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Ultrasonic backscatter characterization of cancellous bone using a general Nakagami statistical model

Chinese Physics B 2019年第2期28卷 313-320页

作者： Chengcheng Liu Rui Dong Boyi Li Ying Li Feng Xu Dean Ta Weiqi Wang Institute of Acoustics School of Physics Science and EngineeringTongji University Department of Electronic Engineering Fudan University State Key Laboratory of ASIC and System Fudan University

The goal of this study is to analyze the statistics of the backscatter signal from bovine cancellous bone using a Nakagami model and to evaluate the feasibility of Nakagami-model parameters for cancellous bone characterization. Ultrasonic backscatter measurements were performed on 24 bovine cancellous bone specimens in vitro and the backscatter signals were compensated for the frequency-dependent attenuation prior to the envelope detection. The statistics of the backscatter envelope were modeled using the Nakagami distribution. Our results reveal that the backscatter envelope mainly followed pre-Rayleigh distributions, and the deviations of the backscatter envelope from Rayleigh distribution decreased with increasing bone density. The Nakagami shape parameter(i.e., m) was significantly correlated with bone densities(R = 0.78–0.81, p < 0.001) and trabecular microstructures(|R| = 0.46–0.78, p < 0.05). The scale parameter(i.e.,?) and signal-to-noise ratio(SNR) also yielded significant correlations with bone density and structural features. Multiple linear regressions showed that bone volume fraction(BV/TV) was the main predictor of the Nakagami parameters,and microstructure produced significantly independent contribution to the prediction of Nakagami distribution parameters,explaining an additional 10.2% of the variance at most. The in vitro study showed that statistical parameters derived with Nakagami model might be useful for cancellous bone characterization, and statistical analysis has potential for ultrasonic backscatter bone evaluation.

关键词： ultrasonic backscatter cancellous bone statistical analysis Nakagami model

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Field-free current-induced magnetization switching of a room temperature van der Waals magnet for neuromorphic computing

arXiv

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arXiv 2024年

作者： Zhou, Chenxi Guo, Zhe Li, Qifeng Zhang, Gaojie Wu, Hao Chen, Jinsen Li, Rongxin Zhang, Shuai Cao, Cuimei Xiong, Rui Chang, Haixin You, Long School of Integrated Circuits Wuhan National Laboratory for Optoelectronics Key Laboratory of Information Storage System Ministry of Education of China Huazhong University of Science and Technology Wuhan430074 China Shenzhen Huazhong University of Science and Technology Research Institute Shenzhen518000 China School of Microelectronics Hubei University Wuhan430062 China School of Integrated Circuits Wuhan430074 China Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education School of Physics and Technology Wuhan University Wuhan430072 China Center for Joining and Electronic Packaging State Key Laboratory of Material Processing and Die & Mold Technology School of Materials Science and Engineering Huazhong University of Science and Technology Wuhan430074 China

Spin orbit torque (SOT) has become a promising approach to efficiently manipulate the magnetization switching in spintronic devices. As a main factor to impact the device performance, the high quality interface is essentially desired, which can be readily acquired by using the two-dimensional (2D) van der Waals (vdW) materials. Recently, a 2D ferromagnetic material Fe3GaTe2 has been discovered to possess the above-room-temperature Curie temperature and strong perpendicular magnetic anisotropy (PMA), providing an excellent candidate to build spintronic devices. On the other hand, an external magnetic field is necessary for the SOT-driven deterministic switching of perpendicular magnetization, which has become a block for the real applications. Here, we realize the field-free SOT switching of Fe3GaTe2 at room temperature based on the Fe3GaTe2/MnPt heterostructure. In addition, inspired by the superiority of 2D materials in 3D heterogeneous integration, we explore the potential of our device in the computing in memory (CIM). With the application of the current pulses, the gradual switching of our device at zero field imitates the function of artificial synapse in the convolutional neural network (CNN), achieving a high accuracy (~ 92.8%) pattern recognition. Our work proposes a feasible solution for field-free SOT switching in 2D vdW spintronic devices, which paves the way for applications in magnetic memory and neuromorphic computing. Copyright © 2024, The Authors. All rights reserved.

