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International Conference on Solid-state and Integrated Circuit Technology

作者： YX. Chen J. Liu K. Xiao A. Zaslavsky S. Cristoloveanu FY. Liu B. Li J. Wan State key lab of ASIC and System School of Information Science and Engineering Fudan University Shanghai China Brown University Providence RI USA IMEP-LAHC INP-Grenoble/Minatec CS 50257 Grenoble France Institute of Microelectronics Chinese Academy of Sciences Beijing China

ISBN: (数字)9781728162355

ISBN: (纸本)9781728162362

A unijunction transistor based on fully-depleted silicon-on-insulator substrate is proposed. The device structure is similar to a junction field effect transistor. By conducting the TCAD simulation, we observe sharp switching and large hysteresis in emitter current-emitter voltage curves with the turn-on voltage linearly controlled by the second base voltage. The operation of the device is mainly determined by the emitter-channel PN junction, which is induced by the backgate voltage. The impact of the backgate voltage on the electrical characteristics is analyzed by changes in the channel potential.

关键词： Substrates Silicon Junctions Hysteresis Electric potential Switches Voltage control

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MoS2dual-gate transistors with electrostatically doped contacts

arXiv

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arXiv 2019年

作者： Liao, Fuyou Sheng, Yaocheng Guo, Zhongxun Tang, Hongwei Wang, Yin Zong, Lingyi Chen, Xinyu Riaud, Antoine Zhu, Jiahe Xie, Yufeng Chen, Lin Zhu, Hao Sun, Qingqing Zhou, Peng Jiang, Xiangwei Wan, Jing Bao, Wenzhong Zhang, David Wei State Key Laboratory of ASIC and System School of Microelectronics Fudan University Shanghai200433 China State Key Laboratory of ASIC and System School of Information Science and Engineering Fudan University Shanghai200433 China School of Electronic Science and Engineering Nanjing University Nanjing210093 China Institute of Semiconductors Chinese Academy of Sciences Beijing100083 China

Two-dimensional (2D) transition metal dichalcogenides (TMDs) such as molybdenum disulfide (MoS2) have been intensively investigated because of their exclusive physical properties for advanced electronics and optoelectronics. In the present work, we study the MoS2transistor based on a novel tri-gate device architecture, with dual-gate (Dual-G) in the channel and the buried side-gate (Side-G) for the source/drain regions. All gates can be independently controlled without interference. For a MoS2sheet with a thickness of 3.6 nm, the Schottky barrier (SB) and non-overlapped channel region can be effectively tuned by electrostatically doping the source/drain regions with Side-G. Thus, the extrinsic resistance can be effectively lowered, and a boost of the ON-state current can be achieved. Meanwhile, the channel control remains efficient under the Dual-G mode, with an ON-OFF current ratio of 3×107and subthreshold swing of 83 mV/decade. The corresponding band diagram is also discussed to illustrate the device operation mechanism. This novel device structure opens up a new way toward fabrication of high-performance devices based on 2D-TMDs. Copyright © 2019, The Authors. All rights reserved.

关键词： Sulfur compounds

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Improved Polarization Retention of BiFeO3 Thin Films Using GdScO3(110)Substrates

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Chinese Physics Letters 2017年第2期34卷 104-107页

作者： Shuai-Qi Xu Yan Zhang Hui-Zhen Guo Wen-Ping Geng Zi-Long Bai An-Quan Jiang State Key Laboratory of ASIC and System School of MicroelectronicsFudan UniversityShanghai 200433

Epitaxial ferroelectric one direction over the thin fihns on single-crystal substrates generally show a preferred domain orientation in other in demonstration of a poor polarization retention. This behavior will affect their application in nonvolatile ferroelectric random access memories where bipolar polarization states are used to store the logic 0 and 1 data. Here the retention characteristics of BiFe03 thin films with Srftu03 bottom electrodes on both GdSc03 （110） and SrTiO3 （100） substrates are studied and compared, and the results of piezoresponse force microscopy provide a long time retention property of the films on two substrates. It is found that bismuth ferrite thin films grown on GdScO3 substrates show no preferred domain variants in comparison with the preferred downward polarization orientation toward bottom electrodes on SrTi03 substrates. Tile retention test from a positive-up domain to a negative-down domain using a signal generator and an oscilloscope coincidentally shows bistable polarization states on the GdSeOa substrate over a measuring time of 500s, unlike the preferred domain orientation on SrTi03, where more than 65~o of upward domains disappear after 1 s. In addition, different sizes of domains have been written and read by using the scanning tip of piezoresponse force microscopy, where the polarization can stabilize over one month. This study paves one route to improve the polarization retention property through the optimization of the lattice-mismatched stresses between films and substrates.

