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Journal of Semiconductors 2020年第2期41卷 14-19页

作者： Zhengjie Li Yufan Zhang Jian Wang Jinmei Lai State Key Lab of ASIC and System School of Microelectronics Fudan University

FPGA is an appealing platform to accelerate *** survey a range of FPGA chip designs for *** DSP module,one type of design is to support low-precision operation,such as 9-bit or 4-bit *** other type of design of DSP is to support floating point multiply-accumulates(MACs),which guarantee high-accuracy of *** ALM(adaptive logic module)module,one type of design is to support low-precision MACs,three modifications of ALM includes extra carry chain,or 4-bit adder,or shadow multipliers which increase the density of on-chip MAC *** other enhancement of ALM or CLB(configurable logic block)is to support BNN(binarized neural network)which is ultra-reduced precision version of *** memory modules which can store weights and activations of DNN,three types of memory are proposed which are embedded memory,in-package HBM(high bandwidth memory)and off-chip memory interfaces,such as DDR4/*** designs are new architecture and specialized AI *** ACAP in 7 nm is the first industry adaptive compute acceleration *** AI engine can provide up to 8X silicon compute *** AgileX in 10 nm works coherently with Intel own CPU,which increase computation performance,reduced overhead and latency.

关键词： FPGA DNN Low-precision DSP CLB ALM

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A Completely Blind Video Quality Evaluator

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IEEE Signal Processing Letters 2022年 29卷 2228-2232页

作者： Qi Zheng Zhengzhong Tu Xiaoyang Zeng Alan C. Bovik Yibo Fan State Key Laboratory of ASIC & System College of Microelectronics Fudan University Shanghai China Laboratory for Image and Video Engineering (LIVE) Department of Electrical and Computer Engineering The University of Texas at Austin Austin TX USA

Automatic video quality assessment of user-generated content (UGC) has gained increased interest recently, due to the ubiquity of shared video clips uploaded and circulated on social media platforms across the globe. Most existing video quality models developed for this vast content are trained on large numbers of samples labeled during large-scale subjective studies, which are often fail to exhibit adequate generalization abilities on unseen data. Thus, it is also desirable to develop opinion-unaware, “completely blind” video quality models, that are free of training, yet can compete with existing learning-based models. Here we propose such a model called VIQE (VIdeo Quality Evaluator), which we designed based on a comprehensive analysis of patch- and frame-wise video statistics, as well as of space-time statistical regularities of videos. The statistical features desired from the analysis capture complementary predictive aspects of perceptual quality, which are aggregated to obtain final video quality scores. Extensive experiments on recent large-scale video quality databases demonstrate that VIQE is even competitive with state-of-the-art opinion-aware models. The source code is being made available at https://***/uniqzheng/VIQE .

关键词： Video recording Quality assessment Feature extraction Computational modeling Streaming media Distortion Distortion measurement

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CS-MCNet: A Video Compressive Sensing Reconstruction Network with Interpretable Motion Compensation 15th

CS-MCNet: A Video Compressive Sensing Reconstruction Network...

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15th Asian Conference on Computer Vision, ACCV 2020

作者： Huang, Bowen Zhou, Jinjia Yan, Xiao Jing, Ming’e Wan, Rentao Fan, Yibo State Key Laboratory of ASIC and System Fudan University Shanghai China Graduate School of Science and Engineering Hosei University Tokyo Japan JST PRESTO Tokyo Japan

ISBN: (纸本)9783030695316

In this paper, a deep neural network with interpretable motion compensation called CS-MCNet is proposed to realize high-quality and real-time decoding of video compressive sensing. Firstly, explicit multi-hypothesis motion compensation is applied in our network to extract correlation information of adjacent frames (as shown in Fig. 1), which improves the recover performance. And then, a residual module further narrows down the gap between reconstruction result and original signal. The overall architecture is interpretable by using algorithm unrolling, which brings the benefits of being able to transfer prior knowledge about the conventional algorithms. As a result, a PSNR of 22 dB can be achieved at 64x compression ratio, which is about 4 % to 9 % better than state-of-the-art methods. In addition, due to the feed-forward architecture, the reconstruction can be processed by our network in real time and up to three orders of magnitude faster than traditional iterative methods. © 2021, Springer Nature Switzerland AG.

