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arXiv 2019年

作者： Wang, Wei Wang, Qi Zhang, Kaidi Wang, Xubo Riaud, Antoine Zhou, Jia ASIC System State Key Laboratory School of Microelectronics Fudan University Shanghai200433 China

Depending on the contact line motion, colloid-rich drolets evaporation can leave a ring-like or a spot-like residue. Herein, we determine this outcome by controlling the contact line motion using coplanar direct current electrowetting-on-dielectrics (DC-EWOD). Combined with theoretical calculations of the droplet shape and its evaporation rate, the time-dependent actuation voltage is first derived from experiments and simulations. Thanks to the additional control over the contact angle, the contact line can be maintained in pinned state even on surfaces that exhibit little contact angle hysteresis such as homogenous flat Teflon coatings. In the absence of EWOD control, polystyrene particles and Escherichia coli suspended in the droplet formed a dot-like pattern at the center of the initial contact, whereas application of the mechanism resulted in ring-like patterns of a controllable radius. Unlike chemically or structurally patterned substrates, the contact line could recover its mobility at any preset time before reaching the control limit, which is useful to accurately and consistently fabricate self-assembled nanostructures of desired patterns on different surfaces. Copyright © 2019, The Authors. All rights reserved.

关键词： Escherichia coli

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Multi-Corner Parametric Yield Estimation via Bayesian Inference on Bernoulli Distribution with Conjugate Prior

Multi-Corner Parametric Yield Estimation via Bayesian Infere...

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IEEE International Symposium on Circuits and systems (ISCAS)

作者： Jiahe Shi Zhengqi Gao Jun Tao Yangfeng Su Dian Zhou Xuan Zeng ASIC & System State Key Lab School of Microelectronics Fudan University Shanghai China School of Mathematical Sciences Fudan University Shanghai China Dept. of EE University of Texas at Dallas Dallas USA

ISBN: (数字)9781728133201

ISBN: (纸本)9781728133218

To efficiently estimate parametric yields over multiple process, voltage, temperature corners for binary output circuits, we propose a novel Bayesian Inference method based on Bernoulli distribution with conjugate prior in this paper. The key idea is to adopt a product of Beta distributions as the conjugate prior for the yields and encode circuit performance correlations among different corners into this prior. Next, the hyper-parameters are optimized by using multi-start Quasi-Newton method, and the yields over different corners are estimated via maximum-a-posteriori. Two circuit examples demonstrate that the proposed method achieves up to 3.0× cost reduction over the state-of-the-art methods without surrendering any accuracy.

关键词： Temperature distribution Correlation Training data Bayes methods Numerical models Yield estimation Integrated circuit modeling

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Performance Improvement in Hydrogenated Few-Layer Black Phosphorus Field-Effect Transistors

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Chinese Physics Letters 2018年第12期35卷 49-51页

作者：郑和梅孙顺明刘浩还亚炜杨建国朱宝刘文军丁士进 State Key Laboratory of ASIC and System School of Microelectronics Fudan University

A capping layer for black phosphorus（BP） field-effect transistors（FETs） can provide effective isolation from the ambient air; however, this also brings inconvenience to the post-treatment for optimizing devices. We perform low-temperature hydrogenation on Al2 O3 capped BP FETs. The hydrogenated BP devices exhibit a pronounced improvement of mobility from 69.6 to 107.7 cm2 v-1 s-1, and a dramatic decrease of subthreshold swing from8.4 to 2.6 V/dec. Furthermore, high/low frequency capacitance-voltage measurements suggest reduced interface defects in hydrogenated BP FETs. This could be due to the passivation of interface traps at both Al2 O3/BP and BP/SiO2 interfaces with hydrogen revealed by secondary ion mass spectroscopy.

