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Two-dimensional materials for future information technology: status and prospects

Science China(Information Sciences) 2024年第6期67卷 1-147页

作者： Hao QIU Zhihao YU Tiange ZHAO Qi ZHANG Mingsheng XU Peifeng LI Taotao LI Wenzhong BAO Yang CHAI Shula CHEN Yiqi CHEN Hui-Ming CHENG Daoxin DAI Zengfeng DI Zhuo DONG Xidong DUAN Yuhan FENG Yu FU Jingshu GUO Pengwen GUO Yue HAO Jun HE Xiao HE Jingyi HU Weida HU Zehua HU Xinyue HUANG Ziyang HUANG Ali IMRAN Ziqiang KONG Jia LI Qian LI Weisheng LI Lei LIAO Bilu LIU Can LIU Chunsen LIU Guanyu LIU Kaihui LIU Liwei LIU Sheng LIU Yuan LIU Donglin LU Likuan MA Feng MIAO Zhenhua NI Jing NING Anlian PAN Tian-Ling REN Haowen SHU Litao SUN Yue SUN Quanyang TAO Zi-Ao TIAN Dong WANG Hao WANG Haomin WANG Jialong WANG Junyong WANG Wenhui WANG Xingjun WANG Yeliang WANG Yuwei WANG Zhenyu WANG Yao WE... Department of Applied Physics The Hong Kong Polytechnic University Key Laboratory for Micro-Nano Physics and Technology of Hunan Province College of Materials Science and EngineeringHunan University College of Integrated Circuits Zhejiang University Shenzhen Geim Graphene Center Shenzhen Key Laboratory of Layered Materials for Value-Added ApplicationsTsinghua-Berkeley Shenzhen Institute & Institute of Materials ResearchTsinghua Shenzhen International Graduate SchoolTsinghua University State Key Laboratory of Extreme Photonics and Instrumentation College of Optical Science and EngineeringInternational Research Center for Advanced PhotonicsZijingang CampusZhejiang University National Key Laboratory of Materials for Integrated Circuits Shanghai Institute of Microsystem and Information TechnologyChinese Academy of Sciences CAS Key Laboratory of Nanophotonic Materials and Devices & Key Laboratory of Nanodevices and Applications i-LabSuzhou Institute of Nano-Tech and Nano-Bionics (SINANO)Chinese Academy of Sciences College of Chemistry and Chemical Engineering Hunan University Key Laboratory of Quantum State Construction and Manipulation (Ministry of Education) Department of PhysicsRenmin University of China School of Integrated Circuits Beijing National Research Center for Information Science and Technology (BNRist)Tsinghua University School of Electronic Science and Engineering Nanjing University The State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology Shaanxi Joint Key Laboratory of GrapheneSchool of MicroelectronicsXidian University Key Laboratory of Artificial Micro- and Nano-Structures of Ministry of Education School of Physics and TechnologyWuhan University School of Integrated Circuits Huazhong University of Science and Technology Center for Nanochemistry (CNC) Beijing Science and Engineering Center for NanocarbonsBeijing National Laboratory for Molecular SciencesCollege of Chemistry and Molecular EngineeringPeking University State Key Laboratory for Artificial Microstruct

Over the past 70 years, the semiconductor industry has undergone transformative changes,largely driven by the miniaturization of devices and the integration of innovative structures and materials. Two-dimensional(2D) materials like transition metal dichalcogenides(TMDs) and graphene are pivotal in overcoming the limitations of silicon-based technologies, offering innovative approaches in transistor design and functionality, enabling atomic-thin channel transistors and monolithic 3D integration. We review the important progress in the application of 2D materials in future information technology, focusing in particular on microelectronics and optoelectronics. We comprehensively summarize the key advancements across material production, characterization metrology, electronic devices, optoelectronic devices, and heterogeneous integration on silicon. A strategic roadmap and key challenges for the transition of 2D materials from basic research to industrial development are outlined. To facilitate such a transition, key technologies and tools dedicated to 2D materials must be developed to meet industrial standards, and the employment of AI in material growth, characterizations, and circuit design will be essential. It is time for academia to actively engage with industry to drive the next 10 years of 2D material research.