关键词： Motion compensation

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Defect Physics of Ternary Semiconductor ZnGeP2 with a High Density of Anion-Cation Antisites: A First-Principles Study

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Physical Review Applied 2021年第2期15卷 024035-024035页

作者： Menglin Huang Shan-Shan Wang Yu-Ning Wu Shiyou Chen Key Laboratory of Polar Materials and Devices (MOE) East China Normal University Shanghai 200241 China State Key Laboratory of ASIC and System School of Microelectronics Fudan University Shanghai 200433 China

Anion-cation antisite defects usually have low density in the group III-V (e.g., GaN) and II−IV−V2 (ZnGeN2, ZnSnP2) semiconductors, and thus, have not drawn enough attention in defect studies of ZnGeP2 since 1976. However, our first-principles calculations based on a hybrid functional show that the anion-cation antisite defects (GeP and PGe) can have very high density (1017−1018cm−3), making them the dominant defects in ZnGeP2. Their calculated photoluminescence (PL) spectra agree well with the 1.4 and 1.6 eV PL peaks observed experimentally, indicating that they may be the origin of defects, which challenges previous assumptions that the P vacancy ($V_{\rm{P}}$) defect is responsible for the two PL peaks. Although the anion-cation antisites (GeP and PGe) and cation-cation antisites (GeZn and ZnGe) both have densities as high as 1017cm−3, ZnGeP2 suffers from serious donor-acceptor compensation, which results in a low carrier density (below 1010cm−3), and thus, poor electrical conductivity. These results explain the mysterious observation that ZnGeP2 crystals grown using different methods have a high defect density, but low carrier density and high resistivity, and also indicate that it is challenging to suppress the defect-induced optical absorption in the development of high-power ZnGeP2-based optical devices.

关键词： Luminescence Optoelectronics Point defects Disordered systems Optical materials & elements Semiconductor compounds Density functional calculations Hybrid functionals

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Spectrum projection with a bandgap-gradient perovskite cell for colour perception

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Light(Science & Applications) 2020年第1期9卷 466-478页

作者： Mei-Na Zhang Xiaohan Wu Antoine Riaud Xiao-Lin Wang Fengxian Xie Wen-Jun Liu Yongfeng Mei David Wei Zhang Shi-Jin Ding State Key Laboratory of ASIC and System School of MicroelectronicsFudan UniversityShanghai 200433China Engineering Research Centre of Advanced Lighting Technology Ministry of EducationFudan UniversityShanghai 200433China Department of Materials Science Fudan UniversityShanghai 200433China

Optoelectronic devices for light or spectral signal detection are desired for use in a wide range of applications,including sensing,imaging,optical communications,and in situ ***,existing photodetectors indicate only light intensities,whereas multiphotosensor spectrometers require at least a chip-level assembly and can generate redundant signals for applications that do not need detailed spectral *** by human visual and psychological light perceptions,the compression of spectral information into representative intensities and colours may simplify spectrum processing at the device ***,we propose a concept of spectrum projection using a bandgap-gradient semiconductor cell for intensity and colour ***-gradient perovskites,prepared by a halide-exchanging method via dipping in a solution,are developed as the photoactive layer of the *** fabricated cell produces two output signals:one shows linear responses to both photon energy and flux,while the other depends on only photon ***,by combining the two signals,the single device can project the monochromatic and broadband spectra into the total photon fluxes and average photon energies(i.e.,intensities and hues),which are in good agreement with those obtained from a commercial photodetector and *** changing illumination in real time,the prepared device can instantaneously provide intensity and hue *** addition,the flexibility and chemical/bio-sensing of the device via colour comparison are ***,this work shows a human visual-like method of spectrum projection and colour perception based on a single device,providing a paradigm for high-efficiency spectrum-processing applications.

关键词： projection perovskite gradient

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Selective Manipulation with Spiraling Transducer Acoustical Tweezers 16

Selective Manipulation with Spiraling Transducer Acoustical ...

