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A 16-bit Arithmetic Logic Unit Design by Using Gate Diffusion Input

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A 16-bit Arithmetic Logic Unit Design by Using Gate Diffusio...

International Conference on Solid-state and Integrated Circuit Technology

作者： Yihang Duanmu Jianguo Yang Jinbao Li Xiaoyong Xue Minge Jing Xiaoyang Zeng State Key Lab of ASIC and System School of Microelectronics Fudan University Shanghai China Zhejiang Lab Hangzhou China

ISBN: (数字)9781728162355

ISBN: (纸本)9781728162362

Gate diffusion input (GDI) is a new technology of digital circuit design for low power. Compared with traditional CMOS technology, GDI technology can reduce the power consumption, the propagation delay and the circuit area. This work uses the GDI technology to build a 16-bit arithmetic logic unit (ALU) to perform logic operations (AND, OR, NAND and XOR), and math operations (addition, subtraction, adding 1 and subtracting 1), and finally compares it with traditional CMOS circuits.

关键词： Logic gates Adders Simulation CMOS technology Power demand Inverters Delays

Synthesizing brain-network-inspired interconnections for large-scale network-on-chips

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arXiv 2021年

作者： Ge, Mengke Ni, Xiaobing Xu, Qi Huang, Jinglei Chen, Song Kang, Yi Wu, Feng The School of Microelectronics University of Science and Technology of China Anhui Hefei30332 China The State Key Laboratory of Air Traffic Management System and Technology Jiangsu Nanjing China

Brain network is a large-scale complex network with scale-free, small-world, and modularity properties, which largely supports this high-efficiency massive system. In this paper, we propose to synthesize brain-network-inspired interconnections for large-scale network-on-chips. Firstly, we propose a method to generate brain-network-inspired topologies with limited scale-free and power-law small-world properties, which have a low total link length and extremely low average hop count approximately proportional to the logarithm of the network size. In addition, given the large-scale applications and the modular topology, we present an application mapping method, including task mapping and deterministic deadlock-free routing, to minimize the power consumption and hop count. Finally, a cycle-accurate simulator BookSim2 is used to validate the architecture performance with different synthetic traffic patterns and large-scale test cases, including real-world communication networks for the graph processing application. Experiments show that, compared with other topologies and methods, the NoC design generated by the proposed method presents significantly lower average hop count and lower average latency. Especially in graph processing applications with a power-law and tightly coupled inter-core communication, the brain-network-inspired NoC has up to 70% lower average hop count and 75% lower average latency than mesh-based NoCs. Copyright © 2021, The Authors. All rights reserved.

关键词： Network-on-chip

Contactless generation and trapping of hydrodynamic knots in sessile droplets by acoustic screw dislocations

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Research Square

Research Square 2021年

作者： Song, Shuren Zhou, Jia Riaud, Antoine Marcianò, Antonino State Key Laboratory of ASIC and System School of Microelectronics Fudan University Shanghai China Department of Physics Center for Field Theory and Particle Physics Fudan University Shanghai200433 China Laboratori Nazionali di Frascati INFN Via Enrico Fermi 54 Frascati Roma Italy

Hydrodynamics knots are not only promising elementary structures to study mass and momentum transfer in turbulent flows, but also potent analogs for other topological problems arising in particle physics. However, experimental studies of knots are highly challenging due to the limited control over knot generation and difficult observation of the resulting fast-paced multiscale flow evolution. In this paper, we propose using acoustic streaming to tie hydrodynamic knots in fluids. The method is contactless, almost instantaneous and is relatively insensitive to viscosity. Importantly, it allows starting from quite arbitrary three dimensional flow structures without relying on external boundary conditions. We demonstrate our approach by using an acoustic screw dislocation to tie a knot in a sessile droplet. We observe an inversion of the knot chirality (measured by the hydrodynamic helicity) as the topological charge of the screw dislocation is increased. Combined with recent progress in acoustic field synthesis, this work opens a window to study more complex hydrodynamic knot topologies at a broader range of space and timescales. © 2021, CC BY.

关键词： Topology

Contactless generation and trapping of hydrodynamic knots in sessile droplets by acoustic screw dislocations

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arXiv 2021年

关键词： Topology

A power and area efficient lepton hardware encoder with hash-based memory optimization

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arXiv 2021年

作者： Yan, Xiao Di, Zhixiong Huang, Bowen Li, Minjiang Wang, Wenqiang Zeng, Xiaoyang Fan, Yibo State Key Laboratory of ASIC and System Fudan University Shanghai200433 China School of Information Science and Technology Southwest Jiaotong University Chengdu China Alibaba Group Zhejiang Hangzhou311121 China

