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IEEE International Conference on Interconnect Technology

作者： Hai-Sheng Lu Knut Gottfried Nicole Ahner Stefan Schulz Xin-Ping Qu State key Laboratory of ASIC and system Department of microelectronics Fudan University Shanghai China ZfM and Fraunhofer ENAS Technical University of Chemnitz-Zwickau Chemnitz Germany

The influence of CH 4 , H 2 , NH 3 and He plasma on the properties of porous low-k material is studied. It is found that the H 2 , He, NH 3 plasma can cause huge carbon depletion in the porous low-k material, and change the low-k surface from hydrophobic to hydrophilic, which will induce moisture uptake into the low-k material during the CMP process, and results in the increase of the k value and leakage current. The CH 4 plasma can make low-k material more resist against moisture uptake and keep the k value and leakage current of low-k films stable.

关键词： Plasmas Surface treatment Slurries Helium Films Moisture Leakage current

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Direct metal nano-patterning on irregular substrate surfaces by reversal imprint lithography

Direct metal nano-patterning on irregular substrate surfaces...

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IEEE International Nanoelectronics Conference

作者： Lu, Bing-Rui Qu, Xin-Ping Liu, Ran Chen, Yifang Wang, Yuanyuan State Key Lab. of Asic and System Department of Microelectronics Fudan University 220 Handan Road Shanghai 200433 China Micro and Nanotechnology Center Rutherford Appleton Laboratory Chilton Didcot Oxon OX11 0QX United Kingdom Department of Electronic Engineering Fudan University Shanghai 200433 China

ISBN: (纸本)9781457703799

We demonstrate a new direct metal patterning method to form nanoscale patterns on irregularly shaped substrates through a reversal imprint process, called Reversal Imprint Metal Transfer (RIMT). Using commonly processed nano patterns in resist after metal deposition before lift-off procedure, instead of being removed through lift-off, the metal on top of the resist is transferred to another irregular substrate such as a tip, a sidewall, an optic fiber and a glass wedge face by a reversal imprint. This method is able to improve the efficiency of nanolithography by smplying the whole processes, while realize the possibility to create metal patterns on irregular substrates which might be extremely difficult to be achieved by conventional lithography methods. © 2011 IEEE.

关键词： Metals

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Fluorescence enhancement via single-core liquid waveguides in microfluidic channels

Fluorescence enhancement via single-core liquid waveguides i...

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International Conference on Solid state Sensors and Actuators (TRANSDUCERS)

作者： H. Huang X. M. Ji J. Zhou T. J. Huang Y. P. Huang Department of Engineering Science and Mechanics Pennsylvania State University University Park PA USA ASIC and System State Key Laboratory Department of Microelectronics Fudan University Shanghai China

A single-core liquid waveguide is reported to be used in the fluorescence enhancement. The liquid waveguide consists of the high refractive index liquid core and the low refractive index sheath liquid. The diameter of the liquid core can be tuned by sheath flow, and the liquid waveguide can work in different status of the refractive index profiles by the diffusion of the high refractive index solution. Because of the total internal reflection on the liquid interface and the focusing by the gradient refractive indices, the intensity of the fluorescent light collected inside the liquid core is increased. The fluorescence enhancement by the liquid waveguide is characterized by measuring the intensities from the top and the end of the liquid waveguide by the spectrometer. The result shows that the fluorescence enhancement is successfully achieved in the liquid waveguide by controlling the refractive index profiles of the liquids.

关键词： Liquid waveguides Optical waveguides Fluorescence Fluids Refractive index Optical variables control Optical refraction

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Logic-Based Mega-Bit CuxSiyO emRRAM with Excellent Scalability Down to 22nm Node for post-emFLASH SOC Era

Logic-Based Mega-Bit CuxSiyO emRRAM with Excellent Scalabili...

