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IEEE International Conference on Integrated Circuits, Technologies and Applications (ICTA)

作者： K. Xiao J. Liu JN. Deng X. Gong I J. Wan School of information science and technology State key lab of ASIC and System Fudan University China National University of Singapore (NUS) Singapore

ISBN: (数字)9781728150406

ISBN: (纸本)9781728150413

This paper reviews our recent work on two novel semiconductor devices built on silicon-on-insulator (SOI) substrate. The Z 2 -FET, which operates with feedback mechanism, has been demonstrated with extremely sharp switching behaviors and gate-controlled hysteresis. It has found applications in high performance memories, electrostatic discharge protection and photodetection. PISD utilizes the substrate of SOI for photon-electron conversion and senses the photoelectron in-situ without need of any additional device. It has been used as one-transistor active pixel sensor (1T-APS) which is more compact than conventional CMOS sensor.

关键词： Substrates Logic gates Random access memory Sensors Silicon-on-insulator Electrostatic discharges MOSFET

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Enhancement of Endurance for CuxO based RRAM cell

Enhancement of Endurance for CuxO based RRAM cell

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2008 9th International Conference on Solid-state and Integrated-Circuit Technology

作者： M.Yin P.Zhou H.B.Lv T.A.Tang B.A.Chen Y.Y.Lin A.Bao M.H.Chi School of Microelectronics and State Key Lab of ASIC & System Fudan University Memory Technology Development Center Semiconductor Manufacturing International Corp.

For the first time,we report that the copper oxide （CuO） based Resistive Random Access Memory （RRAM） cell can achieve 10～4 cycles（i.e.0x better） as a new record as well as elimination of the initial "forming" than reported in *** Copper oxide is integrated in MTM（metal-insulator-metal） structure and is grown by plasma oxidation of Cu substrate,with CuO near upper surface and graded CuO（i.e. increasingly Cu rich or O-vacancies rich） toward the Cu substrate.A thinner CuO upper layer can eliminate "forming" process and,for in turn,greatly enhance the endurance of resistive switching by eliminating the damage during the "forming" process..

关键词： Enhancement of Endurance for CuxO based RRAM cell

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Novel Semiconductor devices Based on SOL Substrate

Novel Semiconductor devices Based on SOL Substrate

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China Semiconductor Technology International Conference (CSTIC)

作者： K. Xiao J. Liu JN. Deng YL. Jiang WZ. Bao A. Zaslavsky S. Cristoloveanu X. Gong J. Wan State key lab of ASIC and System School of Information Science and Engineering Fudan University Shanghai China State key lab of ASIC and System School of Microelectronics Fudan University Shanghai China Brown University Providence RI USA IMEP-LAHC INP-Grenoble/Minatec Grenoble France National University of Singapore (NUS) Singapore

ISBN: (数字)9781728165585

ISBN: (纸本)9781728165592

In this work, we review our recent studies on several novel devices built on silicon-on-insulator (SOI) substrates. The sharp-switching Z2- FET , based on a feedback mechanism, has been demonstrated as suitable for many applications. The PISD, capable of in-situ photoelectron sensing, has been used as a one-transistor active pixel sensor (1T-APS). Furthermore, an SOI/MoS 2 heterojunction FET has been demonstrated as both a photodetector with a dynamic response spectrum and as a novel one-transistor wavelength detector (1T-WD) with an output signal sensitive to the variation of wavelength rather than intensity.

关键词： Semiconductor devices Silicon-on-insulator Heterojunctions Sensors Sulfur Substrates Physics

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Optical behavior in visible frequency through free-standing chiral metamaterial in SiNx membrane

Optical behavior in visible frequency through free-standing ...

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The 6th International Conference on Nanoscience and Technology, China 2015 (第六届中国国际纳米科学技术会议)

作者： Bingrui Lu Chen Xu Sichao Zhang Junjie Li Yifang Chen Nanolithography and Application Research Group State key lab of Asic and SystemSchool of Information Science and EngineeringFudan UniversityShanghai 200433China

