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2017 IEEE 12th International Conference on asic

作者： Mingyue He Sitong Bu Daming Huang State Key Laboratory of ASIC and System School of MicroelectronicsFudan University

ISBN: (纸本)9781509066261;9781509066254

The surface effect on the IV characteristics of back-gated MOSFETs is of great importance since it directly links to the sensitivity of a *** is also important to the instability of any back-gated devices with top surface exposed to the *** this presentation,we propose an analytical model to describe the surface effect,i.e.,the effect of surface adsorption by molecules on the potential of a long channel back-gated *** model is used to calculate the drain current and its change induced by surface adsorption at different bias.A detailed calculation is made on back-gated multilayer Mo S2 channel MOSFETs with different channel thicknesses and device *** results are compared with TCAD simulations and a quantitative agreement is demonstrated.

关键词： Surface Effect on the Current-Voltage Characteristics of Back-Gated MoS2 Channel MOSFET

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A Novel Vertical Semi-Floating Gate Transistor for High-Density Ultrafast Memory 12

A Novel Vertical Semi-Floating Gate Transistor for High-Dens...

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2017 IEEE 12th International Conference on asic

作者： Zheng-Yuan Su Jun Wu Yao Yao Min-Zhi Lin Zhi-Yuan Ye Peng-Fei Wang State Key Laboratory of ASIC and System School of MicroelectronicsFudan University

ISBN: (纸本)9781509066261;9781509066254

A novel vertical device structure based on semi-floating gate concept is reported and simulated by Sentaurus technology computer aided design(TCAD) in this *** device can have the memory function with high density and *** device area can be reduced to be 4 F2(F is the feature size) and the operating speed of the novel device can be better than that of dynamic random access memory(DRAM).

关键词： vertical structure semi-floating-gate

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Effect of Surface and Interface on the Back-Gated n-MOSFET with Two-Dimensional MoS2 Channel Grown by Chemical Vapor Deposition

Effect of Surface and Interface on the Back-Gated n-MOSFET w...

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International Conference on Solid-state and Integrated Circuit Technology

作者： Fuyu Bai Hui Shen Daming Huang State Key Laboratory of ASIC and System School of Microelectronics Fudan University Shanghai China

Two-dimensional semiconductor channel MOSFETs are often suffering from the extrinsic effects such as the traps in surface and interfaces. These traps may lead to the instability of the device characteristics. To find the location of the dominant traps is a difficult but important task. In this paper, we present the current-voltage, current-time, and low frequency noise characteristics of the back-gated n-MOSFET with MoS 2 channel grown by chemical vapor deposition. The experimental results measured under vacuum condition and at different temperatures make us possible to trace the location of the dominant traps leading to the device instability. The results show that, in addition to the surface effect observed in the ambient environment, both the channel/gate-oxide interface and the metal contacts have important effect on the electric characteristic under vacuum condition, with the source contact being dominant for the device investigated.

关键词： Temperature measurement Molybdenum Sulfur Current measurement MOSFET Temperature Surface treatment

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Graphite Planar Resistive Switching Memory and its application in pattern recognition 12

Graphite Planar Resistive Switching Memory and its applicati...

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2017 IEEE 12th International Conference on asic

作者： Lin-Jie Yu Tian-Yu Wang Lin Chen Hao Zhu Qing-Qing Sun Shi-Jin Ding Peng Zhou David Wei Zhang State Key Laboratory of ASIC and System School of MicroelectronicsFudan University

ISBN: (纸本)9781509066261;9781509066254

Resistive switching memory with a planar graphene nanoribbon structure has shown steady memory *** mechanically exfoliating the graphene sheet over a layer of 300 nm Si O2 substrate,the device was fabricated with one step of electron beam lithography and physical vapor *** device has an on/off ratio over 103,and exhibits multilevel resistive switching characteristics,making it possible to act as a synaptic *** we designed an artificial neuron network(ANN) to recognize images of 6 different letters,and the images were successfully *** result proposes a way to implement neuromorphic computation with carbon electronics.

关键词： Graphite Planar Resistive Switching Memory and its application in pattern recognition

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Low Frequency Noise Characteristics in p-Type MOSFET with Multilayer WSe2 Channel and Al2O3 Back Gate Dielectric 12

Low Frequency Noise Characteristics in p-Type MOSFET with Mu...