关键词： Van der Waals forces

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DeepCell: Multiview Representation Learning for Post-Mapping Netlists

arXiv

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arXiv 2025年

作者： Shi, Zhengyuan Ma, Chengyu Zheng, Ziyang Zhou, Lingfeng Pan, Hongyang Jiang, Wentao Yang, Fan Yang, Xiaoyan Chu, Zhufei Xu, Qiang Department of Computer Science and Engineering The Chinese University of Hong Kong Sha Tin Hong Kong Faculty of Electrical Engineering and Computer Science Ningbo University Ningbo China School of Computer Science Hangzhou Dianzi University Hangzhou China School of Microelectronics State Key Laboratory of Integrated Chips and System Fudan University Shanghai China National Center of Technology Innovation for EDA Nanjing China

Representation learning for post-mapping (PM) netlists is a critical challenge in Electronic Design Automation (EDA), driven by the diverse and complex nature of modern circuit designs. Existing approaches focus on intermediate representations like And-Inverter Graphs (AIGs), limiting their applicability to post-synthesis stages. We introduce DeepCell, a multiview representation learning framework that integrates structural and functional insights from both PM netlists and AIGs to learn rich, generalizable embeddings. At its core, DeepCell employs the novel Mask Circuit Modeling (MCM) mechanism, which refines PM netlist representations in a self-supervised manner using pretrained AIG encoders. DeepCell sets a new benchmark in PM netlist representation, outperforming existing methods in predictive accuracy and reconstruction fidelity. To validate its efficacy, we apply DeepCell to functional Engineering Change Orders (ECO), achieving significant reductions in patch generation costs and runtime while improving patch quality. Copyright © 2025, The Authors. All rights reserved.

关键词： Mapping

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Anomalous Polarization-Switching Phenomena and Noteworthy Pyroelectricity in Ferroelectric Hf0.5zr0.5o2 Polycrystalline Films

SSRN

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SSRN 2023年

作者： Wang, Xudong Zhou, Yong Xiong, Ke Wu, Shuyu Tu, Luqi Chen, Yan Wu, Shuaiqin Zeng, Jinhua Zheng, Yuqing Gu, Shiqun Luo, Man Lin, Tie Shen, Hong Meng, Xiangjian Liu, Qi Chu, Junhao Wang, Jianlu State Key Laboratory of Infrared Physics Shanghai Institute of Technical Physics Chinese Academy of Sciences Shanghai200083 China Key Laboratory of Microelectronics Device and Integrated Technology Institute of Microelectronics Chinese Academy of Sciences Beijing100029 China Frontier Institute of Chip and System Fudan University Shanghai200433 China Shanghai Frontier Base of Intelligent Optoelectronics and Perception Institute of Optoelectronics Fudan University Shanghai200433 China Hangzhou Institute for Advanced Study University of Chinese Academy of Sciences Chinese Academy of Sciences Hangzhou330106 China BirenTech Shanghai201114 China Jiangsu Key Laboratory of ASIC Design School of Information Science and Technology Nantong University Jiangsu Nantong226019 China

Hafnia-based oxide thin films exhibit unconventional robust ferroelectricity at the nanoscale, paving the way for advancements in next-generation nanoelectronics. However, the stability and dynamics of ferroelectric polarization in hafnia-based oxides films, particularly at the nanoscale, warrant further exploration. In this study, we delve into the factors influencing the formation of the ferroelectric phase. Our findings illuminate that the confinement effect of the capped layer enhances the stabilization of the metastable orthorhombic phase, thereby bolstering its ferroelectricity and endurance. Furthermore, we identify an unprecedented polarization-switching behavior in HfO2-based ferroelectric films, characterized by a decrease in the remanent polarization and an increase in the coercive field as the temperature drops. This peculiar phenomenon can be ascribed to the reduction in the long-range interaction of polarization dipoles upon cooling, as evidenced by the dielectric spectrum. The diminished long-range interaction results in the emergence of nanodomains and a re-entrant relaxer behavior, offering novel insights into the origin of ferroelectricity and the stability of ferroelectric polarization in hafnia-based thin films. Given the commendable compatibility of Hf0.5Zr0.5O2 films with Si substrates and a pyroelectric coefficient of -62.1 μC/m2·K, they emerge as a prime candidate for sensor device applications. © 2023, The Authors. All rights reserved.

