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2006 8th International Conference on Solid-state and Integrated Circuit Technology

作者： Lei Zeng Sai-Sheng Xu Jing-jing Tan Li-feng Zhang Wei Zhang Li-Kang Wang Xin-ping Qu State Key Laboratory of ASIC & System Fudan-Novellus Interconnect Research CenterSchool of MicroelectronicsFudan University ROHM&HAAS Electronic Materials(Shanghai) Limited Company

ISBN: (纸本)1424401607

The properties of pulse plated copper electrodeposits(1μm) on ruthenium(5nm)/TaSiN(5nm) diffusion barrier with current density ranging from 2 to 20 A/dm are *** resistivity of the Cu film is about 2.7/μΩ.cm.A(111) preferential orientation is found in almost all cases,which would be good to electromigration *** size of Cu electrodeposits reduces with increasing current density. Different growth mode is found in low and high current *** surface morphology of the copper electrodeposits is very rough at low current densities, due to the bigger grain size.

关键词： Copper interconnect Ruthenium Pulse plating

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Exact Minimization of Large Fixed Polarity Dual Form of Reed-Muller Functions

Exact Minimization of Large Fixed Polarity Dual Form of Reed...

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2006 8th International Conference on Solid-state and Integrated Circuit Technology

作者： M.Yang H.Xu L.Wang J.R.Tong A.E.A.Almaini State Key Lab of ASIC ＆ System Microelectronics Dept.Fudan University Tianjin Vocational College of Mechanics and Electricity School of Engineering Napier University

ISBN: (纸本)1424401607

Dual Form of Reed-Muller（DFRM） expansions are implemented in OR/XNOR logic,which are based on the features of coincidence operation and known as fixed polarity Canonical OR-Coincidence（COC） expansions. An efficient minimization method is proposed to find the best polarity COC expansion for large *** method derives one expansion from another adjacent polarity expansion using gray code,resulting in small space complexity O（M） and time complexity O（2~nM/ogM）(n and M are the number of input variables and the number of on-set COC maxterms).Hence,it makes minimization for large functions practical.

关键词： Logic Synthesis Optimization Dual Form of Reed-Muller EDA

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Electrical properties of metamorphic in0.52Al 0.48As/In0.65Ga0.35As HEMT's on GaAs substrate

Electrical properties of metamorphic in0.52Al 0.48As/In0.65G...

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ICSICT-2006: 2006 8th International Conference on Solid-state and Integrated Circuit Technology

作者： Qiu, Z.J. Liu, R. Zhang, S.L. Gui, Y.S. Cui, L.J. Zeng, Y.P. Chu, J.H. School of Microelectronics Fudan University Shanghai 200433 China State Key Lab. of ASIC System and Micro/Nanoelectronics Science and Technology Innovation Platform Fudan University Shanghai 200433 China National Laboratory for Infrared Physics Shanghai Institute of Technical Physics Chinese Academy of Sciences Shanghai 200083 China Institute of Semiconductors Chinese Academy of Sciences Beijing 10008 China

ISBN: (纸本)1424401615

Variable magnetic field Hall measurements were performed to investigate the electrical properties in In0.52Al0.48As/In 0.65Ga0.35As metamorphic high electron mobility transistors (MMHEMT's) on GaAs substrate at the temperature range from 4 to 100 K. The Shubnikov-de Hass (SdH) measurement shows the two-dimensional electronic behavior and two-subband electron occupation in MMHEMT's. The electron densities and mobilities of the two subbands are obtained by fast Fourier transform analysis. Both the SdH oscillations and conventional Hall analysis are in good agreement in the determination of total electron density, which is about 2.1×1012 cm-2 due to incomplete transfer of the electrons. The temperature dependence of the electron mobility indicates that at low temperature alloy scattering dominates, whereas at high temperature, the mobility is mainly limited by optical phonon scattering. © 2006 IEEE.

