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BMRMIA:A Platform for Radiologists to systematically Learn Automated Medical Image Analysis by Three Dimensional Medical Decision Support system

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Computer Modeling in Engineering & Sciences 2022年第5期131卷 851-863页

作者： Yankun Cao Lina Xu Zhi Liu Xiaoyan Xiao Mingyu Wang Qin Li Hongji Xu Geng Yang School of Software Shandong UniversityJinan250101China School of Information Science and Engineering Shandong UniversityQingdao266237China School of Computer Science and Technology Shandong Jianzhu UniversityJinan250012China Department of Nephrology Qilu Hospital of Shandong UniversityJinan250012China State Key Laboratory of ASIC&Systems The School of MicroelectronicsFudan UniversityShanghai200433China Shenzhen Institute of Information Technology Shenzhen518172China

Contribution:This paper designs a learning and training platform that can systematically help radiologists learn automated medical image analysis *** platform can help radiologists master deep learning theories and medical applications such as the three-dimensional medical decision support system,and strengthen the teaching practice of deep learning related courses in hospitals,so as to help doctors better understand deep learning knowledge and improve the efficiency of auxiliary ***:In recent years,deep learning has been widely used in academia,industry,*** increasing number of companies are starting to recruit a large number of professionals in the field of deep *** numbers of colleges and universities also offer courses related to deep learning to help radiologists learn automated medical image analysis *** now,however,there is no practical training platform that can help radiologists learn automated medical image analysis ***:The platform proposes the basic learning,model combat,business application(BMR)concept,including the learning guidance system and the assessment training system,which constitutes a closed-loop learning guidance mode of“learning-assessment-training-learning”.Findings:The survey results show that most of radiologists met their learning expectations by using this *** platform can help radiologists master deep learning techniques quickly,comprehensively and firmly.

关键词： BMR deep learning three dimensional medical decision support system deep learning engineer standard

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Isopropanol swelling of polydimethylsiloxane for reducing gold nanoparticles to enhance photoacoustic transducer 15

Isopropanol swelling of polydimethylsiloxane for reducing go...

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15th IEEE International Conference on Solid-state and Integrated Circuit Technology, ICSICT 2020

作者： Wang, Qing Wang, Xubo Song, Shuren Riaud, Antoine Zhou, Jia State Key Laboratory of Asic and System School of Microelectronics Fudan University Shanghai200433 China

ISBN: (纸本)9781728162355

Gold nanoparticles (Au NPs)-polydimethylsiloxane (PDMS) nanocomposite has been of particular interest in the photoacoustic (PA) transducer with characteristics of good high frequency and wide bandwidth. To form highly-efficient Au NPs-PDMS nanocomposite, one developed synthesis method is based on solvent swelling of PDMS, like use of water and ethanol. In this work, we synthesized a new Au NPs-PDMS nanocomposite where isopropanol was chosen as solvent to form Au NPs partly embedded into PDMS matrix by means of top-down in-situ reduction. We measured morphological characteristics of the nanocomposite. Optical absorption and PA generation were tested to evaluate performances. The results demonstrate that isopropanol as solvent is beneficial to enhance PA generation in terms of high light absorption (95%) and 6.38 nm of PA amplitude with 6 cm s-1 of vibration speed which is higher than ethanol and even 6-fold more than water. These enhanced characteristics support using Au NPs nanocomposite as high-amplitude and high-frequency photoacoustic transuducer material. © 2020 IEEE.

关键词： Polydimethylsiloxane

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Memristive switching in the surface of a charge-density-wave topological semimetal

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Science Bulletin 2024年第13期69卷 2042-2049页

