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International Electron Devices Meeting (IEDM)

作者： G. F. Jiao Z. X. Chen H. Y. Yu X. Y. Huang D. M. Huang N. Singh G. Q. Lo D.-L. Kwong Ming-Fu Li State Key Lab ASIC & System Department Microelectronics Fudan University Shanghai China Institute of Microelectronics Agency for Science Technology and Research Singapore School of EEE Nanyang Technological University Singapore Singapore

ISBN: (纸本)9781424456390;9781424456406

Tunneling n-FET reliability performance is studied for the first time by physical analysis and experimental measurements. (1) A new degradation mechanism by interface trap induced change of tunneling field and current I d is demonstrated. (2) Under PBTI or HC stress, there is a strong peak of vertical electric field E x at the gate/source overlapping region due to the P + doping of the source, inducing high interface trap degradation. These explain the large PBTI and HC degradation, very different from those observed in conventional n-MOSFETs.

关键词： Degradation Tunneling FETs Performance analysis Current measurement Electric variables measurement Stress measurement Time measurement Doping MOSFET circuits

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Polarity-Free Resistive Switching Characteristics of CuxO Films for Non-volatile Memory Applications

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Chinese Physics Letters 2008年第3期25卷 1087-1090页

作者：吕杭炳周鹏傅秀峰尹明宋雅丽唐立汤庭鳌林殷茵 School of Microelectronics and State Key Lab of ASIC & System Fudan University Shanghai 200433

Resistive switching characteristics of CuxO films grown by plasma oxidation process at room temperature are investigated. Both bipolar and unipolar stable resistive switching behaviours are observed and confirmed by repeated current voltage measurements. It is found that the RESET current is dependent on SET compliance current. The mechanism behind this new phenomenon can be understood in terms of conductive filaments formation/rupture with the contribution of Joule heating.

关键词： supernova explosion proto-neutron star shock wave

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Fabrication and Transmission Characteristic of PDMS Plasma Photonic Crystal

Fabrication and Transmission Characteristic of PDMS Plasma P...

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2008 9th International Conference on Solid-state and Integrated-Circuit Technology

作者： Jinying Zhang Hua Huang Xinming Ji Jia Zhou Yiping Huang ASIC and System State Key Lab School of MicroelectronicsFudan University

＜正＞Two-dimensional（2-D） polydimethylsiloxane （PDMS） plasma photonic crystal with square lattice structure was fabricated by hydro-casting method using Si-based *** transmission characteristic of PDMS plasma photonic crystal was studied by UV-visible *** results show that the plasma photonic crystal can improve the transmitted rate in visible light range.

关键词： PDMS hydro-casting plasma photonic crystal enhanced transmission

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Role of Si implantation in control of underlap length in Schottky-Barrier source/drain MOSFETs on ultrathin body SOI

Role of Si implantation in control of underlap length in Sch...

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9th International Conference on ULtimate Integration of Silicon, ULIS 2008

作者： Qiu, Z.J. Zhang, Z. Olsson, J. Lu, J. Hellström, P.-E. Liu, R. Östling, M. Zhang, S.-L. State Key Lab. of ASIC and System School of Microelectronics Fudan University Shanghai China School of Information and Communication Technology Royal Institute of Technology Stockholm Sweden Angstrom Laboratory Uppsala University Uppsala Sweden

ISBN: (纸本)9781424417308

This works demonstrates a novel approach using Si implantation prior to Pt deposition and PtSi formation to control the underlap length between the PtSi source/drain regions to the gate in Schottky-Barrier (SB-) MOSFETs. Dopant segregation at the PtSi/Si interface is used to enhance device performance. With the Ion/Ioff current ratio as an indicator, optimized Si implant doses are found for both n- and p-channel SB-MOSFETs. Through an effective barrier width, the underlap length has direct implication on the leakage current. © 2008 IEEE.

关键词： Schottky barrier diodes

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Silicide as diffusion source for dopant segregation in 70-nm MOSFETs with PtSi Schottky-barrier source/drain on ultrathin-body SOI

Silicide as diffusion source for dopant segregation in 70-nm...

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9th International Conference on ULtimate Integration of Silicon, ULIS 2008

作者： Qiu, Z.J. Zhang, Z. Lu, J. Liu, R. Östling, M. Zhang, S.-L. State Key Lab. of ASIC and System School of Microelectronics Fudan University Shanghai China School of Information and Communication Technology Royal Institute of Technology Stockholm Sweden Angstrom Laboratory Uppsala University Uppsala Sweden

ISBN: (纸本)9781424417308

In this paper, dopant segregation (DS) method is adopted to enhance device performance of PtSi-based Schottky-barrier source/drain MOSFETs (SB-MOSFETs) fabricated on ultrathin silicon-on-insulator. The DS formation is realized by means of Suicide As Diffusion Source. Without DS treatment, the devices are typically p-type, but with a rather large electron branch at positive gate bias. Dopant segregation with As is found to turn the devices to well-performing n-MOSFETs, and DS with B to greatly enhance the hole conduction in the p-MOSFETs. A large threshold voltage (Vt) shift is however observed in the p-MOSFET due to B lateral spread caused during the drive-in process for the DS formation. By reducing the drive-in temperature, this problem is partially addressed with a smaller Vt shift and a much better control of short channel effect. © 2008 IEEE.

关键词： Threshold voltage

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Fabrication and transmission characteristic of PDMS plasma photonic crystal

Fabrication and transmission characteristic of PDMS plasma p...