关键词： High electron mobility transistors

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A 5.5-GHz Power Amplifier For Wide Bandwidth Polar Modulator

A 5.5-GHz Power Amplifier For Wide Bandwidth Polar Modulator

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2006 8th International Conference on Solid-state and Integrated Circuit Technology

作者： Renliang Zheng Mihai Sanduleanu R.P.Aditham L.C.N.de Vreede Junyan Ren State Key Laboratory of ASIC ＆ System Fudan University Integrated Transceivers Research Group Philips Research LaboratoriesEindhovenThe Netherlands Laboratory of High-Frequency Technology ＆ Components Department of MicroelectronicsTU-Delft

ISBN: (纸本)1424401607

An efficiency-enhanced power amplifier(PA) is analysed and designed for wide-bandwidth envelope elimination and restoration(EER) system with application to orthogonal frequency-division multiplexing(OFDM) wireless local area Retwork(WLAN) *** proposed PA has no bandwidth limitation as that of the DC-DC converter used in classical polar *** simulation result shows that the average poweradded efficiency(PAE) is 25.38%at a 5.5Ghz average output power of 19dBm with peak to average ratio about 7.7dB and the overall error vector magnitude(EVM) remains less than 10% throughout its output power *** PA shows much higher PAE among the reported WLAN BiCMOS HBT PAs as well as satisfying IEEE802.1 la transmitter back off requirement.

关键词： Envelope elimination and restoration(EER) Orthogonal frequency-division multiplexing(OFDM) power amplifier(PA) EVM,WLAN polar modulator.

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Modified frame expansion based sequential equivalence checking algorithm

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Jisuanji Fuzhu Sheji Yu Tuxingxue Xuebao/Journal of Computer-Aided Design and Computer Graphics 2006年第1期18卷 53-61页

作者： Ding, Min Tang, Pushan ASIC and System State Key Laboratory Microelectronics Department Fudan University Shanghai 200433 China

A new frame-expansion based sequential equivalence checking algorithm is proposed. It derives from the induction-based model checking algorithm, and merges the checking processes of base condition and induction condition using our simplified unsatisfiable core extraction in SAT problem. Furthermore, in order to reduce the state space searched during frame expansion, structural fixed-point technique is exploited, and quasi-dynamic unique state constraint is proposed. Experimental results show that during the expansion of circuit frames, the elapsed time of our method increases much slower than that of the induction based algorithm. The total elapsed time is also promising when verifying sequentially optimized circuits.

关键词： Formal verification Satisfiability (SAT) Sequential equivalence checking

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Ultra-thin Ru/TaN Bi-layer as diffusion barrier to seedless copper interconnect

Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors

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Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors 2006年第SUPPL.期27卷 196-201页

作者： Tan, Jingjing Zhou, Mi Chen, Tao Xie, Qi Ru, Guoping Qu, Xinping ASIC and System of State Key Laboratory Department of Microelectronics Fudan University Shanghai 200433 China

The property of Ru/TaN bi-layer as diffusion barrier to copper interconnect is investigated. Ru/TaN and Cu/Ru/ TaN films are prepared by ion beam sputtering system without breaking the vacuum. Rapid thermal annealing is carried out in high purity N2 atmosphere. Sheet resistance measurement and X-ray diffraction show good thermal stability of the Ru/TaN bi-layer structure. Bias leakage current versus time measurement, which is very sensitive to mobile ions in the oxide, is also used to investigate the copper MOS structure. The direct copper electroplating on the Ru/TaN/Si structure is also carried out. The results show that the Ru/TaN bi-layer with good thermal stability and diffusion barrier property can be widely used in seedless copper interconnects.

关键词： Diffusion barriers

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Electrical properties of metamorphic In0.52Al0.48As/In0.65Ga0.35As HEMT's on GaAs substrate

Electrical properties of metamorphic In0.52Al0.48As/In0.65Ga...

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2006 8th International Conference on Solid-state and Integrated Circuit Technology

作者： Z.J.Qiu R.Liu S.L.Zhang Y.S.Gui L.J.Cui Y.P.Zeng J.H.Chu School of Microelectronics Fudan University State Key Lab of ASIC & System & Micro/Nanoelectronics Science and Technology Innovation Platform Fudan University National Laboratory for Infrared Physics Shanghai Institute of Technical PhysicsChinese Academy of Sciences Institute of Semiconductors Chinese Academy of Sciences

ISBN: (纸本)1424401607

Variable magnetic field Hall measurements were performed to investigate the electrical properties in InA10.48As/InGaAs metamorphic high electron mobility transistors（MMHEMT's） on GaAs substrate at the temperature range from 4 to 100 *** Shubnikov-de Hass（SdH） measurement shows the two-dimensional electronic behavior and two-subband electron occupation in MMHEMT'*** electron densities and mobilities of the two subbands are obtained by fast Fourier transform *** the SdH oscillations and conventional Hall analysis are in good agreement in the determination of total electron density, which is about 2.1x10 cm due to incomplete transfer of the *** temperature dependence of the electron mobility indicates that at low temperature alloy scattering dominates,whereas at high temperature,the mobility is mainly limited by optical phonon scattering.

