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Reward-modulated spike-timing-dependent plasticity in van der Waals ferroelectric memtransistor for robotic recognition and tracking

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Science Bulletin 2025年

作者： Yi Cao Jinhao Liang Tao Liu Weihui Sang Yang Gan Honghong Li Yue Wang Zheng Ren Yuan Yu Zhou Xin Yukang Chen Xumeng Zhang Du Xiang Qi Liu State Key Laboratory of Integrated Chips and Systems Frontier Institute of Chip and System Fudan University Shanghai 200433 China School of Microelectronics Fudan University Shanghai 200433 China Shanghai Frontiers Science Research Base of Intelligent Optoelectronics and Perception Institute of Optoelectronics and Department of Materials Science Fudan University Shanghai 200433 China Zhangjiang Fudan International Innovation Center Fudan University Shanghai 200433 China

Reward-modulated spike-timing-dependent plasticity (R-STDP) is a promising biomimetic learning rule in neuromorphic intelligent systems for implementing tasks in variable environments. Nevertheless, realizing R-STDP in a single synaptic device for building compact and energy-efficient neuromorphic systems remains challenging. Here, we report a two-dimensional ferroelectric memtransistor to emulate the R-STDP learning rule by effectively reconfiguring the STDP and anti-STDP. The thermionic emission and tunneling behavior of charges at the ferroelectric interface can be regulated via vertical electric field in a multi-terminal manner, allowing for controllable polarization reversal of synaptic plasticity and transition between STDP and anti-STDP. This enables faithful realization of the R-STDP feature in a single device with energy consumption of ∼1.3 nJ (the lowest known to date), approximately 10 6 times lower than that of its complementary metal-oxide-semiconductor (CMOS) counterpart. By leveraging the synaptic characteristics in the hardware device, we construct spiking neural networks (SNNs) trained with R-STDP to perform robotic recognition and tracking tasks. The SNN achieves 95.1% accuracy on the MNIST dataset using only 8000 parameters, and faster convergence speed requiring only one data batch with 100% inference in the few-shot learning task. Moreover, a robotic arm motion control system configured with R-STDP exhibits 85.5% success rate in tracking both the static and moving targets, illustrating its outstanding adaptability to the dynamic environments. This work provides a potential hardware building block to support compact neuromorphic systems for the application of interactive artificial intelligence agents.

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Development of PZT-based 18 MHz 2D pMUT array with PDMS waveguide

Development of PZT-based 18 MHz 2D pMUT array with PDMS wave...

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IEEE Symposium (IUS) Ultrasonics

作者： Xu-bo Wang Le-ming He Wen-juan Liu Shu-ren Song Wei-Jiang Xu Qian Cheng Antoine Riaud Jun-Yan Ren Jia Zhou State Key Laboratory of ASIC and System School of Microelectronics Fudan University Shanghai P. R. China Université Polytechnique Hauts-de-France INSA Hauts-de-France CNRS Univ. Lille YNCREA Centrale Lille UMR 8520 IEMN- DOAE Valenciennes France Institute of Acoustics School of Physics Science and Engineering Tongji University Shanghai P.R. China

ISBN: (数字)9781728154480

ISBN: (纸本)9781728154497

For high-resolution ultrasonic imaging, an 18 MHz lead zirconate titanate (PZT) based two-dimensional (2D) piezoelectric micromachined ultrasonic transducers (pMUTs) array with polydimethylsiloxane (PDMS) waveguide are developed. The array is composed of 8 × 16 elements with a pitch of 75 μm and each element can be independently electrically excited. The structure is fabricated by micromachining. The resonance frequency obtained in air is 18.3 MHz and 18 MHz with and without PDMS waveguide filling, respectively. The displacement responses show a sensitivity of 2.6 nm/V and a bandwidth of 14% with PDMS waveguide.