作者： Jianwen Ma Xianghao Meng Binhua Zhang Yuxiang Wang Yicheng Mou Wenting Lin Yannan Dai Luqiu Chen Haonan Wang Haoqi Wu Jiaming Gu Jiayu Wang Yuhan Du Chunsen Liu Wu Shi Zhenzhong Yang Bobo Tian Lin Miao Peng Zhou Chun-Gang Duan Changsong Xu Xiang Yuan Cheng Zhang State Key Laboratory of Surface Physics and Institute for Nanoelectronic Devices and Quantum Computing Fudan UniversityShanghai 200433China State Key Laboratory of Precision Spectroscopy East China Normal UniversityShanghai 200241China Key Laboratory of Computational Physical Sciences(Ministry of Education) Institute of Computational Physical SciencesState Key Laboratory of Surface PhysicsDepartment of PhysicsFudan UniversityShanghai 200433China Shanghai Qi Zhi Institute Shanghai 200030China School of Physics Southeast UniversityNanjing 211189China Key Laboratory of Polar Materials and Devices(Ministry of Education) Department of ElectronicsEast China Normal UniversityShanghai 200241China Shanghai Center of Brain–inspired Intelligent Materials and Devices East China Normal UniversityShanghai 200241China State Key Laboratory of ASIC and System School of MicroelectronicsFudan UniversityShanghai 200433China Frontier Institute of Chip and System Fudan UniversityShanghai 200433China Zhangjiang Fudan International Innovation Center Fudan UniversityShanghai 201210China School of Physics and Electronic Science East China Normal UniversityShanghai 200241China

Owing to the outstanding properties provided by nontrivial band topology,topological phases of matter are considered as a promising platform towards low-dissipation electronics,efficient spin-charge conversion,and topological quantum *** ferroelectricity in topological materials enables the non-volatile control of the quantum states,which could greatly facilitate topological electronic ***,ferroelectricity is generally incompatible with systems featuring metallicity due to the screening effect of free *** this study,we report the observation of memristive switching based on the ferroelectric surface state of a topological semimetal(TaSe_(4))*** find that the surface state of(TaSe_(4))2I presents out-of-plane ferroelectric polarization due to surface *** the combination of ferroelectric surface and charge-density-wave-gapped bulk states,an electric-switchable barrier height can be achieved in(TaSe_(4))2I-metal *** employing a multi-terminal-grounding design,we manage to construct a prototype ferroelectric memristor based on(TaSe_(4))2I with on/off ratio up to 103,endurance over 103 cycles,and good retention *** origin of the ferroelectric surface state is further investigated by first-principles calculations,which reveal an interplay between ferroelectricity and band *** emergence of ferroelectricity in(TaSe_(4))2I not only demonstrates it as a rare but essential case of ferroelectric topological materials,but also opens new routes towards the implementation of topological materials in functional electronic devices.

关键词： Topological semimetal Schottky barrier Surface ferroelectricity Memristor

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High-performance violet phosphorus photodetectors with van der Waals-assisted contacts

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Science China(Physics,Mechanics & Astronomy) 2023年第9期66卷 86-93页

作者： Hao Wang Shuling Liu Peng Wang Haonan Ge Yue Chen Hailu Wang Tengfei Xu Jiaxiang Guo Yuanchen Zou Wenrui Wei Ruiqi Jiang Fang Wang Piotr Martyniuk Jinshui Miao Weida Hu State Key Laboratory of Infrared Physics Shanghai Institute of Technical PhysicsChinese Academy of SciencesShanghai 200083China School of Physics and Photoelectric Engineering Hangzhou Institute for Advanced StudyUniversity of Chinese Academy of SciencesHangzhou 310024China Institute of Applied Physics Military University of TechnologyWarsaw 00-908Poland Frontier Institute of Chip and System Fudan UniversityShanghai 200438China School of Microelectronics Shanghai UniversityShanghai 201800China University of Chinese Academy of Sciences Beijing 100049China

Black phosphorus(BP) as a narrow-bandgap two-dimensional semiconductor material has been extensively studied. And the allotrope violet phosphorus(VP) exhibits wide bandgap properties extending the application in the visible light band. However,due to the Schottky barrier of metal/semiconductor contacts(M/S), further device application of VP is limited. Here, VP-based photodetectors with van der Waals-assisted contact were demonstrated, achieving quasi-Ohmic M/S contacts. The output characteristics in dark conditions show ultralow current at the pA level. And the device exhibits a high current on-off ratio of 10~5and a fast response speed of 8.4 ms. Furthermore, we constructed the first allotropic photodetector based on BP and VP heterojunction. The device maintains ultralow dark current(~ pA) while exhibiting faster carrier transport, with 945 μs response time and polarization detection capability. These results offer an effective way to study the optoelectronic properties of VP and promote the study of allotropic heterojunction devices.

关键词： violet phosphorus two-dimensional materials photodetectors Ohmic contact allotropic heterojunction

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Automated Compensation Scheme Design for Operational Amplifier via Bayesian Optimization 21

Automated Compensation Scheme Design for Operational Amplifi...

