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Formation of Bi−Bi Dimers in Heavily Bi-Doped Lead Halide Perovskites: Origin of Carrier Density Saturation

Physical Review Applied 2022年第2期17卷 024024-024024页

作者： Shanshan Wang Menglin Huang Yu-Ning Wu Shiyou Chen Key Laboratory of Polar Materials and Devices (MOE) and Department of Electronics East China Normal University Shanghai 200241 China Key Laboratory for Computational Physical Sciences (MOE) State Key Laboratory of ASIC and System School of Microelectronics Fudan University Shanghai 200433 China Shanghai Qi Zhi Institute Shanghai 200030 China

Heterovalent Bi doping in lead halide perovskites (LHPs) is of particular interest in recent research to improve the electronic and optoelectronic properties. In experiments, the incorporation of Bi not only converts the conductivity type of crystals from p type to n type, leading to the significant enhancement of charge-carrier concentration, but also results in the appearance of near-infrared photoluminescence (NIR PL) along with the decrease of band-edge PL intensity. However, with a high concentration of Bi doping, the carrier concentration exhibits a saturated tendency and the intensity of NIR PL decreases abnormally. The origins behind these interesting phenomena are not yet well understood. Herein, based on first-principles calculations, we demonstrate that Bi dimers form n type and intrinsic LHPs with a high concentration of Bi doping. They act as effective n-type limiting defects, and hence, cause carrier saturation in experiments. Moreover, the NIR PL arising from the BiPb defect is suppressed due to the density conversion of isolated BiPb defects to Bi dimers when Bi is heavily doped. Meanwhile, nonradiative recombination is also promoted due to the deep charge-state transition level introduced by the Bi dimer. Our work not only reveals the mechanism of highly concentrated Bi limiting the electronic and optical properties of LHPs, but also suggests the precise control of Bi doping in electronic and photovoltaic applications.

关键词： Carrier generation & recombination Dopants Luminescence Optoelectronics Doped semiconductors Perovskites Photovoltaic absorbers Density functional calculations

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Mining Lithography Hotspots from Massive SEM Images Using Machine Learning Model

Mining Lithography Hotspots from Massive SEM Images Using Ma...

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2021 China Semiconductor Technology International Conference, CSTIC 2021

作者： Zhou, Tao Xu, Bowen Li, Chen Diao, Xuling Yan, Yan Chen, Shoumian Zhao, Yuhan Zhou, Kan Zhou, Wenzhan Zeng, Xuan Shi, Xuelong Shanghai Integrated Circuits Rd Center Co. Ltd. Shanghai China State Key Lab of Asic System School of Microelectronics Fudan University Shanghai China

ISBN: (纸本)9781665449458

An effect method based on machine learning is developed for hotspots mining in lithography. A series of models are trained independently and combined to achieve high accuracy. Innovatively, contour information is firstly adopted to assist the hotspot detection, which eases the very challenging task of detection for topology aberration caused by complicated process effects. More importantly, the proposed method based on new methodology provides high efficiency which is competent for high volume manufacturing. © 2021 IEEE.

关键词： Machine learning

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Mixed Structural Choice Operator: Enhancing Technology Mapping with Heterogeneous Representations

arXiv

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arXiv 2025年

作者： Hu, Zhang Pan, Hongyang Xia, Yinshui Wang, Lunyao Chu, Zhufei Faculty of Electrical Engineering and Computer Science Ningbo University Ningbo315211 China School of Microelectronics State Key Laboratory of Integrated Chips and System Fudan University Shanghai200433 China

—The independence of logic optimization and technology mapping poses a significant challenge in achieving high-quality synthesis results. Recent studies have improved optimization outcomes through collaborative optimization of multiple logic representations and have improved structural bias through structural choices. However, these methods still rely on technology-independent optimization and fail to truly resolve structural bias issues. This paper proposes a scalable and efficient framework based on Mixed Structural Choices (MCH). This is a novel heterogeneous mapping method that combines multiple logic representations with technology-aware optimization. MCH flexibly integrates different logic representations and stores candidates for various optimization strategies. By comprehensively evaluating the technology costs of these candidates, it enhances technology mapping and addresses structural bias issues in logic synthesis. Notably, the MCH-based lookup table (LUT) mapping algorithm set new records in the EPFL Best Results Challenge by combining the structural strengths of both And-Inverter Graph (AIG) and XOR-Majority Graph (XMG) logic representations. Additionally, MCH-based asic technology mapping achieves a 3.73% area and 8.94% delay reduction (balanced), 20.35% delay reduction (delay-oriented), and 21.02% area reduction (area-oriented), outperforming traditional structural choice methods. Furthermore, MCH-based logic optimization utilizes diverse structures to surpass local optima and achieve better results. Copyright © 2025, The Authors. All rights reserved.