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2017 IEEE 12th International Conference on asic

作者： Hui Shen Huiwen Yuan Sitong Bu Mingyue He Daming Huang State Key Laboratory of ASIC and System School of MicroelectronicsFudan University

ISBN: (纸本)9781509066261;9781509066254

Transition metal dichalcogenide（TMDC） has recently attracted great attention for microelectronics and other *** this paper,we present the low frequency noise spectra in one of the typical TMDC,i.e.,the WSe channel p-type MOSFET with back-gated AlO *** observed that the noise power spectra all show 1/fa characteristic with a near *** analysis on the spectra in linear and saturation regions as a function of drain current demonstrates that the carrier number fluctuation is the dominant mechanism responsible to the *** correlated mobility fluctuation has a minor contribution in order to quantitatively account for the experimental *** also observed a correlated asymmetric effect of source and drain in both IV and noise spectra,showing that the Schottky contact may have contribution to the *** presentation provides new evidence that the noise spectra are a very powerful tool in the characterization of emerging semiconductor MOSFETs.

关键词： MOSFET Low Frequency Noise Characteristics in p-Type MOSFET with Multilayer WSe2 Channel and Al2O3 Back Gate Dielectric

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Organic–Inorganic Perovskite Memristors: Photoassisted Electroforming Method for Reliable Low‐Power Organic–Inorganic Perovskite Memristors (Adv. Funct. Mater. 17/2020)

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Advanced Functional Materials 2020年第17期30卷

作者： Xiaoning Zhao Zhongqiang Wang Wentong Li Shaowu Sun Haiyang Xu Peng Zhou Jiaqi Xu Ya Lin Yichun Liu Key Laboratory of UV Light‐Emitting Materials and Technology of Ministry of Education Northeast Normal University Changchun 130024 China State Key Laboratory of ASIC and System School of Microelectronics Fudan University Shanghai 200433 China

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Gradient piezoelectric composites for ultrasonic transducer design and imaging applications

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Journal of Materiomics 2025年第6期11卷

作者： Chenxue Hou Zhaoxi Li Chunlong Fei Qibo Lin Xiaofei Luo Xiongwei Wei Yiheng Yang Qi Lu Yi Quan Guangzhi Dong Zeyu Chen Xiaozhou Lü Weimin Bao Yintang Yang Shaanxi Provincial Key Laboratory of Integrated Circuit and System Integration Faculty of Integrated Circuit Xidian University Xi'an 710071 China The State Key Laboratory of Analog and Mixed-Signal VLSl Institute of Microelectronics University of Macau Macao 999078 China School of Aerospace Science and Technology Xidian University Xi'an 710071 China State Key Laboratory of Precision Manufacturing for Extreme Service Performance College of Mechanical and Electrical Engineering Central South University Changsha 410083 China College of Automotive and Mechanical Engineering Changsha University of Science and Technology Changsha 410114 China Hunan Province University Key Laboratory of Intelligent Testing and Control Technology for Engineering Equipment Changsha 410114 China School of Advanced Materials and Nanotechnology Xidian University Xi'an 710126 China Furong Laboratory (Precision Medicine) Changsha 410008 China National Engineering Research Center of Personalized Diagnostic and Therapeutic Technology Xiangya Hospital Central South University Changsha 410008 China Hunan Engineering Research Center of Skin Health and Disease Xiangya Hospital Central South University Changsha 410008 China

Ultrasonic imaging technology has advanced rapidly, the escalating demand for imaging quality has driven the continuous development of ultrasonic transducers featuring high-performance. Among them, the crucial factors constraining the further enhancement of imaging quality are the frequency of the device and the intensity of the echo signal. Piezoelectric composites have become a hotspot for ultrasonic transducers and imaging applications due to their excellent properties. However, due to the limitations of the accuracy of the cutting process, the development of piezoelectric/polymer composites is often undermined by undesirable pseudo-vibrations, especially in high-frequency applications, which will significantly reduce energy conversion efficiency. In this study, a novel design method of 1–3 piezoelectric composites with gradient nanoparticle doped polymer is proposed to eliminate the undesired lateral vibrations. Based on the optimized composites, a high-performance composite ultrasonic transducer with a center frequency of 8.51 MHz is prepared. Compared with the traditional composite transducer, the optimized transducer improves the echo voltage amplitude significantly, reaching nearly 3 times. The above advantages are further verified in high-quality ultrasound and photoacoustic imaging. The optimization method has valuable guidance for the design of high-frequency composite transducers, which have great potential in ultrasonic and photoacoustic imaging applications.