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IEEE International Memory Workshop (IMW)

作者： Yanliang Wang Lingming Yang Ming Wang Wenjin Luo Ryan Huang Qingtian Zou Jingang Wu Beiyuan Hu Yinyin Lin ASIC and System State Key Laboratory Department Microelectronics Fudan University Shanghai China Technology Research & Development Center Semiconductor Manufacturing International Corporation Shanghai China

Excellent scalability of a novel Cu x Si y O emRRAM down to 22 nm node is demonstrated based on statistical data of 1 Mb test chip for the first time. The integration utilizes the standard logic process and the RRAM size is shrunk by spacer pattern technology. The reset current decreases by 5X from 130nm to 22nm node with maintaining robust data retention (10yrs. @150°C), good resistance distribution (with 10X window @125°C), significant read disturbance immunity (after 1010 cycles @0.5V, 50ns pulse), acceptable fast speed (set 100ns; reset 60us), and competitive cost effectiveness (no dedicated tools). This solution is promising in the advanced logic node for SOC applications of post-emFLASH era.

关键词： Arrays Resistance system-on-a-chip Scalability EPROM Copper

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Nanoscale control of domain arrangements in Pb(Zr0.3,Ti 0.7)O3 ferroelectric films

Nanoscale control of domain arrangements in Pb(Zr0.3,Ti 0.7)...

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作者： Shen, Zhen-Kui Lu, Qian Chen, Zhi-Hui Jiang, An-Quan Qiu, Zhi-Jun Qu, Xin-Ping Chen, Yi-Fang Liu, Ran State Key Lab of ASIC and System Fudan University Shanghai 200433 China China Department of Material Science Fudan University Shanghai 200433 China China Rutherford Appleton Laboratory Chilton Didcot Oxfordshire OX11 0QX UK United Kingdom Nanoscience and Nanotechnology Micro and Nanotechnology Centre Rutherford Appleton Laboratory Oxfordshire United Kingdom School of Microelectronics Fudan University 220 Handan Road Shanghai China

Arrays of ferroelectric PZT nanostructures with lateral size down to 500 nm were fabricated using nanoembossing technique. The static distribution of domain configurations was investigated by Piezoresponse Force Microscopy (PFM). The observed presence of patterned domains following the patterned morphology suggests that nanoembossing could be used as a potential method for nanoscale control of domain arrangements in ferroelectrics nanostructures. © 2011 Elsevier B.V. All rights reserved.

关键词： Ferroelectricity

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Band Structures of Metal-Oxide Capped Graphene： A First Principles Study

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Chinese Physics Letters 2010年第7期27卷 225-228页

作者：刘晗孙清清陈琳徐岩丁士进张卫张世理 State Key Laboratory of ASIC and System Department of Microelectronics Fudan University Shanghai 200433

We perform a first-principles calculation based on density functional theory to investigate the interface between single layer graphene and metal oxides. Our study reveals that the monolayer graphene becomes semiconducting by single crystal SiO2 and Al2O3 contact, with energy gaps to - 0.9 and - 1.8 eV, respectively. We find the gap originates from the breakage of π bond integrity, whose extent is related to the interface atom configuration. We believe that our results highlight a promising direction for the feasibility to apply large scale graphene layers as building blocks in future electronics devices.

关键词： MOLECULAR structure ENERGY gaps (Physics) METALLIC oxides GRAPHENE DENSITY functionals MONOMOLECULAR films CONTACT mechanics

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Preparation of Ultra Low- k Porous SiOCH Films from Ring-Type Siloxane with Unsaturated Hydrocarbon Side Chains by Spin-On Deposition

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Chinese Physics Letters 2010年第2期27卷 270-272页

作者：杨春晓张驰孙清清徐赛生张立峰施煜丁士进张卫 State Key Laboratory of ASIC and System Department of Microelectronics Fudan University Shanghai 200433

An ultra-low-dielectric-constant （ultra low-k, or ULK） porous SiOCH film is prepared using a single ring-type siloxane precursor of the 2,4,6,8-tetravinyl-2,4,6,8-tetramethylcyclotetrasiloxane by means of spin-on deposition, followed by crosslinking reactions between the precursor monomers under UV irradiation. The as-prepared film has an ultra low k of 2.41 at 1 MHz due to incorporation of pores and hydrocarbon crosslinkages, a leakage current density of 9.86×10-7 A/cm2 at 1 MV/cm, as well as a breakdown field strength of ~1.5 MV/cm. Further, annealing at 300°C results in lower k （i.e., 1.94 at 1 MHz）, smaller leakage current density （2.96×10-7 A/cm2 at 1 MV/cm） and higher breakdown field strength （about 3.5 MV/cm）, which are likely caused by the short-ranged structural rearrangement and reduction of defects in the film. Finally, the mechanical properties and surface morphology of films are also evaluated after different temperature annealing.