关键词： Mapping

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Advanced growth techniques and challenges in ferroelectric AlScN thin films for next-generation electronic devices

Moore and More

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Moore and More 2025年第1期2卷 135-149页

作者： Xiaoxi Li Yuan Fang Yuchun Li Zhifan Wu Shuqi Huang Yingguo Yang Bitao Dong Gengsheng Chen Yue Hao Genquan Han Hangzhou Institute of Technology Xidian UniversityHangzhou 311200China School of Microelectronics Xidian UniversityXi’an 710071China State Key Laboratory of ASIC and System Shanghai Institute of Intelligent Electronics&SystemsSchool of MicroelectronicsFudan UniversityShanghai 200433China Shanghai Synchrotron Radiation Facility(SSRF) Shanghai Institute of Applied Physics&Shanghai Advanced Research InstituteChinese Academy of SciencesShanghai 201208China Division of Solid State Physics Department of Materials Sciences and EngineeringAngstrom LaboratoryUppsala University75105 UppsalaSweden

The discovery of ferroelectricity in aluminum scandium nitride(AlScN)thin films has garnered significant research inter-est,owing to the large remnant polarization,tunable coercive field,excellent thermal stability,high breakdown field,and compatibility with back-end-of-line processes of these thin *** attributes make AlScN a highly promising can-didate for next-generation electronic device *** techniques,such as reactive magnetron sputtering,radi-ofrequency sputtering,molecular beam epitaxy,metal-organic chemical vapor deposition,and pulsed laser deposition,have been employed to grow ferroelectric AlScN thin *** growth parameters,including deposition atmosphere,precursor selection,and Sc concentration,strongly influence the ferroelectric properties,playing a crucial role in achieving high crystalline *** review critically examines the fabrication techniques used for producing ferroelectric AlScN thin films,focusing on the impact of different growth methods and process conditions on their *** aim to provide comprehensive guidance to assist future researchers in optimizing their process parameters to achieve the desired ferroelectric characteristics in AlScN thin films.

关键词： AlScN Wurtzite Ferroelectric Growth technique

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Millimeter-Wave AlGaN/GaN HEMTs on Si Operated at 12V and its modeling for 5G Handset Applications

Millimeter-Wave AlGaN/GaN HEMTs on Si Operated at 12V and it...

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Cross Strait Quad-Regional Radio Science and Wireless Technology Conference (CSRWTC)

作者： Zhen-Tao Wei Dong-Sheng Liu Wei Huang David Wei Zhang Liang Li Hong-Ping Ma State Key Laboratory of ASIC and System Shanghai Institute of Intelligent Electronics & Systems School of Microelectronics Fudan University Shanghai China School of electronic information engineering Suzhou Vocational University Suzhou China Fudan Univ Acad Engn & Technol Shanghai China

In this paper, a RF AlGaN/GaN high electron mobility transistor (HEMT) based on low voltage application of 5G RF handset, firstly fabricated on high-resistive silicon substrate is introduced, which uses Ni/Au as T-shaped gate structure and double-layer silicide as surface medium. The maximum output current density of the device is 1.07 A/mm at V ds = 12 V and V gs = 2 V. f T = 27.8 GHz and BV (the breakdown voltage) = 35 V/µm are obtained for the 180-nm gate-length device with 1-µm source-to-gate spacing.

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The Effects of $\gamma$ Radiation-Induced Trapped Charges on Single Event Transient in DSOI Technology

The Effects of $\gamma$ Radiation-Induced Trapped Charges on...

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Annual International Symposium on Reliability Physics

作者： Yuchong Wang Siyuan Chen Fanyu Liu Bo Li Jiangjiang Li Yang Huang Tiexin Zhang Xu Zhang Zhengsheng Han Tianchun Ye Jing Wan Key Laboratory of Science and Technology on Silicon Devices Chinese Academy of Sciences Institute of Microelectronics Chinese Academy of Sciences University of Chinese Academy of Sciences Beijing China State key lab of ASIC and System School of Information Science and Technology Fudan University Shanghai China

