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5th International Conference on Semiconductor Technology, ISTC 2006

作者： Lu, Hong-Liang Sun, Liang Ding, Shi-Jin Xu, Min Zhang, David Wei Wang, Li-Kang State Key Laboratory of ASIC and System Department of Microelectronics Fudan University Shanghai China

ISBN: (纸本)1566774373

Al2O3 thin films were deposited by atomic layer deposition (ALD) on HF-cleaned and NH3 plasma-treated GaAs surfaces, respectively. The precursors used for Al2O3 films are Trimethylaluminum (TMA) and water vapour (H2O). The structural properties of Al2O3/GaAs interfaces were investigated by X-ray photoelectron spectroscopy (XPS) and high-resolution transmission electron microscopy (HRTEM). XPS analyses revealed that GaAs oxides and the elemental As were efficiently removed during the NH3 plasma pretreatment process. In addition, MOS capacitor with Al2O3 gate dielectric on GaAs substrate pretreated by NH3 plasma exhibited the improved electrical properties, which has a higher accumulation capacitance compared to a similar device with only cleaned by HF acid, indicating that the NH3-treated GaAs surface was effectively protected from the degradation at the whole process of Al2O3 ALD.

关键词： Interfaces (materials)

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Copper pulse plating on Ru/TaSiN barrier

Copper pulse plating on Ru/TaSiN barrier

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ICSICT-2006: 2006 8th International Conference on Solid-state and Integrated Circuit Technology

作者： Zeng, Lei Xu, Sai-Sheng Tan, Jing-Jing Zhang, Li-Feng Zhang, Wei Wang, Li-Kang Qu, Xin-Ping State Key Laboratory of ASIC and System School of Microelectronics Fudan University Shanghai 200433 China Limited Company Shanghai 201203 China

ISBN: (纸本)1424401615

The properties of pulse plated copper electrodeposits (1 μm) on ruthenium (5nm) /TaSiN (5nm) diffusion barrier with current density ranging from 2 to 20 A/dm2 are studied. The resistivity of the Cu film is about 27 μΩ, · cm. A (111) preferential orientation is found in almost all cases, which would be good to electromigration performance. Grain size of Cu electrodeposits reduces with increasing current density. Different growth mode is found in low and high current densities. The surface morphology of the copper electrodeposits is very rough at low current densities, due to the bigger grain size. © 2006 IEEE.

关键词： Diffusion barriers

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Fast conversion for large Canonical OR-coincidence functions

Fast conversion for large Canonical OR-coincidence functions

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APCCAS 2006 - 2006 IEEE Asia Pacific Conference on Circuits and systems

作者： Yang, M. Wang, L. Almaini, A.E.A. State Key Laboratory of ASIC and System Microelectronics Department Fudan University Shanghai China School of Engineering Napier University Edinburgh United Kingdom

ISBN: (纸本)1424403871

Fixed Polarity Canonical OR-coincidence (COC) expansions based on inclusive-OR and OR operations are dual forms of fixed polarity Reed-Muller expansions . Traditionally, they are obtained from maxterms of Canonical Products-of-sum (CPOS) expansions. Two conversion methods are proposed for generating fixed polarity COC expansions. The first proposed method called maxterm method is based on traditional maxterm method. Fast conversion speed is achieved after the coefficients were divided into several segments to reduce the duplication of the calculation. The second proposed method called minterm method generates fixed polarity COC expansions directly from Programmable Logic Array (PLA) files. The minterm method can on average achieve 37.57% speed improvement over the maxterm method. Both algorithms outperform published work significantly. ©2006 IEEE.

关键词： Timing circuits

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Design and simulation of ID longitudinal acoustic resonator for photoacoustic spectroscopy

Design and simulation of ID longitudinal acoustic resonator ...

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ICSICT-2006: 2006 8th International Conference on Solid-state and Integrated Circuit Technology

作者： Jia, Luo Xinming, Ji Jianye, Wang Jia, Zhou Guoping, Ru Yiping, Huang ASIC and System State Key Lab. School of Microelectronics Fudan University 2 0 Handan Road Shanghai 200433 China

ISBN: (纸本)1424401615

The design of acoustic resonator is critical for the sensitivity of photoacoustic (PA) gas detection. In this paper, a LC Circuit model is built for the simulation of ID acoustic resonator with considerations of some nonideal factors such as the boundary layers in detail. The model is verified by the device and the corresponding experimental data. As an application of the model, a ID acoustic resonator for CO photoacoustic spectroscopy is studied. The effects of the structrual parameters, quality factor and resonant frequency on the performance of the device are theoretically analyzed. It's worthy noted that for the first time we point out the effect of the ambient temperature. © 2006 IEEE.

