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检索条件"机构=School of Microelectronics and State Key Laboratory of ASIC and System"

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Charging characteristics of Sb nanocrystals embedded in copper phthalocyanine films for memory applications

Charging characteristics of Sb nanocrystals embedded in copp...

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2010 10th IEEE International Conference on Solid-state and Integrated Circuit Technology

作者： Huang, Yue Ding, Shi-Jin Zahn, Dietrich R. T. State Key Laboratory of ASIC and System Department of Microelectronics Fudan University Shanghai 200433 China Semiconductor Physics Chemnitz University of Technology Chemnitz 097107 Germany

ISBN: (纸本)9781424457984

The charging characteristics of Sb nanocrystals embedded in organic semiconductor copper phthalocyanine (CuPc) have been studied for the first time. The images from atomic force microscopy show that Sb NCs grown on the surface of CuPc film exhibit a vertical height of 10-15 nm and uniform distribution, which are interspersed with a few bigger ones (∼30 nm). Two kinds of capacitance-voltage measurements, frequency responds and hysteresis loops, of the control sample and the one embedded with Sb NCs indicate the charging and discharging of the Sb NCs. ©2010 IEEE.

关键词： Nanocrystals

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Tunable photonic crystals based on photoinduced deformations of crosslinked liquid-crystalline polymers

Tunable photonic crystals based on photoinduced deformations...

引用

2010 10th IEEE International Conference on Solid-state and Integrated Circuit Technology

作者： Zhao, Xin Ji, Xinming Wei, Wu Yu, Yanlei Cheng, Futao Bao, ZongMing Huang, Yiping State Key Laboratory of ASIC and System Department of Microelectronics Fudan University Shanghai 200433 China Department of Materials Science Fudan University Shanghai 200433 China

ISBN: (纸本)9781424457984

A novel tunable three-dimensional (3D) photonic crystals is demonstrated based on the photoinduced deformation of the azobenzene crosslinked liquid-crystalline polymers(CLCPs). A nanoimprinting approach is utilized to create a robust CLCPs 3D photonic crystal structure. The dynamical modulated performance of the photonic crystals induced by ultraviolet and visible are measured and analyzed. It is shown that the tunable photonic crystals is reversible and stable. ©2010 IEEE.

关键词： Photonic crystals

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Characterization of ultra-low k porous organosilica thin films

Characterization of ultra-low k porous organosilica thin fil...

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2010 10th IEEE International Conference on Solid-state and Integrated Circuit Technology

作者： Fu, Shuang Qian, Ke-Jia Ding, Shi-Jin Zhang, Wei Fan, Zhong-Yong Department of Material Science Fudan University Shanghai 200433 China State Key Laboratory of ASIC and System Department of Microelectronics Fudan University Shanghai 200433 China

ISBN: (纸本)9781424457984

Porous organosilica thin films using 1,2-bis(triethoxysily)ethane, triethoxymethylsilane and a poly (ethylene oxide)-poly(propylene oxide)-poly(ethylene oxide) triblock copolymer template have been prepared by spin-on technique. The films were characterized by cross-sectional scanning electron microscopy, x-ray diffraction and Fourier-transform infrared spectroscopy. After thermal treatment at 350 °C in N2 for two hours, the films show well ordered porous structure as well as uniform and crack-free surface. The dielectric constant (k) as low as 2.0 was obtained at 100k Hz, and kept good thermal stability up to 500 °C. Meanwhile, the resulting low-k porous films also exhibit low leakage current densities, e.g., 3.0×10-8 A/cm2 at 1 MV/cm, and good mechanical properties with elastic modulus of 4.7 GPa and hardness of 0.56 GPa in the case of 500 °C annealing. ©2010 IEEE.

关键词： Thin films

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Mapping of pipeline flow chart onto mesh-based multi-core NoC architecture

Mapping of pipeline flow chart onto mesh-based multi-core No...