Metamaterials are artificially structured media that are engineered for electromagnetic properties such as negative refractive index,giant optical activity and circular *** include multiband circular polarization transformers and wave plates,chirality based sensors *** studies on metamaterials for their enormously strong chiral responses,covers various structural designs such as helical,split ring,combined U-or L-shape,twisted arc,twisted rosette,metallic cut wire structures ***,the research on the actual devices is limited because the actual structures are normally generated on a substrate,which interferes with the optical behavior of the metamaterial itself,making it difficult to distinguish the contributions between the two *** order to study the optical behavior of the metamaterial,developing a method to create free-standing metamaterial structures is *** we report a method for free-standing chiral metamaterials on SiNx ***,a suspended SiNx membrane of 100 nm thickness is fabricated on a double-side-polished silicon *** SiNx layer is deposited by LPCVD onto one side of the silicon *** the other side multiple windows in the size of 1 mm by 1 mm are etched through the silicon substrate using KOH chemical with the protection of photoresist,leaving the SiNx film *** a JEOL 6300FS EBL system is used to create chiral patterns in the PMMA resist on the SiNx ***,Reactive Ion Etching by Samco RIE system is applied with CHF3 and O2 to etch through the SiNx membrane to form the stencil *** depositing the metal film on top of the etched SiNx membrane,the free-standing metamaterial structures are *** this method,free-standing chiral metamaterial structures are generated for optical behavior study within the visible frequency *** facilitates enhanced experimental research on metamaterial devices in the study of artificial light manipulation.

关键词： chiral metamaterial free-standing visible frequency optical behavior

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Nanofabrication of high aspect ratio optical components for hard X-ray optics

Nanofabrication of high aspect ratio optical components for ...

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The 6th International Conference on Nanoscience and Technology, China 2015 (第六届中国国际纳米科学技术会议)

作者： Jianpeng Liu Jinhai Shao Xin Li Sichao Zhang Bingrui Lu Yifang Chen Nanolithography and Application Research Group State key lab of Asic and SystemSchool of Information Science and EngineeringFudan UniversityShanghai 200433China

Full-field transmission X-ray microscopy(TXM)is widely applied in basic study of science,covering microelectronics,bioscience,organic chemistry,materials science,etc [1].The key components in X-ray optics are condensers providing an illumination onto the testing samples and the high-resolution zone plate as an objective lens forming a magnified image of the sample [2,3].So the high aspect ratio(height/width)condensers and zone plates are very important.

关键词： Electron beam lithography.High aspect ratio.Hard x-ray optics

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High responsivity and flexible deep-UV phototransistor based on Ta-doped β-Ga_(2)O_(3)

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npj Flexible Electronics 2022年第1期6卷 457-465页

作者： Xiao-Xi Li Guang Zeng Yu-Chun Li Hao Zhang Zhi-Gang Ji Ying-Guo Yang Man Luo Wei-Da Hu David Wei Zhang Hong-Liang Lu State Key Laboratory of ASIC and System Shanghai Institute of Intelligent Electronics&SystemsSchool of MicroelectronicsFudan University200433 ShanghaiChina National Key Laboratory of Science and Technology on Micro/Nano Fabrication Shanghai Jiao Tong University200240 ShanghaiChina Shanghai Synchrotron Radiation Facility(SSRF) Zhangjiang LabShanghai Advanced Research Institute&Shanghai Institute of Applied PhysicsChinese Academy of Sciences201204 ShanghaiChina State Key Laboratory of Infrared Physics Shanghai Institute of Technical PhysicsChinese Academy of Sciences200083 ShanghaiChina

Deep-ultraviolet(DUV)phototransistors have shown great potential applications in UV imaging,artificial intelligence,and wearable *** a large number of wide bandgap semiconductors,the quasi-two-dimensionalβ-Ga_(2)O_(3) is considered as an ideal candidate for DUV photodetector ***,we report a high responsivity(R)and fully flexible Ta-dopedβ-Ga_(2)O_(3) DUV phototransistor which exhibits outstanding optoelectrical properties with a high R of 1.32×10^(6) A/W,a large detectivity of 5.68×10^(14) Jones,a great photo-to-dark current ratio of 1.10×10^(10)%,a high external quantum efficiency of 6.60×10^(8)%,and an ultra-fast response time of~3.50 ***,the flexible Ta-dopedβ-Ga_(2)O_(3) device also displays high reliability and mechanical flexibility that can sustain well after over 1×10^(4) bending ***,high-contrast imaging of UV light was obtained on the flexible DUV detector arrays,which can be efficiently trained and recognized by an artificial neural *** findings offer a perspective to develop wearable optoelectronics and UV imaging based on high-performance flexibleβ-Ga_(2)O_(3) DUV phototransistors,providing an inspiration for the future work in artificial intelligence and bionic robot fields.

关键词： transistor responsivity artificial

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A 9.8 Gbps, 6.5 mW forwarded-clock receiver with phase interpolator and equalized current sampler in 65 nm CMOS

A 9.8 Gbps, 6.5 mW forwarded-clock receiver with phase inter...