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Proceedings of the 58th Annual ACM/IEEE Design Automation Conference

作者： Jialin Lu Liangbo Lei Fan Yang Changhao Yan Xuan Zeng State Key Lab of ASIC & System School of Microelectronics Fudan University Shanghai P. R. China

ISBN: (纸本)9781665432740

Operational amplifier is a basic component for analog circuit design. The compensation network of an operational amplifier is crucial to improve the stability of the operational amplifier. In this paper, we present an automated compensation scheme design approach for operational amplifiers. We map the behavioral-level description of the operational amplifier to an acyclic graph and transfer the compensation design problem into a topology optimization problem. A feature mapping method is proposed to encode the graph and a bi-level Bayesian optimization approach is proposed to efficiently solve the topology optimization problem. Experimental results show that our proposed method can obtain competitive three-stage operational amplifiers compared to manual designs.

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A 12.87-dB Gain 10.5-dBm OPldB60-to-66-GHz LNA in 0.15-μm GaAs pHEMT Technology

A 12.87-dB Gain 10.5-dBm OPldB60-to-66-GHz LNA in 0.15-μm G...

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Asia Pacific Conference on Postgraduate Research in microelectronics & Electronics (PrimeAsia)

作者： Xuefeng Li Yuting Wang Tianxiang Wu Yong Chen Junyan Ren Shunli Ma State Key Laboratory of ASIC and System School of Microelectronics Fudan University Shanghai China State-Key Laboratory of Analog and Mixed-Signal VLSI and IME/ECE-FST University of Macau Macao China

This paper presents a V-band low noise amplifier (LNA) implemented in a $\boldsymbol{0.15-\mu} \mathbf{m}$ Gallium Arsenide (GaAs) pseudomorphic high electron-mobility transistor (pHEMT) technology. The LNA adopts a three-stage common-source (CS) topology. Each transistor has a bias circuit, and the microstrip-line inductor is used to realize the input noise matching network, the interstage, and the output matching network. Circuit simulations show that our LNA scores a 12.87-dB small-signal gain, the 3-dB bandwidth ranges from 60 GHz to 66 GHz, and the current consumption is 30 mA under a 5-V supply voltage. Its noise figure is 5.9 dB, and the output 1-dB compression point is 10.5 dBm. The chip area is $\boldsymbol{1.32}\times \boldsymbol{1.5}\mathbf{mm}^{2}$ .

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Hardware-Friendly Block Variable-Length Sampling Pruning for Graph Neural Networks

Hardware-Friendly Block Variable-Length Sampling Pruning for...

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Midwest Symposium on Circuits and systems (MWSCAS)

作者： Jing Zhang Gengsheng Chen Lingyun Ke Luchang Ding Xin Fan Zehao Wu Lei Shen Chang Cai State Key Laboratory of ASIC and System Fudan University Shanghai China Shanghai Fudan Microelectronics Group Company Limited Shanghai China University of Chinese Academy of Sciences Beijing China

Graph Neural Networks (GNNs) have achieved success in graph-based applications. Despite the proposed technologies are useful to speed up GNNs, the existing pruning methods still require extra costs and are hardly able to improve the hardware efficiency. Here, we propose a Block Variable-length Sampling Pruning (BVSP) method to balance the hardware workload, reduce the redundancy of graph structure, alleviate data sparsity, and improve the efficiency of hardware acceleration. Two sampling strategies for different scenarios are proposed. We evaluate our method on datasets and models, and it is verified that our method can achieve a pruning ratio of 10%to 50% and reduce the hardware scheduling workloads by 60% to 99% without any accuracy loss and extra costs.

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Efficient Model-Based OPC via Graph Neural Network

Efficient Model-Based OPC via Graph Neural Network

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Electronics Design Automation (ISEDA), International Symposium of

作者： Shuyuan Sun Xuelian Chen Fan Yang Bei Yu Shang Li Xuan Zeng State Key Lab of ASIC & System School of Microelectronics Fudan University China Cogenda Inc China Department of Computer Science and Engineering The Chinese University of Hong Kong China

As feature size continues to shrink and light source wavelengths remain unchanged, the optical diffraction effects seriously degrade chip yield. Optical proximity correction (OPC) has become an essential step for chip manufacturability. However, OPC cannot achieve satisfactory mask correction results in an affordable number of iterations on some layouts, delaying the chip design cycle. In this paper, we propose to use the Graph Neural Network (GNN) to predict the initial mask correction and speed up model-based OPC. We design a graph model to represent the chip layout, with segments represented as graph nodes and the diffraction effects between them represented as graph edges. The GNN is used to obtain the embedding of the segment, and we predict the shift value based on its output. The proposed GNN-based predictor enhances the original OPC to find a good correction solution for full-chip-size masks in fewer iterations. compared with the original OPC method, experimental results on 55nm and 32nm full chip designs show that the proposed GNN-based OPC method reduces the number of iterations up to 75% and the acquired mask of comparable quality.

