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检索条件"机构=School of Microelectronics and State Key Laboratory of ASIC and System"

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Physical and optical properties of ZnO thin films grown by DC sputtering deposition

Physical and optical properties of ZnO thin films grown by D...

引用

International Conference on Solid-state and Integrated Circuit Technology

作者： Tao Chen Shu-Yi Liu Christophe Detavernier R. L. Van Meirhaeghe Xin-Ping Qu State key laboratory of Asic and system Department of Microelectronics Fudan University Shanghai China Department of Solid State Science Ghent University Ghent Belgium

ISBN: (纸本)9781424421855

The effects of the deposition condition of DC sputtering on the properties of ZnO thin films were systematic investigated. ZnO films have been prepared by DC sputtering on the Si and glass substrates in the Ar and O 2 /Ar ambient with different substrate temperature ranging from room temperature to 300°C. Optimal results of the ZnO film were obtained with a deposition temperature of 300°C in the O 2 /Ar ambient. The film has a preferential orientation of (002) and the Zn to O ratio is stoichiometric with a strong band-edge emission in the ultraviolet region. All the films deposited on glass have an optical transmittance over 80 % in the wavelength ranging from 400 nm to 800 nm.

关键词： Optical films Sputtering Zinc oxide Substrates Argon Semiconductor films X-ray scattering Glass Temperature distribution Pulsed laser deposition

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Investigations of NBTI by conventional and new measurement methods for p-MOSFETs

Investigations of NBTI by conventional and new measurement m...

引用

IEEE International Nanoelectronics Conference (INEC)

作者： W.J. Liu Z.Y. Liu D. Huang Y. Luo C.C. Liao L.F. Zhang Z.H. Gan Waisum Wong Ming-Fu Li State Key Laboratory ASIC & System Department Microelectronics Fudan University Shanghai China Semiconductor Manufacturing International Corporation Sanghai China

The conventional and the fast pulsed IV measurements are carried out for the extraction of the threshold voltage shift for p-MOSFETs under stress. In addition, the on-the-fly interface trap (OFIT) measurement technique recently developed by our group is applied to the characterization of interface trap generation and recovery. The OFIT data are compared with those obtained using conventional charge pumping and direct-current current-voltage measurements. It is shown that the time delay during various measurements affects the measured characteristics of NBTI, which may mislead the understanding of NBTI mechanism. It is found that the interface trap generation plays a more important role in NBTI than that of oxide charges in the long time, especially for 10 years lifetime prediction. The results on the interface trap generation suggest a dispersive transport process, which indicates that the classical reaction-diffusion model should be reconsidered carefully.

关键词： Stress Time measurement International Electron Devices Meeting Stress measurement Data models Predictive models Nanoelectronics

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A wideband CMOS variable gain low noise amplifier based on single-to-differential stage for TV tuner applications

A wideband CMOS variable gain low noise amplifier based on s...

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IEEE Asian Conference on Solid-state Circuits (ASSCC)

作者： Kefeng Han Liang Zou Youchun Liao Hao Min Zhangwen Tang ASIC & System State Key Laboratory Fudan University Shanghai China Ratio Microelectronics Technology Co. Ltd Shanghai China

A wideband CMOS variable gain low noise amplifier (VGLNA) used for TV tuner is presented. A single-to-differential (S2D) circuit other than an off-chip balun is applied for high gain mode and a resistive attenuator is for five steps (6 dB per step) attenuation in low gain mode. The performance of S2D, especially the noise factor is analyzed. The chip is implemented in a 0.18-mum 1P6M mixed-signal CMOS process. Measurements show that in the 50-860 MHz frequency range, the VGLNA achieves 15 dB maximum gain, 31 dB variable gain range, a minimum 3.8 dB noise figure and 2.6 dBm 11P3 at 15 dB gain while consumes 5.7 mA from a 1.8 V supply.

关键词： Gain Broadband amplifiers Low-noise amplifiers TV Tuners Circuit noise Impedance matching Attenuators Attenuation Performance analysis

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Comprehensive studies of BTI effects in CMOSFETs with SiON by new measurement techniques

Comprehensive studies of BTI effects in CMOSFETs with SiON b...

