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2016 13th IEEE International Conference on Solid-state and Integrated Circuit Technology (ICSICT)

作者： Haisheng Qian Guangxi Hu Ran Liu Lirong Zheng Xing Zhou ASIC and System State Key Lab School of Information Science and Technology Fudan University School of Electrical & Electronic Engineering Nanyang Technological University

ISBN: (纸本)9781467397209

An analytical model for threshold voltage of the normally-off Ga N-based fin-shaped field-effect transistor(Fin FET) is obtained. Analytical expressions for the threshold voltage and its roll-off effect are *** design insights can be obtained from the results. The explicit expression for threshold voltage makes the model suitable to be embedded in circuit simulation and design tools.

关键词： VDS A Threshold Voltage Model for GaN-Based Heterostructure-Free Normally-Off FinFET GaN Model

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GAS SENSING CMOS TRANSISTORS BASED on SOI SUBSTRATE 15

GAS SENSING CMOS TRANSISTORS BASED on SOI SUBSTRATE

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15th IEEE International Conference on Solid-state and Integrated Circuit Technology, ICSICT 2020

作者： Xiao, K. Liu, J. Liu, X. Wan, J. State Key Lab of Asic and System School of Information Science and Engineering Fudan University Shanghai China

ISBN: (纸本)9781728162355

In recent years, the development of miniature gas sensors based on silicon technology is being increasingly emphasized. Most of the devices reported are based on micro-hot plates, but the materials they used are not fully compatible with CMOS and are therefore not suitable for massive production and co-integration with CMOS circuit. In addition, extra process steps are needed to form the sensing device and CMOS circuits separately. In this work, we demonstrate novel gas sensor devices directly based on the MOSFET transistors fabricated in the silicon-on-insulator (SOI) substrate. Both n-Type and p-Type devices are demonstrated showing opposite sensing polarity under the exposure to NO2 gas. © 2020 IEEE.

关键词： MOSFET devices

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A 6b 800MS/s SAR ADC With Speed-Enhanced SAR Logic and Grouped DAC Capacitors 16

A 6b 800MS/s SAR ADC With Speed-Enhanced SAR Logic and Group...

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16th IEEE International Conference on Solid-state and Integrated Circuit Technology, ICSICT 2022

作者： Zhang, Yuxuan Zhao, Yutong Lan, Jingchao Ye, Fan Xie, Yufeng Ren, Junyan State Key Lab. of ASIC & System Fudan University Shanghai China School of Microelectronics Fudan University

ISBN: (数字)9781665469067

ISBN: (纸本)9781665469067

This paper presents a 6-bit 800MS/s successive approximation register (SAR) analog-to digital converter (ADC) in 28nm CMOS with grouped digital-to-analog converter (DAC) capacitor array. High-speed operation is achieved by improving the control logic and using custom-designed unit capacitor of comb structure. At 800MS/s sampling rate with Nyquist input, the post simulated SNDR and SFDR are 37.68dB and 50.1dB respectively, and the ADC core consumes 1.82mW from 1V supply, achieving 36.5fJ/conversion-step. © 2022 IEEE.

关键词： Digital to analog conversion

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Automatic design of analog integrated circuit based on multi-objective optimization 15

Automatic design of analog integrated circuit based on multi...

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15th IEEE International Conference on Solid-state and Integrated Circuit Technology, ICSICT 2020

作者： Mao, Wei Wei, Jia-Hao Wan, Jing State Key Lab of Asic and System School of Information Science and Engineering Fudan University Shanghai200433 China

ISBN: (纸本)9781728162355

In this work, we have explored the automatic design of an operational amplifier using multi-objective optimization technique. The design parameters of the circuit, including transistor sizes, bias current and load capacitance, have been optimized by genetic algorithm, in order to achieve the best compromise (Pareto-Front) between performances, such as Gain, cut-off frequency, quiescent current and phase. Optimizations with two and three objectives have been demonstrated successfully. Various population size and optimization algorithms have been used in our work and compared systematically. © 2020 IEEE.

关键词： Analog integrated circuits

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A 16-bit Arithmetic Logic Unit Design by Using Gate Diffusion Input 15

A 16-bit Arithmetic Logic Unit Design by Using Gate Diffusio...

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15th IEEE International Conference on Solid-state and Integrated Circuit Technology, ICSICT 2020

作者： Duanmu, Yihang Yang, Jianguo Li, Jinbao Xue, Xiaoyong Jing, Minge Zeng, Xiaoyang State Key Lab of Asic and System School of Microelectronics Fudan University Shanghai201203 China Zhejiang Lab Hangzhou China

ISBN: (纸本)9781728162355

Gate diffusion input (GDI) is a new technology of digital circuit design for low power. Compared with traditional CMOS technology, GDI technology can reduce the power consumption, the propagation delay and the circuit area. This work uses the GDI technology to build a 16-bit arithmetic logic unit (ALU) to perform logic operations (AND, OR, NAND and XOR), and math operations (addition, subtraction, adding 1 and subtracting 1), and finally compares it with traditional CMOS circuits. © 2020 IEEE.

关键词： Computer circuits

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Quantum mechanical effects on the threshold voltage of the evenly doped surrounding-gate MOSFETs

Quantum mechanical effects on the threshold voltage of the e...

