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检索条件"机构=School of Microelectronics and State Key Laboratory of ASIC and System"

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Investigation of fabricating a LiNbO3 ultrasonic phased array transducer of more than 100 MHz

Investigation of fabricating a LiNbO3 ultrasonic phased arra...

引用

IEEE SENSORS

作者： J. Y. Zhang W. J. Xu J. Carlier X. M. Ji B. Nongaillard S. Queste Y. P. Huang ASIC and System State Key Laboratory Department of Microelectronics Fudan University Shanghai China Département Opto-Acousto-Electronique I.E.M.N. UMR CNRS 8520 Université de Valenciennes Valenciennes France Institut FEMTO-ST CNRS UMR 6174 Universita de Franche-Comté Besancon France

ISBN: (纸本)9781424492909

36°/Y-cut lithium niobate (LiNbO 3 ) single crystals have been patterned by means of Inductively Coupled Plasma (ICP) deep etching to create ultrasonic arrays resonating in the frequency range of 100-200 MHz. The limitation of etching aspect ratio and the minimum pitch are explored under the optimized ICP parameters. The experimental results demonstrate that the minimum pitch could be obtained at about 25 μm, equivalent to a pitch of 1.6 λ, with a kerf depth of 16 μm. Focusing Ion Beam (FIB) technique is also studied to etch LiNbO 3 crystals. The aspect ratio is up to as high as 6. A pitch of 0.5 λ can be obtained for a 100 MHz half-kerfed LiNbO 3 array.

关键词： Arrays Lithium niobate Etching Acoustics Iterative closest point algorithm Transducers Nickel

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Thermal ALD of Cu via reduction of CuxO films for the advanced metallization in spintronic and ULSI interconnect systems

Thermal ALD of Cu via reduction of CuxO films for the advanc...

引用

Semiconductor Conference Dresden

作者： Steve Mueller Thomas Waechtler Lutz Hofmann André Tuchscherer Robert Mothes Ovidiu Gordan Daniel Lehmann Francisc Haidu Marcel Ogiewa Lukas Gerlich Shao-Feng Ding Stefan E. Schulz Thomas Gessner Heinrich Lang Dietrich R.T. Zahn Xin-Ping Qu Center for Microtechnologies Chemnitz University of Technology Chemnitz Germany Department of Inorganic Chemistry Chemnitz University of Technology Chemnitz Germany Department of Semiconductor Physics Chemnitz University of Technology Chemnitz Germany Fraunhofer Center Nanoelectronic Technologies Dresden Germany State Key Laboratory of ASIC and System Department of Microelectronics Fudan University Shanghai China

In this work, an approach for copper atomic layer deposition (ALD) via reduction of Cu x O films was investigated regarding applications in ULSI interconnects, like Cu seed layers directly grown on diffusion barriers (e. g. TaN) or possible liner materials (e. g. Ru or Ni) as well as non-ferromagnetic spacer layers between ferromagnetic films in GMR sensor elements, like Ni or Co. The thermal Cu x O ALD process is based on the Cu (I) β-diketonate precursor [( n Bu 3 P) 2 Cu(acac)] and a mixture of water vapor and oxygen (“wet O 2 ”) as co-reactant at temperatures between 100 and 130°C. Highly efficient conversions of the Cu x O to metallic Cu films are realized by a vapor phase treatment with formic acid (HCOOH), especially on Ru substrates. Electrochemical deposition (ECD) experiments on Cu ALD seed/Ru liner stacks in typical interconnect patterns are showing nearly perfectly filling behavior. For improving the HCOOH reduction on arbitrary substrates, a catalytic amount of Ru was successful introduced into the Cu x O films during the ALD with a precursor mixture of the Cu (I) β-diketonate and an organometallic Ru precursor. Furthermore, molecular and atomic hydrogen were studied as promising alternative reducing agents.

关键词： Copper Films Nickel Substrates Ultra large scale integration Atomic layer deposition Sputtering

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Ferroelectric phase stabilization within antiferroelectric/dielectric stacking layers

Ferroelectric phase stabilization within antiferroelectric/d...