The effects of $\gamma$ radiation-induced positive trapped charges in the top buried oxide layer $\boldsymbol{(\mathrm{Q}_{\text{BOX}1})}$ on the single event transient (SET) response of Double Silicon-On-Insulator (DSOI) transistors are examined for the first time through $\gamma$ radiation and pulsed laser experiments. After $\gamma$ radiation, a significant negative shift of threshold voltage for back-channel is observed for both DSOI NMOS and PMOS due to the $\mathrm{Q}_{\text{BO}\mathrm{X}1}$ . The SET current was measured at the device level, and the SET current peak and full width at half maximum (FWHM) were calculated. The impact of $\boldsymbol{\mathrm{Q}_{\text{BOX}1}}$ and back-gate bias on the SET current of the DSOI devices are analyzed in detail. The experiments demonstrate that the SET current of NMOS is enhanced due to the parasitic bipolar transistor (PBT) effect activated by $\boldsymbol{\mathrm{Q}_{\text{BOX}1}}$ , which can be mitigated by applying a dynamic back-gate bias. However, the $\boldsymbol{\mathrm{Q}_{\text{BOX}1}}$ inhibits the SET current and PBT for DSOI PMOS. TCAD simulations further validate this physical mechanism, and then the back-gate bias strategy is proposed for DSOI devices and circuits.

关键词： Single event transients Bipolar transistors Sensitivity Space technology Silicon-on-insulator Threshold voltage Transistors

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Temperature-switching logic in MoS2 single transistors

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Chinese Physics B 2020年第9期29卷 464-469页

作者： Xiaozhang Chen Lehua Gu Lan Liu Huawei Chen Jingyu Li Chunsen Liu Peng Zhou The State Key Laboratory of ASIC and System Department of MicroelectronicsFudan UniversityShanghai 200433China Department of Physics State Key Laboratory of Surface PhysicsKey Laboratory of Micro and Nano Photonic Structures(Ministry of Education)and Institute for Nanoelectronic Devices and Quantum ComputingFudan UniversityShanghai 200433China School of Computer Science Fudan UniversityShanghai 200433China

Due to their unique characteristics,two-dimensional(2D)materials have drawn great attention as promising candidates for the next generation of integrated circuits,which generate a calculation unit with a new working mechanism,called a logic *** figure out the application prospects of logic transistors,exploring the temperature dependence of logic characteristics is *** this work,we explore the temperature effect on the electrical characteristic of a logic transistor,finding that changes in temperature cause transformation in the calculation:logical output converts from‘AND’at 10 K to‘OR’at 250 *** transformation phenomenon of temperature regulation in logical output is caused by energy band which decreases with increasing *** the experiment,the indirect band gap of MoS2 shows an obvious decrease from 1.581 eV to 1.535 eV as the temperature increases from 10 K to 250 *** change of threshold voltage with temperature is consistent with the energy band,which confirms the theoretical ***,as a promising material for future integrated circuits,the demonstrated characteristic of 2D transistors suggests possible application for future functional devices.

关键词： molybdenum disulfide(MoS2) logic temperature dependence mobility

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Nonvolatile Reconfigurable Phase-change-materials Integrated Silicon Photonics

Nonvolatile Reconfigurable Phase-change-materials Integrated...

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2024 Photonics and Electromagnetics Research Symposium, PIERS 2024

作者： Xu, Kai Wei, Maoliang Tang, Bo Li, Junying Yun, Yiting Lei, Kunhao Wu, Yingchun Li, Lan Lin, Hongtao Zhejiang University State Key Laboratory of Modern Optical Instrumentation Key Laboratory of Micro-Nano Electronics and Smart System of Zhejiang Province College of Information Science and Electronic Engineering Hangzhou China Institute of Microelectronics of the Chinese Academy of Sciences Beijing China University of Chinese Academy of Sciences Hangzhou Institute for Advanced Study Hangzhou China Westlake University Key Laboratory of 3D Micro/Nano Fabrication and Characterization of Zhejiang Province School of Engineering Hangzhou China Westlake Institute for Advanced Study Institute of Advanced Technology Hangzhou China

ISBN: (纸本)9798350375909

The emergence of integrated photonic technology provides an attractive solution of high speed, broad bandwidth and strong parallelism for large-scale information transmission and processing in interconnection, communication and computing. Reconfigurability is necessary for photonic processors to adapt varieties of application scenarios in the fields of data exchange, microwave photonics and neural networks. As yet, thermo-optical effect and carrier plasma dispersion effect are the most common phenomena for optical modulation. However, the volatility not only requires continuous power supply to maintain the devices' state, but also accompanies with serious thermal crosstalk induced by active regions. Hence, the nonvolatile methods that can reconfigure and fix on the current state for a long time after a single external excitation are considered as one of the significant technologies in the next generation of integrated photonics. Nonvolatile reconfiguration has been achieved through trapped-charge effect, bistable micro-electromechanical system (MEMS) with nano-latch mechanism and ferroelectric materials, which suffer from high loss, lower stability and complex process flow. Chalcogenide phase change materials (PCM) have become a promising method to realize compact and nonvolatile reconfigurable integrated photonic devices due to the high optical constant contrast between amorphous state and crystalline state, superiorly stable property and low temperature deposition possibility. Here, we developed a monolithic back-end-of-line integration technology of PCM in silicon photonics, supporting "Zero-change"heterogeneous integration platform at wafer scale. On this basis, nonvolatile integrated photonic devices with excellent performance have been fabricated. It lays a foundation for improving the energy efficiency and integration density of integrated photonic processors and suppressing thermal crosstalk between integrated photonic devices. © 2024 IEEE.

