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IEEE International Conference on Computer-Aided Design

作者： Ruiming Li Dian Zhou Jin Liu Xuan Zeng Department of Electrical Engineering University of Texas Dallas Richardson TX USA ASIC & System State-key Laboratory Microelectronics Department Fudan University Shanghai China

ISBN: (纸本)9781581137620

This paper studies the problems of minimizing power dissipation of an interconnect wire by simultaneously considering buffer insertion/sizing and wire sizing (BISWS). We consider two cases, namely minimizing power dissipation with optimal delay constraints, and minimizing power dissipation with a given delay penalty. We derive closed form optimal solutions for both cases. These closed form solutions can be used to efficiently estimate the power dissipation in the early stages of the VLSI designs. We observe that the power dissipation can be much different even with the same optimal delay.

关键词： Wire Power dissipation Very large scale integration Delay effects Permission Integrated circuit interconnections Power engineering and energy Power engineering computing Application specific integrated circuits microelectronics

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An efficient Sylvester equation solver for time domain circuit simulation by wavelet collocation method

An efficient Sylvester equation solver for time domain circu...

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IEEE International Symposium on Circuits and systems (ISCAS)

作者： Xuan Zeng Sheng Huang Yangfeng Su Dian Zhou ASIC & System State Key Laboratory Microelectronics Department Fudan University Shanghai China Mathematics Department Fudan University Shanghai China ECE Department University of Texas Dallas Richardson TX USA

ISBN: (纸本)0780377613

The Fast Wavelet Collocation Method (FWCM) is a recently proposed circuit simulation approach, which is very promising in achieving uniform error distribution and handling singularities in high-speed circuits, compared with conventional time domain simulation methods. In this paper, we aim to extend the wavelet collocation method to the simulation of large-scale circuits, where a large dimension Sylvester equation needs to be solved. The performance of the wavelet simulator is dominated by the time and memory consumption of the Sylvester equation solver. In order to improve the simulation efficiency, we propose a direct method to solve the Sylvester equation by Schur decomposition. Numerical experiments demonstrate that the proposed simulator can achieve higher computation speed and higher simulation accuracy as well as more robust convergence than SPICE.

关键词： Equations Circuit simulation Wavelet domain Frequency domain analysis Computational modeling Large-scale systems Vectors SPICE Very large scale integration Application specific integrated circuits

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Frequency domain wavelet method for high-speed circuit simulation

Frequency domain wavelet method for high-speed circuit simul...

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IEEE International Symposium on Circuits and systems (ISCAS)

作者： Xuan Zeng Sheng Huang Jian Wang Dian Zhou ASIC & System State-Key-Laboratory Microelectronics Department Fudan University Shanghai China ECE Department University of Technology Dallas TX USA

ISBN: (纸本)0780374487

In this paper, a Frequency domain Fast Wavelet Collocation Method (FFWCM) is proposed for the simulation of high-speed linear VLSI circuits. Compared with the time domain Fast Wavelet Collocation Method, the proposed FFWCM solves the state equation in the frequency domain and reduces the problem unknowns by avoiding expanding all the state variables with wavelet functions. Moreover, frequency domain singularities can be easily handled by an efficient adaptive scheme and the simulation error bound is guaranteed in the frequency domain. As a result, memory space and simulation time are greatly reduced by FFWCM, which makes it efficient for simulating large scale circuits. Numerical experimental results have further demonstrated the promising features of FFWCM.

关键词： Frequency domain analysis Wavelet domain Circuit simulation Very large scale integration Large-scale systems Computational modeling Equations Space technology Algorithm design and analysis Wavelet analysis

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Wavelet method for high-speed clock tree simulation

Wavelet method for high-speed clock tree simulation

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IEEE International Symposium on Circuits and systems (ISCAS)

作者： Xin Li Xuan Zeng Dian Zhou Xieting Ling ASIC & System State-Key Laboratory Microelectronics Department Fudan University Shanghai China ECE Department University of Texas Dallas Richardson TX USA

ISBN: (纸本)0780374487

In this paper, we propose a fast wavelet collocation algorithm for high-speed clock tree simulation. Taking advantage of the specific structure of clock trees and the superior computational property of wavelets, the proposed algorithm presents the following merits. (1) It can perform both transient simulation and steady-state analysis with arbitrary input. (2) It employs nonlinear buffer model and nonuniform interconnect wire model. (3) It has a low computational complexity O(N) and can deal with considerably large circuits. (4) The proposed wavelet method works in time domain so that the simulation error in time domain can be well-controlled. Numerical experiment results demonstrate the promising features of the proposed algorithm in high-speed clock tree simulations.

