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Reaction Mechanism of ZrCl4 with Ge/Si(100)-(2×1):A Density Functional Theory Study of Initial Stage of ZrO2 Atomic Layer Deposition on SiGe Alloy Surface

Reaction Mechanism of ZrCl4 with Ge/Si(100)-(2×1):A Density...

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2004 7th International Conference on Solid-state and Integrated Circuits Technology（ICSICT 2004）

作者： David Wei Zhang State Key Laboratory of ASIC & System Department of MicroelectronicsFudan UniversityShanghai 200433China

The reaction mechanism of ZrCl adsorption and dissociation on Ge/Si(100)-(2×1) surface is investigated with density functional *** Si-Si,Si-Ge and Ge-Ge one-dimer cluster models are employed in the calculation to represent Ge/Si(100)-(2×1) surface with different Ge *** reaction of ZrCl with hydroxylated Ge/Si(100)-(2×1) surface forms a bridged ZrCl site,while on H-passivated surface ZrCl site is *** reaction energy barrier of ZrCl with H-passivated SiGe surface is much higher than ZrCl with hydroxylated SiGe surface,which indicates that the reaction proceeds more slowly on H-passivated surface than on OH-terminated *** adsorbates and products on Ge-Ge dimer cluster model of Ge/Si(100)-(2×1) are most stable while structures on Si-Si dimer cluster model are least stable.

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Gas microsensors based on polymer-carbon black composites

Gas microsensors based on polymer-carbon black composites

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International Conference on Solid-state and Integrated Circuit Technology

作者： O. Yang H. Xie X. Sun Y. Huang ASIC & System State Key Laboratory Department of Microelectronics Fudan University Shanghai China East China University of Science and Technology Shanghai China

We describe novel chemical gas sensor arrays based on polymer-carbon black composites. Four different polymers, poly(4-vinyl phenol), poly(ethylene oxide), polycapraclactone (PCL) and polyethylene-co-vinylacetate (PEVA), are employed as the sensing materials which are fixed on the array of interdigitated microelectrode pairs. The resistance changes of the sensors to four organic gases (acetone, ethanol, toluene and methanol) at 500 ppm concentration have been examined. By principal component analysis of the responses of the microsensors, it is clear that four kinds of the same concentration of the different gases can easily be discriminated. Furthermore, when some gases, such as ethanol and acetone, are detected using the sensing membranes of poly(4-vinyl phenol) and poly(ethylene oxide), the relationship between the resistance changes and gas concentration in the range from 300 ppm to 1500 ppm can be approximated to a straight line.

关键词： Microsensors Polymers Gases Chemical sensors Sensor arrays Ethanol Gas detectors Microelectrodes Methanol Principal component analysis

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Novel gas sensor based on nano-zeolite films for the nerve agent simulant dimethylmethylphosphonate detection

Novel gas sensor based on nano-zeolite films for the nerve a...

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International Conference on Solid-state and Integrated Circuit Technology

作者： Haifen Xie Xiao Xiang Sun Qiudong Yang Jianye Wang Yiping Huang Physics Department of East China University of Science and Technology Shanghai China Department of Microelectronics ASIC and System State Key Laboratory Shanghai China

ISBN: (纸本)078038511X

A novel gas sensor based on nanosized zeolite for the detection of nerve agent simulant gas dimethylmethylphosphonate (DMMP) is developed. Novel sensing membrane materials of nanosized zeolite films of ZSM-5 and of Ag/sup +/ modified ZSM-5 are immobilized on a QCM (quartz crystal microbalance) piezoelectric sensor device. A frequency shift with different concentrations of DMMP is measured. The gas sensor based on nanosized zeolite in resonating mode, whose resonant frequency shifts due to mass loading, has shown high sensitivity for detecting DMMP. The minimum detectable concentration of DMMP is 1 ppm in N/sub 2/ at 303 K. The frequency shift is about 60 Hz for 1 ppm DMMP. In order to improve the selectivity of the sensor to DMMP from other organic gases, different pore sized films, such as ZSM-5 zeolites and Ag/sup +/ modified ZSM-5 zeolites, are studied. The frequency shifts for two other organic gases, such as acetone and ethanol, at 1 ppm concentration are observed for the sensor selectivity detection. The relationship between frequency shift and temperature for 1 ppm DMMP has been studied. The best adsorption temperature is 303 K and the desorption temperature is at the DMMP boiling point, 473 K. Using principle component analysis (PCA); we can easily qualify and quantify the DMMP gas.