关键词： two-dimensional (2D) materials information technology production technology standardization of characterization microelectronic devices optoelectronic devices multi-functional integration

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Investigation of the Structural, Electronic, Optical, and Interface Properties of the Two-Dimensional Dion-Jacobson Perovskite BDA(MA)Mg2I7 for Lead-Free Solar Cells using Density Functional Theory

Investigation of the Structural, Electronic, Optical, and In...

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New Energy and Power Engineering (ICNEPE), International Conference on

作者： Aboubacar Traore Xing Li Cai Molang State Key Laboratory of Alternate Electrical Power System With Renewable Energy Sources Beijing Key Laboratory of Novel Thin-Film Solar Cells School of New Energy North China Electric Power University Beijing China Institute of Microelectronics Chinese Academy of Sciences Beijing China

ISBN: (数字)9798331516086

ISBN: (纸本)9798331516093

Two-dimensional (2D) Dion-Jacobson (DJ) perovskites are known for their exceptional optical properties and superior stability, surpassing those of traditional three-dimensional (3D) perovskites. However, the toxicity and instability of lead-based (Pb 2+ ) perovskites raise growing environmental concerns, creating an urgent need to develop lead-free alternatives with tunable optoelectronic properties for safer and more efficient solar cells. In this study, we present the novel DJ perovskite BDA(MA)Mg₂I₇, where magnesium (Mg 2+ ) substitutes Pb 2+ , and we investigate its structural, optoelectronic, and interface properties using density functional theory (DFT). The analysis reveals a monoclinic 7PC structure with outstanding structural and thermodynamic stability, supported by favourable cohesive and formation energies. BDA(MA)Mg 2 I 7 exhibits a direct bandgap of 1.12 eV, with a work function of 4.17 eV and an electron affinity of 3.61 eV, placing it within the theoretical power conversion efficiency (PCE) range exceeding 28%, as defined by the Shockley-Queisser (SQ) limit. Additionally, the material demonstrates strong light absorption, with an absorption coefficient of 4.10 4 cm 1 and low reflectivity. The low effective masses of electrons (0.014 m e ) and holes (0.10 m e ), combined with a low exciton binding energy (14 meV), enhance charge separation efficiency. These results position BDA(MA)Mg 2 I 7 as a promising, environmentally friendly alternative to lead-based perovskites.

关键词： Integrated optics Thermodynamics Excitons Absorption Photovoltaic cells Electron optics Perovskites Stability analysis Optical reflection Effective mass

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Manipulating the Electrical Characteristics of Two-Dimensional Semiconductor Transistors by Gate Engineering

Manipulating the Electrical Characteristics of Two-Dimension...

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IEEE Electron Devices Technology and Manufacturing Conference (EDTM)

作者： Jingyi Ma Ling Tong Xiaojiao Guo Xinyu Chen Minxing Zhang Chenjian Wu Wenzhong Bao State Key Laboratory of ASIC and System School of Microelectronics Fudan University Shanghai China School of Electronic Information Soochow University Suzhou China

Various methods have been investigated to manipulate the electrical properties of Mos2 transistors to achieve applicable logic levels, which are essential for integrated multistage logic circuits. A doping-free strategy by using metal gates with different work functions is demonstrated to modulate threshold voltage VTH, which is critical for optimizing the matching levels of electrical properties. The optimized inverters show controllable inverter threshold voltages from 0.2 V to 0.6 V and the obtained voltage gain is over 35.

关键词： Performance evaluation Logic circuits Metals Logic gates Threshold voltage Inverters Transistors

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Enhanced Pyroelectric Response in Quenched BNT-Based Lead-Free Ferroelectrics for Uncooled Infrared Detection

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Advanced Functional Materials 2025年