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Microwave, MTT-S International Symposium

作者： Shunli Ma Sai Manoj Hao Yu Junyan Ren Roshan Weerasekera State Key Lab of ASIC and System Fudan University Shanghai China School of EEE Nanyang Technological University Singapore Institute of Microelectronics Singapore

A full-rate energy-efficient forwarded-clock (FC) receiver is demonstrated in this paper. A current sampler with continuous-time equalization is realized with 20 GHz bandwidth in sampling for data recovery. Moreover, a phase interpolator is introduced to generate sampling clock with deskew for data recovery. The testing chip was fabricated in 65 nm CMOS process in area of 0.16 mm 2 . Measurement shows that the FC receiver can achieve a data-rate up to 9.8 Gbps and power consumption is 6.5 mW.

关键词： CMOS integrated circuits Clocks CMOS technology Receivers Oscillators Large scale integration

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MajorityNets: BNNs Utilising Approximate Popcount for Improved Efficiency

arXiv

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arXiv 2020年

作者： Rasoulinezhad, Seyedramin Fox, Sean Zhou, Hao Wang, Lingli Boland, David Leong, Philip H.W. School of Electrical and Information Engineering University of Sydney 2006 Australia State Key Lab of ASIC and System Fudan University Shanghai201203 China

—Binarized neural networks (BNNs) have shown exciting potential for utilising neural networks in embedded implementations where area, energy and latency constraints are paramount. With BNNs, multiply-accumulate (MAC) operations can be simplified to XnorPopcount operations, leading to massive reductions in both memory and computation resources. Furthermore, multiple efficient implementations of BNNs have been reported on field-programmable gate array (FPGA) implementations. This paper proposes a smaller, faster, more energy-efficient approximate replacement for the XnorPopcount operation, called XNorMaj, inspired by state-of-the-art FPGA look-up table schemes which benefit FPGA implementations. We show that XNorMaj is up to 2× more resource-efficient than the XnorPopcount operation. While the XNorMaj operation has a minor detrimental impact on accuracy, the resource savings enable us to use larger networks to recover the loss. Copyright © 2020, The Authors. All rights reserved.

关键词： Field programmable gate arrays (FPGA)

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The Design of Digital Demodulator Based on Dynamic Threshold

The Design of Digital Demodulator Based on Dynamic Threshold

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2016 13th IEEE International Conference on Solid-state and Integrated Circuit Technology (ICSICT)

作者： ZHANG Xingxing LU Jicheng LI Xiayu YU Jun State Key Lab of ASIC & System Fudan University School of Microelectronics Fudan University Shanghai Fudan Microelectronics Group Co. Ltd.

In this paper,the influence of signal and noise on digital demodulator as well as the importance of a reasonable threshold are elaborated. A new method of threshold setting is presented, which is adjusted according to...

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LUXOR: An FPGA logic cell architecture for efficient compressor tree implementations

arXiv

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arXiv 2020年

作者： Rasoulinezhad, SeyedRamin Siddhartha Zhou, Hao Wang, Lingli Boland, David Leong, Philip H.W. School of Electrical and Information Engineering University of Sydney Sydney2006 Australia State Key Lab of ASIC and System Fudan University Shanghai201203 China

We propose two tiers of modifications to FPGA logic cell architecture to deliver a variety of performance and utilization benefits with only minor area overheads. In the first tier, we augment existing commercial logic cell datapaths with a 6-input XOR gate in order to improve the expressiveness of each element, while maintaining backward compatibility. This new architecture is vendor-agnostic, and we refer to it as LUXOR. We also consider a secondary tier of vendor-specific modifications to both Xilinx and Intel FPGAs, which we refer to as X-LUXOR+ and I-LUXOR+ respectively. We demonstrate that compressor tree synthesis using generalized parallel counters (GPCs) is further improved with the proposed modifications. Using both the Intel adaptive logic module and the Xilinx slice at the 65nm technology node for a comparative study, it is shown that the silicon area overhead is less than 0.5% for LUXOR and 5–6% for LUXOR+, while the delay increments are 1–6% and 3–9% respectively. We demonstrate that LUXOR can deliver an average reduction of 13–19% in logic utilization on micro-benchmarks from a variety of *** benchmarks benefit the most with an average reduction of 37–47% in logic utilization, which is due to the highly-efficient mapping of the XnorPopcount operation on our proposed LUXOR+ logic cells. Copyright © 2020, The Authors. All rights reserved.

关键词： Logic devices

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