关键词： Thin films

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Spatial variations of valley splitting in monolayer transition metal dichalcogenide

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InfoMat 2020年第3期2卷 585-592页

作者： Chenji Zou Hongbo Zhang Yu Chen Shun Feng Lishu Wu Jing Zhang Ting Yu Jingzhi Shang Chunxiao Cong Division of Physics and Applied Physics School of Physical and Mathematical SciencesNanyang Technological UniversitySingaporeSingapore Institute of Flexible Electronics Northwestern Polytechnical UniversityXi'anShaanxiChina State Key Laboratory of ASIC and System School of Information Science and TechnologyFudan UniversityShanghaiChina

In monolayer group-VI transition metal dichalcogenides(TMDs),valley splitting features have received a lot of attention since it can be potentially utilized for information storing and *** the known two-dimensional(2D)TMDs,monolayer WSe2 or MoSe2 has been mostly selected for excitonic and valleytronic physics studies because of its sharp and well-resolved excitonic spectral ***,their high optical quality leads to a tremendous desire for developing promising WSe2-and MoSe2-based valleytronic *** this goal,exploring the uniformity of valley features crossing an entire piece of monolayer becomes necessary and ***,we performed the systematic magnetophotoluminescence mapping measurements on mechanically exfoliated monolayer WSe2 and observed unconventional spatial variations of valley *** observed nonuniformity is attributed to the modulated doping,which is probably due to the different distributions of unintentional absorbates across the *** an unexpected doping effect shows the nonnegligible influence on the valley Zeeman splitting of the trion emission(XT)while affecting that of the neutral exciton emission(X0)trivially,evidencing for the large valleytronic sensitivity of the charged *** work not only enriches the understanding of the doping effect on valley splitting but also is meaningful for developing 2D valleytronics.

关键词： doping effect monolayer WSe2 photoluminescence transition metal dichalcogenide valley splitting

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Hierarchical compositional ordering in lead-based perovskite relaxors

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Physical Review B 2023年第5期107卷 054101-054101页

作者： Yanxing Zhang Jiale Zhang Nan Zhang Laijun Liu Alexei A. Bokov Zuo-Guang Ye Dawei Wang School of Physics Henan Normal University Xinxiang 453007 China School of Microelectronics & State Key Laboratory for Mechanical Behavior of Materials Xi'an Jiaotong University Xi'an 710049 China Key Lab of Micro-Nano Electronics and System Integration of Xi'an City Xi'an Jiaotong University Xi'an 710049 China Electronic Materials Research Laboratory–Key Laboratory of the Ministry of Education and International Center for Dielectric Research Xi' an Jiaotong University Xi'an 710049 China Key Laboratory of Nonferrous Materials and New Processing Technology Ministry of Education College of Materials Science and Engineering Guilin University of Technology Guilin 541004 China Department of Chemistry and 4D LABS Simon Fraser University Burnaby British Columbia Canada V5A 1A6

Lead-based relaxor ferroelectric perovskites with the formula Pb(B1/3B2/3′)O3, such as Pb(Mg1/3Nb2/3)O3, can have different degrees of compositional ordering even for the same stoichiometry. Despite intensive investigation, determining the nature of the B and B′ ordering remains a challenging problem. Here, we reveal a hierarchical ordering in Pb(B1/3B2/3′)O3 on top of the well-known βI and βII sublattices, which is the first level of the proposed hierarchy. Such additional ordering, which is found by considering additional nearest neighboring interactions in the model enriches our understanding of the complex nature of the chemical ordering in lead-based ferroelectric relaxors. In addition, we show that Pb(Cd1/3Nb2/3)O3 has a higher degree of ordering than that of Pb(Mg1/3Nb2/3)O3 or Pb(Zn1/3Nb2/3)O3 in which antiphase domains exist, revealing the possible different degree of compositional ordering arising from intralattice ordering.