作者： Shen, Meng Zhang, Xian Cen, Fangjie Zhang, Qingfeng Zhang, Haibo Zhang, Guangzu Jiang, Shenglin Chen, Yong Hu, Yongming Yao, Kui Hubei Key Laboratory of Micro-Nanoelectronic Materials and Devices Key Laboratory of Intelligent Sensing System and Security of Ministry of Education and School of Microelectronics Hubei University Wuhan430062 China School of Integrated Circuits Engineering Research Center for Functional Ceramics MOE and Wuhan National Laboratory for Optoelectronics Huazhong University of Science and Technology Wuhan430074 China Ministry of Education Key Laboratory of Green Preparation and Application for Functional Materials Hubei Key Laboratory of Micro-Nanoelectronic Materials and Devices Hubei Key Laboratory of Polymer Materials School of Materials Science & Engineering Hubei University Wuhan430062 China School of Materials Science and Engineering State Key Laboratory of Material Processing and Die & Mould Technology Huazhong University of Science and Technology Wuhan430074 China Singapore138634 Singapore

Excellent pyroelectric performance in environmentally friendly lead-free ferroelectrics is highly demanded for uncooled infrared detector. However, the trade-off between room temperature pyroelectric coefficient (proom) and depolarization temperature (Td) remains a major challenge of lead-free ferroelectrics for their device applications. Herein, a superior proom of 13.8 × 10−4 C m−2 K−1 with high Td of 155 °C is achieved in quenched BNT-Fe/Mn-NBT sample. Oxygen vacancy engineering is proposed to solve the constraint between proom and Td in BNT-based ceramics. The local A/B site displacement and oxygen vacancies are constructed in the BNT-Fe/Mn-NBT perovskite structure by quenching treatment, resulting in larger lattice distortion and superior proom. Meanwhile, defect-induced inhomogeneous random field compensates the ferroelectric depolarization field and down-shifts the free energy well, maintaining high Td. The resulting pyroelectric infrared detector made from the high-performance quenched BNT-Fe/Mn-NBT generates the voltage responsivity of 5906 V W−1 and specific detection rate of 1.8 × 108 cm Hz1/2 W−1, which is comparable to the commercial RD-624 type PZT-based pyroelectric infrared detector. © 2025 Wiley-VCH GmbH.

关键词： Perovskite

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Cost-Effective Droplet Generator for Portable Bio-Applications

SSRN

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SSRN 2022年

作者： Du, Lin Li, Yuxin Wang, Jie Zhou, Zijian Jing, Dalei Zhou, Jia School of Mechanical Engineering University of Shanghai for Science and Technology Shanghai China School of Optical-Electrical and Computer Engineering University of Shanghai for Science and Technology Shanghai China State Key Laboratory of ASIC and System School of Microelectronics Fudan University Shanghai China

The division of aqueous samples conveniently into droplets is necessary for many biochemical and medical analysis applications. In this article, we propose the design of a cost-effective droplet generator for potential bio-chemical application, featuring two symmetric tubes. The new droplet generator revisits the relationship between capillary components and liquid flow rates. The size of generated droplets by prototype depends only on generator dimensions, without precisely needing to control external flow conditions or driving pressure. Even when the relative extreme difference in flow rate for generating nL level droplets is over 57.79%, and the relative standard deviation (RSD) of the volume of droplets is barely about 9.80%. A dropper working as a pressure resource is used to verify the rapidity and robustness of this principle of droplet generation, which shows great potential for a wide range of droplet-based applications. © 2022, The Authors. All rights reserved.

关键词： Cost effectiveness

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Facile synthesis of ironenickelecobalt ternary oxide(FNCO)mesoporous nanowires as electrode material for supercapacitor application

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Journal of Materiomics 2022年第1期8卷 221-228页

作者： Muhammad Usman Muhammad Tayyab Ahsan Sofia Javed Zeeshan Ali Yiqiang Zhan Irfan Ahmed Sajid Butt Mohammad Islam Asif Mahmood M.Aftab Akram School of Chemical and Materials Engineering National University of Sciences and Technology(NUST)Sector H-12Islamabad44000Pakistan Department of Materials Science and Engineering College of EngineeringPeking University100871BeijingChina State Key Laboratory of ASIC and System Center of Micro-Nano SystemSISTFudan UniversityShanghai200433China Department of Materials Science and Engineering Institute of Space TechnologyIslamabad44000Pakistan New Mexcico Institute of Mining&Technology SocorroNM 87801USA School of Chemical and Biomolecular Engineering The University of Sydney2006SydneyAustralia

