extension

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Analog ferroelectric domain-wall memories and synaptic devices integrated with Si substrates

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Nano Research 2022年第4期15卷 3606-3613页

作者： Chao Wang Tianyu Wang Wendi Zhang Jun Jiang Lin Chen Anquan Jiang State Key Laboratory of ASIC&Systems School of MicroelectronicsFudan UniversityShanghai 200433China

Brain-inspired neuromorphic computing can overcome the energy and throughput limitations of traditional von Neumann-type computing systems,which requires analog updates of their artificial synaptic strengths for the best recognition performance and low energy ***,we report synaptic devices made from highly insulating ferroelectric LiNbO_(3)(LNO)thin films bonded to SiO_(2)/Si *** the creation/annihilation of periodically arrayed antiparallel domains within LNO nanocells,which are stimulated using positive/negative voltage pulses(synaptic plasticity),we can modulate the synaptic conductance linearly by controlling the number of the conducting domain *** multilevel conductance is nonvolatile and reproducible with negligible dispersion over 100 switching cycles,representing much better performance than that of random defect-based nonlinear memristors,which generally exhibit large-scale resistance *** simulation of a neuromorphic network using these LNO artificial synapses achieves 95.6%recognition accuracy for faces,thus approaching the theoretical yield of ideal neuromorphic computing devices.

关键词： LiNbO_(3)(LNO) domain wall memristor synaptic plasticity recognition

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Recent progress on two-dimensional ferroelectrics:Material systems and device applications

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Chinese Physics B 2023年第12期32卷 40-53页

作者：范芷薇渠靖媛王涛温滟安子文姜琦涛薛武红周鹏许小红 Key Laboratory of Magnetic Molecules and Magnetic Information Materials of Ministry of Education and School of Chemistry and Materials Science Shanxi Normal UniversityTaiyuan 030031China State Key Laboratory of ASIC&System School of MicroelectronicsFudan UniversityShanghai 200433China

Ferroelectrics are a type of material with a polar structure and their polarization direction can be inverted reversibly by applying an electric *** have attracted tremendous attention for their extensive applications in non-volatile memory,sensors and neuromorphic ***,conventional ferroelectric materials face insulating and interfacial issues in the commercialization *** contrast,two-dimensional(2D)ferroelectric materials usually have excellent semiconductor performance,clean van der Waals interfaces and robust ferroelectric order in atom-thick layers,and hold greater promise for constructing multifunctional ferroelectric optoelectronic devices and nondestructive ultra-high-density ***,2D ferroelectrics have obtained impressive breakthroughs,showing overwhelming ***,firstly,the progress of experimental research on 2D ferroelectric materials is ***,the preparation of 2D ferroelectric devices and their applications are ***,the future development trend of 2D ferroelectrics is looked at.

关键词： two-dimensional materials ferroelectrics device applications

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Surface plasmon assisted high-performance photodetectors based on hybrid TiO_(2)@GaO_(x)N_(y)-Ag heterostructure

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Journal of Semiconductors 2023年第7期44卷 45-53页

作者： Jiajia Tao Guang Zeng Xiaoxi Li Yang Gu Wenjun Liu David Wei Zhang Hongliang Lu State Key Laboratory of ASIC and System Shanghai Institute of Intelligent Electronics&SystemsSchool of MicroelectronicsFudan Univer-sityShanghai 200433China Jiashan Fudan Institute Jiaxing 314100China

In this work,we reported a high-performance-based ultraviolet-visible(UV-VIS)photodetector based on a TiO_(2)@GaO_(x)N_(y)-Ag *** particles were introduced into TiO_(2)@GaO_(x)N_(y)to enhance the visible light detection perfor-mance of the heterojunction *** 380 nm,the responsivity and detectivity of TiO_(2)@GaO_(x)N_(y)-Ag were 0.94 A/W and 4.79×109 Jones,respectively,and they increased to 2.86 A/W and 7.96×1010 Jones at 580 *** rise and fall times of the response were 0.19/0.23 and 0.50/0.57 s,***,at 580 nm,the responsivity of fabricated devices is one to four orders of magnitude higher than that of the photodetectors based on TiO_(2),Ga_(2)O_(3),and other *** excellent optoelectronic characteristics of the TiO_(2)@GaO_(x)N_(y)-Ag heterojunction device could be mainly attributed to the synergistic effect of the type-Ⅱband structure of the metal-semiconductor-metal heterojunction and the plasmon resonance effect of Ag,which not only effectively promotes the separation of photogenerated carriers but also reduces the recombination *** is fur-ther illuminated by finite difference time domain method(FDTD)simulation and photoelectric *** TiO_(2)@GaO_(x)N_(y)-Ag arrays with high-efficiency detection are suitable candidates for applications in energy-saving communica-tion,imaging,and sensing networks.

关键词： TiO_(2)@GaO_(x)N_(y)-Ag ultraviolet-visible photodetector type-Ⅱband structure plasmon resonance effect

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Forming-free flexible memristor with multilevel storage for neuromorphic computing by full PVD technique

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Journal of Materials Science & Technology 2021年第1期60卷 21-26页

作者： Tian-Yu Wang Jia-Lin Meng Qing-Xuan Li Lin Chen Hao Zhu Qing-Qing Sun Shi-Jin Ding David Wei Zhang State Key Laboratory of ASIC and System School of MicroelectronicsFudan UniversityShanghai 200433China

Flexible resistive random access memory(RRAM) has shown great potential in wearable *** tunable multilevel resistance states,flexible memristors could be used to mimic the bio-synapses for constructing high-efficient wearable neuromorphic computing ***,the flexible substrate has intrinsic disadvantages including low-tempe rature tolerance and poor complementary metal-oxidesemiconductor(CMOS) compatibility,which limit the development of flexible *** physical vapor deposition(PVD) fabrication process could prepare RRAM without requirement of further treatment,which greatly simplified preparation steps and reduced the production *** the other hand,forming process,as a common pre-programing operation in RRAM,increases the energy consumption and limits the application scenarios of ***,a NiO-based forming-free RRAM with low set voltage was fabricated via full PVD *** flexible device exhibited reliable re sistive switching characteristics under flat state even compre s sive and tensile states(R=10 mm).The tunable multilevel resistance states(5 levels) could be obtained by controlling the compliance ***,synaptic plasticities also were verified in this *** flexible NiO-based RRAM shows great potential in wearable forming-free multibit memo ry and neuromorphic computing electronics.