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2010 10th IEEE International Conference on Solid-state and Integrated Circuit Technology

作者： Yang, Haofan Xiao, Ruijin Liu, Liang Jing, Ming-E Yu, Zhiyi Zeng, Xiaoyang Zhou, Dian State Key Laboratory of ASIC and System Fudan University Shanghai 200433 China School of Computer Science Fudan University China

ISBN: (纸本)9781424457984

Among current outstanding research problems in NoC Design, mapping application onto NoC is one of the core issues to be explored. In this paper, we propose two methods for mapping a pip elined flow chart onto mesh-based NoC system: Communication Length Concerned (CLC) method and Space Restricted (SR) method after a simple pre-process. The former significantly reduces the latency and energy consumption in inter-core communication while latter method provides a trade-off for run-time mapping based on the former one. Results show that, compared with normal mapping, the CLC method reduces about 43.3% and 28.6% in communication latency and energy consumption, respectively;while the SR method reduces about 37.6% communication latency and 24% energy consumption. The two methods discussed in this paper could be used as guidance for mapping pipeline flow charts on homogenous mesh-based NoC architectures. ©2010 IEEE.

关键词： Mapping

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Preparation and characterization of low-dielectric-constant F-doped SiOCN films by PECVD

Preparation and characterization of low-dielectric-constant ...

引用

2010 10th IEEE International Conference on Solid-state and Integrated Circuit Technology(第十届固态和集成电路技术国际会议 ICSICT-2010)

作者： Ke-Jia Qian Wei Zhang Shi-Jin Ding Qing-Qing Sun State Key Laboratory of ASIC and System Department of Microelectronics Fudan University Shanghai State Key Laboratory of ASIC and System Department of Microelectronics Fudan University Shanghai

F-doped SiOCN films with low dielectric constant have been prepared using SiH_4, C2F6 and N2O as reactants by PECVD, and characterized by X-ray photoelectron spectroscopy (XPS), capacitance -voltage (C-V) and current-voltage (I-V) measurements, and nanoindenter. With an increment of the flow rate of C2F6, the concentrations of fluorine and carbon incorporated in the films increase, and the concentration of nitrogen decreases. This leads to a decrease in the dielectric constant of the film. When the flow rate of C2F6 is 750 sccm, the percentages of C and F elements amount to 5.2％ and 9.9％, respectively. Meanwhile, the resulting dielectric constant is reduced to 2.6, and the leakage current density is lower than 3×10-8 A/cm2 at lMV/cm. The hardness and Young's modulus of the films are higher than 3 GPa and 84 GPa, respectively. It is thus believed that the introduction of carbon and fluorine can lower the dielectric constant of the films, and the presence of N can improve the mechanical properties of film.

关键词： Films Dielectric constant Leakage current Mechanical factors Thermal stability Dielectric measurements

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Narrow-band Midinfrared Thermal Emitter Based on Photonic Crystal for NDIR Gas Sensor

Narrow-band Midinfrared Thermal Emitter Based on Photonic Cr...

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2010 10th IEEE International Conference on Solid-state and Integrated Circuit Technology(第十届固态和集成电路技术国际会议 ICSICT-2010)

作者： Yiping Huang Xin Zhao Peng Jing Xinming Ji Fang Xing The State Key Laboratory of ASIC &System Department of Microelectronics Fudan University Shanghai The State Key Laboratory of ASIC &System Department of Microelectronics Fudan University Shanghai

ISBN: (纸本)9781424457977

A high performance plasmonic thermal emitter with narrow bandwidth emission property were proposed and fabricated. This emitter is based on a metal coated two-dimensional (2D) photonic crystal of air holes in a silicon substrate. The PC structure is found to be highly effective in suppressing the thermal emission, which can yield 2 orders of magnitude more efficient that conventional IR sources. Thermally isolated, uniformly heated emitters, with photonic crystal structure modified surfaces are exploited for narrowband spectral tuning in the infrared wavelength regime. The results show that narrow band spectral tuning is accomplished through control of the lattice constant of the PC patterns.

关键词： emitters Lattice constants Narrowband Photonic crystals photonic airhole crystals INFRARED SOURCES crystal structure

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An analytical model for the subthreshold swing of double-gate MOSFETs

An analytical model for the subthreshold swing of double-gat...

