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IEEE Nuclear Science Symposium

作者： Bo Lu Yong Chen Ting Yi Zhiliang Hong Yumei Zhou Key Laboratory of Particle Astrophysics Institute of High Energy Physics Chinese Academy of Sciences State Key Laboratory of ASIC and System Fudan University Institute of Microelectronics Chinese Academy of Sciences University of Chinese Academy of Sciences

ISBN: (纸本)9781538622834

We present in this work the development of a single-channel correlated double sampling (CDS) asic, named ULN1C, targeting the readout of X-ray CCDs for applications in the fields of both X-ray spectroscopy and imaging. The asic adopts two time-interleaved pre-modulated 3-order 1-bit incremental ΣΔ modulators (SDMs) and two 5-order 228-point truncated cascade of integrated comb (TCIC) filters. It features both optimized sampling strategy for the SDM and decimation scheme for the TCIC filter in order to achieve ultra-low noise, high-linear as well as low-power performances. ULN1C asic is fabricated with GlobalFoundries 0.35μm 2P4M CMOS process and occupies a chip area of 2992μm × 2018μm. When tested standalone, the asic achieves a maximum 55ppm integral nonlinearity (INL) and 10.9μV equivalent input-referred noise (EIN) under 100kHz pixel rate (PR) within the maximum effective input dynamic range (DR) of 60mV_(pp) and only consumes 18.4mW from a single 3.3V supply voltage;When tested with the target X-ray CCD-CCD236 using a 1μCi ~(55)Fe radioisotope, by cooling down the CCD to in the vicinity of 160K, the asic achieves an energy resolution (FWHM) as 132.4eV±2.4@5.9keV under 100kHz PR which is very close to the 121eV@5.9keV Fano Limit. The total readout noise of the system is only 5.2e~-.

关键词： application specific integrated circuits asic readout Readout noise Charge coupled devices single-channel X-ray spectroscopy space division multiplexing

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Heterogeneous computing for CNN

Heterogeneous computing for CNN

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International Conference on asic

作者： Huizi Zhang Chang Wu Xiao Hu School of Microelectronics Fudan University Shanghai China State Key Laboratory of ASIC and Systems Intel Asia-Pacific Research&Development Shanghai China

As a typical machine learning algorithm, convolutional neural network (CNN) has drawn great interests in academic research and industrial applications. However, traditional CPU can no longer meet the computation requirement of CNN due to CPU's sequential computing nature. Heterogeneous computing combines CPU together with GPGPU or FPGAs to form a much more powerful computation platform. In this paper, we present our study on an implementation of CNN on heterogeneous computing systems, and it shows more than 3x runtime speedup. Our study shows systematically combine the high speed of CPU and parallel computing of FPGA, one can achieve better computation speed than CPU or FPGA alone. We also propose a systematic analysis method to partition an algorithm into software implementation (on CPU) and hardware implementation (on FPGA) and derive near optimal solution for heterogeneous computing.

关键词： Field programmable gate arrays Runtime Hardware Partitioning algorithms Acceleration Software Software algorithms

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Roles of the gate length and width of the transistors in increasing the single event upset resistance of SRAM cells

Roles of the gate length and width of the transistors in inc...

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International Conference on asic

作者： Zhongshan Zheng Zhentao Li Gengsheng Chen Jiajun Luo Zhengsheng Han Institute of Microelectronics Chinese Academy of Sciences Beijing China State Key Laboratory of ASIC and System Fudan University Shanghai China Key Laboratory of Silicon Device Technology Chinese Academy of Sciences Beijing China Institute of Microelectronics Chinese Academy of Sciences Beijing CN

The impacts of the gate length and width of the transistors on the single event upset (SEU) hardness of static random access memory (SRAM) cells has been investigated by SPICE simulations, biased on a partially depleted (PD) silicon-on-insulator (SOI) CMOS technology. The results show that increasing the gate width can dramatically enhance the linear energy transfer (LET) threshold of SEU, as compared with increasing the gate length. A new parameter, unit gate area LET threshold, is introduced for characterizing the change in efficiency of improving the SEU resistance with increasing the gate length and width of the transistors in a cell. The effect of decoupling capacitors on cell SEU LET threshold is also presented by making a comparison with that of the transistors with increased gate lengths.

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Fabrication and optimization of a high speed deep-trench super-junction MOSFET with improved EMI performance 13

Fabrication and optimization of a high speed deep-trench sup...