关键词： Surfaces interfaces and thin films Condensed matter: structural mechanical & thermal

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Direct metal nano-patterning on irregular substrate surfaces by reversal imprint lithography

Direct metal nano-patterning on irregular substrate surfaces...

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IEEE International Nanoelectronics Conference (INEC)

作者： Bing-Rui Lu Xin-Ping Qu Ran Liu Yifang Chen Yuanyuan Wang Department of Electronic Engineering Fudan University Shanghai China State key Laboratory of Asic and system Department of Microelectronics Fudan University Shanghai China Rutherford Appleton Laboratory Micro and Nanotechnology Center Oxon UK

关键词： Metals Substrates Resists Optical fibers Lithography Optical device fabrication

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Thermal ALD of Cu via reduction of CuxO films for the advanced metallization in spintronic and ULSI interconnect systems

Thermal ALD of Cu via reduction of CuxO films for the advanc...

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2011 IEEE Semiconductor Conference Dresden: Technology, Design, Packaging, Simulation and Test, SCD 2011

作者： Mueller, Steve Waechtler, Thomas Hofmann, Lutz Tuchscherer, André Mothes, Robert Gordan, Ovidiu Lehmann, Daniel Haidu, Francisc Ogiewa, Marcel Gerlich, Lukas Ding, Shao-Feng Schulz, Stefan E. Gessner, Thomas Lang, Heinrich Zahn, Dietrich R.T. Qu, Xin-Ping Center for Microtechnologies Chemnitz University of Technology D-09107 Chemnitz Germany D-09126 Chemnitz Germany Department of Inorganic Chemistry Chemnitz University of Technology D-09107 Chemnitz Germany Department of Semiconductor Physics Chemnitz University of Technology D-09107 Chemnitz Germany D-01099 Dresden Germany State Key Laboratory of ASIC and System Department of Microelectronics Fudan University Shanghai 200433 China

ISBN: (纸本)9781457704291

In this work, an approach for copper atomic layer deposition (ALD) via reduction of CuxO films was investigated regarding applications in ULSI interconnects, like Cu seed layers directly grown on diffusion barriers (e. g. TaN) or possible liner materials (e. g. Ru or Ni) as well as non-ferromagnetic spacer layers between ferromagnetic films in GMR sensor elements, like Ni or Co. The thermal CuxO ALD process is based on the Cu (I) β-diketonate precursor [(nBu3P) 2Cu(acac)] and a mixture of water vapor and oxygen ("wet O 2") as co-reactant at temperatures between 100 and 130°C. Highly efficient conversions of the CuxO to metallic Cu films are realized by a vapor phase treatment with formic acid (HCOOH), especially on Ru substrates. Electrochemical deposition (ECD) experiments on Cu ALD seed / Ru liner stacks in typical interconnect patterns are showing nearly perfectly filling behavior. For improving the HCOOH reduction on arbitrary substrates, a catalytic amount of Ru was successful introduced into the CuxO films during the ALD with a precursor mixture of the Cu (I) β-diketonate and an organometallic Ru precursor. Furthermore, molecular and atomic hydrogen were studied as promising alternative reducing agents. © 2011 IEEE.

关键词： Electrochemical deposition

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Design of an analog front-end for ambulatory biopotential measurement systems

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Journal of Semiconductors 2010年第10期31卷 92-98页

作者：王佳桢许俊郑立荣任俊彦 State Key Laboratory of ASIC & System Fudan University School of Information and Communication Technology

A continuously tunable gain and bandwidth analog front-end for ambulatory biopotential measurement systems is presented. The front-end circuit is capable of amplifying and conditioning different biosignals. To optimize the power consumption and simplify the system architecture, the front-end only adopts two-stage amplifiers. In addition, careful design eliminates the need for chopping circuits. The input-referred noise of the system is only 1.19 μVrms （0.48-2000 Hz）. The chip is fabricated via a SMIC 0.18μm CMOS process. Although the power consumption is only 32.1 μW under a 3 V voltage supply, test results show that the chip can successfully extract biopotential signals.

关键词： analog front-end biopotential measurement system low-power low-noise

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