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Annual International Symposium on Reliability Physics

作者： Chang Cai Tianqi Liu Jie Liu Gengsheng Chen Luchang Ding Kai Zhao Bingxu Ning Mingjie Shen School of Nuclear Science and Technology University of Chinese Academy of Sciences Beijing China Institute of Modern Physics Chinese Academy of Sciences Lanzhou China State Key Laboratory of ASIC and System Fudan University Shanghai China

ISBN: (数字)9781728131993

ISBN: (纸本)9781728132006

Four kinds of radiation hardened SRAM were fabricated based on a 22 nm UTBB FDSOI process and irradiated by high-energy heavy ions. The high SEU tolerance and even SEU immunity for the three DICE SRAMs were investigated in vertical heavy-ion irradiation. However, the large-tilt-incidence (75°-85°) significantly increased the SEU cross sections for the 8-T SRAMs, and the errors in M-DICE and C-DICE hardened SRAMs in large tilt incidence were observed as well, indicating that the layout placement is essential. The UTBB FDSOI process contributes substantially to realize high SEU tolerance. While considering the existence of 4π-distributed relativistic heavy ions in space, the large-tilt irradiation is also indispensable in ground evaluation especially for the high reliable systems.

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Stable Self-Charged Perovskite Quantum Rods for Liquid Laser with Near-Zero Threshold

arXiv

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arXiv 2025年

作者： Li, Jialu Han, Xue Wang, Wenjie Wang, Jinhui Zhang, Tingting Wu, Yuting Zhang, Guofeng Li, Bin Yang, Changgang Guo, Wenli Zhang, Mi Chen, Ruiyun Qin, Chengbing Hu, Jianyong Yang, Zhichun Liu, Shaoding Wang, Yue Gao, Yunan Ma, Jie Xiao, Liantuan Jia, Suotang State Key Laboratory of Quantum Optics Technologies and Devices Institute of Laser Spectroscopy Collaborative Innovation Center of Extreme Optics Shanxi University Taiyuan030006 China Key Lab of Advanced Transducers and Intelligent Control System of Ministry of Education Taiyuan University of Technology 79 Yingze Street Taiyuan030024 China School of Microelectronics College of Materials Science and Engineering Nanjing University of Science and Technology Nanjing210094 China State Key Laboratory for Mesoscopic Physics and Frontiers Science Center for Nano-optoelectronics School of Physics Peking University Beijing100871 China

Colloidal quantum dots (QDs) are promising optical gain materials that require further threshold reduction to realize their full potential. While QD charging theoretically reduces the threshold to zero, its effectiveness has been limited by strong Auger recombination and unstable charging. Here we theoretically reveal the optimal combination of charging number and Auger recombination to minimize the lasing threshold. Experimentally, we develop stable self-charged perovskite quantum rods (QRs) as an alternative to QDs via state engineering and Mn-doping strategy. An unprecedented two-order-of-magnitude reduction in nonradiative Auger recombination enables QRs to support a sufficient charging number of up to 6. The QR liquid lasing is then achieved with a near-zero threshold of 0.098 using quasi-continuous pumping of nanosecond pulses, which is the lowest threshold among all reported QD lasers. These achievements demonstrate the potential of the specially engineered QRs as an excellent gain media and pave the way for their prospective applications. Copyright © 2025, The Authors. All rights reserved.

关键词： Optical pumping

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A 28nm 512Kb adjacent 2T2R RRAM PUF with interleaved cell mirroring and self-adaptive splitting for extremely low bit error rate of cryptographic key

A 28nm 512Kb adjacent 2T2R RRAM PUF with interleaved cell mi...