Transition Metal Oxides have drawn significant attention due to their reversible chemical redox reaction and long-life *** agglomeration and shrinkage/expansion of transition metal oxides in the nanosize regime have a noticeable effect on their electrochemical *** in this work,mesoporous nanowires(NWs)with a typical composition of iron-nickel-cobalt ternary oxide(FNCO)are synthesized using a simple,facile and cost-effective hydrothermal process followed by furnace *** NWs are then extensively investigated as an electrode material for supercapacitor *** compare the electrochemical properties,nanowires of nickel-cobalt oxide(NCO),iron-cobalt oxide(FCO)and cobalt oxide(CO)were also produced by following the same *** FNCO NWs are found to overcome the shortcomings in the electrochemical energy storage devices by exhibiting higher values of specific capacitance(2197 Fg^(-1))and energy density(109 Whkg^(-1))at 1 Ag^(-1) current ***,the FNCO NWs also showed a cyclic charge/discharge stability of 96%even up to 20,000 ***,a FNCO//graphene asymmetric device,fabricated with FNCO NWs and graphene as positive and negative electrodes,respectively,which exhibit high energy density(47 Whkg^(-1)),power density(375 Wkg^(-1))and excellent capacitance retention(86%)after 15,000 cycles.

关键词： Electrochemistry Hydrothermal synthesis Nanowires Supercapacitor Transition metal oxides

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A 16-bit Arithmetic Logic Unit Design by Using Gate Diffusion Input 15

A 16-bit Arithmetic Logic Unit Design by Using Gate Diffusio...

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15th IEEE International Conference on Solid-state and Integrated Circuit Technology, ICSICT 2020

作者： Duanmu, Yihang Yang, Jianguo Li, Jinbao Xue, Xiaoyong Jing, Minge Zeng, Xiaoyang State Key Lab of Asic and System School of Microelectronics Fudan University Shanghai201203 China Zhejiang Lab Hangzhou China

ISBN: (纸本)9781728162355

Gate diffusion input (GDI) is a new technology of digital circuit design for low power. Compared with traditional CMOS technology, GDI technology can reduce the power consumption, the propagation delay and the circuit area. This work uses the GDI technology to build a 16-bit arithmetic logic unit (ALU) to perform logic operations (AND, OR, NAND and XOR), and math operations (addition, subtraction, adding 1 and subtracting 1), and finally compares it with traditional CMOS circuits. © 2020 IEEE.

关键词： Computer circuits

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FAVER: Blind Quality Prediction of Variable Frame Rate Videos

arXiv

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arXiv 2022年

作者： Zheng, Qi Tu, Zhengzhong Madhusudana, Pavan C. Zeng, Xiaoyang Bovik, Alan C. Fan, Yibo State Key Laboratory of ASIC & System College of Microelectronics Fudan University Shanghai200000 China Department of Electrical and Computer Engineering The University of Texas at Austin AustinTX78712 United States

Video quality assessment (VQA) remains an important and challenging problem that affects many applications at the widest scales. Recent advances in mobile devices and cloud computing techniques have made it possible to capture, process, and share high resolution, high frame rate (HFR) videos across the Internet nearly instantaneously. Being able to monitor and control the quality of these streamed videos can enable the delivery of more enjoyable content and perceptually optimized rate control. Accordingly, there is a pressing need to develop VQA models that can be deployed at enormous scales. While some recent effects have been applied to full-reference (FR) analysis of variable frame rate and HFR video quality, the development of no-reference (NR) VQA algorithms targeting frame rate variations has been little studied. Here, we propose a first-of-a-kind blind VQA model for evaluating HFR videos, which we dub the Framerate-Aware Video Evaluator w/o Reference (FAVER). FAVER uses extended models of spatial natural scene statistics that encompass space-time wavelet-decomposed video signals, to conduct efficient frame rate sensitive quality prediction. Our extensive experiments on several HFR video quality datasets show that FAVER outperforms other blind VQA algorithms at a reasonable computational cost. To facilitate reproducible research and public evaluation, an implementation of FAVER is being made freely available online: https://***/uniqzheng/ HFR-BVQA. © 2022, CC BY-NC-ND.