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Annual International Symposium on Reliability Physics

作者： Z. Y. Liu Daming Huang W. J. Liu C. C. Liao L. F. Zhang Z. H. Gan Waisum Wong Ming-Fu Li State Key Laboratory ASIC & Syst Department Microelectronics Fudan University Shanghai China Semiconductor Manufacturing International Corporation Shanghai China State Key Laboratory ASIC & System Department Microelectronics Fudan University Shanghai China SNDL ECE Dept National University of Singapore Singapore

In this work, we combine our recently developed recovery free on-the-fly interface traps measurement (OFIT) and fast-pulsed-measurement (FPM) to conduct a comprehensive study of BTI degradations for both n- and p-MOSFETs with SiON gate dielectric. The results provide the most reliable data for the understanding and modeling of BTI degradation and also provide new insights to re-access the impact of BTI in logic and analog circuits and SRAM applications.

关键词： CMOSFETs Measurement techniques Stress measurement Degradation Current measurement Pulse measurements Phase measurement Tunneling Charge measurement Plasma measurements

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Enhancement of Endurance for CuxO based RRAM cell

Enhancement of Endurance for CuxO based RRAM cell

引用

2008 9th International Conference on Solid-state and Integrated-Circuit Technology

作者： M.Yin P.Zhou H.B.Lv T.A.Tang B.A.Chen Y.Y.Lin A.Bao M.H.Chi School of Microelectronics and State Key Lab of ASIC & System Fudan University Memory Technology Development Center Semiconductor Manufacturing International Corp.

For the first time,we report that the copper oxide （CuO） based Resistive Random Access Memory （RRAM） cell can achieve 10～4 cycles（i.e.0x better） as a new record as well as elimination of the initial "forming" than reported in *** Copper oxide is integrated in MTM（metal-insulator-metal） structure and is grown by plasma oxidation of Cu substrate,with CuO near upper surface and graded CuO（i.e. increasingly Cu rich or O-vacancies rich） toward the Cu substrate.A thinner CuO upper layer can eliminate "forming" process and,for in turn,greatly enhance the endurance of resistive switching by eliminating the damage during the "forming" process..

关键词： Enhancement of Endurance for CuxO based RRAM cell

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Effect of the ratio of hole radius to lattice spacing on transmission characteristics for metal/dielectric photonic crystal

Effect of the ratio of hole radius to lattice spacing on tra...

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International Conference on Solid-state and Integrated Circuit Technology

作者： Gongli Xiao Xiang Yao Xinmin Ji Jia Zhou Zongming Bao Yiping Huang The State Key Laboratory of ASIC & System Department of Microelectronics Fudan University Shanghai China Information & Communications College Guilin University of Electronic and Technology Guilin China

ISBN: (纸本)9781424421855

In this work, the effect of the ratio of hole radius to lattice spacing (r/a 0 ) on transmission characteristics for the metal/dielectric photonic crystal (MDPC) is investigated. The relationship between the photonic band gap (PBG) dependent on r/a 0 is discussed. This is because the characteristics of the PBG dependent on r/a 0 affect transmission characteristics for MDPC. The plane wave method (PWM) is used to simulate the PBG by changing r/a 0 from 0.2 to 0.3. For hexagonal arrays, we find that with r/a 0 being 0.25, the desired PBG structure is achieved. The experimental study for hexagonal air holes arrays residing in the Au@SiO 2 @Si structure by changing r/a 0 from 0.2 to 0.3 is presented. The result shows that with r/a 0 being 0.25, a narrow bandwidth and high efficiency transmission is achieved. It is demonstrated that the distinct effect of r/a 0 on transmission characteristics for MDPC structure.

关键词： Lattices Dielectrics Photonic crystals Photonic band gap Pulse width modulation Optical arrays Optical propagation Resonance Optical filters Laboratories

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Deterministic Worst-Case Performance Analysis for Wireless Sensor Networks

Deterministic Worst-Case Performance Analysis for Wireless S...

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International Wireless Communications and Mobile Computing Conference, IWCMC

作者： Huimin She Zhonghai Lu Axel Jantsch Li-Rong Zheng Dian Zhou ASIC & System State Key Laboratory Department of Microelectronics Fudan University Shanghai China Department of Electronic Computer and Software Systems Royal Institute of Technology Sweden

ISBN: (纸本)9781424422012

Dimensioning wireless sensor networks requires formal methods to guarantee network performance and cost in any conditions. Based on network calculus, this paper presents a deterministic analysis method for evaluating the worst-case performance and buffer cost of sensor networks. To this end, we introduce three general traffic flow operators and derive their delay and buffer bounds. These operators are general because they can be used in combination to model any complex traffic flowing scenarios in sensor networks. Furthermore, our method integrates variable duty cycle to allow the sensor nodes to operate at lower rates thus saving power. Moreover, it incorporates traffic splitting mechanisms in order to balance network workload and nodes' buffers. To show how our method applies to real applications, we conduct a case study on a fresh food tracking application, which monitors the food freshness in realtime. The experimental results demonstrate that our method can be either used to perform network planning before deployment, or to conduct network reconfiguration after deployment.