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16th IEEE International Conference on Solid-state and Integrated Circuit Technology, ICSICT 2022

作者： Lin, Siying Zhou, Jia Riaud, Antoine Baudoin, Michael Gong, Zhixiong Berthet, Nicolars Fudan University State Key Laboratory of Asic and System School of Microelectronics Shanghai200433 China Universite de Lille Cnrs Centrale Lille Isen Universite Polytechnique des Hauts-de-France LilleF-59000 France Discovery and Molecular Characterization of Pathogens The Center for Microbes Development and Health Institut Pasteur of Shanghai - Chinese Academy of Sciences Shanghai200031 China

ISBN: (数字)9781665469067

ISBN: (纸本)9781665469067

Microfluidics is fast becoming a critical technology for medicine and biology for its many important applications, e.g. precision medicine, single-cell sequencing and the manipulation of microparticles/droplets. Acoustic trapping technologies have received significant attention in microfluidics. Optical and magnetic tweezers have stringent limitations to manipulate cells. Acoustic tweezers based on spiraling interdigitated transducers (IDTs) are label-free, contactless and biocompatible, with excellent selectivity and manipulation strength. In our paper, we have developed flat, compact, focalized acoustical tweezers to manipulate cells/particles in 3D manipulation. These tweezers rely on focalized acoustical vortexes on a flat piezoelectric substrate. These tweezers' unique 2D selective manipulation through manipulating microparticles/cells/droplets, their simplicity, high biocompatibility and selective manipulation open tremendous perspectives in microbiology, microrobotics, and microscopy. © 2022 IEEE.

关键词： Biocompatibility

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Unveiling the origin of anomalous low-frequency Raman mode in CVD-grown monolayer WS_(2)

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Nano Research 2021年第11期14卷 4314-4320页

作者： Qian Xiang Xiaofei Yue Yanlong Wang Bin Du Jiajun Chen Shaoqian Zhang Gang Li Chunxiao Cong Ting Yu Qingwei Li Yuqi Jin Key Laboratory of Chemical Lasers Dalian Institute of Chemical PhysicsChinese Academy of SciencesDalian116023China State Key Laboratory of ASIC&System School of Information Science and TechnologyFudan UniversityShanghai200433China School of Materials Science and Engineering Xi’an Polytechnic UniversityXi’an710048China Division of Physics and Applied Physics School of Physical and Mathematical SciencesNanyang Technological University637371SingaporeSingapore University of Chinese Academy of Sciences Beijing100049China

Substrates provide the necessary support for scientific explorations of numerous promising features and exciting potential applications in two-dimensional (2D) transition metal dichalcogenides (TMDs). To utilize substrate engineering to alter the properties of 2D TMDs and avoid introducing unwanted adverse effects, various experimental techniques, such as high-frequency Raman spectroscopy, have been used to understand the interactions between 2D TMDs and substrates. However, sample-substrate interaction in 2D TMDs is not yet fully understood due to the lack of systematic studies by techniques that are sensitive to 2D TMD-substrate interaction. This work systematically investigates the interaction between tungsten disulfide (WS_(2)) monolayers and substrates by low-frequency Raman spectroscopy, which is very sensitive to WS_(2)-substrate interaction. Strong coupling with substrates is clearly revealed in chemical vapor deposition (CVD)-grown monolayer WS_(2) by its low-wavenumber interface mode. It is demonstrated that the enhanced sample-substrate interaction leads to tensile strain on monolayer WS_(2), which is induced during the cooling process of CVD growth and could be released for monolayer WS_(2) sample after transfer or fabricated by an annealing-free method such as mechanical exfoliation. These results not only suggest the effectiveness of low-frequency Raman spectroscopy for probing sample-substrate interactions in 2D TMDs, but also provide guidance for the design of high-performance devices with the desired sample-substrate coupling strength based on 2D TMDs.