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2016 13th IEEE International Conference on Solid-state and Integrated Circuit Technology (ICSICT)

作者： Fei Wang Min-Zhi Lin Yuan-Lin Yuan Lei Liu Yuhua Cheng Peng-Fei Wang School of Electrical Engineering and Computer Science Peking University State Key Laboratory of ASIC and System Fudan University

ISBN: (纸本)9781467397209

Super-junction（SJ） devices have the advantages of low Drain-Source on-state Resistance(R) and high switching *** it is a Si-based device,it breaks through the classical law of Si power *** kind of non-classical MOSFET structure even realizes high performance comparable to Ⅲ-Ⅴ ***,Electromagnetic Interference（EMI）problem becomes an issue when the SJ devices switch too fast,especially for the deep-trench *** this work,we studied the reason of inferior EMI performance of deep-trench *** is found that there is an abrupt change in gate-drain capacitance(C)when the p/n pillars close to full *** on this observation,an optimized deep-trench SJ-MOSFET is designed and fabricated in order to improve its abrupt change in *** abrupt change in gate-drain capacitance with the increasing drain voltage is smoothed in the capacitance *** a result,a larger EMI margin is obtained in the application circuit using the proposed deep-trench SJ-MOSFET devices.

关键词： MOSFET Fabrication and optimization of a high speed deep-trench super-junction MOSFET with improved EMI performance EMI

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A High Speed SoftMax VLSI Architecture Based on Basic-Split

A High Speed SoftMax VLSI Architecture Based on Basic-Split

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IEEE International Conference on Solid-state and Integrated Circuit Technology

作者： Qiwei Sun Zhixiong Di Zhengyang Lv Fengli Song Qianyin Xiang Quanyuan Feng Yibo Fan Xulin Yu Wenqiang Wang School of Information Science and Technology Southwest Jiaotong University Sichuan China Institute of Microelectronics Southwest Jiaotong University Sichuan China State Key Lab of ASIC & System Fudan University Shanghai China Alibaba Group Hangzhou Zhejiang China

Due to simple to calculate and derivate, SoftMax is widely used in neural network computing as an activation function. But how to guarantee the accuracy and speed while minimizing the consumption of hardware resources is the most critical issue in the current SoftMax hardware design. The available Polynomial Fitting and CORDIC are contradictory in resource occupancy and accuracy. To meet the need of SoftMax, this paper proposes a new method named Basic-Split Calculation. Taking advantage of the math feature of exponential function, the Basic-Split Calculation method splits the exponentiation calculation of the SoftMax into several specific basics which is implemented by look-up table. Based on this strategy, the complex exponential calculation process is implemented by look-up table procedure and multiply operation. It simplify the hardware complexity and logic propagation delay remarkably. Experiment results show that the actual error rate is 10~(-8) magnitude. And, synthesis report based on SMIC65nm technology library show that, the operation frequency can be up to 1GHz. Compared with the existing design. Basis-Split Calculation method has a lot of advantages, such as faster calculation speed, higher accuracy, larger throughput.

关键词： CORDIC contradictory VLSI

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Electrical Impedance and Radiation Modes Determination for LiNbO3 MEMS Ultrasonic Array Transducer using KLM and FEM Modelling 13

Electrical Impedance and Radiation Modes Determination for L...

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2016 13th IEEE International Conference on Solid-state and Integrated Circuit Technology (ICSICT)

作者： Wei-Zhen Wang Wei-Jiang Xu Jia Zhou Wen-Juan Liu Zheng Xu Jun-Yan Ren State Key Lab of ASIC and System School of Microelectronics Fudan University IEMN-DOAE UMR CNRS 8520 Université de Valenciennes Institute of Acoustics Tongji University

ISBN: (纸本)9781467397209

In MEMS realization of high frequency ultrasonic array transducer, electrical impedance matching may become difficult for the reason of the miniaturization of the piezo-array elements. In this study, the electrical impedance of the array elements is estimated first by using KLM model, and then calculated by using finite elements method(FEM), in the case of a Li Nb O3 based30 MHz array transducer. The impedance frequency behavior is related both to the eigen-resonance modes and the electrode driven modes with the free mechanical boundary condition of the element and to the coupling of these modes to the array structure when the element being integrated as the transducer. The array transducer properties and performances such as lateral modes,crosstalk, sensibility and bandwidth, field radiation,focusing/steering are also simulated and analyzed.

关键词： Electrical Impedance and Radiation Modes Determination for LiNbO3 MEMS Ultrasonic Array Transducer using KLM and FEM Modelling FEM

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Electronic, transport and optical properties of monolayer α and β-GeSe: A first-principles study

arXiv

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arXiv 2017年

作者： Xu, Yuanfeng Zhang, Hao Shao, Hezhu Ni, Gang Lu, Hongliang Zhang, Rongjun Peng, Bo Zhu, Yongyuan Zhu, Heyuan Fudan University Shanghai200433 China Ningbo Institute of Materials Technology and Engineering Chinese Academy of Sciences Ningbo315201 China State Key Laboratory of ASIC and System Institute of Advanced Nanodevices School of Microelectronics Fudan University Shanghai200433 China Nanjing University National Laboratory of Solid State Microstructure Nanjing210093 China

The extraordinary properties and the novel applications of black phosphorene induce the research interest on the monolayer group-IV monochalcogenides. Here using the firstprinciples calculations, we systematically investigate the electronic, transport and optical properties of monolayer α- and β-GeSe, the latter of which was recently experimentally realized. We found that, monolayer β-GeSe is a semiconductor with direct band gap of 1.6 eV, and β-GeSe displays indirect semiconductor with the gap of 2.47 eV, respectively. For monolayer β-GeSe, the electronic/hole transport is anisotropic with an extremely high electron mobility of 7.84 x104cm2=V s along the zigzag direction, comparable to that of black phosphorene. Furthermore, for β-GeSe, robust band gaps nearly disregarding the applied tensile strain along the zigzag direction is observed. Both monolayer α- and β-GeSe exhibit anisotropic optical absorption in the visible spectrum. Copyright © 2017, The Authors. All rights reserved.

