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4th International Conference on Telecommunications and Communication Engineering, ICTCE 2020

作者： Liu, Cheng Wu, Huizhen School of Microelectronics Shanghai University Shanghai200444 China Key Laboratory of Advanced Display and System Applications of Ministry of Education Shanghai University Shanghai200072 China State Key Laboratory of Functional Materials for Informatics Shanghai Institute of Microsystem and Information Technology Chinese Academy of Sciences Shanghai200050 China Department of Physics Zhejiang University Zhejiang Hangzhou310027 China

ISBN: (纸本)9789811656910

1.3μm wafer-bonded vertical-cavity surface-emitting lasers are fabricated, which employ lateral etched p+-InAlAs/n+-InP tunnel junctions as confinement apertures. The VCSEL with a 5μm-diameter aperture exhibits CW operation with threshold current of 0.55 mA, maximum operation temperature up to 82 °C and single-transverse mode emission. The relationship between temperature-dependent characteristics and aperture sizes are discussed. The lateral etched p+-InAlAs/n+-InP tunnel junction aperture is attractive as confinement for high performance wafer-bonded long wavelength VCSELs. © 2022, The Author(s), under exclusive license to Springer Nature Singapore Pte Ltd.

关键词： Surface emitting lasers

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RIS-ADMM: A RIS and ADMM-Based Passive and Sparse Sensing Method With Interference Removal

arXiv

引用

arXiv 2022年

作者： Chen, Peng Chen, Zhimin Miao, Pu Chen, Yun The State Key Laboratory of Millimeter Waves Southeast University Nanjing210096 China The State Key Laboratory of Integrated Chips and Systems Fudan University Shanghai201203 China The School of Electronic and Information Shanghai Dianji University Shanghai201306 China The School of Electronic and Information Engineering Qingdao University Shandong266071 China The State Key Laboratory of ASIC and System The Microelectronics School Fudan University Shanghai201203 China

Reconfigurable Intelligent Surfaces (RIS) emerge as promising technologies in future radar and wireless communication domains. This letter addresses the passive sensing issue utilizing wireless communication signals and RIS amidst interference from wireless access points (APs). We introduce an atomic norm minimization (ANM) approach to leverage spatial domain target sparsity and estimate the direction of arrival (DOA). However, the conventional semidefinite programming (SDP)-based solutions for the ANM problem are complex and lack efficient realization. Consequently, we propose a RIS-ADMM method, an innovative alternating direction method of multipliers (ADMM)-based iterative approach. This method yields closed-form expressions and effectively suppresses interference signals. Simulation outcomes affirm that our RIS-ADMM method surpasses existing techniques in DOA estimation accuracy while maintaining low computational complexity. The code for the proposed method is available online https://***/chenpengseu/***. Copyright © 2022, The Authors. All rights reserved.

关键词： Iterative methods

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Optimizing strain response in lead-free(Bi_(0.5)Na_(0.5))TiO_(3)-BaTiO_(3)-NaNbO_(3)solid solutions via ferroelectric/(non-)ergodic relaxor phase boundary engineering

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Journal of Materiomics 2023年第2期9卷 244-255页

作者： Zhe Wang Jinyan Zhao Nan Zhang Wei Ren Kun Zheng Yi Quan Jian Zhuang Yijun Zhang Luyue Jiang Lingyan Wang Gang Niu Ming Liu Zhuangde Jiang Yulong Zhao Zuo-Guang Ye Electronic Materials Research Laboratory Key Laboratory of the Ministry of Education&International Center for Dielectric ResearchSchool of Electronic Science and EngineeringXi'an Jiaotong UniversityXi'an710049China School of Microelectronics Xidian UniversityXi'an710071China State Key Laboratory for Mechanical Manufacturing System Xi'an Jiaotong UniversityXi'an710049China Department of Chemistry and 4D LABS Simon Fraser UniversityBurnabyBritish ColumbiaV5A 1S6Canada

Lead-free bismuth sodium titanate(Bi_(0.5)Na_(0.5))TiO_(3)(BNT)and related solid solutions are potential piezoelectric materials for such applications as actuators and transducers if their excellent strain responses and piezoelectric properties can be *** this work,a large strain response of 0.61%is achieved in lead-free(0.94-x%)(Bi_(0.5)Na_(0.5))TiO_(3)-0.06BaTiO_(3)-x%NaNbO_(3)(x=0 e6,BNT-6BT-xNN)ceramics with the composition of x=3.5 in a pseudo-cubic *** of ferroelectric(FE)and relaxor(RE)domain structures is observed in all the unpoled ceramics and the enhanced strain response is believed to be related to the evolution of the ergodic relaxor(ER)and non-ergodic(NR)states thanks to the substitution of antiferroelectric ***-6BT-3.5NN is a critical composition near the FE/NR/ER phase boundary close to room temperature(RT)and its high strain response arises from a synergistic combination of a reversible electric-field-induced phase transition and an active domain switching in the mixed NR/ER *** work provides new insights into the dynamic interplay between mesoscopic domains and macroscopic electrical properties in the BNT-based piezoceramics.