关键词： Gas detectors Frequency Temperature sensors Gases Biomembranes Crystalline materials Piezoelectric materials Nanostructured materials Nanoscale devices Piezoelectric films

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Model order reduction for scanning electrochemical microscope: the treatment of nonzero initial condition

Model order reduction for scanning electrochemical microscop...

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IEEE SENSORS

作者： Lihong Feng D. Koziol E.B. Rudnyi J.G. Korvink ASIC & System State-key Laboratory Microelectronics Department Fudan University Shanghai China IMTEK-Institute for Microsystem Technology University of Freiburg Freiburg im Breisgau Germany

At the present time, model order reduction is a well-established technique for fast simulation of large-scale models based on ordinary differential equations, especially those in the field of integrated circuits and micro-electromechanical systems. We describe the application of model reduction to electrochemical simulation related to scanning electrochemical microscopy. Model reduction allows us to reduce the simulation time significantly and, at the same time, it maintains the high accuracy.

关键词： Microscopy Circuit simulation Computational modeling Integrated circuit modeling Differential equations Partial differential equations Microelectromechanical systems Reduced order systems Computer simulation Numerical simulation

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Optimal ramped-gate soft programming of over-erased flash EEPROM cells at given current

Optimal ramped-gate soft programming of over-erased flash EE...

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2004 7th International Conference on Solid-state and Integrated Circuits Technology Proceedings, ICSICT 2004

作者： Quan, Wu-Yun Baek, Chang-Ki Kim, Dae M. Gang, Ruan Huang, Yiping ASIC and System State-Key Research Lab. Department of Microelectronics Fudan University 220 Handan-road 200433 Shanghai China School of Electrical Engineering and Computer Science ISRC Seoul National University Kwanak P.O. Box 34 Seoul 151-744 Korea Republic of Korea Institute for Advanced Study 207-43 Cheongryangri Seoul Korea Republic of

Presented herein is an efficient simulation technique enabling systematic investigation of the soft programming over-erased flash EEPROM cells. The simulation provides a method by which to find the optimal soft programming technique for given current. The method requires only the cell performance data and allows investigation of the soft programming under various bias conditions. In principle, the methodology can also be used to investigate the programming and erase operations. © 2004 IEEE.

关键词： Flash memory

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Optimal ramped-gate soft programming of over-erased flash EEPROM cells at given current

Optimal ramped-gate soft programming of over-erased flash EE...

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International Conference on Solid-state and Integrated Circuit Technology

作者： Wu-yun Quan Chang-Ki Baek D.M. Kim Ruan Gang Yiping Huang ASIC & System State-Key Research Laboratory Department of Microelectronics Fudan University Shanghai China School of Electrical Engineering and Computer Science and ISRC Seoul National University Seoul South Korea Korea Institute of Advanced Study Seoul South Korea

ISBN: (纸本)078038511X

关键词： EPROM Threshold voltage Computational modeling microelectronics Computer science Boosting Voltage control Charge pumps Testing Performance evaluation

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Direct nonlinear order reduction with variational analysis 04

Direct nonlinear order reduction with variational analysis

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Design, Automation and Test in Europe Conference and Exhibition

作者： Lihong Feng Xuan Zeng C. Chiang Dian Zhou Qiang Fang ASIC & System State Key Laboratory Microelectronics Department Fudan University Shanghai China Synopsys Inc. CA USA E.E. Department University of Texas Dallas Richardson TX USA Shanghai Institute of Organic Chemistry Chinese Academy and Sciences China

ISBN: (纸本)9780769520858

The variational analysis has been employed in for order reduction of weakly nonlinear systems. For a relatively strong nonlinear system, this method will mostly lose efficiency because of the exponentially increased number of inputs in higher order variational equations caused by the individual reduction process of the variational systems. Moreover, the inexact inputs into the higher order variational equations indispensably introduce extra errors in the order reduction process. Inspired by the variational analysis, we propose a direct model order reduction method. The order of the approximate polynomial system of the original nonlinear system is directly reduced by one project space. The proposed direct reduction technique can easily avoid the errors brought by inexact inputs and the exponentially increased inputs. We show theoretically and experimentally that the proposed method can achieve much more accurate reduced system with smaller order size than the conventional variational equation order reduction method.