关键词： Ultrasonic transducers Sensitivity Ultrasonic imaging Two dimensional displays Ultrasonic transducer arrays Bandwidth Titanium compounds

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Atomic crystals resistive switching memory

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Chinese Physics B 2017年第3期26卷 1-16页

作者：刘春森张卫周鹏 State Key Laboratory of ASIC and System Department of Microelectronics Fudan University Shanghai 200433 China

Facing the growing data storage and computing demands, a high accessing speed memory with low power and non- volatile character is urgently needed. Resistive access random memory with 4F2 cell size, switching in sub-nanosecond, cycling endurances of over 1012 cycles, and information retention exceeding 10 years, is considered as promising next- generation non-volatile memory. However, the energy per bit is still too high to compete against static random access memory and dynamic random access memory. The sneak leakage path and metal film sheet resistance issues hinder the further scaling down. The variation of resistance between different devices and even various cycles in the same device, hold resistive access random memory back from commercialization. The emerging of atomic crystals, possessing fine interface without dangling bonds in low dimension, can provide atomic level solutions for the obsessional issues. Moreover, the unique properties of atomic crystals also enable new type resistive switching memories, which provide a brand-new direction for the resistive access random memory.

关键词： atomic crystals two-dimensional materials resistive switching memory

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Erratum: Assessment of 180 nm double SOI technology for analog front-end design with back-gate voltage

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Journal of Instrumentation 2024年第10期19卷 E10001-E10001页

作者： Y. Li F. Liu B. Lu Z. Li S. Chen C. Zhang H. Zhu X. Yao J. Bu J. Wan Y. Xu S. Cristoloveanu B. Li J. Luo T. Ye Institute of Microelectronics of the Chinese Academy of Sciences 3 Beitucheng West Road Beijing 100029 China University of Chinese Academy of Sciences 19 A Yuquan Road Beijing 100049 China Key Laboratory of Science and Technology on Silicon Devices Chinese Academy of Sciences 3 Beitucheng West Road Beijing 100029 China State Key Laboratory of Particle Detection and Electronics of China 19 B Yuquan Road Beijing 100049 China Institute of High Energy Physics Chinese Academy of Science 19 B Yuquan Road Beijing 100049 China State key lab of ASIC and System Fudan University No. 825 Zhangheng Road Shanghai 200433 China College of Integrated Circuit Science and Engineering Nanjing University of Posts and Telecommunication No. 9 Wenyuan Road Nanjing 210023 China Guangdong Greater Bay Area Institute of Integrated Circuit and System No. 136 Kaiyuan Avenue Guangzhou 510535 China

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Complementary Memory Cell Based on Field-Programmable Ferroelectric Diode for Ultra-Low Power Current-SA Free BNN Applications

Complementary Memory Cell Based on Field-Programmable Ferroe...

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International Electron Devices Meeting (IEDM)

作者： Qing Luo Bing Chen Rongrong Cao Xiaoyong Xue Keji Zhou Jianguo Yang Xu Zheng Haoran Yu Jie Yu Tiancheng Gong Xiaoxin Xu Peng Yuan Xiaoyan Li Lu Tai Qi Liu Hangbing Lv Ming Liu Key Laboratory of Microelectronics Devices and Integrated Technology Institute of Microelectronics of the Chinese Academy of Sciences Beijing China The College of Information Science and Electronic Engineering Zhejiang University Hangzhou China State Key Laboratory of ASIC and System Fudan University Shanghai China

In this work, we proposed a complementary memory cell with 2T4D XNOR structure for computing in memory (CIM) applications. Firstly, a field-programmable diode (FPD) was demonstrated with a W/Hf 0 5Zr 0 5O 2 (HZO)/W structure. After analyzing the mechanism of FPD device, a 1T2D structure was proposed for voltage-output memory application featuring stable voltage ratio (~0.9 V), read disturbance immunity (>10 9 ) and ultra-low leakage current (2) and superior efficiency (387 TOPS/W).