关键词： Bandpass filters

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Ground-state structures, electronic structure, transport properties and optical properties of Ca-based anti-Ruddlesden-Popper phase oxide perovskites

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Physical Review Materials 2022年第11期6卷 114601-114601页

作者： Dan Han Mao-Hua Du Menglin Huang Shizhe Wang Gang Tang Thomas Bein Hubert Ebert Department of Chemistry University of Munich Munich 81377 Germany Materials Science & Technology Division Oak Ridge National Laboratory Oak Ridge Tennessee 37831 USA State Key Laboratory of ASIC and System School of Microelectronics Fudan University Shanghai 200433 China Advanced Research Institute of Multidisciplinary Science Beijing Institute of Technology Beijing 100081 China

Anti-Ruddlesden-Popper (ARP) phase oxide perovskites Ca4OA2 (A=P, As, Sb, Bi) have recently attracted great interest in the field of ferroelectrics and thermoelectrics, whereas their optoelectronic application is limited by their indirect band gaps. In this work, we introduce A-site anion ordering in Ca4OA2 (A=P, As, Sb, Bi), and find that it induces an indirect-to-direct band gap transition. Using first-principles calculations, we study the ground-state structures, electronic structure, transport properties and optical properties of anion-ordered ARP phase oxide perovskites Ca4OAA′. Based on analyses of the lattice dynamics, the ground-state structures of Ca4OAsSb and Ca4OAsBi are identified in P4/nmm symmetry and those of Ca4OPSb and Ca4OPBi are in the I222 symmetry. In contrast to the Ruddlesden-Popper (RP) phase oxide and halide counterparts, Ca4OAA′ (AA′=PSb, PBi, AsSb, AsBi) show larger band dispersion along the out-of-plane direction, smaller band gaps and highly enhanced out-of-plane mobilities, which results from the short interlayer distances and the enhanced covalency of the pnictides. Although the out-of-plane mobilities of these n=1 ARP phase perovskites highly increase, the comparatively strong polar optical phonon scattering limits the further enhancement of their mobilities. Furthermore, compared to RP phase halide Cs2PbI2Cl2, Ca4OAA′ show strong optical absorption around the band edges, and their optical absorption coefficients can reach 105cm−1 within the visible light region due to small band gaps. This study reveals that these ARP phase oxide perovskites exhibit the potential for optoelectronic applications.

关键词： Electronic structure First-principles calculations Perovskites Semiconductor compounds

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Electric-field-modulated topological phase transition in AlSb/InSe heterobilayers

arXiv

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arXiv 2024年

作者： Fang, D.Q. Wang, D.W. MOE Key Laboratory for Nonequilibrium Synthesis and Modulation of Condensed Matter School of Physics Xi’an Jiaotong University Xi’an710049 China School of Microelectronics State Key Laboratory for Mechanical Behavior of Materials Xi’an Jiaotong University Xi’an710049 China Key Lab of Micro-Nano Electronics and System Integration of Xi’an City Xi’an Jiaotong University Xi’an710049 China

Searching for controllable topological phase by means of external stimuli in two-dimensional (2D) material-based van der Waals (vdW) heterostructures is currently an active field for both the underlying physics and practical applications. Here, using first-principles calculations, we investigate electric-field-modulated topological phase transition in a vdW heterobilayer formed by vertically stacking 2D AlSb and InSe monolayers. The AlSb/InSe heterobilayer studied possesses both dynamical and thermal stabilities, which is a direct bandgap semiconductor and forms a Z-scheme heterojunction. With inclusion of spin-orbit coupling (SOC) and applying external electric field, the bandgap decreases at first and then increase, and a trivial insulator to topological insulator phase transition is observed. For the topological insulator phase, band inversion is ascribed to the strong SOC of p orbitals of Sb. Our work paves the way for the design and application of multifunctional nanoscale devices such as topological field effect transistor. Copyright © 2024, The Authors. All rights reserved.

关键词： Selenium compounds

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