检索结果-内蒙古大学图书馆

Correction to: Ferroelectric behavior of La and Mn co-doped BiFeO3–PbTiO3 thin films prepared by sol–gel method

Journal of Sol-Gel Science and Technology 2018年第2期85卷 436-436页

作者： Chen, Dongfang Cheng, Jinrong State Key Laboratory of ASIC and System School of Microelectronics Fudan University Shanghai PR China School of Materials Science and Engineering Shanghai University Shanghai PR China

Correction to: J Sol-Gel Sci Technol https://***/10.1007/s10971-017-4549-y . In the original publication of the article, there is an error in the grant number of the National Natural Science Foundation of China in the acknowledgement section. The correct acknowledgement text has given below: Acknowledgements This work was supported by the National Natural Science Foundation of China (Grant no. 51672169) and the Innovational Foundation of Shanghai University (Grant. no. K.10-0110-13-009)

关键词：

来源：评论

学校读者我要写书评

暂无评论

Data Storage: Self‐Assembled Networked PbS Distribution Quantum Dots for Resistive Switching and Artificial Synapse Performance Boost of Memristors (Adv. Mater. 7/2019)

引用

Advanced Materials 2019年第7期31卷

作者： Xiaobing Yan Yifei Pei Huawei Chen Jianhui Zhao Zhenyu Zhou Hong Wang Lei Zhang Jingjuan Wang Xiaoyan Li Cuiya Qin Gong Wang Zuoao Xiao Qianlong Zhao Kaiyang Wang Hui Li Deliang Ren Qi Liu Hao Zhou Jingsheng Chen Peng Zhou National‐Local Joint Engineering Laboratory of New Energy Photovoltaic Devices Key Laboratory of Digital Medical Engineering of Hebei Province College of Electron and Information Engineering Hebei University Baoding 071002 P. R. China Department of Materials Science and Engineering National University of Singapore Singapore 117576 Singapore State Key Laboratory of ASIC and System School of Microelectronics Fudan University Shanghai 200433 China Key Laboratory of Microelectronic Devices and Integrated Technology Institute of Microelectronics Chinese Academy of Sciences Beijing 100029 China Giantec Semiconductor Inc. Shanghai 201203 China

来源：评论

学校读者我要写书评

暂无评论

Cr doping induced negative transverse magnetoresistance in Cd3As2 thin films

引用

Physical Review B 2018年第8期97卷 085303-085303页

作者： Yanwen Liu Rajarshi Tiwari Awadhesh Narayan Zhao Jin Xiang Yuan Cheng Zhang Feng Chen Liang Li Zhengcai Xia Stefano Sanvito Peng Zhou Faxian Xiu State Key Laboratory of Surface Physics and Department of Physics Fudan University Shanghai 200433 China Institute for Nanoelectronic Devices and Quantum Computing Fudan University Shanghai 200433 China School of Physics AMBER and CRANN Institute Trinity College Dublin 2 Ireland Department of Physics University of Illinois at Urbana-Champaign Champaign Illinois USA 61801 Materials Theory ETH Zurich Wolfgang-Pauli-Strasse 27 CH 8093 Zurich Switzerland Wuhan National High Magnetic Field Center Huazhong University of Science and Technology Wuhan 430074 China State Key Laboratory of ASIC and System Department of Microelectronics Fudan University Shanghai 200433 China Collaborative Innovation Center of Advanced Microstructures Nanjing 210093 China

The magnetoresistance of a material conveys various dynamic information about charge and spin carriers, inspiring both fundamental studies in physics and practical applications such as magnetic sensors, data storage, and spintronic devices. Magnetic impurities play a crucial role in the magnetoresistance as they induce exotic states of matter such as the quantum anomalous Hall effect in topological insulators and tunable ferromagnetic phases in dilute magnetic semiconductors. However, magnetically doped topological Dirac semimetals are hitherto lacking. Here, we report a systematic study of Cr-doped Cd3As2 thin films grown by molecular-beam epitaxy. With the Cr doping, Cd3As2 thin films exhibit unexpected negative transverse magnetoresistance and strong quantum oscillations, bearing a trivial Berry's phase and an enhanced effective mass. More importantly, with ionic gating the magnetoresistance of Cr-doped Cd3As2 thin films can be drastically tuned from negative to positive, demonstrating the strong correlation between electrons and the localized spins of the Cr impurities, which we interpret through the formation of magnetic polarons. Such a negative magnetoresistance under perpendicular magnetic field and its gate tunability have not been observed previously in the Dirac semimetal Cd3As2. The Cr-induced topological phase transition and the formation of magnetic polarons in Cd3As2 provide insights into the magnetic interaction in Dirac semimetals as well as their potential applications in spintronics.