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12th International Meeting on Ferroelectricity, IMF-12 and the 18th IEEE International Symposium on Applications of Ferroelectrics, ISAF-18

作者： Weng, X.D. Jiang, A.Q. ASIC and System State Key Laboratory Department of Microelectronics Fudan University Shanghai 200433 China

The antiferroelectrics is antiparallel orientations of neighboring dipoles accompanying an antiferroelectric-ferroelectric (AFE-FE) transition under a high field. However, the ferroelectric domains are unstable and easily return to the antiferroelectric, once the external field is removed. From our works, the high-field ferroelectric phase is maintained at zero field within antiferroelectric PbZr0.96Ti0.04O3/Al 2O3 stacking layers, where Al2O3 layer is conductive under the high field to permit AFE-to-FE transition but insulating immediately at zero field to block FE-to-AFE transition. This investigation implies the possibility of antiferroelectric materials for the future application of nonvolatile ferroelectric random access memories. © Taylor & Francis Group, LLC.

关键词： Ferroelectricity

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Characterization of silicon electro-optical modulators for microwave photonic links

Characterization of silicon electro-optical modulators for m...

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International Topical Meeting on Microwave Photonics (MWP)

作者： Xianshu Luo Xiaoguang Tu Junfeng Song Tsung-Yang Liow Qing Fang Peng Huei Lim Yongzhong Xiong Mingbin Yu G. Q. Lo Institute of Microelectronics ASTAR (Agency for Science Technology & Research) Singapore State Key Laboratory on Integrated opto-electronics College of Electronic Science and Engineering Jilin University Changchun China Optoelectronic System Laboratory Institute of Semiconductors Chinese Academy of Sciences (CAS) Beijing China Division of Microelectronics School of Electrical and Electronic Engineering Nanyang Technological University Singapore

In this submission, we present the characterization of a silicon electro-optical modulator using Mach-Zehnder interferometer structure. We characterize the transmission spectra upon various DC and RF voltage supplies with different input optical power. We show the slope efficiency dependence on the optical input power. We also measured the spur-free dynamic range of the modulator using two-tone method, showing an optical power dependent SFDR with maximum value of ~ 7.5 dBc.

关键词： Erbium-doped fiber amplifier Radio frequency Optical modulation Silicon High speed optical techniques Optical fiber communication

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Charge injection controlled capacitance degradation in ferroelectric thin films

Charge injection controlled capacitance degradation in ferro...

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12th International Meeting on Ferroelectricity, IMF-12 and the 18th IEEE International Symposium on Applications of Ferroelectrics, ISAF-18

作者： Jiang, A.Q. Tang, T.A. State Key Laboratory of ASIC and System Department of Microelectronics Fudan University Shanghai 200433 China

The dielectric capacitance of ferroelectric thin films decreases continuously with time above 1 s under the voltage, which is generally explained in terms of defect-related physics. For the better understanding of underlying physics, we delved into the capacitance degradation with time short into a nanosecond order at 77.6 K. The typical feature of the degradation is steplike at around 70 μs. Consequently, we measured the imprint profile in the similar time scale, where the coercive voltage shows a steplike jump at the same time. This suggests the common physics of charge injection responsible for the above two processes.

关键词： Capacitance

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Peripheral domain switching and fatigue-resistive readout of ferroelectric random access memories

Peripheral domain switching and fatigue-resistive readout of...

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2010 10th IEEE International Conference on Solid-state and Integrated Circuit Technology

作者： Jiang, An-Quan Tang, Ting-Ao State Key Laboratory of ASIC and System Department of Microelectronics Fudan University Shanghai 200433 China

ISBN: (纸本)9781424457984

For the integration of high-density ferroelectric random access memories, each memory cell can be formed at the cross point of a plate line and a common node electrode, where the ferroelectric film is continuous between them. However, the peripheral region beyond the cross point of each cell without electrode coverage could also switch under the writing/reading pulse. To avoid this crosstalk problem between adjacent memory cells, the safest distance between the cells is estimated to be 0.27-0.34 Hm for Pb(Zr,Ti)O3 thin-film capacitors from short pulse measurements. With the shortening of the repetitive reading/wiring pulse width down to domain switching time, the capacitor with Pt electrodes is rather fatigue resistive. ©2010 IEEE.

关键词： Electrodes

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Narrow-band midinfrared thermal emitter based on photonic crystal for NDIR gas sensor

Narrow-band midinfrared thermal emitter based on photonic cr...