关键词： Piezoelectric composites Ultrasonic transducer Imaging applications Lateral vibration Finite element analysis

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ForgeEDA: A Comprehensive Multimodal Dataset for Advancing EDA

arXiv

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arXiv 2025年

作者： Shi, Zhengyuan Li, Zeju Ma, Chengyu Zhou, Yunhao Zheng, Ziyang Liu, Jiawei Pan, Hongyang Zhou, Lingfeng Li, Kezhi Zhu, Jiaying Yan, Lingwei He, Zhiqiang Xue, Chenhao Jiang, Wentao Yang, Fan Sun, Guangyu Yang, Xiaoyan Chen, Gang Shi, Chuan Chu, Zhufei Yang, Jun Xu, Qiang Department of Computer Science and Engineering The Chinese University of Hong Kong Sha Tin Hong Kong Faculty of Electrical Engineering and Computer Science Ningbo University Ningbo China School of Computer Science Beijing University of Posts and Telecommunications Beijing China School of Microelectronics State Key Laboratory of Integrated Chips and System Fudan University Shanghai China School of Electronic and Information Engineering Hangzhou Dianzi University Hangzhou China College of Computer Science and Technology Nanjing University of Aeronautics and Astronautics Nanjing China School of Integrated Circuits Peking University Beijing China School of Intergrated Circuits Southeast University Nanjing China National Center of Technology Innovation for EDA Nanjing China

We introduce ForgeEDA, an open-source comprehensive circuit dataset across various categories. ForgeEDA includes diverse circuit representations such as Register Transfer Level (RTL) code, Post-mapping (PM) netlists, And-Inverter Graphs (AIGs), and placed netlists, enabling comprehensive analysis and development. We demonstrate ForgeEDA’s utility by benchmarking state-of-the-art EDA algorithms on critical tasks such as Power, Performance, and Area (PPA) optimization, highlighting its ability to expose performance gaps and drive advancements. Additionally, ForgeEDA’s scale and diversity facilitate the training of AI models for EDA tasks, demonstrating its potential to improve model performance and generalization. By addressing limitations in existing datasets, ForgeEDA aims to catalyze breakthroughs in modern IC design and support the next generation of innovations in EDA. © 2025, CC BY.

关键词： Open source software

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Devices and applications of van der Waals heterostructures

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Journal of Semiconductors 2017年第3期38卷 44-52页

作者： Chao Li Peng Zhou David Wei Zhang State Key Laboratory of ASIC and System School of Microelectronics Fudan University Shanghai 200433 China

Van der Waals heterostructures,composed of individual two-dimensional material have been developing extremely *** of van der Waals heterostructures without the constraint of lattice matching and processing compatibility provides an ideal platform for fundamental research and new device *** review the approach of synthesis of van der Waals heterostructures,discuss the property of heterostructures and thoroughly illustrate the functional van der Waals heterostructures used in novel electronic and photoelectronic device.

关键词： van der Waals heterostructure two-dimensional material electronic and photoelectronic device

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A 0.07-ppm/Step Differential Digitally Controlled Crystal Oscillator With Guaranteed Monotonicity 12

A 0.07-ppm/Step Differential Digitally Controlled Crystal Os...

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2017 IEEE 12th International Conference on asic

作者： Xiaodong Liu Chenyang Kong Yifan Gao Zhangwen Tang ASIC&System State Key Laboratory School of MicroelectronicsFudan University

ISBN: (纸本)9781509066261;9781509066254

This paper presents a differential digitally controlled crystal oscillator with differential 26 MHz sine wave *** DCXO achieves a phase noise of-138 d Bc/Hz at 1 k Hz offset and-152 d Bc/Hz at 10 k Hz *** it has a ±32 ppm fine tuning range with 0.07 ppm tuning step,which satisfy the GSM,WLAN and WCDMA *** circuit is implemented by differential architecture with a cheap off-chip *** overall power consumption is 3.7 m A with 1.6 V power supply.

关键词： GSM WCDMA A 0.07-ppm/Step Differential Digitally Controlled Crystal Oscillator With Guaranteed Monotonicity

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