关键词： Clocks Computational modeling Circuit simulation Wavelet analysis Wavelet domain Analytical models Time domain analysis Circuit analysis computing Transient analysis Steady-state

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A novel MEMS gas sensor with effective combination of high sensitivity and high selectivity

A novel MEMS gas sensor with effective combination of high s...

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IEEE International Symposium on Applications of Ferroelectrics (ISAF)

作者： Jia Zhou Po Li Song Zhang Feng Zhou Yiping Huang Pengyuan Yang Minhang Bao Department of Mechanical Engineering Institute of Petrochemical Technology East China University of Science and Technology Shanghai China Department of Microelectronics ASIC and System State Key Laboratory Chemistry Department Fudan University Shanghai China

A, novel MEMS gas sensor including a PZT thin film layer and a zeolite layer is developed in this paper, which shows effective combination of high sensitivity and high selectivity. Working in resonating mode, the sensor depicts the mass loading due to molecular adsorption of the zeolite by the frequency shift. The relationship between the frequency shift in percent and the concentration of Freon is linear. The minimum mass loading of 3.5 /spl times/ 10/sup -9/ and the sensitivity of -0.0024%/ppm can be determined from the experimental results.

关键词： Micromechanical devices Gas detectors Mechanical sensors Structural beams Chemical sensors Equations Chemical technology Resonant frequency Temperature sensors Application specific integrated circuits

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Epitaxial Growth of High-Quality Silicon Films on Double-Layer Porous Silicon

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Chinese Physics Letters 2001年第11期18卷 1507-1509页

作者： HUANG Yi-Ping ZHU Shi-Yang LI Ai-Zhen WANG Jin HUANG Jing-Yun YE Zhi-Zhen Department of Microelectronics ASIC&System State Key LaboratoryFudan UniversityShanghai 200433 State Key Laboratory of Silicon Material Science Zhejiang UniversityHangzhou 310027

The epitaxial growth of a high-quality silicon layer on double-layer porous silicon by ultra-high vacuum/chemical vapour deposition has been reported. The two-step anodization process results in a double-layer porous silicon structure with a different porosity. This double-layer porous silicon structure and an extended low-temperature annealing in a vacuum system was found to be helpful in subsequent silicon epitaxial growth. X-ray diffraction,cross-sectional transmission electron microscopy and spreading resistance testing were used in this work to study the properties of epitaxial silicon layers grown on the double-layer porous silicon. The results show that the epitaxial silicon layer is of good crystallinity and the same orientation with the silicon substrate and the porous silicon layer.

关键词： porous double vacuum

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Nonequilibrium nondissipative thermodynamics - and its application to diamond film deposition 6

Nonequilibrium nondissipative thermodynamics - and its appli...

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6th International Conference on Solid-state and Integrated Circuit Technology, ICSICT 2001

作者： Wang, Ji-Tao Department of Microelectronics ASIC System State Key Laboratory Fudan University Shanghai200433 China

ISBN: (纸本)0780365208

The equality of the 2ndlaw of thermodynamics had been regarded as the sufficient and necessary condition for a system being in equilibrium for about 150 years. However, such a classical or traditional basic concept should be overthrown or changed for complex systems including nonspontaneous reaction(s). Therefore, a new field of nonequilibrium nondissipative thermodynamics has been introduced by the author into a complete systematization of modem thermodynamics. Nonequilibrium nondissipative thermodynamics provides a solid theoretical base for quantitative calculation of nonequilibrium phase diagrams. A series of calculated nonequilibrium phase diagrams for activated low pressure diamond films deposition agree excellently with a great number of experimental data reported in the literature. Nonequilibrium nondissipative thermodynamics and the nonequilibrium phase diagram theorem can also be used for cubic boron nitride deposition and other solid-state and integrated circuit technology. © 2001 IEEE.