关键词： BFO GSO Improved Polarization Retention of BiFeO3 Thin Films Using GdScO3 Substrates SRO 110

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Correction to: Temperature tunable like-electromagnetically induced transparency in metasurface with vanadium dioxide

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The European Physical Journal Plus 2021年第8期136卷 1-1页

作者： Ning, Renxia Xiao, Zhinqiang Chen, Zhenhai Huang, Wei School of Information Engineering Huangshan University Huangshan China Engineering Technology Research Center of Intelligent Microsystems Huangshan China State Key Laboratory of ASIC and System Shanghai Institute of Intelligent Electronics and Systems School of Microelectronics Fudan University Shanghai China

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Antimony thin films demonstrate programmable optical non-linearity

arXiv

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arXiv 2020年

作者： Cheng, Zengguang Milne, Tara Salter, Patrick Kim, Judy S. Humphrey, Samuel Booth, Martin Bhaskaran, Harish Department of Materials University of Oxford Parks Road OxfordOX1 3PH United Kingdom State Key Laboratory of ASIC and System School of Microelectronics Fudan University Shanghai200433 China Department of Engineering Science University of Oxford Parks Road OxfordOX1 3PJ United Kingdom

The use of metals of nanometer dimensions to enhance and manipulate light-matter interactions for a range of emerging plasmonics-enabled nanophotonic and optoelectronic applications is an interesting, yet not highly explored area of research outside of plasmonics1,2. Even more importantly, the concept of an active metal, i.e. a metal that can undergo an optical non-volatile transition has not been explored. Nanostructure-based applications would have unprecedented impact on both the existing and future of optics with the development of active and nonlinear optical tunabilities in single elemental metals3-5. Compared to alloys, pure metals have the material simplicity and uniformity;however single elemental metals have not been viewed as tunable optical materials, although they have been explored as viable electrically switchable materials. In this paper we demonstrate for the first time that antimony (Sb), a pure metal, is optically distinguishable between two programmable states as nanoscale thin films. We then show that these states are stable at room temperature, and the states correspond to the crystalline and amorphous phases of the metal. Crucially from an application standpoint, we demonstrate both its optoelectronic modulation capabilities as well as speed of switching using single sub-picosecond (ps) pulses. The simplicity of depositing a single metal portends its potential for use in applications ranging from high speed active metamaterials to photonic neuromorphic computing, and opens up the possibility for its use in any optoelectronic application where metallic conductors with an actively tunable state is important. Copyright © 2020, The Authors. All rights reserved.

关键词： Plasmonics

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Design and implementation of Serial ATA pbysical layer on FPGA

Design and implementation of Serial ATA pbysical layer on FP...

引用

International Conference on asic

作者： Xie Xie Qinghua Duan Jiafeng Liu Jian Wang Jinmei Lai State Key laboratory of ASIC and System Fudan University Shanghai China Chengdu Sino Microelectronics Technology Co. Ltd Shanghai China

An increasing number of high-performance computing system developed on FPGA devices need access to mass storage devices for storing data, the serial ATA protocol is widely used in the modern computer systems for transferring data between the host and hard disks or solid-state drives. This paper describes the design and implementation of serial ATA physical layer core based on the Xilinx GTX transceiver. With the method of cyclically changing the GTX line rate, the SATA hard disk with different line rate can be automatically identified and linked, realizing backward compatibility. An embedded system has also been developed for validating the functionality of our SATA physical layer core. We test our physical layer core with connecting our core to both SATA3 and SATA2 hard disks. The experimental result has indicated our core can not only provide the whole functionality required by the SATA physical layer, but also utilize very few logic resources on FPGA.

关键词： Physical layer Transceivers Field programmable gate arrays Hard disks Crystals Clocks IP networks

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Continuous-time digital twin with analog memristive neural ordinary differential equation solver

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Science advances 2025年第22期11卷 eadr7571页

作者： Hegan Chen Jichang Yang Jia Chen Songqi Wang Shaocong Wang Dingchen Wang Xinyu Tian Yifei Yu Xi Chen Yinan Lin Qifan Zhu Yangu He Xiaoshan Wu Yi Li Xinyuan Zhang Ning Lin Meng Xu Xumeng Zhang Xiaojuan Qi Zhongrui Wang Han Wang Dashan Shang Qi Liu Kwang-Ting Cheng Ming Liu Department of Electrical and Electronic Engineering the University of Hong Kong Hong Kong China. School of Microelectronics Southern University of Science and Technology Shenzhen 518055 China. Center for Advanced Semiconductors and Integrated Circuits the University of Hong Kong Hong Kong China. Department of Electronic and Computer Engineering the Hong Kong University of Science and Technology Hong Kong China. School of Integrated Circuits Hubei Key Laboratory for Advanced Memories Huazhong University of Science and Technology Wuhan 430074 China. State Key Laboratory of Integrated Chips and Systems Frontier Institute of Chip and System Fudan University Shanghai 200433 China. State Key Lab of Fabrication Technologies for Integrated Circuits and Key Laboratory of Microelectronic Devices & Integrated Technology Institute of Microelectronics Chinese Academy of Sciences Beijing 100029 China. University of Chinese Academy of Sciences Beijing 100049 China.