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2011 IEEE 9th International Conference on asic, asicON 2011

作者： Mei, Guanghui Li, Peicheng Hu, Guangxi Liu, Ran Tang, Tingao State Key Lab. of ASIC and System School of Information Science and Technology Fudan University Shanghai 200433 China

ISBN: (纸本)9781612841908

In this work, we investigate analytically quantum mechanical (QM) effects on the threshold voltage (VTH) shift of the surrounding-gate (SG) MOSFETs. We show how VTH is influenced with QM effects with the considerations of (110)-silicon (Si) orientation and (100)-Si orientation. When the radius of an SG MOSFET is small (TH shift will be significant, and one should be careful in the use of a device with an extremely small silicon body radius. The analytical results are compared with those obtained by B. Yu et al., and good agreement is observed. © 2011 IEEE.

关键词： Threshold voltage

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A review on Z2-FET and PISD based on Silicon-on-insulator substrate 2

A review on Z2-FET and PISD based on Silicon-on-insulator su...

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2nd IEEE International Conference on Integrated Circuits, Technologies and Applications, ICTA 2019

作者： Xiao, K. Liu, J. Deng, J.N. Gong, X. Wan, I.J. School of Information Science and Technology State Key Lab of ASIC and System Fudan University China Singapore117576 Singapore

ISBN: (纸本)9781728151670

This paper reviews our recent work on two novel semiconductor devices built on silicon-on-insulator (SOI) substrate. The Z2-FET, which operates with feedback mechanism, has been demonstrated with extremely sharp switching behaviors and gate-controlled hysteresis. It has found applications in high performance memories, electrostatic discharge protection and photodetection. PISD utilizes the substrate of SOI for photon-electron conversion and senses the photoelectron in-situ without need of any additional device. It has been used as one-transistor active pixel sensor (1T-APS) which is more compact than conventional CMOS sensor. © 2019 IEEE.

关键词： Photons

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Effects of unintended dopants on I-V characteristics of the double-gate MOSFETs, a simulation study

Effects of unintended dopants on I-V characteristics of the ...

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2011 IEEE 9th International Conference on asic, asicON 2011

作者： Li, Peicheng Mei, Guanghui Hu, Guangxi Liu, Ran Tang, Tingao State Key Lab. of ASIC and System School of Information Science and Technology Fudan University Shanghai 200433 China

ISBN: (纸本)9781612841908

In this paper, we study the effects of an unintional dopant in the channel on the current-voltage characteristics of a Double Gate (DG) Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET). Non-Equilibrium Green's Function (NEGF) approach is used. A fast and efficient model to calculate the drain current is presented. © 2011 IEEE.

关键词： MOSFET devices

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A 32.5-GS/s two-channel time-interleaved CMOS sampler with switched-source follower based track-and-hold amplifier

A 32.5-GS/s two-channel time-interleaved CMOS sampler with s...

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2014 IEEE MTT-S International Microwave Symposium, IMS 2014

作者： Ma, Shunli Wang, Jiacheng Yu, Hao Ren, Junyan State Key Lab of ASIC and System Fudan University China School of Electrical and Electronic Engineering Nanyang Technological University Singapore

ISBN: (纸本)9781479938698

This paper presents a high speed and low distortion sampler with two-channel time-interleaved sampler with track-and-hold amplifier (THA). The THA is based on switched source-follower with active inductor load such that wide bandwidth in tack-mode and small signal feed-through in hold-mode can be both achieved within compact area. Furthermore, one clock-controlled auxiliary transistor is also introduced to cancel clock feed-through in hold-mode. The chip was fabricated in 65nm RF-CMOS process with core area of 0.07mm2 and power consumption of 192mW. The measured S-parameters show matched input and output up to 40GHz with 19.3GHz bandwidth in track-mode. The measured spurious-free-dynamic-range (SFDR) is 35dB, and total harmonic distortion (THD) is -30dB sampled at 16.26GS/s in one channel. © 2014 IEEE.

关键词： Scattering parameters

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Quantum-Mechanical Study on Surrounding-Gate Metal-Oxide-Semiconductor Field-Effect Transistors

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Communications in Theoretical Physics 2010年第10期 763-767页

作者：胡光喜王伶俐刘冉汤庭鳌仇志军 ASIC & System State Key Lab Platform of Micro/Nano-ElectronicsFudan University School of Microelectronics Fudan University

As the channel length of metal-oxide-semiconductor field-effect transistors （MOSFETs） scales into the nanometer regime, quantum mechanical effects are becoming more and more significant. In this work, a model for the surrounding-gate （SG） nMOSFET is developed. The SchrSdinger equation is solved analytically. Some of the solutions are verified via results obtained from simulations. It is found that the percentage of the electrons with lighter conductivity mass increases as the silicon body radius decreases, or as the gate voltage reduces, or as the temperature decreases. The eentroid of inversion-layer is driven away from the silicon-oxide interface towards the silicon body, therefore the carriers will suffer less scattering from the interface and the electrons effective mobility of the SG nMOSFETs will be enhanced.

关键词： simiconductor devices quantum mechanical effects effective electron mobility

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