关键词： Growth Magnetoresistance Dirac semimetal Density functional theory Shubnikov-de Haas effect

来源：评论

学校读者我要写书评

暂无评论

ELECTRICAL PROPERTIES OF ORGANIC FIELD-EFFECT TRANSISTORS BASED ON RIBBON-LIKE TIPS-PENTACENE CRYSTALS 13

ELECTRICAL PROPERTIES OF ORGANIC FIELD-EFFECT TRANSISTORS BA...

引用

2016 13th IEEE International Conference on Solid-state and Integrated Circuit Technology (ICSICT)

作者： Wei-Bo Chen Jian Zhang Yu-Long Jiang Guo-Dong Zhu State Key Lab of ASIC and System School of Microelectronics Fudan University Department of Material Science Fudan University

ISBN: (纸本)9781467397209

By the droplet-pinned crystallization method organic field-effect transistors with good device performance were fabricated based on ribbon-like TIPS-pentacene crystals The electrical property of OFETs with ribbon-like TIPS-pentacene crystals developed by differen concentration solutions is investigated. It is revealed tha large and highly textured crystals tended to result in high mobility and small electrical hysteresis window.

关键词： ELECTRICAL PROPERTIES OF ORGANIC FIELD-EFFECT TRANSISTORS BASED ON RIBBON-LIKE TIPS-PENTACENE CRYSTALS

来源：评论

学校读者我要写书评

暂无评论

Trapping and Detrapping of Oxide Border Traps in Al2O3 Gate Dielectric in MoS2 n-MOSFETs under PBTI Stress 13

Trapping and Detrapping of Oxide Border Traps in Al2O3 Gate ...

引用

2016 13th IEEE International Conference on Solid-state and Integrated Circuit Technology (ICSICT)

作者： Hui-Wen Yuan Hui Shen Jun-Jie Li Jinhai Shao Daming Huang Yi-Fang Chen P.F.Wang S.J.Ding Albert Chin Ming-Fu Li State Key Laboratory ASIC and System Department of Microelectronics Fudan University Department of Electronic Engineering Chiao-Tung University

ISBN: (纸本)9781467397209

In this paper,we report the positive bias temperature instability（PBTI） effects of the back-gated MoSn-MOSFET with AlO gate *** MoSwas used and all measurements are carried in vacuum to avoid the electric signal contamination by the top MoSsurface water or oxygen molecules *** the stress phase,the I-V curve shifts to the positive gate bias *** the recovery phase,the I-V shifts back completely to the fresh device *** indicates that voltage shift is purely due to trapping or detrapping of the oxide border traps at the MoS/AlO interface and no new traps are generated during the stress *** applying different stress voltage and measuring the I-V shift,we can calculate the oxide border trap energy density Ξ（E）,which has a peak value of 6×10cmeVat 0.035 eV above E of MoS conduction band.

关键词： MOSFET Trapping and Detrapping of Oxide Border Traps in Al2O3 Gate Dielectric in MoS2 n-MOSFETs under PBTI Stress

来源：评论

学校读者我要写书评

暂无评论

Bismuth‐Based Perovskite Heterostructures: In Situ Formation of Bismuth‐Based Perovskite Heterostructures for High‐Performance Cocatalyst‐Free Photocatalytic Hydrogen Evolution (Adv. Funct. Mater. 52/2020)

引用

Advanced Functional Materials 2020年第52期30卷 2070343-2070343页

作者： Yunqi Tang Chun Hong Mak Rugeng Liu Zuankai Wang Li Ji Haisheng Song Chunyan Tan Frédéric Barrière Hsien‐Yi Hsu School of Energy and Environment & Department of Materials Science and Engineering City University of Hong Kong Kowloon Tong Hong Kong P. R. China Shenzhen Research Institute of City University of Hong Kong Shenzhen 518057 P. R. China Department of Mechanical Engineering City University of Hong Kong Shenzhen Hong Kong P. R. China State Key Laboratory of ASIC and System School of Microelectronics Fudan University Shanghai 200433 P. R. China Wuhan National Laboratory for Optoelectronics (WNLO) and School of Optical and Electronic Information Huazhong University of Science and Technology 1037 Luoyu Road Wuhan Hubei 430074 P. R. China The Graduate School at Shenzhen Tsinghua University Shenzhen Guangdong 518055 P. R. China Univ Rennes CNRS ISCR (Institut des Sciences Chimiques de Rennes) – UMR 6226 Rennes F‐35000 France