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Schottky barrier height inhomogeneities of nickel mono-silicide/n-Si contact studied by I-V-T technique 6

Schottky barrier height inhomogeneities of nickel mono-silic...

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6th International Conference on Solid-state and Integrated Circuit Technology, ICSICT 2001

作者： Jiang, Yu-Long Tian, Yun Ru, Guo-Ping Han, Yong-Zhao Lu, Fang Li, Bing-Zong Department of Microelectronics ASIC and System State Key Lab. Fudan University Shanghai200433 China State Key Laboratory of Applied Surface Physics Fudan University Shanghai200433 China

ISBN: (纸本)0780365208

The current-voltage (I-V) characteristics of nickel mono-silicide/n-Si Schottky diodes fabricated at different temperature and measured over a temperature range of 78 to 299 K have been interpreted on the basis of thermionic emission (TE) across an inhomogeneous Schottky contact. The experiment shows that the apparent barrier height φap-1/T plot is a straight line within the whole experimental temperature for samples annealed at temperature ranging from 500°C to 600°C, however, for other samples annealed at temperature below 500°C and above 600°C the φap-1/T Plots become more complicated. The linear case shows the Schottky barrier height inhomogeneities (SBHI) obeys single Gaussian distribution. © 2001 IEEE.

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Nonequilibrium Nondissipative Thermodynamics——and Its Application to Diamond Film Deposition

Nonequilibrium Nondissipative Thermodynamics——and Its Appl...

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2001 6th International Conference on Solid-state and Integrated Circuit Technology(ICSICT-2001)

作者： Ji-Tao Wang Department of Microelectronics ASIC and System State Key Laboratory Fudan University

The equality of the 2nd law of thermodynamics had been regarded as the sufficient and necessary condition for a system being in equilibrium for about 150 years. However,such a classical or tradi

ISBN: (纸本)0780365208

The equality of the 2nd law of thermodynamics had been regarded as the sufficient and necessary condition for a system being in equilibrium for about 150 years. However,such a classical or tradi

关键词： diamond nonequilibrium thermodynamics CVD coatings phase diagrams nonequilibrium nondissipative thermodynamics diamond film deposition second law of thermodynamics nonequilibrium phase diagrams cubic boron nitride deposition CVD C BN

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The effect of Pd addition on silicide formation for Ni/Pd bilayers on silicon 6

The effect of Pd addition on silicide formation for Ni/Pd bi...

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6th International Conference on Solid-state and Integrated Circuit Technology, ICSICT 2001

作者： Qu, Xin-Ping Detavernier, C. Meirhaeghe, R.L. Ru, Guo-Ping Li, Bing-Zong Dept. of Microelectronics ASIC and system State key laboratory Fudan University Shanghai 200433 China Dept. of Solid State Science Gent University Krijgslaan B-9000 Gent Belgium

ISBN: (纸本)0780365208

Ni/Pd bilayers were deposited on n-Si [100] substrates and annealed up to 900°C using rapid thermal annealing (RTA). Results show that the nucleation temperature for NiSi2is delayed due to the Id addition. The higher the Pd addition, the higher the nucleation temperature of NiSi2. Meanwhile, the PdSi nucleation is promoted because of alloying with Ni and PdSi can be formed at temperature lower than 750°C. When the Ni/Pd/Si samples were annealed at 500°C, the barrier height value of the formed silicide/Si contact is near that of NiSi/Si. Annealing at 600°C increased the barrier height value, which indicates that Ni(Pd)Si was formed. The I-V-T measurements on both Ni/Pd/Si and Ni/Si samples show that, the Schottky barrier formed from Ni/Pd/Si annealed at 600°C has a better linear I-V characteristic and lower leakage current than those of NiSi/Si. © 2001 IEEE.

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