关键词： Full PVD process Flexible memristor Forming-free Multilevel storage Neuromorphic application

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CO_(2) reduction with coin catalyst

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Nano Research 2022年第5期15卷 3859-3865页

作者： Taishi Xiao Can Tang Hongbin Li Tong Ye Kun Ba Peng Gong Zhengzong Sun Department of Chemistry and Shanghai Key Laboratory of Molecular Catalysis and Innovative Materials Fudan UniversityShanghai 200433China School of Microelectronics and State Key Laboratory of ASIC and System Fudan UniversityShanghai 200433China

Most organic commodity chemicals are derived from fossil carbon *** dependency is so immense that it is difficult to compensate for the accompanying carbon footprint with current technology and chemical *** mitigate the future fossil fuel usage,it is crucial to explore alternative chemical pathways,which are both sustainable and suitable for large-scale *** we demonstrate a closed-loop carbon-neutral chemical route,using standard coin catalyst,to produce high concentrated formate and formic *** catalyst's Faradaic efficiency(FE)of formate is~95.3% with great *** chemicals are not only synthesized but also purified and utilized in zero-carbon *** successfully harvested 45%formate salt and 86.2% formic acid,for applications like anti-freezing reagent and green liquid fuel to power the fuel-cell vehicles.

关键词： closed-loop lifecycle electrocatalysis coin catalyst

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Thermal engineering in ALD-grown ZGO thin films for high-performance photodetectors

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材料科学技术（英文版） 2025年第6期209卷 19-26页

作者： Si-Tong Ding Yu-Chang Chen Cai-Yu Shi Lei Shen Qiu-Jun Yu Lang-Xi Ou Ze-Yu Gu Na Chen Ting-Yun Wang David Wei Zhang Hong-Liang Lu State Key Laboratory of ASIC and System Shanghai Institute of Intelligent Electronics & SystemsSchool of MicroelectronicsFudan UniversityShanghai 200433China Zhangjiang Fudan International Innovation Center Shanghai 201203China National Integrated Circuit Innovation Center Shanghai 201203China Key Laboratory of Specialty Fiber Optics and Optical Access Networks Shanghai Institute Communication and Data ScienceShanghai UniversityShanghai 200444China State Key Laboratory of ASIC and System Shanghai Institute of Intelligent Electronics & SystemsSchool of MicroelectronicsFudan UniversityShanghai 200433China Zhangjiang Fudan International Innovation Center Shanghai 201203China National Integrated Circuit Innovation Center Shanghai 201203China Jiashan Fudan Institute Jiaxing 314100China

Doped gallium oxide-based thin films are a class of wide-band semiconductor materials with the ad-vantages of chemically stable,tunable bandgap,and offer the benefit of ultraviolet *** order to obtain photodetectors(PDs)with superior response,higher demands are placed on the quality of growth and processing of doped *** this work,Zn-doped ternary metal oxide ZnGaO(ZGO)thin films were grown using the atomic layer deposition technique and annealed at different temperatures under an oxy-gen *** results showed that the high-quality ZGO films with good uniformity,high visible light transmittance,low roughness,and significant reduction of oxygen vacancies were obtained after ***,metal-semiconductor-metal PDs were prepared based on the studied ZGO *** responsivity(R),detectivity(D*),and external quantum efficiency(EQE)of the optimized device are 61.8 A W-1,1.2 x 1012 Jones,and 255.9％,*** to the unannealed device,the an-nealed ZGO PD achieves a maximum 309-fold increase in *** thermal engineering work may provide a strong reference for the development of low-cost,large-area,high-performance ultraviolet *** it also broadens the application of ternary metal oxides in optoelectronics.

关键词： Atomic layer deposition Oxygen annealing ZGO thin films Photodetector Ultraviolet detection

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A Comprehensive and Efficient Instruction-level Testing Method for Processor 17

A Comprehensive and Efficient Instruction-level Testing Meth...

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17th IEEE International Conference on Solid-state and Integrated Circuit Technology, ICSICT 2024

作者： Yang, Zixin Wei, Zhichao Luo, Huanlin Wang, Jian Lai, Jinmei School of Microelectronics Fudan University State Key Laboratory of ASIC and System Shanghai201203 China Shanghai Academy of Spaceflight Technology Shanghai201109 China

ISBN: (纸本)9798350361834

Testing of the processor is crucial, which necessitates a comprehensive test set to ensure an efficient and thorough coverage. We herein propose an Equivalence Class Partitioning and Boundary Value Analysis (ECP-BVA) constrained instruction stream generation method on coverage-guided fuzzing (CGF). The updated ECP-BVA constraints mutate the instruction field to maximize the coverage metrics. The accelerated coverage-guided fuzzing skipes redundant instructions to improve the testing efficiency. An efficient test set is built by fuzzing and the experimential results indicate that our method can maximize coverage metrics close to 100% in a short time, thereby ensuring a comprehensive and efficient coverage for processor testing. © 2024 IEEE.

关键词： Equivalence classes

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