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2010 10th IEEE International Conference on Solid-state and Integrated Circuit Technology

作者： Ji, Xinming Zhao, Xin Jing, Peng Xing, Fang Huang, Yiping State Key Laboratory of ASIC and System Department of Microelectronics Fudan University Shanghai 200433 China

ISBN: (纸本)9781424457984

A high performance plasmonic thermal emitter with narrow bandwidth emission property were proposed and fabricated. This emitter is based on a metal coated two-dimensional (2D) photonic crystal of air holes in a silicon substrate. The PC structure is found to be highly effective in suppressing the thermal emission, which can yield 2 orders of magnitude more efficient that conventional IR sources. Thermally isolated, uniformly heated emitters, with photonic crystal structure modified surfaces are exploited for narrow-band spectral tuning in the infrared wavelength regime. The results show that narrow band spectral tuning is accomplished through control of the lattice constant of the PC patterns. ©2010 IEEE.

关键词： Photonic crystals

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Preparation and characterization of low-dielectric-constant F-doped SiOCN films by PECVD

Preparation and characterization of low-dielectric-constant ...

引用

2010 10th IEEE International Conference on Solid-state and Integrated Circuit Technology

作者： Qian, Ke-Jia Sun, Qing-Qing Ding, Shi-Jin Zhang, Wei State Key Laboratory of ASIC and System Department of Microelectronics Fudan University Shanghai 200433 China

ISBN: (纸本)9781424457984

F-doped SiOCN films with low dielectric constant have been prepared using SiH4, C2F6 and N2O as reactants by PECVD, and characterized by X-ray photoelectron spectroscopy (XPS), capacitance -voltage (C-V) and current-voltage (I-V) measurements, and nano-indenter. With an increment of the flow rate of C2F6, the concentrations of fluorine and carbon incorporated in the films increase, and the concentration of nitrogen decreases. This leads to a decrease in the dielectric constant of the film. When the flow rate of C2F6 is 750 sccm, the percentages of C and F elements amount to 5.2% and 9.9%, respectively. Meanwhile, the resulting dielectric constant is reduced to 2.6, and the leakage current density is lower than 3×10-8 A/cm2 at 1MV/cm. The hardness and Young's modulus of the films are higher than 3 GPa and 84 GPa, respectively. It is thus believed that the introduction of carbon and fluorine can lower the dielectric constant of the films, and the presence of N can improve the mechanical properties of film. ©2010 IEEE.

关键词： X ray photoelectron spectroscopy

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An improved design of Si PNIN tunneling field effect transistor

An improved design of Si PNIN tunneling field effect transis...

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2010 10th IEEE International Conference on Solid-state and Integrated Circuit Technology

作者： Cao, W. Yao, C.J. Huang, D.M. Li, M.-F. State Key Laboratory of ASIC and System Department of Microelectronics Fudan University Shanghai 200433 China

ISBN: (纸本)9781424457984

PIN tunneling field effect transistor (TFET) is one of the most promising devices due to its low sub-threshold swing. In this paper, using TCAD simulation, we investigate the doping and structure dependence of the electric field in PIN TFET. We show that an insertion of a thin N layer into PIN structure (i.e., PNIN TFET) not only enhances the drive current but also improves the reliability of the device. We also show that the device characteristics can be further improved by properly aligning the gate electrodes with respect to the tunneling junction. ©2010 IEEE.

关键词： Electric fields

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Study of ferroelectic properties in ferroelectric/high-k dielectric bilayers

Study of ferroelectic properties in ferroelectric/high-k die...

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12th International Meeting on Ferroelectricity, IMF-12 and the 18th IEEE International Symposium on Applications of Ferroelectrics, ISAF-18

作者： Ma, Z. Jiang, A.Q. State Key Laboratory of ASIC and System Department of Microelectronics Fudan University Shanghai 200433 China

The Ferroelectricity maintained in ultrathin films could suffer from bad polarization retention due to epitaxial stresses and interfacial effects. It makes a great difference to incorporate ultrathin PZT films with a few nanometer-thick Al2O3. The ferroelectric properties, such as fatigue and retention, show obviously changes in our experiment. The ultra thin Al2O3 layer which acts as a tunnel switch in the progress of domain switching affects ferroelectric properties in many ways. © Taylor & Francis Group, LLC.

关键词： Ferroelectricity

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