Nickel silicide formation on Si(110) substrate is investigated in this paper. Comparing with the samples fabricated on Si(100) substrate, it is revealed that a higher annealing temperature is required for NiSi formati...
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The effect of Pb excess on the crystallization and ferroelectric property in Pb(Zr0.3Ti0.7)O3 (PZT) thin films has been investigated. The Pb loss due to atomic interdiffusion and volatilization during thermal annealin...
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We propose a new structure of Schottky rectifier, named trapezoid mesa trench MOS barrier Schottky rectifier (TM-TMBS). By 2D numerical simulations, both forward and especially better reverse I-V characteristics, incl...
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Novel optical offset quadrature phase shift keying （OQPSK） and improved minimum-shift keying （MSK） modulation schemes to smooth optical phase hopping for high speed fiber optics transmission are proposed. Simulati...
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Novel optical offset quadrature phase shift keying （OQPSK） and improved minimum-shift keying （MSK） modulation schemes to smooth optical phase hopping for high speed fiber optics transmission are proposed. Simulations have been done among the MSK, OQPSK, quadrature phase shift keying （QPSK）, and binary phase-shift keying （BPSK） modulation formats at 40 Gb/s over 100-km transmission link using coherent detection. Simulation results present good performances to elevate chromatic dispersion tolerance and reduce the influence of nonlinear effects by adopting the smooth phase modulation formats. Inter-symbol interference decreases for the fast side-lobe property and tight spectrum as a result of avoding the π phase shift and reducing envelop fluctuation.
The threshold voltage, Vth of a double-gate Schottky-Barrier (DGSB) source/drain (S/D) metal-oxide-semiconductor field-effect transistor (MOSFET) has been investigated. An analytic expression for surface potential in ...
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The metal-oxide-semiconductor field-effect transistor (MOSFET) with a surrounding-gate (SG) is investigated. Poisson's Equation (PE) is solved analytically. The analytic expressions for electrical potential and th...
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The effect of Pb excess on the crystallization and ferroelectric properties in Pb(Zr0.3Ti0.7)O3 (PZT) thin films has been investigated. Owning to atomic interdiffusion and volatilization during heat treatment, the Pb ...
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The effect of Pb excess on the crystallization and ferroelectric properties in Pb(Zr0.3Ti0.7)O3 (PZT) thin films has been investigated. Owning to atomic interdiffusion and volatilization during heat treatment, the Pb loss has an impact on PZT stoichiometric composition, perovskite structure, and ferroelectric properties. The electrical characterization shows that the polarization-voltage (P-V) hysteresis loop is closely correlated with the appropriate Pb content and frequency. With the aid of the Ishibashi's power law model, we extract the frequency coefficient of the model dependence of the Pb excess.
As the channel length of metal-oxide-semiconductor field-effect transistors （MOSFETs） scales into the nanometer regime, quantum mechanical effects are becoming more and more significant. In this work, a model for th...
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As the channel length of metal-oxide-semiconductor field-effect transistors （MOSFETs） scales into the nanometer regime, quantum mechanical effects are becoming more and more significant. In this work, a model for the surrounding-gate （SG） nMOSFET is developed. The SchrSdinger equation is solved analytically. Some of the solutions are verified via results obtained from simulations. It is found that the percentage of the electrons with lighter conductivity mass increases as the silicon body radius decreases, or as the gate voltage reduces, or as the temperature decreases. The eentroid of inversion-layer is driven away from the silicon-oxide interface towards the silicon body, therefore the carriers will suffer less scattering from the interface and the electrons effective mobility of the SG nMOSFETs will be enhanced.
Hot carrier (HC) stress induced negative differential resistance (NDR) behavior in the reserve mode output characteristics of n-type poly-Si TFTs is first observed. The NDR phenomenon, i.e., ION decreases with increas...
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Nb2O5-Al2O3 nanolaminate films have been grown by atomic layer deposition using (Nb(OC2H5)5)/H2O, and Al(CH3)3/H2O precursors, respectively. Effect of rapid thermal annealing (RTA) on the optical properties of the nan...
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ISBN:
(纸本)9781424457977
Nb2O5-Al2O3 nanolaminate films have been grown by atomic layer deposition using (Nb(OC2H5)5)/H2O, and Al(CH3)3/H2O precursors, respectively. Effect of rapid thermal annealing (RTA) on the optical properties of the nanolaminate has been studied using Fourier transform infrared spectroscopy (FTIR), and spectroscopic ellipsometry. From the FTIR result, Al2O3 suppresses the formation of interfacial layer during RTA. The refractive index of the ND2O5-Al2O3 films is found to increase after the RTA at 500 ℃, while decrease with the RTA temperature above 500 ℃. Moreover, the optical band gap of Nb2O5 film deduced from the extinction coefficient shows a gradual increase with increasing annealing temperature, which is related to a decrease in the film disorder.
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