关键词： Performance Improvement in Hydrogenated Few-Layer Black Phosphorus Field-Effect Transistors BP Al

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Tailoring Oxygen-Depleted and Unitary Ti3C2TxSurface Terminals by Molten Salt Electrochemical Etching Enables Dendrite-Free Stable Zn Metal Anode

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Angewandte Chemie 2024年第36期136卷

作者： Feng Tian Fei Wang Wei Nie Xueqiang Zhang Xuewen Xia Linhui Chang Dr. Zhongya Pang Dr. Xing Yu Dr. Guangshi Li Prof. Dr. Shen Hu Prof. Dr. Qian Xu Prof. Dr. Hsien-Yi Hsu Prof. Dr. Yufeng Zhao Prof. Dr. Li Ji Prof. Dr. Xionggang Lu Prof. Dr. Xingli Zou State Key Laboratory of Advanced Special Steel & School of Materials Science and Engineering Shanghai University Shanghai 200444 P. R. China State Key Laboratory of ASIC and System School of Microelectronics Fudan University Shanghai 200433 P. R. China Department of Materials Science and Engineering School of Energy and Environment City University of Hong Kong Hong Kong 999077 P. R. China Institute of Sustainable Energy College of Sciences Shanghai University Shanghai 200444 P. R. China

Two-dimensional Ti 3 C 2 T x MXene materials, with metal-like conductivities and versatile terminals, have been considered to be promising surface modification materials for Zn-metal-based aqueous batteries (ZABs). However, the oxygen-rich and hybridized terminations caused by conventional methods limit their advantages in inhibiting zinc dendrite growth and reducing corrosion-related side reactions. Herein, −O-depleted, −Cl-terminated Ti 3 C 2 T x was precisely fabricated by the molten salt electrochemical etching of Ti 3 AlC 2 , and controlled in situ terminal replacement from −Cl to unitary −S or −Se was achieved. The as-prepared −O-depleted and unitary-terminal Ti 3 C 2 T x as Zn anode coatings provided excellent hydrophobicity and enriched zinc-ionophilic sites, facilitating Zn 2+ horizontal transport for homogeneous deposition and effectively suppressing water-induced side reactions. The as-assembled Ti 3 C 2 S x @Zn symmetric cell achieved a cycle life of up to 4200 h at a current density and areal capacity of 2 mA cm −2 and 1 mAh cm −2 , respectively, with an impressive cumulative capacity of up to 7.25 Ah cm −2 at 5 mA cm −2 //2 mAh cm −2 . These findings provide an effective electrochemical strategy for tailoring −O-depleted and unitary Ti 3 C 2 T x surface terminals and advancing the understanding of the role of specific Ti 3 C 2 T x surface chemistry in regulating the plating/stripping behaviors of metal ions.

关键词： Oxygen-depleted Ti3C2Tx Unitary terminals Molten salt electrochemical etching Dendrite-free Zn anode

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Projection based active Gaussian process regression for pareto front modeling

arXiv

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arXiv 2020年

作者： Gao, Zhengqi Tao, Jun Su, Yangfeng Zhou, Dian Zeng, Xuan ASIC & System State Key Lab School of Microelectronics Fudan University Shanghai China School of Mathematical Sciences Fudan University Shanghai China Department of EE University of Texas at Dallas Dallas United States

Pareto Front (PF) modeling is essential in decision making problems across all domains such as economics, medicine or engineering. In Operation Research literature, this task has been addressed based on multi-objective optimization algorithms. However, without learning models for PF, these methods cannot examine whether a new provided point locates on PF or not. In this paper, we reconsider the task from Data Mining perspective. A novel projection based active Gaussian process regression (P-aGPR) method is proposed for efficient PF modeling. First, P-aGPR chooses a series of projection spaces with dimensionalities ranking from low to high. Next, in each projection space, a Gaussian process regression (GPR) model is trained to represent the constraint that PF should satisfy in that space. Moreover, in order to improve modeling efficacy and stability, an active learning framework has been developed by exploiting the uncertainty information obtained in the GPR models. Different from all existing methods, our proposed P-aGPR method can not only provide a generative PF model, but also fast examine whether a provided point locates on PF or not. The numerical results demonstrate that compared to state-of-the-art passive learning methods the proposed P-aGPR method can achieve higher modeling accuracy and stability. Copyright © 2020, The Authors. All rights reserved.

关键词： Numerical methods

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An effective method of contour extraction for SEM image based on DCNN

An effective method of contour extraction for SEM image base...