Although it has been surpassed by many subsequent coding standards, JPEG occupies a large share of the storage load of the current data hosting service. To reduce the storage costs, DropBox proposed a lossless secondary compression algorithm, Lepton, to further improve the compression rate of JPEG images. However, the bloated probability models defined by Lepton severely restrict its throughput and energy efficiency. To solve this problem, we construct an efficient access probability-based hash function for the probability models, and then propose a hardware-friendly memory optimization method by combining the proposed hash function and the N-way Set-Associative unit. After that, we design a highly parameterized hardware structure for the probability models and finally implement a power and area efficient Lepton hardware encoder. To the best of our knowledge, this is the first hardware implementation of Lepton. The synthesis result shows that the proposed hardware structure reduces the total area of the probability models by 70.97%. Compared with DropBox's software solution, the throughput and the energy efficiency of the proposed Lepton hardware encoder are increased by 55.25 and 4899 times respectively. In terms of manufacturing cost, the proposed Lepton hardware encoder is also significantly lower than the general-purpose CPU used by DropBox. Copyright © 2021, The Authors. All rights reserved.

关键词： Image enhancement

P-66: Simulation and Optimization of In-Situ Integration Ultraviolet HEMT-LED Enabled by P-GaN Selective Epitaxy Growth

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SID Symposium Digest of Technical Papers 2023年第1期54卷

作者： Jingyang Zhang Wei Huang Zhaojun Liu Department of Electronic and Electrical Engineering Southern University of Science and Technology Shenzhen Guangdong China 518055 A State Key Laboratory of ASIC and System Shanghai Institute of Intelligent Electronics & Systems School of Microelectronics Fudan University Shanghai China 200433

Based on previous work, the ultraviolet HEMT-LED we fabricated by selective epitaxy growth, this paper further performed simulation to explore the most appropriate p-GaN selection size. P-GaN grown by Selective Epitaxy Growth (SEG) can not only be employed as a junction termination to reduce the electric field crowding of the gate of HEMT, but also form an active region by contacting with 2-dimentional electron gas (2DEG). The simulation results provide an effective reference for the design of p-GaN grown by SEG, and further pave the way for the realization of the idea of integration through the selection of growth methods.

关键词：

Influence of seeding promoters on the properties of CVD grown monolayer molybdenum disulfide

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Nano Research 2019年第4期12卷 823-827页

作者： Peng Yang Ai-Guo Yang Lingxiu Chen Jing Chen Youwei Zhang Haomin Wang Laigui Hu Rong-Jun Zhang Ran Liu Xin-Ping Qu Zhi-Jun Qiu Chunxiao Cong State Key Laboratory of ASIC and System School of Information Science and Technology Fudan University Shanghai 200433 China State Key Laboratory of Functional Material for Informatics Shanghai Institute (rf Microsystem and Information Technology Chinese Academy of Sciences Changning Road 865 Shanghai 200050 China

Chemical vapor deposition (CVD) is the most efficient method to grow large-area two dimensional (2D) transition metal dichiacogenides (TMDCs) in high *** molybdenum disulfide (MoS2) and seed-assistant are the mostly selected 2D TMDC and growth strategy for such CVD processes,*** the advantages of seed catalysts in facilitating the nucleation,achieving higher yield and better repeatability,as well as their effects on the morphologies of as-grown MoS2 have been studied,the influence of seeding promoters on both optical and electrical properties of as-grown monolayer MoS2 is not known comprehensively,which is indeed critical for understanding fundamental physics and developing practical application of such emerging 2D *** this report,we systematically investigated the effect of different seeding promoters on the properties of CVD-grown monolayer *** is found that different seed molecules lead to different impacts on the optical and electrical properties of as-grown monolayer *** three different seed catalysts (perylene-3,4,9,10-tetracarboxylic acid tetrapotassium salt (PTAS),copper phthalocyanine (CuPc),and crystal violet (CV)),PTAS performs better in obtaining large area monolayer MoS2 with good optical quality and high electrical mobility than the other *** work gives a guide for modifying the properties of as-grown monolayer MoS2 and other 2D transition metal dichalcogenides in seeding promoters-assisted synthesis process.

关键词： transition metal dichalcogenides monolayer M0S2 seeding promoters chemical vapor deposition optical and electrical properties

"Zero change" platform for monolithic back-end-of-line integration of phase change materials in silicon photonics

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arXiv 2023年

作者： Wei, Maoliang Xu, Kai Tang, Bo Li, Junying Yun, Yiting Zhang, Peng Wu, Yingchun Bao, Kangjian Lei, Kunhao Chen, Zequn Ma, Hui Sun, Chunlei Liu, Ruonan Li, Ming Li, Lan Lin, Hongtao State Key Laboratory of Modern Optical Instrumentation Key Laboratory of Micro-Nano Electronics and Smart System of Zhejiang Province College of Information Science and Electronic Engineering Zhejiang University Hangzhou310027 China Institute of Microelectronics the Chinese Academy of Sciences Beijing100029 China Hangzhou Institute for Advanced Study University of Chinese Academy of Sciences Hangzhou310024 China Key Laboratory of 3D Micro/Nano Fabrication and Characterization of Zhejiang Province School of Engineering Westlake University Zhejiang Hangzhou310030 China Institute of Advanced Technology Westlake Institute for Advanced Study Zhejiang Hangzhou310024 China State Key Laboratory on Integrated Optoelectronics Institute of Semiconductors Chinese Academy of Sciences Beijing100083 China