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International Workshop on Junction Technology

作者： Zhihao Ding Guangxi Hu Jinglun Gu Ran Liu Lingli Wang Tingao Tang State Key Laboratory of ASIC & System School of Microelectronics Fudan University Shanghai China

ISBN: (纸本)9781424458660;9781424458691

A model for the Symmetric Double-Gate (SDG) n-MOSFET is presented. Poisson equation is solved analytically and channel potential is obtained. The analytical expression for subthreshold swing is achieved. Model results are compared with Medici simulations, good agreement is observed. The subthreshold swing of an SDG MOSFET will be improved by increasing the channel length, by reducing either the silicon body thickness or the gate oxide thickness, and by increasing the silicon body doping concentration.

关键词： Analytical models Silicon Voltage MOSFET circuits Poisson equations Electric potential Doping CMOS technology Permittivity Boundary conditions

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Effect of array periodicity on filtering characteristic for metal/dielectric photonic crystal

Effect of array periodicity on filtering characteristic for ...

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systems Integration 2010 - 4th European Conference and Exhibition on Integration Issues of Miniaturized systems - MEMS, MOEMS, ICs and Electronic Components

作者： Xiao, Gongli Bao, Zongming Huang, Yiping State Key Laboratory of ASIC and System Department of Microelectronics Fudan University Shanghai 200433 China Information and Communications College Guilin University of Electronic Technology Guilin 541004 China

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Immunosensor for detecting pulmonary tuberculosis markers in human serum

Immunosensor for detecting pulmonary tuberculosis markers in...

引用

2010 10th IEEE International Conference on Solid-state and Integrated Circuit Technology

作者： Xu, Chun Chai, Xiao-Sen Zhang, Shu-Lin Zhou, Jia ASIC and System State Key Lab. Department of Microelectronics Fudan University Shanghai 200433 China State Key Laboratory of Genetic Engineering Fudan University No. 220 Handan Road 200433 Shanghai China

ISBN: (纸本)9781424457984

A specific and high-sensitive immunosensor for detecting pulmonary tuberculosis (TB) markers in human serum is presented by miniaturizing array of microelectrodes via micro electro-mechanical system (MEMS) for multi-channel electrochemical measurement. The immunosensor is consisted of six Au disk working electrodes, one Au counter electrode and one Ag/AgCl reference electrode. Semi-insulating poly(o-phenylenediamine)(PoPD) film was utilized to co-polymerize and immobilize antigen at the arrayed Au electrodes. The selective recognition of antibody to the corresponding antigen is quantitatively detected by the peak current in the presence of the redox probe, FcCH 2OH(FcM). Samples with antibody positive and antibody negative can be distinguished. ©2010 IEEE.

关键词： Antibodies

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Effect of temperature on GaAs surface self-cleaning using dimethylaluminumhydride

Effect of temperature on GaAs surface self-cleaning using di...

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第18届国际真空大会

作者： David Wei Zhang State Key Laboratory of ASIC and System Department of MicroelectronicsFudan University

Further scaling of complementary metal-oxide-semiconductor （CMOS） technology in accordance with Moore’s law will require various novel materials such as high-k dielectrics, metal gates, and high-mobility channels. III-V compound semiconductors such as GaAs and InGaAs have attracted renewed attention for high-speed MOS field-effect transistors （MOSFETs） due to their higher carrier mobility compared with that of Si. However, the performance of GaAs-based MOSFETs is often limited by the high density of interfacial trap states （Dit）, which lead to the surface Fermi level pinning at the midgap. It is reported that the Fermi level is pinned by defect levels induced by surface species such as As-O bonds, Ga-O bonds, elemental As, and Ga or As antisites in the GaAs near-surface region. Consequently, there is a great need to develop an efficient GaAs surface passivation technique and a thermally stable dielectric/GaAs interface. For Al2O3 films grown by atomic layer deposition using trimethylaluminum （TMA）, a self-cleaning effect on the reduction of the surface oxides was reported. We also have demonstrated a new self-cleaning process for GaAs surface passivation based on dimethylaluminum （DMAH） and investigated the DMAH pretreatment time to influence the interface quality recently. It is still of interest to characterize the effect of pretreatment temperature on the extent of interface reaction. In this work, the evolution of interface between aluminum oxide and GaAs as a function of the DMAH pretreatment temperature is studied by using x-ray photoelectron spectroscopy （XPS） and atomic force microscopy （AFM）.

关键词： GaAs DMAH Self-cleaning

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