检索结果-内蒙古大学图书馆

Lithography process for KrF in the sub-0.11μm node

Journal of Semiconductors 2009年第9期30卷 146-150页

作者：赵宇航朱骏童家榕曾璇 State Key Laboratory of ASIC & System Department of MicroelectronicsFudan University Shanghai IC Research and Development Center

Currently, 200 mm wafer foundry companies are beginning to explore production feasibility under ground rules smaller than 0.11 μm while maintain the cost advantages of KrF exposure tool systems. The kl factor under 0.11 μm at 248 nm illumination will be below 0.35, which means the process complexity is comparable with 65 nm at 193 nm illumination. In this paper, we present our initial study in the CD process window, mask error factor and CD through pitch performance at the 0.09 μm ground rule for three critical layers--gate poly, metal and contact. The wafer data in the process window and optical proximity will be analyzed. Based on the result, it is shown that the KrF tool is fully capable of sub 0.11 μm node mass production.

关键词： kl factor KrF photo resist lithography

来源：评论

学校读者我要写书评

暂无评论

Atomic Layer Deposition of Al2O3 on H-Passivated GeSi： Initial Surface Reaction Pathways with H/GeSi（100）-2 × 1

引用

Chinese Physics Letters 2009年第5期26卷 64-66页

作者：施煜孙清清董琳刘晗丁士进张卫 State Key Laboratory of ASIC and System Department of Microelectronics Fudan University Shanghai 200433

The reaction mechanisms of Al（CH3 ）3 （TMA） adsorption on H-passivated GeSi（100）-2 × 1 surface are investigated with density functional theory. The Si-Ge and Ge-Ge one-dimer cluster models are employed to represent the GeSi（100）-2 × 1 surface with different Ge compositions. For a Si-Ge dimer of a H-passivated SiGe surface, TMA adsorption on both Si-H^＊ and Ge-H^＊ sites is considered. The activation barrier of TMA with the Si-H^＊ site （1.2eV） is higher than that of TMA with the Ge-H^＊ site （0.91 eV）, which indicates that the reaction proceeds more slowly on the Si-H^＊ site than on the Ge-H^＊ site. In addition, adsorption of TMA is more energetically favorable on the Ge-Ge dimer than on the Si-Ge dimer of H-passivated SiGe.

关键词： No English keyword

来源：评论

学校读者我要写书评

暂无评论

Memory Effect of Metal-Oxide-Silicon Capacitors with Self-Assembly Double-Layer Au Nanocrystals Embedded in Atomic-Layer-Deposited HfO2 Dielectric

引用

Chinese Physics Letters 2009年第10期26卷 200-202页

作者：黄玥苟鸿雁孙清清丁士进张卫张世理 State Key Laboratory of ASIC and System School of Microelectronics Fudan University Shanghai 200433 School of Information and Communication KTH Royal Institute of Technology Electrum 229 SE-164 40 Kista Sweden

We report the chemical self-assembly growth of Au nanocrystals on atomic-layer-deposited HfO2 films aminosilanized by （3-Aminopropyl）-trimethoxysilane aforehand for memory applications. The resulting Au nanocrystals show a density of about 4 × 10^11 cm^-2 and a diameter range of 5-8nm. The metal-oxide-silicon capacitor with double-layer Au nanocrystals embedded in HfO2 dielectric exhibits a large C - V hysteresis window of 11.9 V for ±11 V gate voltage sweeps at 1MHz, a flat-band voltage shift of 1.5 V after the electrical stress under 7 V for 1ms, a leakage current density of 2.9 × 10^-8 A/cm^-2 at 9 V and room temperature. Compared to single-layer Au nanocrystals, the double-layer Au nanocrystals increase the hysteresis window significantly, and the underlying mechanism is thus discussed.

关键词： Electronics and devices Semiconductors Surfaces interfaces and thin films Nanoscale science and low-D systems

来源：评论

学校读者我要写书评

暂无评论

Fast patterning and dry-etch of SiN_x for high resolution nanoimprint templates

引用

Journal of Semiconductors 2009年第6期30卷 138-141页

作者：疏珍万景陆冰睿谢申奇陈宜方屈新萍刘冉 State Key Laboratory of ASIC and System Department of Microelectronics Fudan University Micro and Nanotechnology Centre Rutherford Appleton Laboratory Chilton Didcot Oxon OX11 0QX UK

We developed a simplified nanofabrication process for imprint templates by fast speed electron beam lithography（EBL） and a dry etch technique on a SiNx substrate,intended for large area *** this end,the highly sensitive chemically amplified resist（CAR）,NEB-22,with negative tone was *** EBL process first defines the template pattern in NEB-22,which is then directly used as an etching mask in the subsequent reactive ion etching（RIE） on the SiNx to form the desired *** properties of both e-beam lithography and dry etch of NEB-22 were carefully studied,indicating significant advantages of this process with some drawbacks compared to when Cr was used as an etching ***,our results open up a good opportunity to fabricate high resolution imprint templates with the prospect of wafer scale manufacturing.