关键词： Order parameters Phase transitions Relaxor ferroelectrics Monte Carlo methods

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Robust DNA-Bridged Memristor for Textile Chips

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Angewandte Chemie 2020年第31期132卷 12862-12868页

作者： Xu X. Zhou X. Wang T. Shi X. Liu Y. Zuo Y. Xu L. Wang M. Hu X. Yang X. Chen J. Chen L. Chen P. Peng H. State Key Laboratory of Molecular Engineering of Polymers Department of Macromolecular Science and Laboratory of Advanced Materials Fudan University Shanghai 200438 China State Key Laboratory of ASIC and System School of Microelectronics Fudan University Shanghai 200433 China International Research Center for Renewable Energy State Key Laboratory of Multiphase Flow in Power Engineering Xi'an Jiao Tong University Shannxi 710049 China State Key Laboratory of Surface Physics Fudan University Shanghai 200438 China Department of Materials Science Fudan University Shanghai 200438 China

Electronic textiles may revolutionize many fields, such as communication, health care and artificial intelligence. To date, unfortunately, computing with them is not yet possible. Memristors are compatible with the interwoven structure and manufacturing process in textiles because of its two-terminal crossbar configuration. However, it remains a challenge to realize textile memristors owing to the difficulties in designing advanced memristive materials and achieving high-quality active layers on fiber electrodes. Herein we report a robust textile memristor based on an electrophoretic-deposited active layer of deoxyribonucleic acid (DNA) on fiber electrodes. The unique architecture and orientation of DNA molecules with the incorporation of Ag nanoparticles offer the best-in-class performances, e.g., both ultra-low operation voltage of 0.3 V and power consumption of 100 pW and high switching speed of 20 ns. Fundamental logic calculations such as implication and NAND are demonstrated as functions of textile chips, and it has been thus integrated with power-supplying and light emitting modules to demonstrate an all-fabric information processing system. © 2020 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim

关键词： DNA fiber electronics logic-in-memory computing memristors nanoparticles

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Nonvolatile Reconfigurable Phase-change-materials Integrated Silicon Photonics

Nonvolatile Reconfigurable Phase-change-materials Integrated...

引用

Progress in Electromagnetic Research Symposium (PIERS)

作者： Kai Xu Maoliang Wei Bo Tang Junying Li Yiting Yun Kunhao Lei Yingchun Wu Lan Li Hongtao Lin State Key Laboratory of Modern Optical Instrumentation Key Laboratory of Micro-Nano Electronics and Smart System of Zhejiang Province College of Information Science and Electronic Engineering Zhejiang University Hangzhou China Institute of Microelectronics of the Chinese Academy of Sciences Beijing China Hangzhou Institute for Advanced Study University of Chinese Academy of Sciences Hangzhou China Key Laboratory of 3D Micro/Nano Fabrication and Characterization of Zhejiang Province School of Engineering Westlake University Hangzhou China Institute of Advanced Technology Westlake Institute for Advanced Study Hangzhou China

ISBN: (数字)9798350375909

ISBN: (纸本)9798350375916

The emergence of integrated photonic technology provides an attractive solution of high speed, broad bandwidth and strong parallelism for large-scale information transmission and processing in interconnection, communication and computing. Reconfigurability is necessary for photonic processors to adapt varieties of application scenarios in the fields of data exchange, microwave photonics and neural networks. As yet, thermo-optical effect and carrier plasma dispersion effect are the most common phenomena for optical modulation. However, the volatility not only requires continuous power supply to maintain the devices’ state, but also accompanies with serious thermal crosstalk induced by active regions. Hence, the nonvolatile methods that can reconfigure and fix on the current state for a long time after a single external excitation are considered as one of the significant technologies in the next generation of integrated photonics. Nonvolatile reconfiguration has been achieved through trapped-charge effect, bistable micro-electromechanical system (MEMS) with nano-latch mechanism and ferroelectric materials, which suffer from high loss, lower stability and complex process flow. Chalcogenide phase change materials (PCM) have become a promising method to realize compact and nonvolatile reconfigurable integrated photonic devices due to the high optical constant contrast between amorphous state and crystalline state, superiorly stable property and low temperature deposition possibility. Here, we developed a monolithic back-end-of-line integration technology of PCM in silicon photonics, supporting "Zero-change" heterogeneous integration platform at wafer scale. On this basis, nonvolatile integrated photonic devices with excellent performance have been fabricated. It lays a foundation for improving the energy efficiency and integration density of integrated photonic processors and suppressing thermal crosstalk between integrated photonic devices.