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IEEE Asian Conference on Solid-state Circuits (ASSCC)

作者： Xiaoyong Xue Jianguo Yang Yuejun Zhang Mingyu Wang Hangbing Lv Xiaoyang Zeng Ming Liu ASIC and System State Key Laboratory School of Microelectronics Fudan University China Key Laboratory of Microelectronics Devices and Integrated Technology Institute of Microelectronics of the Chinese Academy of Sciences China School of Electrical Engineering and Computer Science Ningbo University Ningbo China

ISBN: (数字)9781728151069

ISBN: (纸本)9781728151076

Reliability and cost efficiency are of utmost importance for cryptographic key generation and storage in IoT applications. This paper presents a 2T2R RRAM PUF scheme with assisting circuit techniques for dense and reliable cryptographic key generation in 28nm logic process. The set time mismatch in two adjacent RRAM devices is exploited for PUF output with better tolerance against PVTA variations. Array architecture featuring interleaved cell mirroring improves the randomness by eliminating the systematic deviation. Self-adaptive splitting with current limiter eliminates the negative effect of mismatch in the peripheral circuits and suppresses the undue duration of large operation current. Silicon data demonstrates our RRAM PUF passes NIST test with intrachip Hamming distance (HD) of 0, inter-chip HD of 0.496 and bit error rate of -5@0-120 °C. The cell size of 2T2R PUF is 0.54 μm 2 and can be reduced when the selector is shared or the RRAM set/reset voltages are optimized below the core supply voltage.

关键词： Computer architecture Microprocessors Resistance systematics Bit error rate Cryptography Current limiters

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A dual-gate MoS2 photodetector based on interface coupling effect

arXiv

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arXiv 2019年

作者： Liao, Fuyou Chen, Xinyu Wang, Yin Zhang, Xinzhi Zhu, Hao Chen, Lin Sun, Qinging Zhou, Peng Zhang, David Wei Bao, Wenzhong Deng, Jianan Liu, Jian Wan, Jing Hu, Weida Wang, Jianlu Zhou, Jing State Key Laboratory of ASIC and System School of Microelectronics Fudan University Shanghai200433 China State Key Laboratory of ASIC and System School of Information Science and Technology Fudan University Shanghai200433 China Shanghai Institute of Technical Physics Chinese Academy of Sciences Shanghai200083 China

Two-dimensional (2D) transition metal dichalcogenides (TMDs) based photodetectors have shown great potential for the next generation optoelectronics. However, most of the reported MoS2 photodetectors function under the photogating effect originated from the charge-trap mechanism, which is difficult for quantitative control. Such devices generally suffer from a poor compromise between response speed and responsivity (R) and large dark current. Here, a dual-gated (DG) MoS2 phototransistor operating based on the interface coupling effect (ICE) is demonstrated. By simultaneously applying a negative top-gate voltage (VTG) and positive back-gate voltage (VBG) to the MoS2 channel, the photo-generated holes can be effectively trapped in the depleted region under TG. An ultrahigh R of ~105 A/W and detectivity (D*) of ~1014 Jones have been achieved in several devices with different thickness under Pin of 53 μW/cm2 at VTG=-5 V. Moreover, the response time of the DG phototransistor can also be modulated based on the ICE. Based on these systematic measurements of MoS2 DG phototransistors, the results show that the ICE plays an important role in the modulation of photoelectric performances. Our results also pave the way for the future optoelectrical application of 2D TMDs materials and prompt for further investigation in the DG structured phototransistors. Copyright © 2019, The Authors. All rights reserved.

关键词： Molybdenum compounds

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Low-Dropout Regulator design with a simple structure for good high frequency PSRR performance based on Bandgap Circuit

Low-Dropout Regulator design with a simple structure for goo...

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International Conference on asic

作者： Xiaozhi Kang Xiaoxu Kang Zijian Zhao Jingxiu Ding Yi Hu Dapeng Xu Qingqing Sun David Wei Zhang State Key Laboratory of ASIC and System School of Microelectronics Fudan University Shanghai China Shanghai IC R&D Center Shanghai China

This paper describes an op-amp free low-dropout regulator with a high PSRR over a broad frequency range. The design merges the high PSRR bandgap and LDO without op-amp involved and thus greatly reduces the silicon area. As no high impedence node engaged in the circuit, it is easy to achieve a good high frequency PSRR performance by using a locally regulated supply voltage. The op-amp free LDO is then developed by embedding replica technique in the bandgap. The circuit is evaluated with HHGrace 0.35μm CMOS technology. It generates a reference voltage of 1.152V and has a temperature coefficient of 0.01mV/K at 27C. LDO has a PSRR of -96dB at DC and still -48.5dB at 1MHz.