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Advanced Patterning Solutions (IWAPS), International Workshop on

作者： Tao Zhou Xuelong Shi YanYan Chen Li Shoumian Chen Yuhang Zhao Wenzhan Zhou Kan Zhou Xuan Zeng Shanghai Integrated Circuits R&D Center Co. Ltd. Shanghai China State Key Lab of ASIC & System School of Microelectronics Fudan University Shanghai China

ISBN: (数字)9781728175775

ISBN: (纸本)9781728175782

SEM-image contours provide valuable information about patterning quality and capability. Geometrical properties such as critical dimension and resist sidewall angle could be extracted or estimated from SEM image contours. Those geometrical properties can be used for OPC model calibration, OPC model verification and lithography hotspot detection. This work presents a machine learning based method for contour extraction of SEM image. A designed DCNN network and self-made high quality dataset are combined for contour model training. Based on the high capability of image/feature representation and remarkable advantage of parallel computing with hardware acceleration, the model achieves high accuracy and real-time operation for contour extraction, more importantly, it provides the ability to distinguish and separate the top and bottom contours of SEM images. Additionally, the model not only removes the abundant edges but also repairs the local discontinuity caused by imperfect process and measuring technique.

关键词： Training Computational modeling Lithography Resists Machine learning Feature extraction Real-time systems

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Effective Sparsity-Prior Image Denoising Algorithm for CMOS Image Sensor in Ultra-Low Light Imaging Applications

Effective Sparsity-Prior Image Denoising Algorithm for CMOS ...

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China Semiconductor Technology International Conference (CSTIC)

作者： Tao Zhou Chen Li Jiebin Duan Xuan Zeng Yuhang Zhao Shanghai Integrated Circuits R&D Center Co. Ltd. Shanghai China State Key Lab of ASIC & System School of Microelectronics Fudan University Shanghai China

ISBN: (数字)9781728165585

ISBN: (纸本)9781728165592

An effective algorithm is designed for incorporating in a 3D stacked CMOS image sensor for image denoising in ultra-low light conditions. The algorithm originates from sparsity-prior of image and non-locally clustered sparse representation. The simulation results of the CIS image signal processing (ISP) demonstrate high-performance at intense noise level of ultra-low light images, which reveal a great potential of the CIS design in various applications such as night shot, security monitoring, machine-state inspection, medical imaging, biophysics detection, etc.

关键词： Three-dimensional displays Simulation Signal processing algorithms Clustering algorithms CMOS image sensors Signal processing Image denoising

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Crystal orientation-modulated ferroelectric and dielectric properties in Hf0.5Zr0.5O2 thin films

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Science China Information Sciences 2025年第6期68卷

作者： Li, Yu-Chun Li, Xiao-Xi Xu, Zhongshan Huang, Zi-Ying Yang, Yingguo Zhu, Xiao-Na Li, Ming Zhang, David Wei Lu, Hong-Liang State Key Laboratory of Application-Specific Integrated Circuit and System Shanghai Institute of Intelligent Electronics and Systems School of Microelectronics Fudan University Shanghai200433 China Zhangjiang Fudan International Innovation Center Shanghai201203 China National Integrated Circuit Innovation Center Shanghai201203 China Wide Bandgap Semiconductor Technology Disciplines State Key Laboratory School of Microelectronics Xidian University Xi’an710071 China Jiashan Fudan Institute Jiaxing314100 China School of Integrated Circuits Peking University Beijing100871 China

Hafnium oxide (HfO2) is a promising ferroelectric material because of its robust electric dipoles at the nanoscale. Although HfO2 is an oxygen-displacement-induced ferroelectric material, a comprehensive understanding of the intricate relationship between its electrical performance and oxygen-related processes is still limited. This study delves into the ferroelectric and dielectric properties of Zr-doped HfO2 (Hf0.5Zr0.5O2, HZO) thin films, unveiling a reliance on the oxygen dose during the atomic layer deposition process. A superior remanent polarization (2Pr) of 58 µC/cm2 and a high dielectric constant of 52.7 are obtained in the HZO capacitors with 10 and 1 s oxygen plasma durations, respectively. Our work establishes that the enhanced ferroelectricity observed in samples with longer oxygen dose time is attributed to the gradual out-of-plane orientation of the polar c-axis, as indicated by grazing incidence wide-angle X-ray scattering analysis. Meanwhile, the larger dielectric constant observed in samples with the shortest oxygen dose time (1 s) originates from the out-of-plane tilt of the b-axis in an orthorhombic-phase cell. These new insights into the controlled crystal orientation through oxygen dose modulation open avenues for optimizing the performance of the HfO2-based devices. © Science China Press 2025.

