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International Conference on asic

作者： Gongli Xiao Yiping Huang Zongming Bao State Key Laboratory of ASIC & System Department of Microelectronics Fudan University Shanghai China Information & Communications College Guilin University of Electronic and Technology Guilin China

The effect of refractive index of dielectric on transmission properties for metal/dielectric/metal photonic crystal (M/D/MPhC) by changing a thin dielectric layer was studied experimentally. We measured zero-order transmission spectra of three different M/D/MPhC samples in the middle-infrared region and found that the transmission peaks shifted regularly along with the refractive index change, owing to the role of surface plasmon polaritons (SPP) coupling in the M/D/MPhC. The position of transmission peak for M/D/MPhC is not only determined by the periodic structure on top Au film but is also affected by the refractive index of intermediate dielectric. By analyzing the relationship between transmission peaks and effective refractive index of a thin dielectric layer sandwiched by two gold layers, we find that the transmission properties for M/D/MPhC depend strongly on both the material property and the refractive index of dielectric being sandwiched by two metal films. The transmission peak sensitive nature to the refractive index of a thin dielectric layer in M/D/MPhC is promising in applications of biochemical sensing and tunable integrated plasmonic devices.

关键词： Refractive index Photonic crystals Plasmons Gold Optical films Dielectric measurements Couplings Periodic structures Material properties Dielectric thin films

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Retention-failure mechanism of TaN∕CuxO∕Cu resistive memory with good data retention capability

Journal of Vacuum Science & Technology B: Microelectronics a...

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Journal of Vacuum Science & Technology B: microelectronics and Nanometer Structures Processing, Measurement, and Phenomena 2009年第6期27卷 2468-2471页

作者： H. J. Wan P. Zhou L. Ye Y. Y. Lin J. G. Wu H. Wu M. H. Chi State Key Laboratory of ASIC and System Department of Microelectronics Fudan University Shanghai 200433 China Memory Technology Development Center Semiconductor Manufacturing International Corp. Shanghai 201203 China

Data retention characteristics and a failure mechanism of TaN∕CuxO∕Cu resistive memory device are investigated by a temperature-accelerated test method. Data retention capability at 85°C is sufficiently longer than 10years by using two different methods: simple extrapolation and Arrhenius equation. The high resistance state fails to low resistance state and low resistance state fails to high resistance state at the elevated temperature. It is attributed that different retention-failure mechanisms are responsible for high resistance state and low resistance state, respectively. A filament/charge trapped combined model is presented to clarify the retention-failure mechanism.

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New degradation mechanisms and reliability performance in tunneling field effect transistors

New degradation mechanisms and reliability performance in tu...

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International Electron Devices Meeting (IEDM)

作者： G. F. Jiao Z. X. Chen H. Y. Yu X. Y. Huang D. M. Huang N. Singh G. Q. Lo D.-L. Kwong Ming-Fu Li State Key Lab ASIC & System Department Microelectronics Fudan University Shanghai China Institute of Microelectronics Agency for Science Technology and Research Singapore School of EEE Nanyang Technological University Singapore Singapore

ISBN: (纸本)9781424456390;9781424456406

Tunneling n-FET reliability performance is studied for the first time by physical analysis and experimental measurements. (1) A new degradation mechanism by interface trap induced change of tunneling field and current I d is demonstrated. (2) Under PBTI or HC stress, there is a strong peak of vertical electric field E x at the gate/source overlapping region due to the P + doping of the source, inducing high interface trap degradation. These explain the large PBTI and HC degradation, very different from those observed in conventional n-MOSFETs.

关键词： Degradation Tunneling FETs Performance analysis Current measurement Electric variables measurement Stress measurement Time measurement Doping MOSFET circuits

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A systematic Investigation of TiN/CuxO/Cu RRAM with Long Retention and Excellent Thermal Stability

A Systematic Investigation of TiN/CuxO/Cu RRAM with Long Ret...