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Balance of memory footprint and runtime for high-density routing in large-scale FPGAs

Balance of memory footprint and runtime for high-density rou...

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International Conference on asic

作者： Wei Liu Weilin Cong Chengyu Hu Peng Lu Jinmei Lai State Key Laboratory of ASIC and System Fudan University Shanghai China Chengdu Sino Microelectronics Technology Co. Ltd

The scale of modern FPGAs is expanding and applications on FPGA are becoming more and more complex. Applications requiring high-density routing in large-scale FPGA determine that CAD tools not only require large memory consumption, but also require long routing runtime. This paper proposes a method to describe the regularity of interconnect resources in CB/SB structure, and then applies a two-level template method to store the routing resource graph (RRG) which describes the detailed FPGA interconnect resources. This algorithm fully considers the high regularity of interconnect resources in large-scale FPGAs with CB/SB structure, memory footprint could be reduced. At the same time, RRG created by this method does not affect the routing search space, thus routing runtime will not change significantly. Implementation of the algorithm on VPR platform shows a memory reduction of 1.83X could be achieved at a routing runtime penalty of 1.07X.

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A High Reliability 500 µW Resistance-to-Digital Interface Circuit for SnO2 Gas Sensor IoT Applications

A High Reliability 500 µW Resistance-to-Digital Interface C...

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International Conference on asic

作者： Jianguo Yang Xiaowen Li Qingting Ding Xiaoyong Xue Xiaoxin Xu Qing Luo Hangbing Lv Ming Liu Key Laboratory of Microelectronics Devices and Integrated Technology Institute of Microelectronics of the Chinese Academy of Sciences China Huadong Hospital Affiliated to Fudan University Shanghai China ASIC and System State Key Laboratory School of Microelectronics Fudan University Shanghai China

A low power re-configurable ring oscillator (RO) based interface circuit for SnO 2 gas sensor is presented. The period of RO is dominated by the sampling voltage from gas sensor which is dependent on gas concentration. This proposed circuit improves the performance and power efficiency for resistive sensors. The interface circuit is implemented in 0.18 μm logic process with an area of 4000 μm 2 and 0.5 mW power consumption. The SnO 2 thin films deposited on a micro hotplate machined by a MEMS process and is finally integrated with the interface chip in the form of a multi-chip package. Detection of Sub-ppm-Level ethanol gas has been demonstrated, the total power consumption of the sensor is less than 25 mW, which is suitable for IoT gas detection applications.

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Suppressing crosstalk in the photoelectron in-situ sensing device (PISD) by double SOI

Suppressing crosstalk in the photoelectron in-situ sensing d...

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International Conference on Ultimate Integration of Silicon, ULIS

作者： M. Arsalan Liu Jian A. Zaslavsky S. Cristoloveanu X. Zhang FY. Liu B. Li J. Wan State key lab of ASIC and System School of Information Science and Engineering Fudan University Shanghai China Brown University Providence RI USA IMEP-LAHC INP-Grenoble/Minatec Grenoble France Institute of Microelectronics Chinese Academy of Sciences Beijing China Institute of Microelectronics Chinese Academy of SciencesBeijingChina100029

ISBN: (数字)9781728187655

ISBN: (纸本)9781728187662

In our previous work on silicon-on-insulator (SOI) photodetectors, we have used the deep-depletion effect in SOI substrates to construct the photoelectron in-situ sensing device (PISD). The PISD is a one-transistor active pixel sensor (1T-Aps) that is more compact than conventional CMOS sensors. In this work, we study the crosstalk between different pixels in the PISD, which is severe in a conventional SOI substrate. Through TCAD simulations, the use of a double SOI (DSOI) substrate is shown to suppress crosstalk between PISD pixels. The on extra buried oxide layer completely separates the substrate into two parts which shield the movements of charges across the adjacent cells. The impact of top Si thickness and buried oxide thickness is observed.