关键词： Silicon wafers

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Graphene-based dual-function acoustic transducers for machine learning-assisted human-robot interfaces

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InfoMat 2023年第2期5卷 66-79页

作者： Hao Sun Xin Gao Liang-Yan Guo Lu-Qi Tao Zi Hao Guo Yangshi Shao Tianrui Cui Yi Yang Xiong Pu Tian-Ling Ren Institute of Microelectronics and Beijing National Research Center for Information Science and Technology(BNRist) Tsinghua UniversityBeijingPeople's Republic of China CAS Center for Excellence in Nanoscience Beijing Key Laboratory of Micro-nano Energy and SensorBeijing Institute of Nanoenergy and NanosystemsChinese Academy of SciencesBeijingPeople's Republic of China State Key Laboratory of Power Transmission Equipment and System Security and New Technology School of Electrical EngineeringChongqing UniversityChongqingPeople's Republic of China School of Computer Science&Technology Beijing Institute of TechnologyBeijingPeople's Republic of China School of Automation and Electrical Engineering University of Science and Technology BeijingBeijingPeople's Republic of China

Human–robot interface(HRI)electronics are critical for realizing robotic ***,we report graphene-based dual-function acoustic transducers for machine learning-assisted human–robot interfaces(GHRI).The GHRI functions both an artificial ear through the triboelectric acoustic sensing mechanism and an artificial mouth through the thermoacoustic sound emission *** success of the integrated device is also attributed to the multifunctional laser-induced graphene,as either triboelectric materials,electrodes,or thermoacoustic *** systematically optimizing the structure parameters,the GHRI achieves high sensitivity(4500 mV Pa^(–1))and operating durability(1000000 cycles and 60 days),capable of recognizing speech identities,emotions,content,and other information in the human *** the assistance of machine learning,30 speech categories are trained by a convolutional neural network,and the accuracy reaches 99.66%and 96.63%in training datasets and test ***,GHRI is used for artificial intelligence communication based on recognized speech *** work shows broad prospects for the development of robotic intelligence.

关键词： human-robot interface laser-induced graphene machine learning thermoacoustic triboelectric nanogenerator

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Dual Al₂O₃/Hf₀.₅Zr₀.₅O₂ Stack Thin Films for Improved Ferroelectricity and Reliability

IEEE Electron Device Letters

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IEEE Electron Device Letters 2022年第8期43卷 1235-1238页

作者： Yu-Chun Li Xiao-Xi Li Mao-Kun Wu Bo-Yao Cui Xue-Pei Wang Teng Huang Ze-Yu Gu Zhi-Gang Ji Ying-Guo Yang David Wei Zhang Hong-Liang Lu State Key Laboratory of ASIC and System School of Microelectronics Shanghai Institute of Intelligent Electronics and Systems Fudan University Shanghai China Department of Micro/Nano Electronics Shanghai Jiao Tong University Shanghai China

In this letter, a dual Al 2 O 3 /Hf 0.5 Zr 0.5 O 2 (HZO) stack structure ferroelectric (FE) capacitor was designed and fabricated. It is found that the dielectric (DE) Al 2 O 3 thin film at the middle position of FE HZO thin films could apparently affect the behaviors of the oxygen vacancies at DE/FE interface and the electric field distribution, thereby affecting the corresponding ferroelectricity and reliability. By modulating the thickness of Al 2 O 3 middle layer (ML), it is demonstrated that the FE capacitor with 1 nm Al 2 O 3 ML exhibits better FE and cycling properties, including wake-up free, weaker fatigue effect, and robust endurance. Specifically, the device performs a considerable remnant polarization ( $2{P}_{\mathrm {r}}$ ) of $36.2 ~\mu \text{C}$ /cm 2 with a coercive electric field ( $2{E}_{\mathrm {c}}$ ) of 2.7 MV and $2{P}_{\mathrm {r}} > 20 ~\mu \text{C}$ /cm 2 after 10 10 cycles at 3 MV/cm. This work paves the pathway to optimize the ferroelectricity and reliability for future FE application.

关键词： Capacitors Reliability Fatigue Electric fields Zirconium Iron Hafnium oxide

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