关键词： Monolayers

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Atomically sharp 1D SbSeI, SbSI and SbSBr with high stability and novel properties for microelectronic, optoelectronic, and thermoelectric applications

arXiv

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arXiv 2017年

作者： Peng, Bo Xu, Ke Zhang, Hao Ning, Zeyu Shao, Hezhu Ni, Gang Lu, Hongliang Zhang, Xiangchao Zhu, Yongyuan Zhu, Heyuan Fudan University Shanghai200433 China Ningbo Institute of Materials Technology and Engineering Chinese Academy of Sciences Ningbo315201 China State Key Laboratory of ASIC and System Institute of Advanced Nanodevices School of Microelectronics Fudan University Shanghai200433 China Nanjing University National Laboratory of Solid State Microstructure Nanjing210093 China

In scaling of transistor dimensions with low source-to-drain currents, 1D semiconductors with certain electronic properties are highly desired. We discover three new 1D materials, SbSeI, SbSI and SbSBr with high stability and novel electronic properties based on first principles calculations. Both dynamical and thermal stability of these 1D materials are examined. The bulk-to-1D transition results in dramatic changes in band gap, effective mass and static dielectric constant due to quantum confinement, making 1D SbSeI a highly promising channel material for transistors with gate length shorter than 1 nm. Under small uniaxial strain, these materials are transformed from indirect into direct band gap semiconductors, paving the way for optoelectronic devices and mechanical sensors. Moreover, the thermoelectric performance of these materials is significantly improved over their bulk counterparts. Finally, we demonstrate the experimental feasibility of synthesizing such atomically sharp V-VI-VII compounds. These highly desirable properties render SbSeI, SbSI and SbSBr promising 1D materials for applications in future microelectronics, optoelectronics, mechanical sensors, and thermoelectrics. Copyright © 2017, The Authors. All rights reserved.

关键词： Calculations

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FinFET doping with PSG/BSG glass mimic doping by ultra low energy ion implantation 16

FinFET doping with PSG/BSG glass mimic doping by ultra low e...

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16th International Workshop on Junction Technology, IWJT 2016

作者： He, Chuan Chen, Lin Zhang, David Wei Hong, Junhua Jin, Guangyao Zhang, Jin Boeker, Jeff Liu, Renjie Jin, Hao Lv, Yimin Chen, Jiong Kingstone Semiconductor Joint Stock Co. Ltd. 200 Niudun Road Shanghai201203 China State Key Laboratory of ASIC and System School of Microelectronics Fudan University Shanghai200433 China

ISBN: (纸本)9781467399654

A FinFET doping method with PSG/BSG glass mimic doping was presented and a simplified process flow was introduced. Numerical simulation and experiment results of sheet resistance and SIMS profiles indicated a uniform doping of the 3D FinFET structure with the presented method, by using a proper dielectric layer and conducting an optimized subsequent annealing process. © 2016 IEEE.

关键词： FinFET

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Electrochemical dopamine biosensor using over-oxidized polypyrrole with assistance of graphene 13

Electrochemical dopamine biosensor using over-oxidized polyp...

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2016 13th IEEE International Conference on Solid-state and Integrated Circuit Technology (ICSICT)

作者： Jian Zhang Jia Zhou Yuhua Yu Jianfeng Chen Weijiang Xu State Key Laboratory of ASIC and Systems of China School of Microelectronics Fudan University Département Opto-Acousto-Electronique I.E.M.N. University de Valenciennes

ISBN: (纸本)9781467397209

This paper described a disposable overoxidized polypyrrole/graphene/gold(OPPy/GE/Au) microelectrode by two-step electrooxidation at a three-electrode-integrated electrochemical sensor, and its application for selective determination of dopamine(DA) without the interference of ascorbic acid(AA). Compared with the bare Au electrode, OPPy/GE/Au electrode exhibits much stronger electroactivity for DA, as well as intense electrostatic inhibition towards the oxidation of AA at the same time. Such a compatible with mass production and low-cost fabrication of on-chip DA sensor presented a sensitivity of 1.1 ?(32)(14)?(44) with a correlation coefficient of 0.99. These properties make the prepared biosensor suitable for the analysis of trace detection of DA in most clinical preparations with a high sensitivity.

关键词： Electrochemical dopamine biosensor using over-oxidized polypyrrole with assistance of graphene

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