关键词： interface mode monolayer tungsten disulfide low-frequency Raman spectroscopy sample-substrate interaction strain chemical vapor deposition

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HfZrOₓ-Based Ferroelectric Tunnel Junction With Crested Symmetric Band Structure Engineering

IEEE Electron Device Letters

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IEEE Electron Device Letters 2021年第9期42卷 1311-1314页

作者： Yilun Liu Yuanyuan Cao Hao Zhu Li Ji Lin Chen Qingqing Sun David Wei Zhang State Key Laboratory of ASIC and System School of Microelectronics Fudan University Shanghai China National Integrated Circuit Innovation Center Shanghai China

HfO 2 -based ferroelectric tunnel junction (FTJ) devices have been studied as an attractive candidate in future CMOS-compatible ultra-low-power non-volatile memory techniques. However, the relatively low remnant polarization in the HfO 2 -based thin films are still to be enhanced for further device implementation. Here, we propose an engineered FTJ device with crested symmetric band structure utilizing ZrO 2 as the seed layer and capping layer to sandwich the Zr-doped HfO 2 (HZO) film. An ultra-thin Al 2 O 3 layer is inserted in HZO which further improves the remnant polarization reaching up to 24.2 μC/cm 2 . The optimized FTJ devices exhibit larger tunneling electrical resistance ratio and higher read and write operation endurance. This illustrates a promising pathway to boost the ferroelectricity in HZO film by structure engineering and can be instructive for practical device applications.

关键词： Tunneling Films Resistance Junctions Electric fields Dielectrics Electrodes

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Memory materials and devices:From concept to application

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InfoMat 2020年第2期2卷 261-290页

作者： Zhenhan Zhang Zongwei Wang Tuo Shi Chong Bi Feng Rao Yimao Cai Qi Liu Huaqiang Wu Peng Zhou State Key Laboratory of ASIC and System School of MicroelectronicsFudan UniversityShanghaiChina Key Laboratory of Microelectronic Devices and Circuits(MOE) Institute of MicroelectronicsPeking UniversityBeijingChina Key Laboratory of Microelectronic Devices and Integrated Technology Institute of MicroelectronicsChinese Academy of SciencesBeijingChina College of Materials Science and Engineering Shenzhen UniversityShenzhenChina Institute of Microelectronics Tsinghua UniversityBeijingChina

Memory cells have always been an important element of information *** emerging technologies like big data and cloud computing,the scale and complexity of data storage has reached an unprecedented peak with a much higher requirement for memory *** is well known,better data storage is mostly achieved by ***,as the size of the memory device is reduced,a series of problems,such as drain gate-induced leakage,greatly hinder the performance of memory *** meet the increasing demands of information technology,novel and high-performance memory is urgently ***,emerging memory technologies are expected to improve memory performance and drive the information *** review will focus on the progress of several emerging memory technologies,including two-dimensional material-based memories,resistance random access memory(RRAM),magnetic random access memory(MRAM),and phasechange random access memory(PCRAM).Advantages,mechanisms,and applications of these diverse memory technologies will be discussed in this review.

关键词： memory MRAM PCRAM RRAM two-dimensional material

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A Generalized tunneling current formula for metal/insulator heterojunctions under large bias and finite temperature

arXiv

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arXiv 2021年

作者： Cai, Zenghua Huang, Menglin Zhou, Peng Chen, Shiyou State Key Laboratory of ASIC and System School of Microelectronics Fudan University Shanghai China Fudan University Shanghai China

The Fowler-Nordheim tunneling current formula has been widely used in the design of devices based on metal/insulator (metal/semiconductor) heterojunctions with triangle potential barriers, such as the flash memory. Here we adopt the model that was used to derive the Landauer formula at finite temperature, the nearly-free electron approximation to describe the electronic states in semi-infinite metal electrode and the Wentzel-Kramers-Brillouin (WKB) approximation to describe the transmission coefficient, and derive a tunneling current formula for metal/insulator heterojunctions under large bias and electric field. In contrast to the Fowler-Nordheim formula which is the limit at zero temperature, our formula is generalized to the finite temperature (with the thermal excitation of electrons in metal electrode considered) and the potential barriers beyond triangle ones, which may be used for the design of more complicated heterojunction devices based on the carrier tunneling. © 2021, CC BY-NC-ND.

关键词： Electron tunneling

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