关键词： Nonlinear systems Linear systems Taylor series Nonlinear equations Educational programs Application specific integrated circuits microelectronics Polynomials Educational technology Integrated circuit modeling

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Frequency domain wavelet method with GMRES for large-scale linear circuit simulation

Frequency domain wavelet method with GMRES for large-scale l...

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IEEE International Symposium on Circuits and systems (ISCAS)

作者： Jian Wang Xuan Zeng Wei Cai C. Chiang Jiarong Tong Dian Zhou ASIC & System State Key Laboratory Microelectronics Department Fudan University Shanghai China Mathematics Department University of North Carolina Charlotte Charlotte NC USA Advanced Technology Group Synopsys Inc. Mountain View CA USA Electrical Engineering Department University of Texas Dallas Richardson TX USA

In this paper, a frequency domain fast wavelet collocation method with GMRES (FFWCM-G) is proposed for the simulation of high-speed large-scale linear VLSI circuits. Taking advantages of wavelet expansion and adaptive scheme, the number of frequency points for calculating frequency response is minimized. Moreover, due to the efficiency of GMRES as the internal iterative solver, the proposed method can achieve nearly linear time complexity, which undoubtedly would be more promising to simulate large-scale integrated circuits.

关键词： Frequency domain analysis Wavelet domain Large-scale systems Linear circuits Circuit simulation Very large scale integration Frequency response Iterative methods Integrated circuit modeling Large scale integration

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Rectifying characteristics of sputter-deposited SiGe diodes

Rectifying characteristics of sputter-deposited SiGe diodes

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作者： Ru, Guo-Ping Wang, Guang-Wei Jiang, Yu-Long Huang, Wei Qu, Xin-Ping Zhu, Shi-Yang Li, Bing-Zong Department of Microelectronics ASIC and System State Key Laboratory Fudan University Shanghai 200433 China

Rectifying characteristics of sputter-deposited SiGe diodes were investigated. Rectification ratios as high as 4000 and 1800 have been achieved in Pt/n-poly-SiGe and Ti/p-poly-SiGe Schottky diodes respectively. Schottky barrier heights were also determined. Results showed that the band alignment of poly-SiGe is different from that of epitaxial SiGe.

关键词： Semiconductor diodes

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Rectifying characteristics of sputter-deposited SiGe diodes

Journal of Vacuum Science & Technology B: Microelectronics a...

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Journal of Vacuum Science & Technology B: microelectronics and Nanometer Structures Processing, Measurement, and Phenomena 2003年第4期21卷 1301-1305页

作者： Guo-Ping Ru Guang-Wei Wang Yu-Long Jiang Wei Huang Xin-Ping Qu Shi-Yang Zhu Bing-Zong Li Department of Microelectronics ASIC & System State Key Laboratory Fudan University Shanghai 200433 China

Schottky and pn junction diodes with good rectifying characteristics have been prepared based on the polycrystalline SiGe (poly-SiGe) thin film deposited by the ion-beam-sputtering (IBS) technique. Boron and phosphorus diffusion techniques have been used to dope and crystallize as-deposited amorphous SiGe film. Rectification ratios as high as 4000 and 1800 have been achieved in Pt/n-poly-SiGe and Ti/p-poly-SiGe Schottky diodes, respectively, while rectification ratio higher than 1500 and breakdown voltage higher than 200 V have been achieved in poly-SiGe pn junction diodes. Schottky barrier height has been determined to be 0.62 and 0.59 eV for Pt/n-poly-Si0.81Ge0.19 and Ti/p-poly-Si0.81Ge0.19 contacts, respectively, which indicates that the band alignment of poly-SiGe may be substantially different from that of epitaxial SiGe.

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