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Efficient Performance Trade-off Modeling for Analog Circuit based on Bayesian Neural Network

Efficient Performance Trade-off Modeling for Analog Circuit ...

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IEEE International Conference on Computer-Aided Design

作者： Zhengqi Gao Jun Tao Fan Yang Yangfeng Su Dian Zhou Xuan Zeng ASIC & System State Key Lab School of Microelectronics Fudan University Shanghai China School of Mathematical Sciences Fudan University Shanghai China University of Texas at Dallas Dallas USA

In this paper, we propose an efficient performance trade-off modeling method for analog circuit based on Bayesian Neural Network (BNN). First, we use a single BNN to simultaneously model multiple performances of interest (PoIs) of an analog circuit. This BNN model can be trained by using a novel automatic differential variational inference (ADVI) method with affordable computational cost. Next, the performance trade-off model can be extracted by embedding BNN into Bayesian optimization framework combined with a modified multi-objective evolutionary method. Since the correlations among different PoIs are implicitly encoded in the BNN model, the proposed method can capture the performance trade-off model efficiently and accurately. The numerical experiments demonstrate that compared to the state-of-the-art algorithms, the proposed method can achieve up to 2× runtime reduction without surrendering any accuracy.

关键词： Computational modeling Analog circuits Pareto optimization Integrated circuit modeling Bayes methods Neural networks

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Multimode baseband signal processing module of a digital polar transmitter for IoT applications

Multimode baseband signal processing module of a digital pol...

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2018 IEEE MTT-S International Wireless Symposium, IWS 2018

作者： Liu, Yangzi Li, Tong Ma, Lei Yin, Yun Xu, Hongtao Yan, Na Min, Hao Department of Microelectronics State Key Laboratory of ASIC and System Fudan University No.825 Zhang-heng Road Pudong New District Shanghai201203 China

ISBN: (纸本)9781538663462

This paper presents a multimode baseband signal processing circuit of a digital polar transmitter for IoT applications. In order to support 802.11ah and NB-IoT standards with different signal bandwidths and wide frequency span, the asynchronous design is introduced to align different sampling clocks. Half-band filters are optimized through three aspects to reduce die area and power consumption. Moreover, digital pre-distortion technique is employed to successfully linearize the system. This chip performs frequency up-sampling, filtering operations, CORDIC, digital pre-distortion (DPD) to push image far way and improve signal-to-noise ratio (SNR). © 2018 IEEE.

关键词： Signal to noise ratio

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Low-frequency charge trapping and bistable domain switching in Mg-doped LiNbO3 single crystal films

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Journal of Applied Physics 2018年第12期124卷 124103-124103页

作者： Zhang, Yan Jiang, An Quan State Key Laboratory of ASIC and System School of Microelectronics Fudan University Shanghai200433 China

Lithium niobate single-crystal films are interesting for the integration of optoelectronic and surface acoustic wave devices. However, the domains have the preferred orientations, which limit their application in non-volatile memory devices. Here, we fabricated 5% Mg-doped LiNbO3 single-crystal films by ion-slicing of surface layers of bulk lithium niobate single-crystals. The Mg doping can improve the electrical performance of the films with the appearance of a definitive coercive voltage irrespective of applied voltages in polarization-voltage (P-V) hysteresis loops, unlike the undoped films where the apparent coercive voltages in P-V hysteresis loops equal the maximum applied voltages. Subsequent unipolar pulse stressing shows comprehensive charge injection into the films to occur at repetitive periodicities below 0.5 s that can symmetrize P-V hysteresis loops along the voltage axis. The injected charge in contradiction to an internal imprint field can change domain switching dynamics that can be described by the model of a non-ferroelectric passive layer in series with an ideal ferroelectric layer. The dielectric permittivities at low frequencies show the Maxwell-Wager relaxation of the injected charge with the broad distribution of relaxation times. As the periodicity is above 2 s, the injected charge within each cycle can be driven out of the film during intermittent time by the imprint field. This study shows the possibility of charge injection in stabilization of bipolar domain orientations in LiNbO3 single-crystal films. © 2018 Author(s).