关键词： Ferroelectricity

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Self-powered solar-blind photodiodes based on EFG-grown(100)-dominant β-Ga_(2)O_(3) substrate

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Chinese Physics B 2021年第1期30卷 483-486页

作者： Xu-Long Chu Zeng Liu Yu-Song Zhi Yuan-Yuan Liu Shao-Hui Zhang Chao Wu Ang Gao Pei-Gang Li Dao-You Guo Zhen-Ping Wu Wei-Hua Tang Laboratory of Information Functional Materials and Devices School of Science&State Key Laboratory of Information Photonics and Optical CommunicationsBeijing University of Posts and TelecommunicationsBeijing 100876China Center of Materials Science and Optoelectronics Engineering University of Chinese Academy of SciencesBeijing 100049China The Engineering Research Center for Semiconductor Integrated Technology Institute of SemiconductorsChinese Academy of SciencesBeijing 100083China China Aerospace System Simulation Technology Co. Ltd.(Beijing)Beijing 100195China Division of Interdisciplinary and Comprehensive Research&Platform for Characterization and Test Suzhou Institute of Nano-Tech and Nano-BionicsChinese Academy of SciencesSuzhou 215123China Center for Optoelectronics Materials and Devices&Key Laboratory of Optical Field Manipulation of Zhejiang Province Department of PhysicsZhejiang Sci-Tech UniversityHangzhou 310018China School of Nano-Tech and Nano-Bionics University of Science and Technology of ChinaHefei 230026China College of Electronic and Optical Engineering&College of Microelectronics Nanjing University of Posts and TelecommunicationsNanjing 210046China National and Local Joint Engineering Laboratory for RF Integration and Micro-Packing Technologies Nanjing University of Posts and TelecommunicationsNanjing 210046China

We report the edge-defined-film-fed(EFG)-grown β-Ga_(2)O_(3)-based Schottky *** device has a reverse leakage current of ~nA and a rectified ratio of ~10^(4) at ±5 *** addition,the photodiode detector shows a dark current of 0.3 pA,a photo-responsivity(R) of 2.875 mA/W,a special detectivity(D*) of 10^(10) Jones,and an external quantum efficiency(EQE) of 1.4% at zero bias,illustrating a self-powered *** work may advance the development of the Ga_(2)O_(3)-based Schottky diode solar-blind photodetectors.

关键词： β-Ga_(2)O_(3)substrate Schottky photodiode solar-blind detection

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A High Linearity T&H circuit for 1GHz Pipeline ADC in 65nm CMOS

A High Linearity T&H circuit for 1GHz Pipeline ADC in 65nm C...

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International Conference on Solid-state and Integrated Circuit Technology

作者： H. J. Wu Y. P. Zeng X. L. Xing N. Lin Q. Li Fudan Microelectronics Co. Ltd Shanghai China No.58 China Electronic Technology Group Corporation Wuxi China State Key Laboratory of ASIC and system Fudan University Shanghai China

ISBN: (数字)9781728162355

ISBN: (纸本)9781728162362

A 3.3/2.5V/1.2V high linearity track-and-hold (T&H) circuit for 1GHz Pipeline analog to digital converter (ADC) in 65nm CMOS is implemented. It includes the two input buffer with source follower, bias and common mode voltage and generated part, input-impedance matching network and SPI part. Input-impedance matching network include a 50- Ω /100- Ω /200-Ω resistor controlled with SPI. The simulated results show that the SFDR and SNDR of the input buffer can get 89dB and 88dB, respectively. The power consumption is 158mW with typical 3.3V/2.5V/1.2V supply.

关键词： Linearity Impedance matching Clocks Impedance Pipelines Generators Resistors

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