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International Conference on Solid-state and Integrated Circuit Technology

作者： Jinying Zhang Hua Huang Xinming Ji Jia Zhou Yiping Huang ASIC and System State Key Lab School of Microelectronics Fudan University Shanghai China

ISBN: (纸本)9781424421855

Two-dimensional (2-D) polydimethylsiloxane (PDMS) plasma photonic crystal with square lattice structure was fabricated by hydro-casting method using Si-based templates. The transmission characteristic of PDMS plasma photonic crystal was studied by UV-visible spectrophotometer. The results show that the plasma photonic crystal can improve the transmitted rate in visible light range.

关键词： Fabrication Plasma properties Photonic crystals Plasma applications Plasma waves Plasma simulation Testing Lattices Periodic structures Gold

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Enhancement of Endurance for CuxO based RRAM cell

Enhancement of Endurance for CuxO based RRAM cell

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2008 9th International Conference on Solid-state and Integrated-Circuit Technology

作者： M.Yin P.Zhou H.B.Lv T.A.Tang B.A.Chen Y.Y.Lin A.Bao M.H.Chi School of Microelectronics and State Key Lab of ASIC & System Fudan University Memory Technology Development Center Semiconductor Manufacturing International Corp.

For the first time,we report that the copper oxide （CuO） based Resistive Random Access Memory （RRAM） cell can achieve 10～4 cycles（i.e.0x better） as a new record as well as elimination of the initial "forming" than reported in *** Copper oxide is integrated in MTM（metal-insulator-metal） structure and is grown by plasma oxidation of Cu substrate,with CuO near upper surface and graded CuO（i.e. increasingly Cu rich or O-vacancies rich） toward the Cu substrate.A thinner CuO upper layer can eliminate "forming" process and,for in turn,greatly enhance the endurance of resistive switching by eliminating the damage during the "forming" process..

关键词： Enhancement of Endurance for CuxO based RRAM cell

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Enhancement of endurance for CuxO based RRAM cell

Enhancement of endurance for CuxO based RRAM cell

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International Conference on Solid-state and Integrated Circuit Technology

作者： M. Yin P. Zhou H. B. Lv T. A. Tang B.A. Chen Y.Y. Lin A. Bao M. H. Chi School of Microelectronics and State Key Lab of ASIC & System Fudan University Shanghai China Memory Technology Development Center Semiconductor Manufacturing International Corp. Shanghai China

For the first time, we report that the copper oxide (Cu x O) based resistive random access memory (RRAM) cell can achieve 10 4 cycles (i.e. ~10x better) as a new record as well as elimination of the initial ¿forming¿ than reported in literature. The copper oxide is integrated in MIM (metal-insulator-metal) structure and is grown by plasma oxidation of Cu substrate, with CuO near upper surface and graded Cu x O (i.e. increasingly Cu rich or O-vacancies rich) toward the Cu substrate. A thinner CuO upper layer can eliminate ¿forming¿ process and, for in turn, greatly enhance the endurance of resistive switching by eliminating the damage during the ¿forming¿ process.

关键词： Copper Oxidation Plasma applications Substrates Electrodes Deformable models Random access memory Scanning electron microscopy Chemical analysis Spectroscopy

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Improvement of Endurance and Switching Stability of Forming-Free CuxO RRAM

Improvement of Endurance and Switching Stability of Forming-...

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IEEE International Memory Workshop (IMW)

作者： H. B. Lv M. Yin P. Zhou T. A. Tang B. A. Chen Y. Y. Lin A. Bao M. H. Chi School of Microelectronics and State Key Lab of ASIC & System Fudan University Shanghai China Memory Technology Development Center Semiconductor Manufacturing International Corp. Shanghai China

Cu-oxide grown by plasma oxidation is found typically composed of upper CuO layer and inner graded Cu x O. The initial forming process leads to endurance degradation but can be improved by annealing in an oxygen deficient ambient. By using ramped pulse and verification algorithm, the endurance and programming voltage shift are further ameliorated.

关键词： Stability Oxidation Degradation Random access memory CMOS process Plasma measurements Breakdown voltage Microelectronics Application specific integrated circuits Semiconductor device manufacture

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Silicide as diffusion source for dopant segregation in 70-nm MOSFETs with PtSi Schottky-barrier source/drain on ultrathin-body SOI

Silicide as diffusion source for dopant segregation in 70-nm...

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2008 9th International Conference on Ultimate Integration on Silicon (ULIS 2008)

作者： Z. J. Qiu Z. Zhang J. Lu R. Liu M. Ostling S. L. Zhang State Key Lab of ASIC & System Fudan University Shanghai China School of Information and Communication Technology Royal Institute of Technology Stockholm Sweden The Ångström Laboratory Uppsala University Uppsala Sweden

In this paper, dopant segregation (DS) method is adopted to enhance device performance of PtSi-based Schottky-barrier source/drain MOSFETs (SB-MOSFETs) fabricated on ultrathin silicon-on-insulator. The DS formation is realized by means of Silicide As Diffusion Source. Without DS treatment, the devices are typically p-type, but with a rather large electron branch at positive gate bias. Dopant segregation with As is found to turn the devices to well-performing n-MOSFETs, and DS with B to greatly enhance the hole conduction in the p-MOSFETs. A large threshold voltage (V{sub}t) shift is however observed in the p-MOSFET due to B lateral spread caused during the drive-in process for the DS formation. By reducing the drive-in temperature, this problem is partially addressed with a smaller V{sub}t shift and a much better control of short channel effect.

关键词： Schottky-barrier MOSFET Dopant segregation Threshold voltage SADS

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