关键词： SiNx templates nanoimprint NEB-22 electron bean lithography reactive ion etch

来源：评论

学校读者我要写书评

暂无评论

Electrical levels of defect investigation of Zr O2 thin film by spectroscopic ellipsometry

引用

Journal of Vacuum Science and Technology B: microelectronics and Nanometer Structures 2009年第3期27卷 1030-1034页

作者： Chen, Y.R. Zhou, P. Li, J. Chen, L.Y. Department of Optical Science and Engineering Fudan University Shanghai 200433 China School of Microelectronics ASIC and System State Key Laboratory Fudan University Shanghai 200433 China

The electrical levels of defects of high- k dielectric Zr O2 films deposited with different oxygen fluxes have been investigated using x-ray diffraction, x-ray photoelectron spectroscopy, and spectroscopic ellipsometry. Various defects with the formation of interstitial oxygen and oxygen vacancies existed in monoclinic Zr O2 films. The optical properties of the films are strongly influenced by configuration changes in defects. Parameters were extracted from spectroscopic ellipsometry raw data by Lorentz oscillator model fitting that indicate the probabilities and transition energies for different charged oxygen interstitial and vacancy defects. These correspond to the electron affinity energies calculated by density functional theory and assigned to electrons trapped at different charged defects from the bottom of the conduction band. A nondestructive and noncontact solution is suggested for detecting the defect states and energy level of high- k film. © 2009 American Vacuum Society.

关键词： Spectroscopic ellipsometry

来源：评论

学校读者我要写书评

暂无评论

High spectral quality defect-coupled 1550nm micro-disc lasers

High spectral quality defect-coupled 1550nm micro-disc laser...

引用

IEEE International Semiconductor Laser Conference

作者： Xinlun Cai Gabor Mezosi Zhuoran Wang Yi Shu Marc Sorel Jiangbo Zhu Nan Chi Siyuan Yu Department of Electronic and Electrical Engineering University of Bristol Bristol UK Department of Electronics and Electrical Engineering University of Glasgow Glasgow UK School of Optoelectronic Information University of Electronic Science and Technology Chengdu Sichuan China Department of Communications Science and Engineering State Key Laboratory of ASIC & System Fudan University Shanghai China

We demonstrate electrically-pumped room-temperature continuous-wave lasing in InP-based microdisks lasers with threshold current of 5mA. A defect on the disc circumference is used to extract the light and to achieve h... 详细信息

关键词： Semiconductor lasers Laser modes Measurement by laser beam Threshold current Power generation Pump lasers Electronic mail

来源：评论

学校读者我要写书评

暂无评论

Layer-by-layer assembly of poly(p-xylyleneviologen)-DNA multilayers and their electrochemical properties

引用

Materials Science and Engineering C 2009年第3期29卷 925-929页

作者： Chen, Guo-Ping Wang, Xu Liu, Ai-Rong Qian, Dong-Jin State Key Laboratory ASIC and System School of Microelectronics 220 Handan Road Shanghai 200433 China Department of Chemistry Fudan University 220 Handan Road Shanghai 200433 China

Multilayers of poly(p-xylyleneviologen) (PXV) and calf thymus DNA were constructed on the gold surface by layer-by-layer (LBL) method. The assembly process was examined by quartz crystal microbalance (QCM) measurements. According to the frequency change, the average mass increase was estimated to be about 97 and 110ng/cm2 for each assembly of PXV and DNA layer, respectively. Cyclic voltammograms of the multilayer modified gold electrodes showed a couple of redox peaks, the potentials of which were closely dependent on the layer numbers and nature of the outmost layer. The alternatively assembled DNA layers could hinder formation of π-complex dimer of viologen groups due to the strong interlayer electrostatic interaction. The charge transfer process was discussed by the chronocoulometry method. The assembled PXV-DNA multilayers showed high long-term stability at ambient conditions and in electrolyte solution. © 2008 Elsevier B.V. All rights reserved.