Digital twins, which replicate real-world entities through computational models, are transforming manufacturing and automation. While recent advances in machine learning have enabled data-driven digital twin development using discrete-time data and finite-depth models on digital hardware, these approaches face significant limitations. They struggle to capture continuous-time dynamics and model complex systems, and suffer from substantial time and energy overheads due to physically separated storage and processing as well as frequent analog-digital (A/D) conversions. Here, we propose a memristive neural ordinary differential equation (ODE) solver for digital twins. Our approach is intrinsically time-continuous using infinite-depth neural networks to model complex dynamics. Fully analog memristor arrays collocate storage and computation, addressing the von Neumann bottleneck and reducing A/D conversion requirements. We experimentally validate our solver on digital twins of HP variable-resistor model and Lorenz96 dynamics, demonstrating a 166.5-fold/369.3-fold speedup and a 499.0-fold/673.9-fold improvement in energy efficiency, respectively. This work paves the way to future digital twins for Industry 4.0.

关键词： Continuous time systems

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An FPGA-based log-structure Flash memory system for space exploration

An FPGA-based log-structure Flash memory system for space ex...

引用

International Conference on asic

作者： Huanlin Luo Yunbo Liu Hai Ren Tiantian Zhang Jian Wang Jinmei Lai State Key Laboratory of ASIC&System Fudan University Shanghai China Chengdu Sino Microelectronics Technology Co. Ltd Chengdu China

In space exploration, the flash memory system on the detector needs to retrieve the recorded data and transmit it to the Earth. In order to make better use of valuable transmission time, researchers hope that the system has more accurate retrieval capabilities. In previous space-borne flash memory system designs, the indexing accuracy of the system was limited by the limited RAM capacity. In this paper, we propose an FPGA-based system design method. This method uses a mechanism of the log structure to manage the flash to save RAM capacity. It can achieve very small data granularity, and each data particle has expandable index information, which improves the system index accuracy with limited RAM capacity. The experimental results show that the proposed system implements a 512Gb flash memory system with page-scale data granularity. It only requires 2.7Mb of RAM capacity overhead for indexing. The system has an average write rate of 329.3 Mbps and an average index latency of 39.3 us.

关键词：

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Distributed machine learning for wireless communication networks: Techniques, architectures, and applications

arXiv

引用

arXiv 2020年

作者： Hu, Shuyan Chen, Xiaojing Ni, Wei Hossain, Ekram Wang, Xin State Key Laboratory of ASIC and System School of Information Science and Technology Fudan University Shanghai200433 China Shanghai Institute for Advanced Communication and Data Science Shanghai University Shanghai200444 China SydneyNSW2122 Australia Department of Electrical and Computer Engineering University of Manitoba WinnipegMBR3T 5V6 Canada State Key Laboratory of ASIC and System Shanghai Institute for Advanced Communication and Data Science Department of Communication Science and Engineering Fudan University Shanghai200433 China

Distributed machine learning (DML) techniques, such as federated learning, partitioned learning, and distributed reinforcement learning, have been increasingly applied to wireless communications. This is due to improved capabilities of terminal devices, explosively growing data volume, congestion in the radio interfaces, and increasing concern of data privacy. The unique features of wireless systems, such as large scale, geographically dispersed deployment, user mobility, and massive amount of data, give rise to new challenges in the design of DML techniques. There is a clear gap in the existing literature in that the DML techniques are yet to be systematically reviewed for their applicability to wireless systems. This survey bridges the gap by providing a contemporary and comprehensive survey of DML techniques with a focus on wireless networks. Specifically, we review the latest applications of DML in power control, spectrum management, user association, and edge cloud computing. The optimality, scalability, convergence rate, computation cost, and communication overhead of DML are analyzed. We also discuss the potential adversarial attacks faced by DML applications, and describe state-of-the-art countermeasures to preserve privacy and security. Last but not least, we point out a number of key issues yet to be addressed, and collate potentially interesting and challenging topics for future research. Copyright © 2020, The Authors. All rights reserved.

关键词： Data privacy

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Corrigendum to “Dynamic opposite learning enhanced teaching–learning-based optimization” [Knowl.-Based Syst. 188 (2020) 104966]

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Knowledge-Based systems 2021年 216卷

作者： Yunlang Xu Zhile Yang Xiaoping Li Huazhou Kang Xiaofeng Yang School of Mechanical Science and Engineering Huazhong University of Science and Technology Wuhan 430074 China Shenzhen Institutes of Advanced Technology Chinese Academy of Sciences Shenzhen 518055 China State Key Laboratory of ASIC and System School of Microelectronics Fudan University Shanghai 200433 China

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