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An Efficient Phase Noise Elimination Method to Facilitate Cost-effective 100/200G Coherent PON

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Journal of Lightwave Technology 2025年

作者： Chen, Yifan Wang, Chen Yu, Jianjun Long, Jianyu Sang, Bohan Li, Fan Sun Yat-Sen University School of Electronics and Information Technology Guangdong Provincial Key Laboratory of Opto-Electronic Information Processing Chips and Systems Guangzhou510275 China Fudan University State Key Laboratory of ASIC and System Shanghai200433 China

In the field of passive optical networks (PONs), coherent sinking has emerged as a significant topic, particularly in the context of cost and complexity improvements. We experimentally demonstrate a cost-effective 100-/200-Gbits/s/λ coherent PON system employing dual-polarization quadrature phase shift keying (DP-QPSK) and 16-ary quadrature amplitude modulation (DP-16QAM). To achieve cost reductions in coherent PON implementations, we employ low-cost distributed feedback lasers (DFBs) as the sole active light sources, replacing the much more expensive external cavity lasers (ECLs) at both the optical line terminal (OLT) and the optical network units (ONUs). To effectively address the performance penalty associated with phase noise (PN) of DFBs characterized by MHz-class linewidths, a straightforward carrier phase recovery (CPR) is proposed via embedding a one-tap carrier phase estimator (CPE) with gradient-descent algorithm into a 4×4 multiple-input multiple-output (MIMO) equalizer following the least-mean square algorithm (LMS). This approach simplifies the structure and enables more precise cancellation of PN. We conduct a transmission performance comparison at 32 Gbaud between our proposed scheme and the blind phase searching algorithm (BPS) for single-carrier (SC) signals, as well as between our method and the frequency-domain pilot-tone carrier phase recovery (FPT-CPR) for two-sub-band digital subcarrier multiplexing (DScM) signals. Experimental results demonstrate the corresponding power budgets of 38.1, 30.8, 36.5, and 29.1 dB for SC-QPSK/16QAM and DScM-QPSK/16QAM at the 20% soft-decision forward error correction (SD-FEC) threshold of 2×10-2. Furthermore, complexity analysis of these phase noise estimation (PNE) methods reveals the superiority of our proposed scheme in balancing performance and computational complexity. © 1983-2012 IEEE.

关键词： Passive optical networks

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Photoresponsive characteristics of thin film transistors with perovskite quantum dots embedded amorphous InGaZnO channels

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Chinese Physics B 2020年第7期29卷 588-595页

作者： Mei-Na Zhang Yan Shao Xiao-Lin Wang Xiaohan Wu Wen-Jun Liu Shi-Jin Ding State Key Laboratory of ASIC and System School of MicroelectronicsFudan UniversityShanghai 200433China Center for Information Photonics and Energy Materials Shenzhen Institutes of Advanced TechnologyChinese Academy of SciencesShenzhen 518055China

Photodetectors based on amorphous InGaZnO(a-IGZO)thin film transistor(TFT)and halide perovskites have attracted attention in recent ***,such a stack assembly of a halide perovskite layer/an a-IGZO channel,even with an organic semiconductor film inserted between them,easily has a very limited *** this article,we investigate photoresponsive characteristics of TFTs by using CsPbX3(X=Br or I)quantum dots(QDs)embedded into the a-IGZO channel,and attain a high photoresponsivity over 10^3A·W^-1,an excellent detectivity in the order of 10^16 Jones,and a light-to-dark current ratio up to 10^5 under visible *** should be mainly attributed to the improved transfer efficiency of photoelectrons from the QDs to the a-IGZO ***,spectrally selective photodetection is demonstrated by introducing halide perovskite QDs with different ***,this work provides a novel strategy of device structure optimization for significantly improving the photoresponsive characteristics of TFT photodetectors.

关键词： perovskite quantum dots a-IGZO thin-film transistor photoresponsive characteristics

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