关键词： As HEMT's on GaAs substrate As/In Electrical properties of metamorphic In

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Some solutions for writing current reduction and high density application of phase change memory

Some solutions for writing current reduction and high densit...

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International Conference on Solid-state and Integrated Circuit Technology

作者： Yinyin Lin Jie Feng Yaifei Cai Hangbing Lv Feifei Liao Xin Liu Tingao Tang Baowei Qiao Yunfeng Lai Yi Zhang Bingchu Cai Bomy Chen Department of Microelectronics ASIC and System State Key Laboratory Fudan University Shanghai China Research Institute of Micro/Nanometer Technology Shanghai Jiaotong University Shanghai China Silicon Storage Technology Inc. Sunnyvale CA USA

High writing current is the bottle-neck of PCM application and efforts focus on merely materials doping to improve crystal resistivity, novel structure to decrease active area etc. Here some solutions of our group are... 详细信息

ISBN: (纸本)1424401607

关键词： Writing Phase change memory CMOS technology Conductivity Doping Crystallization Phase change materials CMOS process Lithography microelectronics

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FPGA PLACEMENT OPTIMIZATION BY TWO-STEP UNIFIED GENETIC ALGORITHM AND SIMULATED ANNEALING ALGORITHM

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Journal of Electronics(China) 2006年第4期23卷 632-636页

作者： Yang Meng A.E.A. Almaini Wang Pengjun School of Engineering Napier University 10 Colinton Road.Edinburgh EH10 5DT UK State Key Lab of ASIC ＆ System Microelectronics Dept Fudan University Shanghai 201203 China Institute of Circuits and Systems Ningbo University Ningbo 315211. China

Genetic Algorithm (GA) is a biologically inspired technique and widely used to solve numerous combinational optimization problems. It works on a population of individuals, not just one single solution. As a result, it avoids converging to the local optimum. However, it takes too much CPU time in the late process of GA. On the other hand, in the late process Simulated Annealing (SA) converges faster than GA but it is easily trapped to local optimum. In this letter, a useful method that unifies GA and SA is introduced, which utilizes the advantage of the global search ability of GA and fast convergence of SA. The experimental results show that the proposed algorithm outperforms GA in terms of CPU time without degradation of performance. It also achieves highly comparable placement cost compared to the state-of-the-art results obtained by Versatile Place and Route (VPR) Tool.

关键词： Genetic Algorithm （GA） Simulated Annealing （SA） Placement FPGA EDA

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Effect of Trimethyl Aluminium Surface Pretreatment on Atomic Layer Deposition Al2O3 Ultra-Thin Film on Si Substrate

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Chinese Physics Letters 2005年第9期22卷 2418-2421页

作者：徐敏卢红亮丁士进孙亮张卫汪礼康 State Key Laboratory of ASIC and System Department of Microelectronics Fudan University Shanghai 200433

Ultra-thin Al2O3 dielectric films have been deposited on Si substrates by using trimethyl aluminium （TMA） and water as precursors in an atomic layer deposition （ALD） system. Growth of the interracial layer between ultra-thin Al2O3 and the Si substrate is effectively suppressed by a long-time TMA surface pretreatment of the Si substrate prior to A1203 atomic layer deposition. High resolution transmission electron microscopy （TEM） images show that the thickness of the interracial layer is reduced to be 0.5nm for the sample with TMA pretreatment lasting 3600s. The x-ray photoelectron spectroscopy results indicate that the A1203 film deposited on the TMApretreated Si surface exhibits very good thermal stability. However, a hysteresis of about 50mV is observed in the C- V curve of the samples with the TMA pretreatment.

关键词： NUCLEATION SILICON GROWTH OXIDES

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