关键词： Phase change materials Performance evaluation Optical losses Program processors Optical resonators Crosstalk Silicon photonics

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Bottom-Up Nucleation Induced Conformal Crystallization For Inverted Ma-Free Perovskite Solar Cells on Textured Substrates

SSRN

引用

SSRN 2024年

作者： Liu, Ruochen Xu, Jiawei Hu, Tianxiang Li, Xiang Wang, Kongxiang Huang, Qi Duan, Zhongtao Liu, Hong Qian, Weifan Zhou, Haiting Cong, Chunxiao Yue, Xiaofei Zhang, Hong Xie, Fengxian Institute for Electric Light Sources School of Information Science and Technology Fudan University Shanghai200438 China Department of Materials Science National Engineering Lab for TFT-LCD Materials and Technologies Fudan University Shanghai200433 China Center for Micro Nano Systems School of Information Science and Technology Fudan University Shanghai200438 China State Key Laboratory of ASIC & System School of Information Science and Technology Fudan University Shanghai200438 China State Key Laboratory of Photovoltaic Science and Technology Shanghai Frontiers Science Research Base of Intelligent Optoelectronics and Perception Institute of Optoelectronics Fudan University Shanghai200438 China

Utilizing textured fluorine-doped tin oxides (FTO) as transparent conductive oxide (TCO) substrates is advantageous for capturing incident light, thereby enhancing the power photoelectric conversion efficiency (PCE) of inverted perovskite solar cells (PSCs). However, the roughness of these substrates and uncontrolled nucleation often results in voids at the perovskite-buried surface, leading to insufficient charge extraction and serving as degradation initiation points. This study introduces (S)-3-amino-4-(4-chlorophenyl)butyric acid hydrochloride (AbaCl), which binds to FTO through its anchor group (–COOH) at the deficient regions of MeO-4PACz. Moreover, the chlorine end molecules offer active sites for nucleation by forming halogen bonds with undercoordinated iodide ions (I–). AbaCl also interacts with formamidinium (FA+) in perovskite precursor solution via hydrogen bonding, promoting crystallization at the buried interface. Consequently, nucleation at this buried interface becomes preferential, ensuring bottom-up growth and preventing voids formation due to incomplete solvent evaporation, allowing the perovskite layer to conformally adhere to the substrate without gaps. As a result, the AbaCl-treated inverted PSCs achieved a champion PCE of 24.5% and exhibited enhanced operational stability. This work presents a method for conformally growing perovskite films on textured substrates to produce efficient and stable PSCs. © 2024, The Authors. All rights reserved.

关键词： Hydrogen bonds

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Quantifying Interface-Performance Relationships in Electrochemical CO2Reduction through Mixed-Dimensional Assembly of Nanocrystal-on-Nanowire Superstructures

引用

Angewandte Chemie 2024年第48期136卷

作者： Hushui Chen Taishi Xiao Yan Xia Hengyao Song Xiangyun Xi Xianwu Huang Prof. Dong Yang Prof. Tongtao Li Prof. Zhengzong Sun Prof. Angang Dong Department of Chemistry Shanghai Key Laboratory of Molecular Catalysis and Innovative Materials and iChEM Fudan University Shanghai 200438 China School of Microelectronics and State Key Laboratory of ASIC and System Fudan University Shanghai 200438 China State Key Laboratory of Molecule Engineering of Polymers and Department of Macromolecular Science Fudan University Shanghai 200438 China

Fine-tuning the interfacial sites within heterogeneous catalysts is pivotal for unravelling the intricate structure–property relationship and optimizing their catalytic performance. Herein, a simple and versatile mixed-dimensional assembly approach is proposed to create nanocrystal-on-nanowire superstructures with precisely adjustable numbers of biphasic interfaces. This method leverages an efficient self-assembly process in which colloidal nanocrystals spontaneously organize onto Ag nanowires, driven by the solvophobic effect. Importantly, varying the ratio of the two components during assembly allows for accurate control over both the quantity and contact perimeter of biphasic interfaces. As a proof-of-concept demonstration, a series of Au-on-Ag superstructures with varying numbers of Au/Ag interfaces are constructed and employed as electrocatalysts for electrochemical CO 2 -to-CO conversion. Experimental results reveal a logarithmic linear relationship between catalytic activity and the number of Au/Ag interfaces per unit mass of Au-on-Ag superstructures. This work presents a straightforward approach for precise interface engineering, paving the way for systematic exploration of interface-dependent catalytic behaviors in heterogeneous catalysts.

关键词： solvophobic effect self-assembly structure–property relationship Au/Ag interface CO2 reduction reaction

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