In article number 2006919, Hsien‐Yi Hsu and co‐workers report a feasible solvent‐engineering technique for in‐situ formation of a lead‐free bismuth (Bi)‐based perovskite heterostructure for high‐performance co‐catalyst‐free photocatalytic hydrogen generation. Driven by energy band alignment across the interface of a phase junction, the air‐stable MA3Bi2I9/DMA3BiI6 perovskite heterostructure exhibits enhanced photoinduced charge separation, resulting in outstanding visible‐light‐induced photocatalytic activity for H2 evolution in aqueous hydrogen iodide solution.

关键词： co‐catalyst‐free in situ formation perovskite heterojunctions photocatalytic hydrogen evolution

来源：评论

学校读者我要写书评

暂无评论

Super-Clear Nanopaper from Agro-Industrial Waste for Green Electronics

引用

ADVANCED ELECTRONIC MATERIALS 2017年第5期3卷

作者： Tao, Jinsong Fang, Zhiqiang Zhang, Qing Bao, Wenzhong Zhu, Mingwei Yao, Yonggang Wang, Yanbin Dai, Jiaqi Zhang, Ariel Leng, Caroline Henderson, Doug Wang, Zhengyang Hu, Liangbing Department of Materials Science and Engineering University of Maryland College Park College Park MD 20742 USA State Key Laboratory of Pulp and Paper Engineering South China University of Technology Guangzhou 510640 China State Key Laboratory of ASIC and System School of Microelectronics Fudan University Shanghai 200433 China

Due to high volumes of production from the consumer electronics industry, it is highly desirable to develop green electronics comprised of biodegradable components derived from cheap resources or even agro-industrial wastes. In this work, a facile and benign production route is proposed to transform the agro-industrial waste sugarcane bagasse into value-added super-clear nano-paper for flexible and transparent electronics. High-value cellulose nanocrystals (CNCs) are isolated from abundant and inexpensive sugarcane bagasse by a one-step 2,2,6,6-tetramethylpiperidine-1-oxyl treatment, and the obtained CNCs are then used to fabricate a super-clear nanopaper substrate for next-generation flexible electronics. The super-clear nanopaper exhibits superior optical properties (91% transmittance and 1.4% transmission haze at 600 nm), excellent nanometer-scale surface roughness (3.08 nm), and good oxygen barrier properties (1.2 cm(3) mu m (m(2) day kPa)(-1) at 50% relative humidity). Moreover, proof-of-concept field-effect transistors with an on/off ratio of >10(3) are demonstrated on this super-clear nanopaper. The efficient and scalable production of value-added CNCs from bagasse waste coupled with advanced applications of CNC-based super-clear nanopaper in electronic devices presents a solution for the conversion of agricultural wastes to value-added electronic applications, which is beneficial for green electronics and recycling and ecoindustries.

关键词： biodegradable electronics cellulose nanocrystals flexible electronics sugarcane waste super clear transparent substrate

来源：评论

学校读者我要写书评

暂无评论

Study on electrical defects level in single layer two-dimensional Ta2O5

引用

Chinese Physics B 2016年第4期25卷 339-343页

作者：李大海宋雄飞胡林峰王子仪张荣君陈良尧张卫周鹏 Department of Optical Science and Engineering Fudan University Shanghai 200433 China ASIC & System State Key Laboratory School of Microelectronics Fudan University Shanghai 200433 China Department of Materials Science and Engineering Fudan University Shanghai 200433 China

Two-dimensional atomic-layered material is a recent research focus, and single layer Ta205 used as gate dielectric in field-effect transistors is obtained via assemblies of Ta205 nanosheets. However, the electrical performance is seriously affected by electronic defects existing in Ta2Os. Therefore, spectroscopic ellipsometry is used to calculate the transition energies and corresponding probabilities for two different charged oxygen vacancies, whose existence is revealed by x-ray photoelectron spectroscopy analysis. Spectroscopic ellipsometry fitting also calculates the thickness of single layer Ta2Os, exhibiting good agreement with atomic force microscopy measurement. Nondestructive and noncontact spectroscopic ellipsometry is appropriate for detecting the electrical defects level of single layer Ta2O5.