关键词： Delay Wireless sensor networks Calculus Resource management Telecommunication traffic Bandwidth Base stations

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Development of novel SU-8 based nanoimprint lithography

Development of novel SU-8 based nanoimprint lithography

引用

2008 9th International Conference on Solid-state and Integrated-Circuit Technology

作者： Shen-Qi Xie Bing-Rui Lu Jing Wan Rong Yang Yifang Chen Xin-Ping Qu Ran Liu State key lab of Asic and system Department of MicroelectronicsFudan University Rutherford Appleton Laboratory ChiltonDidcotOxonOX11 OQXUK

We present two kinds of novel nanoimprint lithography techniques based on SU-8 photoresist with single layer and tri-layer *** imprint templates with high aspect ratio were first fabricated by electron beam lithography（EBL） and reactive ion etch （RIE）,and then duplicated by the SU-8/SiO/PMMA tri-layer technique we *** properties such as pressure and temperature are determined to fabricate different nanostructures with various imprint *** developed processes,which provide us the capability to fabricate both imprinted nanostructures on resist and transferred nanopattems on substrate with high volume and low cost,are further applied in producing high density gratings,planar chiral photonic meta-materials, and nanofluidics channels.

关键词： Development of novel SU-8 based nanoimprint lithography

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Design and fabrication of Bragg reflectors based on SU-8

Design and fabrication of Bragg reflectors based on SU-8

引用

2008 9th International Conference on Solid-state and Integrated-Circuit Technology

作者： Zhen Shu Jing Wan Shen-Qi Xie Bing-Rui Lu Yifang Chen Xin-Ping Qu Ran Liu State key lab of ASIC and System Department of MicroelectronicsFudan University Rutherford Appleton Laboratory ChiltonDidcotOxonOX11 OQXUK

＜正＞We report the design and fabrication of two kinds of distributed Bragg reflectors（DBRs）.One is a Bragg filter which introduces a periodic height modulation in part of a waveguide,and the other is a horizontal DBR with a deeply patterned grating structure in a waveguide at a freespace wavelength of 1.55 urn（the propagation loss of quartz fiber used in optical communication is lowest around 1.55 urn wavelength） based on a Si/Si02/SU8/air *** transfer matrix theory was used to calculate the spectral response of the Bragg filter and its dependence on the height modulation and the grating *** addition,a multilayer film reflection theory was applied to simulate reflection spectrum of the DBR and estimate the least number of pairs of DBR mirrors needed for almost 100%（＞ 99.6%） *** on the simulation results,we designed and successfully fabricated these two types of DBRs with Si/Si02/SU8/air structures.

关键词： [IEEE keyword]Distributed Bragg reflectors Mirrors Reflection Filtering theory Bragg gratings Optical waveguides Optical filters

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Physical and optical properties of ZnO thin films grown by DC sputtering deposition

Physical and optical properties of ZnO thin films grown by D...

引用

2008 9th International Conference on Solid-state and Integrated-Circuit Technology

作者： Tao Chen Shu-Yi Liu Christophe Detavernier R.L.Van Meirhaeghe Xin-Ping Qu State key laboratory of Asic and system Department of MicroelectronicsFudan University Department of Solid State Science Ghent UniversityKrijgslaan 281/S1B-9000 GhentBelgium

The effects of the deposition condition of DC sputtering on the properties of ZnO thin films were systematic *** films have been prepared by DC sputtering on the Si and glass substrates in the Ar and O/Ar ambient with different substrate temperature ranging from room temperature to 300℃.Optimal results of the ZnO film were obtained with a deposition temperature of 300℃in the O/Ar *** film has a preferential orientation of（002） and the Zn to O ratio is stoichiometric with a strong band-edge emission in the ultraviolet *** the films deposited on glass have an optical transmittance over 80%in the wavelength ranging from 400nm to 800nm.

关键词： ZnO Physical and optical properties of ZnO thin films grown by DC sputtering deposition

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