关键词： Semiconductor device modeling Simulation Crosstalk Silicon-on-insulator Silicon Sensors Substrates

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Technology Roadmap for Flexible Sensors

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ACS NANO 2023年第6期17卷 5211-5295页

作者： Luo, Yifei Abidian, Mohammad Reza Ahn, Jong-Hyun Akinwande, Deji Andrews, Anne M. Antonietti, Markus Bao, Zhenan Berggren, Magnus Berkey, Christopher A. Bettinger, Christopher John Chen, Jun Chen, Peng Cheng, Wenlong Cheng, Xu Choi, Seon-Jin Chortos, Alex Dagdeviren, Canan Dauskardt, Reinhold H. Di, Chong-an Dickey, Michael D. Duan, Xiangfeng Facchetti, Antonio Fan, Zhiyong Fang, Yin Feng, Jianyou Feng, Xue Gao, Huajian Gao, Wei Gong, Xiwen Guo, Chuan Fei Guo, Xiaojun Hartel, Martin C. He, Zihan Ho, John S. Hu, Youfan Huang, Qiyao Huang, Yu Huo, Fengwei Hussain, Muhammad M. Javey, Ali Jeong, Unyong Jiang, Chen Jiang, Xingyu Kang, Jiheong Karnaushenko, Daniil Khademhosseini, Ali Kim, Dae-Hyeong Kim, Il-Doo Kireev, Dmitry Kong, Lingxuan Lee, Chengkuo Lee, Nae-Eung Lee, Pooi See Lee, Tae-Woo Li, Fengyu Li, Jinxing Liang, Cuiyuan Lim, Chwee Teck Lin, Yuanjing Lipomi, Darren J. Liu, Jia Liu, Kai Liu, Nan Liu, Ren Liu, Yuxin Liu, Yuxuan Liu, Zhiyuan Liu, Zhuangjian Loh, Xian Jun Lu, Nanshu Lv, Zhisheng Magdassi, Shlomo Malliaras, George G. Matsuhisa, Naoji Nathan, Arokia Niu, Simiao Pan, Jieming Pang, Changhyun Pei, Qibing Peng, Huisheng Qi, Dianpeng Ren, Huaying Rogers, John A. Rowe, Aaron Schmidt, Oliver G. Sekitani, Tsuyoshi Seo, Dae-Gyo Shen, Guozhen Sheng, Xing Shi, Qiongfeng Someya, Takao Song, Yanlin Stavrinidou, Eleni Su, Meng Sun, Xuemei Takei, Kuniharu Tao, Xiao-Ming Tee, Benjamin C. K. Thean, Aaron Voon-Yew Trung, Tran Quang Wan, Changjin Wang, Huiliang Wang, Joseph Wang, Ming Wang, Sihong Wang, Ting Wang, Zhong Lin Weiss, Paul S. Wen, Hanqi Xu, Sheng Xu, Tailin Yan, Hongping Yan, Xuzhou Yang, Hui Yang, Le Yang, Shuaijian Yin, Lan Yu, Cunjiang Yu, Guihua Yu, Jing Yu, Shu-Hong Yu, Xinge Zamburg, Evgeny Zhang, Haixia Zhang, Xiangyu Zhang, Xiaosheng Zhang, Xueji Zhang, Yihui Zhang, Yu Zhao, Siyuan Zhao, Xuanhe Zheng, Yuanjin Zheng, Yu-Qing Zheng, Zijian Zhou, Tao Zhu, Bowen Zhu, Ming Zhu, Rong Zhu, Yangzhi Zhu, Yong Zou, Guijin Chen, Xiaodong 08-03 Innovis Singapore 138634 Republic of Singapore Innovative Centre for Flexible Devices (iFLEX) School of Materials Science and Engineering Nanyang Technological University Singapore 639798 Singapore Department of Biomedical Engineering University of Houston Houston Texas 77024 United States School of Electrical and Electronic Engineering Yonsei University Seoul 03722 Republic of Korea Department of Electrical and Computer Engineering The University of Texas at Austin Austin Texas 78712 United States Microelectronics Research Center The University of Texas at Austin Austin Texas 78758 United States Department of Chemistry and Biochemistry California NanoSystems Institute and Department of Psychiatry and Biobehavioral Sciences Semel Institute for Neuroscience and Human Behavior and Hatos Center for Neuropharmacology University of California Los Angeles Los Angeles California 90095 United States Colloid Chemistry Department Max Planck Institute of Colloids and Interfaces 14476 Potsdam Germany Department of Chemical Engineering Stanford University Stanford California 94305 United States Laboratory of Organic Electronics Department of Science and Technology Campus Norrköping Linköping University 83 Linköping Sweden Wallenberg Initiative Materials Science for Sustainability (WISE) and Wallenberg Wood Science Center (WWSC) SE-100 44 Stockholm Sweden Department of Materials Science and Engineering Stanford University Stanford California 94301 United States Department of Biomedical Engineering and Department of Materials Science and Engineering Carnegie Mellon University Pittsburgh Pennsylvania 15213 United States Department of Bioengineering University of California Los Angeles Los Angeles California 90095 United States School of Chemistry Chemical Engineering and Biotechnology Nanyang Technological University Singapore 637457 Singapore Nanobionics Group Department of Chemical and Biological Engineering Monash University Clayton Australia 3800 Monash