关键词： Lead-free piezoceramics Strain responses Relaxor behavior Domain state Reversible phase transition Phase boundary engineering

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Fabrication of p-MoTe2/n-MoS2 heterostructure and its electrical characterization

Fabrication of p-MoTe2/n-MoS2 heterostructure and its electr...

引用

IEEE Electron Devices Technology and Manufacturing Conference (EDTM)

作者： Xinyu Chen Yangye Sun Ling Tong Simeng Zhang Xiaoxi Li Jingyi Ma Xiaojiao Guo Minxing Zhang Zhengzong Sun Wenzhong Bao State Key Laboratory of ASIC and System School of Microelectronics Fudan University Shanghai China Shanghai Key Laboratory of Molecular Catalysis and Innovative Materials Fudan University Shanghai China

We demonstrate the fabrication and characterization of large-area van der Waals heterostructure array composed of chemical vapor deposition (CVD) grown multilayer (ML) 2H-MoTe₂ and single-layer (SL) 2H-MoS₂, which exhibits excellent rectifier properties. The transfer characteristics of field-effect transistors (FETs) are also investigated. Our work acquires excellent homogeneity and device performance, which facilitates the application of two-dimensional (2D) materials in electronics.

关键词： Fabrication Performance evaluation Films Field effect transistors Two dimensional displays Rectifiers Heterojunctions

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Fea Study on the Tsv Copper Filling Influenced by the Additives and Electroplating Process

SSRN

引用

SSRN 2023年

作者： Zhao, Zifeng Liu, Ziyu Chen, Lin Sun, Qingqing Liu, Hongye Sun, Yabin School of Optical-Electrical and Computer Engineering University of Shanghai for Science and Technology Shanghai200093 China State Key Laboratory of ASIC and System School of Microelectronics Fudan University Shanghai200433 China Jiashan Fudan Institute Zhejiang Province Jiaxing314100 China Department of Electrical Engineering East China Normal University Shanghai200241 China

Abstract Through-Silicon Via (TSV) is a key technology of three-dimensional (3D) integration. However, it is easy to have voids in the Cu filling process of TSV. Additives and optimized filling process are used to solve this problem. However, the comprehensive analysis of these affecting parameter needs many experiments and cost much time. Thus, the finite element analysis (FEA) for the mass transferring of electroplating is carried out by the COMSOL software in the work. The filling processes with different inhibitor concentrations are first studied and the most suitable density of 64mol/m2 is obtained. However, high inhibitor concentration will lead to much lower plating speed. Thus, the effect of filling process such as current density and plating bath flow velocity on the voids are investigated under the optimized concentrations above. The best filling quality is obtained at the current density of 1.4 ASD and the bath stirring velocity of 0.4 m/s. The underlying growth mechanism of these influencing factors are also analyzed and revealed. © 2023, The Authors. All rights reserved.

关键词： Copper

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A 7-Channel Bio-Signal Analog Front End Employing Single-End Chopping Amplifier Achieving 1.48 NEF

A 7-Channel Bio-Signal Analog Front End Employing Single-End...

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European Conference on Solid-state Circuits (ESSCIRC)

作者： Renze Gan Liangjian Lyu C.-J. Richard Shi State Key Laboratory of ASIC and System Fudan University Shanghai China School of Communication and Electronic Engineering East China Normal University Shanghai China Department of Electrical and Computer Engineering University of Washington Seattle WA USA

This paper presents a high noise efficiency readout circuit for multi-channel bio-signal acquisition. The prototype is implemented in a 65 nm CMOS LP process, which achieves a power consumption of 2.06 $\mu$W/channel, a noise efficiency factor (NEF) of1.48, a common-mode rejection ratio (CMRR) of 105 dB at 50 Hz, and a crosstalk of -65dB by employing these new techniques, including 1) the use of single-ended amplifiers as the unit of low noise amplifier (LNA) for lower NEF, 2) single-end chopping techniques for single-ended amplifiers for suppressing low-frequency noise and offset, 3) digital-assisted DC servo loop (DDSL) for fast settling.

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Retention Characteristic Optimization based on Combined Forming Scheme for Resistive Random Access Memory Chip

IEEE Electron Device Letters

引用

IEEE Electron Device Letters 2025年

作者： Zuo, Qingyun Zheng, Xu Zhao, Yudi Li, Wubo Liu, Yixuan Wu, Qiqiao Lu, Yifei Zhao, Yuhang Zhang, Wenchang Xu, Xiaoxin Min, Hao Liu, Qi Fudan University State Key Laboratory of ASIC and Systems Shanghai201024 China Shanghai Integrated Circuit Research and Development Center Co. Ltd Shanghai201210 China Institute of Microelectronics of Chinese Academy of Sciences State Key Lab of Fabrication Technologies for Integrated Circuits China Beijing Information Science & Technology University Key Laboratory of the Ministry of Education for Optoelectronic Measurement Technology and Instrument Beijing100101 China Fudan University School of Microelectronics China

The long-time retention issue of resistive random access memory (RRAM) presents a significant challenge in maintaining the performance of large-scale RRAM-based computation-in-memory (CIM) systems. To address the long-term inference accuracy degradation caused by RRAM instability, we proposed a combined forming strategy, which can effectively suppress resistance drift and improve inference accuracy without periodic updates of RRAM cells. With this optimized strategy, the probability of high resistance state (HRS) drift was reduced to 5%, and the inference accuracy could be maintained at 88% even after 105s at 125°C. This work provided a valuable strategy for enhancing devices retention and sustaining accuracy in RRAM-based CIM systems. © 1980-2012 IEEE.