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IEEE International Memory Workshop (IMW)

作者： P. Zhou H. J. Wan Y. L. Song M. Yin H. B. Lv Y. Y. Lin S. Song R. Huang J. G. Wu M. H. Chi State Key Lab of ASIC & System and School of Microelectronics Fudan University Shanghai China Memory Technology Development Center Semiconductor Manufacturing International Corporation Shanghai China

ISBN: (纸本)9781424437627

The long retention, more than 10 years at 85degC, and excellent thermal reliability memory of TiN-Cu x O-Cu (with TiN cap layer as top electrode) is reported. TiN cap layer results in more stable reset from low resistance state (LRS) to high resistance state (HRS) under positive pulse and SET under negative pulse, which is beneficial for providing large programming current or voltage on the resistive random access memory (RRAM) resistor connected in series with a select transistor. Results show that the structure of TiN-Cu x O-Cu with its compatibility to CMOS technology appears a promising memory device for embedded application.

关键词： Tin Thermal stability Voltage Temperature Fabrication Electrodes Plasma measurements Sputtering Pulse measurements CMOS technology

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Power-aware FPGA packing algorithm

Power-aware FPGA packing algorithm

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International Conference on asic

作者： M. Yang Hongying Xu A.E.A. Almaini State Key Laboratory of ASIC & Systems Department of Microelectronics Fudan University China Napier University Edinburgh UK School of Engineering Napier University Edinburgh UK

Field-programmable gate array (FPGA) packing is one of abstraction levels in the FPGA CAD design flow which is aimed to pack logic components into clusters. As a result, the cluster-based FPGA can significantly improve timing, routability and power consumption as well. This paper proposes a novel packing algorithm using priori wire length estimation before actual routing taken apart. In addition, global placement was taken apart before packing to have additional placement information, which is also guided for the algorithm to selectively pack closely related module into one cluster. Experimental results show that power-aware packing algorithm achieves 5% power reduction on average compared to traditional algorithm.

关键词： Field programmable gate arrays Logic Clustering algorithms Energy consumption Circuit simulation Routing Power dissipation Computational modeling Design automation Switches

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Studies of NBTI in pMOSFETs with thermal and plasma nitrided SiON gate oxides by OFIT and FPM methods

Studies of NBTI in pMOSFETs with thermal and plasma nitrided...

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Annual International Symposium on Reliability Physics

作者： W. J. Liu D. Huang Q.Q. Sun C. C. Liao L.F. Zhang Z.H. Gan W. Wong Ming-Fu Li State Key Laboratory ASIC & System Department Microelectronics Fudan University Shanghai China Semiconductor Manufacturing International Corporation Shanghai China SNDL ECE Department National University of Singapore Singapore

NBTI in pMOSFETs with plasma (PNO) and thermal (TNO) nitrided SiON gate oxides are re-investigated using our newly developed on-the-fly interface trap (OFIT) and fast pulse I-V measurement (FPM) methods. The threshold voltage shift DeltaV TH is quantitatively decomposed into interface trap and oxide charge components. It is found that the interface trap generation under stress follows the power law with the same power index n and its temperature dependence, indicating the same interface degradation mechanism for both PNO and TNO devices. The NBTI degradation in TNO devices is larger than those in PNO devices, particularly the larger component of oxide charge. The result is explained by the different N profile of TNO from that of PNO devices, as supported by the first principle calculation.

关键词： Niobium compounds Titanium compounds MOSFETs Plasma measurements Pulse measurements Degradation Threshold voltage Power generation Stress Temperature dependence

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Resolving the Landauer paradox in ferroelectric switching by high-field charge injection

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Physical Review B 2009年第2期80卷 024119-024119页

作者： An-Quan Jiang Hyun Ju Lee Cheol Seong Hwang Ting-Ao Tang ASIC & System State Key Laboratory Department of Microelectronics Fudan University Shanghai 200433 China Department of Materials Science and Engineering and Inter-university Semiconductor Research Center Seoul National University Seoul 151-744 Korea

The critical dimension for reverse domain nucleation in the ferroelectric polarization switching of Pb(Zr0.4Ti0.6)O3 (PZT) thin film was estimated experimentally from a coercive voltage estimation in Pt/Al2O3/PZT/Ir ferroelectric thin-film capacitors with various Al2O3 thicknesses and switching currents. The critical nuclei dimension for reverse domain formation in a 300-nm-thick PZT was only 4.5±0.4 nm, which is in agreement with theoretical predictions of the critical nucleus size. Almost all the coercive voltage was applied to the nucleation layer thickness during ferroelectric switching. The classical Merz’s exponential law for the domain velocity description and Laudauer’s paradox of an implausibly large nucleation energy barrier were understood in terms of the charge-injection limited domain motion described by thermionic field emission at the Pt/Al2O3 interface or Fowler-Nordheim tunneling at the Pt/PZT interface.

