Ni/Pd bilayers were deposited on n-Si [100] substrates and annealed up to 900/spl deg/C using rapid thermal annealing (RTA). Results show that the nucleation temperature for NiSi/sub 2/ is delayed due to the Id additi...
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ISBN:
(纸本)0780365208
Ni/Pd bilayers were deposited on n-Si [100] substrates and annealed up to 900/spl deg/C using rapid thermal annealing (RTA). Results show that the nucleation temperature for NiSi/sub 2/ is delayed due to the Id addition. The higher the Pd addition, the higher the nucleation temperature of NiSi/sub 2/. Meanwhile, the PdSi nucleation is promoted because of alloying with Ni and PdSi can be formed at temperature lower than 750/spl deg/C. When the Ni/Pd/Si samples were annealed at 500/spl deg/C, the barrier height value of the formed silicide/Si contact is near that of NiSi/Si. Annealing at 600/spl deg/C increased the barrier height value, which indicates that Ni(Pd)Si was formed. The I-V-T measurements on both Ni/Pd/Si and Ni/Si samples show that, the Schottky barrier formed from Ni/Pd/Si annealed at 600/spl deg/C has a better linear I-V characteristic and lower leakage current than those of NiSi/Si.
The design of a general-purpose parallel interface based on CPLD is described. As a result, system design can be simplified by using a parallel interface circuit that is composed of CPLDs in an embedded system. Flexib...
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The design of a general-purpose parallel interface based on CPLD is described. As a result, system design can be simplified by using a parallel interface circuit that is composed of CPLDs in an embedded system. Flexibility is another advantage. The module method has been used in the design, so the design procedure becomes simpler and more efficient. It also has reusable performance.
In this paper, we develop a wavelet collocation method with nonlinear companding for behavioral modeling of analog circuits. To construct the behavioral models, the circuit is first partitioned into building blocks an...
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ISBN:
(纸本)0780372476
In this paper, we develop a wavelet collocation method with nonlinear companding for behavioral modeling of analog circuits. To construct the behavioral models, the circuit is first partitioned into building blocks and the input-output function of each block is then approximated by wavelets. As the blocks are mathematically represented by sets of simple wavelet basis functions, the computation cost for the behavioral simulation is significantly reduced. The proposed method presents several merits compared with those conventional techniques. First, the algorithm for expanding input-output functions by wavelets is a general-purpose approach, which can be applied in automatically modeling of different analog circuit blocks with different structures. Second, both the small signal effect and the large signal effect are modeled in a unified formulation, which eases the process of modeling and simulation. Third, a nonlinear companding method is developed to control the modeling error distribution, To demonstrate the promising features of the proposed method, a 4th order switched-current filter is employed to build the behavioral model.
The Schottky characteristics of Ti contacts on nGaAs surface-treated by N2 plasma at different temperature are *** capacitance-voltage（C-V） characteristic of the samples surface-treated by
The Schottky characteristics of Ti contacts on nGaAs surface-treated by N2 plasma at different temperature are *** capacitance-voltage（C-V） characteristic of the samples surface-treated by
The Schottky characteristics of Ti contacts on n-GaAs surface-treated by N/sub 2/ plasma at different temperature are studied. The capacitance-voltage (C-V) characteristic of the samples surface-treated by N/sub 2/ pl...
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ISBN:
(纸本)0780365208
The Schottky characteristics of Ti contacts on n-GaAs surface-treated by N/sub 2/ plasma at different temperature are studied. The capacitance-voltage (C-V) characteristic of the samples surface-treated by N/sub 2/ plasma is far more ideal than that of the pure GaAs samples. The Schottky characteristic of the samples surface-treated at 350/spl deg/C is better than that of samples treated at 950/spl deg/C. In this article, the zero-bias Schottky barrier height (SBH) /spl Phi//sub b0/, the flat-band SBH /spl Phi//sub b//sup 0/, the thickness of the interfacial layer /spl delta/, the permittivity of the interfacial layer /spl epsiv//sub i/ and the ideality factor n of the samples at different nitridation temperature are extracted from the forward, reverse current-voltage (I-V) and the C-V measurement, respectively. Also the distribution of interface states density is qualitatively determined from the forward bias I-V characteristics by taking into account the bias dependence of the effective barrier height.
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