关键词： RRAM

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Ultrafast Switching in Integrated Photonics using Antimony

Ultrafast Switching in Integrated Photonics using Antimony

引用

CLEO: Science and Innovations, S and I 2022

作者： Aggarwal, Samarth Milne, Tara Farmakidis, Nikolaos Feldmann, Johannes Li, Xuan Shu, Yu Cheng, Zengguang Salinga, Martin Pernice, Wolfram H.P. Bhaskaran, Harish Department of Materials University of Oxford Parks Road OxfordOX1 3PH United Kingdom State Key Laboratory of ASIC and System School of Microelectronics Fudan University Shanghai200433 China Institut für Materialphysik Westfälische Wilhelms-Universität Münster Wilhelm-Klemm-Straße 10 Münster48149 Germany Department of Physics University of Münster Münster Germany

In this work, we demonstrate the use of Antimony as a reversible memory element in integrated photonics. We show antimony can be used as a multilevel memory with an ultrafast speed of operations. © Optica Publish... 详细信息

ISBN: (纸本)9781557528209

关键词： Antimony

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Ultra-fast, high-power MUTC Photodiodes with bandwidth-efficiency product over 130 GHz × 100%

arXiv

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arXiv 2025年

作者： Li, Linze Long, Tianyu Yang, Xiongwei Zhang, Zhouze Wang, Luyu Wang, Jingyi Wang, Mingxu Lu, Juanjuan Yu, Jianjun Chen, Baile School of Information Science and Technology ShanghaiTech University Shanghai201210 China Fastphide Photonics Shanghai201210 China China State Key Laboratory of ASIC and System Fudan University Shanghai200433 China Key Laboratory for Information Science of Electromagnetic Waves Shanghai Institute for Advanced Communication and Data Science Fudan University Shanghai200433 China School of Information Science and Technology Fudan University Shanghai200433 China

The accelerating demand for wireless communication necessitates wideband, energy-efficient photonic sub-terahertz (sub- THz) sources to enable ultra-fast data transfer. However, as critical components for THz photonic mixing, photodiodes (PDs) face a fundamental trade-off between quantum efficiency and bandwidth, presenting a major obstacle to achieving high-speed performance with high optoelectronic conversion efficiency. Here, we overcome this challenge by demonstrating an InP-based, waveguide-integrated modified unitraveling carrier photodiode (MUTC-PD) with a terahertz bandwidth exceeding 200 GHz and a bandwidth-efficiency product (BEP) surpassing 130 GHz × 100%. Through the integration of a spot-size converter (SSC) to enhance external responsivity, alongside optimized electric field distribution, balanced carrier transport, and minimized parasitic capacitance, the device achieves a 3-dB bandwidth of 206 GHz and an external responsivity of 0.8 A/W, setting a new benchmark for BEP. Packaged with WR-5.1 waveguide output, it delivers radiofrequency (RF) power exceeding -5 dBm across the 127-185 GHz frequency range. As a proof of concept, we achieved a wireless transmission of 54 meters with a single-line rate of up to 120 Gbps, leveraging photonics-aided technology without requiring a low-noise amplifier (LNA). This work establishes a pathway to significantly enhance optical power budgets and reduce energy consumption, presenting a transformative step toward high-bandwidth, high-efficiency sub-THz communication systems and next-generation wireless networks. Copyright © 2025, The Authors. All rights reserved.

关键词： Budget control

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Reconfigurable Intelligent Surface Aided Sparse DOA Estimation Method With Non-ULA

arXiv

引用

arXiv 2022年

作者： Chen, Peng Yang, Zihan Chen, Zhimin Guo, Ziyu The State Key Laboratory of Millimeter Waves Southeast University Nanjing210096 China The School of Electronic and Information Shanghai Dianji University Shanghai201306 China The State Key Laboratory of ASIC and System Fudan University Shanghai201203 China

The direction of arrival (DOA) estimation problem is addressed in this paper. A reconfigurable intelligent surface (RIS) aided system for the DOA estimation is proposed. Unlike traditional DOA estimation systems, a low-cost system with only one complete functional receiver is given by changing the phases of the reflected signals at the RIS elements to realize the multiple measurements. Moreover, an atomic norm-based method is proposed for the DOA estimation by exploiting the target sparsity in the spatial domain and solved by a semi-definite programming (SDP) method. Furthermore, the RIS elements can be any geometry array for practical consideration, so a transformation matrix is formulated and different from the conventional SDP method. Simulation results show that the proposed method can estimate the DOA more accurately than the existing methods in the non-uniform linear RIS array. Copyright © 2022, The Authors. All rights reserved.

关键词： Direction of arrival

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