Humans rely increasingly on sensors to address grand challenges and to improve quality of life in the era of digitalization and big data. For ubiquitous sensing, flexible sensors are developed to overcome the limitations of conventional rigid counterparts. Despite rapid advancement in bench-side research over the last decade, the market adoption of flexible sensors remains limited. To ease and to expedite their deployment, here, we identify bottlenecks hindering the maturation of flexible sensors and propose promising solutions. We first analyze continued...challenges in achieving satisfactory sensing performance for real-world applications and then summarize issues in compatible sensor-biology interfaces, followed by brief discussions on powering and connecting sensor networks. Issues en route to commercialization and for sustainable growth of the sector are also analyzed, highlighting environmental concerns and emphasizing nontechnical issues such as business, regulatory, and ethical considerations. Additionally, we look at future intelligent flexible sensors. In proposing a comprehensive roadmap, we hope to steer research efforts towards common goals and to guide coordinated development strategies from disparate communities. Through such collaborative

关键词： soft materials mechanics engineering flexible electronics conformable sensors bioelectronics human-machine interfaces body area sensor networks technology translation sustainable electronics

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A GaSb/In0.4Ga0.6As Heterojunction Z-Shaped Tunnel Field-Effect Transistor with High Performance

A GaSb/In0.4Ga0.6As Heterojunction Z-Shaped Tunnel Field-Eff...

引用

International Conference on asic

作者： Jiarui Bao Shuyan Hu Guangxi Hu Laigui Hu Ran Liu Lirong Zheng State Key Laboratory of ASIC & System School of Information Science and Technology Fudan University Shanghai China

A GaSb/ln 0.4 Ga 0.6 As heterojunction Z-Shaped TFET is proposed and investigated by a TCAD simulation tool. A low subthreshold swing (16.2 mV/dec) is obtained. A large on- state current, I on (748μA/μm) and a large on-and off-state current ratio, I on /I off (7.48×10 9 ) are achieved for the device under a drain bias of 0.5 V. In addition, the temperature dependence of the proposed device is presented, and it shows that low temperatures favor for I on /I off . It is also revealed that the on-state current can be enhanced by adjusting the device geometry. Moreover, the device can work at a low supply voltage (~0.2 V).

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