关键词： single layer electronic defects spectroscopic ellipsometry

来源：评论

学校读者我要写书评

暂无评论

Remote embedded simulation system for SW/HW co-design based on dynamic partial reconfiguration

Remote embedded simulation system for SW/HW co-design based ...

引用

International Conference on asic

作者： Jiaqi Gu Ruoyao Wang Jian Wang Jinmei Lai Qinghua Duan State Key Laboratory of ASIC and System Fudan University Shanghai China Fudan University Shanghai Shanghai CN Chengdu Sino Microelectronics Technology Co. Ltd

Projects involving both software design and hardware design are usually retarded by expensive equipments, complex simulation and challenging modification. In order to retrench the designers' time and economic costs in SW/HW (Software/Hardware) co-design simulation, this paper demonstrates a remote embedded simulation system to help multiple users manage and simulate their SW/HW co-design projects remotely while scheduling the access to on-chip FPGA resources. We built a small-scale, high-concurrent multiuser management service system on board. The system offers TCP/IP connection and transmission, flexible Wi-Fi network, secure multiuser information and files management, real-time task progress notification, compilation and execution of multiple programming languages, run-time FPGA configuration and simulation, which considerably augments the exploitability for embedded simulation service. Meanwhile, we offer users a supporting PC (Personal Computer) application to attain pertinent features, which has a multithreading GUI (Graphical User Interface). In order to verify this design, we deploy a prototype on a Xilinx Zynq ™ -7000 AP (All Programmable) SoC (system on Chips) Z-7010 on a ZYBO Board. We apply an image processing SW/HW co-design project to our prototype. The experiment result demonstrates the system's portability and efficacy when dealing with remote access, and flexibility when simulating SW/HW co-design projects through PR (Partial Reconfiguration) technique within reasonable latency. The latency for the end-to-end reconfiguration of a 306.60KB partial bitfile is 8.819ms.

关键词： Field programmable gate arrays Servers Linux Hardware Wireless fidelity Software

来源：评论

学校读者我要写书评

暂无评论

Analytical models for channel potential and drain current in AlGaN/GaN HEMT devices

Analytical models for channel potential and drain current in...

引用

International Conference on asic

作者： Haisheng Qian Guangxi Hu Laigui Hu Xing Zhou Ran Liu Lirong Zheng State Key laboratory of ASIC and system Fudan University Shanghai China The School of Electrical and Electronic Engineering Nanyang Technological University Singapore

Analytical models for channel potential and drain current in AlGaN/GaN HEMT devices are obtained. The analytical model results are verified against simulations, good agreements are observed. The explicit expression fo... 详细信息

关键词： Logic gates Aluminum gallium nitride Wide band gap semiconductors Analytical models Electric potential Integrated circuit modeling HEMTs

来源：评论

学校读者我要写书评

暂无评论

建议与咨询留下您的常用邮箱和电话号码，以便我们向您反馈解决方案和替代方法

时间限定

文献类型

馆藏选择

核心期刊

语言

文献类型

帮助

文字说明：

检索规则说明：

检索范例：

分类表

所选分类

限定检索结果

文献类型

馆藏范围

日期分布

学科分类号

主题

机构

作者

语言

请选择保存的检索档案：

请选择收藏分类：

通借通还

建议与咨询 留下您的常用邮箱和电话号码，以便我们向您反馈解决方案和替代方法

时间限定

文献类型

馆藏选择

核心期刊

语言

文献类型

帮助

文字说明：

检索规则说明：

检索范例：

分类表

所选分类

限定检索结果

文献类型

馆藏范围

日期分布

学科分类号

主题

机构

作者

语言

请选择保存的检索档案： 新增检索档案 确定 取消

请选择收藏分类： 新增自定义分类 确定 取消

通借通还

建议与咨询留下您的常用邮箱和电话号码，以便我们向您反馈解决方案和替代方法

请选择保存的检索档案：

请选择收藏分类：