Monolithic integration of novel materials for unprecedented device functions without modifying the existing photonic component library is the key to advancing heterogeneous silicon photonic integrated circuits. To achieve this, the introduction of a silicon nitride etching stop layer at selective area, coupled with low-loss oxide trench to waveguide surface, enables the incorporation of various functional materials without disrupting the reliability of foundry-verified devices. As an illustration, two distinct chalcogenide phase change materials (PCM) with remarkable nonvolatile modulation capabilities, namely Sb2Se3 and Ge2Sb2Se4Te1, were monolithic back-end-of-line integrated into silicon photonics. The PCM enables compact phase and intensity tuning units with zero-static power consumption. Taking advantage of these building blocks, the phase error of a push-pull Mach-Zehnder interferometer optical switch could be trimmed by a nonvolatile phase shifter with a 48% peak power consumption reduction. Mirco-ring filters with a rejection ratio >25dB could be applied for >5-bit wavelength selective intensity modulation, and waveguide-based >7-bit intensity-modulation photonic attenuators could achieve >39dB broadband attenuation. The advanced "Zero change" back-end-of-line integration platform could not only facilitate the integration of PCMs for integrated reconfigurable photonics but also open up the possibilities for integrating other excellent optoelectronic materials in the future silicon photonic process design kits. © 2023, CC BY.

关键词： Selenium compounds

Recent progress of integrated circuits and optoelectronic chips

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Science China(Information Sciences) 2021年第10期64卷 103-135页

作者： Yue HAO Shuiying XIANG Genquan HAN Jincheng ZHANG Xiaohua MA Zhangming ZHU Xingxing GUO Yahui ZHANG Yanan HAN Ziwei SONG Yan LIU Ling YANG Hong ZHOU Jiangyi SHI Wei ZHANG Min XU Weisheng ZHAO Biao PAN Yangqi HUANG Qi LIU Yimao CAI Jian ZHU Xin OU Tiangui YOU Huaqiang WU Bin GAO Zhiyong ZHANG Guoping GUO Yonghua CHEN Yong LIU Xiangfei CHEN Chunlai XUE Xingjun WANG Lixia ZHAO Xihua ZOU Lianshan YAN Ming LI School of Microelectronics Xidian University State Key Laboratory of Integrated Service Networks Xidian University National Integrated Circuit Innovation Center School of Microelectronics Fudan University School of Integrated Circuit Science and Engineering Beihang University China Center for Information Industry Development Frontier Institute of Chip and System Fudan University Institute of Microelectronics Peking University Nanjing Electronic Devices Institute State Key Laboratory of Functional Material for Informatics Shanghai Institute of Microsystem and Information Technology Chinese Academy of Sciences Institute of Microelectronics Tsinghua University Center for Carbon-based Electronics Department of Electronics Peking University CAS Key Laboratory of Quantum Information University of Science and Technology of China CAS Center for Excellence and Synergetic Innovation Center in Quantum Information and Quantum Physics University of Science and Technology of China Origin Quantum Computing Company Limited Key Laboratory of Flexible Electronics & Institute of Advanced Materials Nanjing Tech University State Key Laboratory of Electronic Thin Films and Integrated Devices School of Optoelectronic Science and EngineeringUniversity of Electronic Science and Technology of China National Laboratory of Solid State Microstructures & College of Engineering and Applied Sciences Nanjing University State Key Laboratory on Integrated Optoelectronics Institute of Semiconductors Chinese Academy of Sciences Center of Materials Science and Optoelectronics Engineering University of Chinese Academy of Sciences State Key Laboratory of Advanced Optical Communication Systems and Networks School of Electronics Engineering and Computer Science Peking University School of Electrical and Electronic Engineering Tiangong University Center for Information Photonics and Communications School of Information Science and TechnologySouthwest Jiaotong University School of Electronic Electrical and Communication Engineering

Integrated circuits(ICs) and optoelectronic chips are the foundation stones of the modern information society. The IC industry has been driven by the so-called "Moore's law" in the past 60 years, and now has entered the post Moore's law era. In this paper, we review the recent progress of ICs and optoelectronic chips. The research status, technical challenges and development trend of devices, chips and integrated technologies of typical IC and optoelectronic chips are focused on. The main contents include the development law of IC and optoelectronic chip technology, the IC design and processing technology, emerging memory and chip architecture, brain-like chip structure and its mechanism, heterogeneous integration, quantum chip technology, silicon photonics chip technology, integrated microwave photonic chip, and optoelectronic hybrid integrated chip.

关键词： integrated circuit semiconductor science and technology optoelectronic device and chip photonic integrated circuit wide bandgap semiconductors silicon photonics hybrid integration quantum chip integrated microwave photonic photonic neural computing