关键词： Multilayers

来源：评论

学校读者我要写书评

暂无评论

Robust Low Voltage Program-Erasable Cobalt-Nanocrystal Memory Capacitors with Multistacked Al2O3/HfO2/Al2O3 Tunnel Barrier

引用

Chinese Physics Letters 2009年第8期26卷 313-316页

作者：廖忠伟苟鸿雁黄玥孙清清丁士进张卫张世理 State Key Laboratory of ASIC and System School of Microelectronics Fudan University Shanghai 200433 School of Information and Communication KTH (Royal Institute of Technology) Electrum 229 SE-164 40 Kista Sweden

A n atomic-layer-deposited Al2O3/HfO2/Al2O3 （A/H/A） tunnel barrier is in vestigated for Co nanocrystal memory capacitors. Compared to a single Al2O3 tunnel barrier, the A/H/A barrier can significantly increase the hysteresis window, i.e., an increase by 9 V for ±12 V sweep range. This is attributed to a marked decrease in the energy barriers of charge injections for the A/H/A tunnel barrier. Further, the Co-nanocrystal memory capacitor with the A/H/A tunnel barrier exhibits a memory window as large as 4.1 V for 100 μs program/erase at a low voltage of ±7 V, which is due to fast charge injection rates, i.e., about 2.4× 10^16 cm^-2 s^-1 for electrons and 1.9× 1016 cm^-2 s^-1 for holes.

关键词： ROBUST control COBALT compounds LOW voltage systems NANOCRYSTALS CAPACITORS OXIDES TUNNELING (Physics) THIN films -- Electric properties

来源：评论

学校读者我要写书评

暂无评论

Quantum-mechanical study on the electron effective mobility of surrounding-gate nMOSFETs

Quantum-mechanical study on the electron effective mobility ...

引用

International Conference on asic

作者： Guang-Xi Hu Ran Liu Ting-Ao Tang Ling-Li Wang Zhi-Jun Qiu State Key Laboratory of ASIC & System School of Microelectronics Fudan University Shanghai China

As metal - oxide - semiconductor field-effect transistors (MOSFETs) down scaling progresses into the nanometer regime, quantum mechanical effects are becoming more and more significant. In this work, a model for the surrounding-gate (SG) nMOSFET is developed. The Schro¿dinger equation is solved analytically and some of the results are verified via simulations. We find that the percentage of the electrons with a lighter conductivity mass increases as the temperature decreases, or as the gate voltage reduces. These imply that low temperature and low gate voltage will enhance the electron effective mobility, which is good for the device performance.

关键词： Electron mobility MOSFETs Quantum mechanics Conductivity Silicon RNA FETs Schrodinger equation Analytical models Temperature

来源：评论

学校读者我要写书评

暂无评论

A flexible architecture for multi-standard LDPC decoders

A flexible architecture for multi-standard LDPC decoders

引用

International Conference on asic

作者： Shuangqu Huang Bo Xiang Bei Huang Yun Chen Xiaoyang Zeng State Key Laboratory of ASIC and System Department of Microelectronics Fudan University Shanghai China Key Laboratory of ASIC and System Department of Microelectronics Fudan University Shanghai China

Since low-density parity-check codes have near-capacity decoding performance and very high decoding throughput, they have been employed as FEC coding scheme in many transmission standards for wireless communication, such as IEEE 802.22n, IEEE 802.16e, DVB-S2, and DTMB. This trend triggers the need for so-called multi-standard LDPC decoders. In this paper, a flexible architecture that supports multiple code rates, variable block sizes and is code independent for block-LDPC codes is proposed, based on rearranged TPMP algorithm,. By implementing a dynamically reconfigurable RPPU, our proposed architecture can be configured into row update or column update mode by time-division multiplexing. Consequently, the decoder achieves a high area and power efficiency. To verify our proposed architecture, a novel LDPC decoder which supports IEEE802.16e standard has been implemented. The results on a 0.18 um CMOS process show that the decoder occupies an area of approximately 13.7 mm 2 and runs correctly at an maximum operating frequency of 110 MHz, resulting in 98 Mbps decoding throughput.

关键词： Parity check codes Decoding Throughput Code standards Application specific integrated circuits Communication standards Wireless communication Digital video broadcasting Forward error correction microelectronics

来源：评论

学校读者我要写书评

暂无评论

建议与咨询留下您的常用邮箱和电话号码，以便我们向您反馈解决方案和替代方法

时间限定

文献类型

馆藏选择

核心期刊

语言

文献类型

帮助

文字说明：

检索规则说明：

检索范例：

分类表

所选分类

限定检索结果

文献类型

馆藏范围

日期分布

学科分类号

主题

机构

作者

语言

请选择保存的检索档案：

请选择收藏分类：

通借通还

建议与咨询 留下您的常用邮箱和电话号码，以便我们向您反馈解决方案和替代方法

时间限定

文献类型

馆藏选择

核心期刊

语言

文献类型

帮助

文字说明：

检索规则说明：

检索范例：

分类表

所选分类

限定检索结果

文献类型

馆藏范围

日期分布

学科分类号

主题

机构

作者

语言

请选择保存的检索档案： 新增检索档案 确定 取消

请选择收藏分类： 新增自定义分类 确定 取消

通借通还

建议与咨询留下您的常用邮箱和电话号码，以便我们向您反馈解决方案和替代方法

请选择保存的检索档案：

请选择收藏分类：