关键词： Acoustic resonators

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Electrical properties study of Ni (Pt)-silicide/Si contacts

Electrical properties study of Ni (Pt)-silicide/Si contacts

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ICSICT-2006: 2006 8th International Conference on Solid-state and Integrated Circuit Technology

作者： Huang, Yifei Jiang, Yu-Long Ru, Guo-Ping Lu, Fang Cai, Qijia Cao, Shihai Li, Bing-Zong ASIC and System State Key Lab. School of Microelectronics Fudan University Shanghai 200433 China State Key Lab. of Applied Surface Physics Fudan University Shanghai 200433 China

The electrical propertie of Ni (Pt)-silicide/Si contact is studied and it is revealed that the Schottky barrier contact obeys a complicated two Gauss distribution. It is demonstrated that the Pt interface layer can no... 详细信息

ISBN: (纸本)1424401615

关键词： Silicides

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Electrical properties study of Ni (Pt)-silicide/Si contacts

Electrical properties study of Ni (Pt)-silicide/Si contacts

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International Conference on Solid-state and Integrated Circuit Technology

作者： Yifei Huang Yu-long Jiang Guo-ping Ru Fang Lu Qijia Cai Shihai Cao Bing-zong Li ASIC & System State Key Laboratory School of Microelectronics Fudan University Shanghai China

The electrical properties of Ni (Pt)-silicide/Si contact is studied and it is revealed that the Schottky barrier contact obeys a complicated two Gauss distribution. It is demonstrated that the Pt interface layer can n... 详细信息

ISBN: (纸本)1424401607

关键词： Contacts Schottky barriers Temperature distribution X-ray scattering Gaussian distribution Temperature dependence Substrates Thermal stability Silicon Silicides

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A fast capacitance extraction engine

A fast capacitance extraction engine

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ICSICT-2006: 2006 8th International Conference on Solid-state and Integrated Circuit Technology

作者： Sun, Shilei Xue, Jintao Liu, Li Wang, Gaofeng Computer School Wuhan University Wuhan 430072 China State Key Laboratory of ASIC and System Fudan University Shanghai 200433 China Institute of Microelectronics and Information Technology Wuhan University Wuhan 430072 China

ISBN: (纸本)1424401615

A fast interconnect capacitance extraction engine is realized and presented here. Employing a fast multipole accelerated Generalized Minimal Residual (GMRES) based three-dimensional (3-D) field solver, this software tool can quickly and accurately extract parasitic capacitances of arbitrary interconnects embedded in piece-wise constant dielectrics. This engine is also capable of performing fast and accurate capacitance extraction for critical nets in Radio Frequency (RF) applications, IC designs, and MicroElectroMechanical systems (MEMS). The architecture of this extraction engine is described. Numerical examples are included to validate the extraction engine and demonstrate the capabilities of this extraction engine. © 2006 IEEE.

关键词： Capacitance

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Analysis and design of a Δ∑ modulator for fractional-N frequency synthesis

Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors

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Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors 2006年第1期27卷 41-46页

作者： Zhang, Weichao Xu, Jun Zheng, Zengyu Ren, Junyan State Key Laboratory of ASIC and System Department of Microelectronics Fudan University Shanghai 200433 China

This paper presents the design considerations and implementation of a novel topology digital multistage-noise-shaping (MASH) delta-sigma modulator suitable for fractional-N phase-locked-loop (PLL) frequency synthesis. In an effort to reduce the complexity and dissipation, a pipeline technique has been used, and the proposed carry save tree (CST) algorithm optimizes the multi-input adder structure. The circuit has been verified through Matlab simulation, asic implementation, and FPGA experiment, which exhibits high performance and potential for a gigahertz range, low-power monolithic CMOS frequency synthesizer.

关键词： Modulators

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Design and simulation of 1D longitudinal acoustic resonator for photoacoustic spectroscopy

Design and simulation of 1D longitudinal acoustic resonator ...

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2006 8th International Conference on Solid-state and Integrated Circuit Technology

作者： Jia Luo Xinming Ji Jianye Wang Jia Zhou Guoping Ru Yiping Huang ASIC ＆ System State Key Lab School of Microelectronics Fudan University

ISBN: (纸本)1424401607

＜正＞The design of acoustic resonator is critical for the sensitivity of photoacoustic（PA） gas *** this paper, a LC Circuit model is built for the simulation of 1D acoustic resonator with considerations of some nonideal factors such as the boundary layers in *** model is verified by the device and the corresponding experimental *** an application of the model,a 1D acoustic resonator for CO photoacoustic spectroscopy is studied. The effects of the structrual parameters,quality factor and resonant frequency on the performance of the device are theoretically ***’s worthy noted that for the first time we point out the effect of the ambient temperature.

关键词： ACOUSTIC RESONATORS Photoacoustic spectroscopy boundary layer simulating resonant frequencies Experimental data

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A 5.5-GHz power amplifier for wide bandwidth polar modulator

A 5.5-GHz power amplifier for wide bandwidth polar modulator

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ICSICT-2006: 2006 8th International Conference on Solid-state and Integrated Circuit Technology

作者： Zheng, Renliang Sanduleanu, Mihai Aditham, R.P. De Vreede, L.C.N. Ren, Junyan State Key Laboratory of ASIC and System Fudan University Shanghai China Integrated Transceivers Research Group Philips Research Laboratories Eindhoven Netherlands Laboratory of High-Frequency Technology and Components Department of Microelectronics TU-Delft Netherlands

ISBN: (纸本)1424401615

An efficiency-enhanced power amplifier (PA) is analysed and designed for wide-bandwidth envelope elimination and restoration (EER) system with application to orthogonal frequency-division multiplexing (OFDM) wireless local area network (WLAN) system. The proposed PA has no bandwidth limitation as that of the DC-DC converter used in classical polar modulator. The simulation result shows that the average power-added efficiency (PAE) is 25.38% at a 5.5Ghz average output power of 19dBm with peak to average ratio about 7.7dB and the overall error vector magnitude (EVM) remains less than 10% throughout its output power range. This PA shows much higher PAE among the reported WLAN BiCMOS HBT PAs as well as satisfying IEEE802.11a transmitter back off requirement. © 2006 IEEE.

关键词： Power amplifiers

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