关键词： aluminium compounds charge injection dielectric polarisation electric domains ferroelectric coercive field ferroelectric materials ferroelectric switching ferroelectric thin films field emission lead compounds nucleation platinum thermionic emission tunnelling zirconium compounds

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Memory Effect of Metal-Insulator-Silicon Capacitors with SiO2/HfO2/Al2O3 Dielectrics

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中国物理快报（英文版） 2008年第5期25卷 1908-1911页

作者： LIAO Zhong-Wei HUANG Yue ZHANG Min SUN Qing-Qing DING Shi-Jin ZHANG Wei State Key Laboratory of ASIC and System School of MicroelectronicsFudan UniversityShanghai 200433

Charge trapping characteristics of the metal-insulator-silicon (MIS) capacitors with Si02/HfO2/AlO3 stacked dielectrics are investigated for memory applications.A capacitance-voltage hysteresis memory window as large as 7.3 V is achieved for the gate voltage sweeping of ±12 V,and a fiat-band voltage shift of 1.5 V is observed in terms of programming under 5 V and I ***,the time- and voltage-dependent charge trapping characteristics are also demonstrated,the former is related to charge trapping saturation and the latter is ascribed to variable tunnelling barriers for electron injecting and discharging under different voltages.

关键词： FLASH MEMORY OVER-ERASE SONOS GATE DEVICES OXIDE CELL

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A 5Mgate/414mW networked media SoC in 0.13um CMOS with 720p multi-standard video decoding

A 5Mgate/414mW networked media SoC in 0.13um CMOS with 720p ...

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IEEE Asian Conference on Solid-state Circuits (ASSCC)

作者： Ning Ma Zhibo Pang Jun Chen Hannu Tenhunen Li-Rong Zheng IPack Vinn Excellence Center School of Information and Communication Technology Royal Institute of Technology Stockholm Sweden State Key Laboratory of ASIC and System School of Information Science and Engineering Fudan University Shanghai China

A flexible and high performance SoC is developed for networked media applications by integrating two RISC cores, Ethernet interface and coarse-grained configurable video decoding unit. Real-time 1280×720@25fps MPEG-2/MPEG-4/RealVideo decoding is achieved for on-line video streams. The SoC is fabricated in 0.13um single-poly eight-metal CMOS technology with die size of 6.4mm * 6.4mm. To achieve low power design, flexible power management strategy is implemented including dynamic configuration of clock frequency synthesis and module level clock gating according to the workloads. The maximum power consumption is 414mW at 1.2V supply voltage with the corresponding system frequency of 216MHz, when real-time HD (1280×720@25fps) video streams are decoded. The power consumption is reduced to 95mW for real-time CIF (352×288@25fps) video stream decoding at 27MHz system frequency.

关键词： Decoding Streaming media CMOS technology Clocks Energy consumption Frequency Real time systems Reduced instruction set computing Ethernet networks MPEG 4 Standard

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Polarity-Free Resistive Switching Characteristics of CuxO Films for Non-volatile Memory Applications

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Chinese Physics Letters 2008年第3期25卷 1087-1090页

作者：吕杭炳周鹏傅秀峰尹明宋雅丽唐立汤庭鳌林殷茵 School of Microelectronics and State Key Lab of ASIC & System Fudan University Shanghai 200433

Resistive switching characteristics of CuxO films grown by plasma oxidation process at room temperature are investigated. Both bipolar and unipolar stable resistive switching behaviours are observed and confirmed by repeated current voltage measurements. It is found that the RESET current is dependent on SET compliance current. The mechanism behind this new phenomenon can be understood in terms of conductive filaments formation/rupture with the contribution of Joule heating.

关键词： supernova explosion proto-neutron star shock wave

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