关键词： Niobium compounds

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Nonvolatile Crossbar 2D2R TCAM with Cell Size of 16.3 F2 and K-means Clustering for Power Reduction

Nonvolatile Crossbar 2D2R TCAM with Cell Size of 16.3 F2 and...

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2018 IEEE Asian Solid-state Circuits Conference, A-SSCC 2018

作者： Zhou, Keji Xue, Xiaoyong Yang, Jianguo Xu, Xiaoxin Lv, Hangbing Wang, Mingyu Jing, Mingre Liu, Wenjun Zeng, Xiaoyang Chung, Steve S. Li, Jing Liu, Ming State Key Laboratory of ASIC and System Fudan University China Key Laboratory of Microelectronics Devices and Integrated Technology Institute of Microelectronics Chinese Academy of Sciences China National Chiao Tung University Taiwan University of Wisconsin Madison United States

ISBN: (纸本)9781538664124

A 28nm 16Kb nonvolatile ternary content addressable memory (nvTCAM) test chip based on logic-compatible resistive memory (ReRAM) is demonstrated with high density and low power for packet routing in network applications. The crossbar array exhibits a smallest cell size of 16.3F2 by using 2-diode-2-ReRAM (2D2R) nvTCAM cell, useful for further 3-dimension (3D) stacking. K-means clustering is employed to allocate the storage of routing table entry for given bank count. Then the search of destination IP address can be classified and confined to a specific bank, reducing active banks for power saving. Evaluations show >3X improvement in cell density and >70% reduction in search energy with limited overhead in silicon area for bank count of four. © 2018 IEEE.

关键词： Machine learning

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0.04 degree-per-hour MEMS disk resonator gyroscope with high-quality factor (510 k) and long decaying time constant(74.9 s)

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Microsystems & Nanoengineering 2018年第1期4卷 46-56页

作者： Qingsong Li Dingbang Xiao Xin Zhou Yi Xu Ming Zhuo Zhanqiang Hou Kaixuan He Yongmeng Zhang Xuezhong Wu College of Intelligence Science National University of Defense TechnologyChangsha 410073China Laboratory of Science and Technology on Integrated Logistics Support National University of Defense TechnologyChangsha 410073China State Key Laboratory of ASIC and System School of MicroelectronicsFudan UniversityShanghai 200433China East China Institute of Photo-Electron IC Bengbu 233042China

The disk resonator gyroscope is an attractive candidate for high-performance MEMS *** gyroscope consists of a sensor and readout electronics,and the characteristics of the sensor directly determine the *** the sensor,a high-quality factor and long decaying time constant are the most important characteristics required to achieve high *** report a disk resonator gyroscope with a measured quality factor of 510 k and decaying time constant of 74.9 s,which is a record for MEMS silicon disk resonator gyroscopes,to the best of our *** improve the quality factor of the DRG,the quality factor improvement mechanism is first analyzed,and based on this mechanism two stiffness-mass decoupled methods,i.e.,spoke length distribution optimization and lumped mass configuration design,are proposed and demonstrated.A disk resonator gyroscope prototype is fabricated based on these design strategies,and the sensor itself shows an angle random walk as low as 0.001°/√h,demonstrating true potential to achieve navigation-grade *** gyroscope with readout electronics shows an angle random walk of 0.01°/√h and a bias instability of 0.04°/h at room temperature without compensation,revealing that the performance of the gyroscope is severely limited by the readout electronics,which should be further *** expect that the quality factor improvement methods can be used in the design of other MEMS gyroscopes and that the newly designed DRG can be further improved to achieve navigation-grade performances for high-end industrial,transportation,aerospace,and automotive applications.

关键词： resonator constant attractive

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