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13th International Conference on Microwave and Millimeter Wave technology, ICMMT 2021

作者： He, Qian You, Fei Qian, Ting Xiao, Zehua Guo, Runnan Tao, Hongqi Zhang, Bin Fan, Yaojia University Of Electronic Science And Technology Of China School Of Electronic Science And Engineering Chengdu611731 China Nanjing Electronic Devices Institute Nanjing210016 China Science And Technology On Monolithic Integrated And Modules Laboratory Nanjing210016 China

ISBN: (纸本)9781665434379

This paper presents a two-stage tunable active polyphase filter (PPF) to achieve quadrature signals on 0.7-m InP DHBT technology. The transconductance of transistors and junction capacitance between bases and collectors are introduced in the PPF instead of typical resistors and capacitors. The transconductance and junction capacitance can be flexibly adjusted according to the bias condition. The schematic simulated results show a phase error of 2 degrees and an insertion loss of 3dB between 20-30 GHz. The layout simulated results demonstrate that the low phase error of 3 degrees in the broader frequency range by changing the bias voltage. © 2021 IEEE.

关键词： Transconductance

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Microfluidic Silicon Interposer for Thermal Management of Gan Device Integration

SSRN

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SSRN 2022年

作者： Yu, Miao Zhang, Hao Huang, Min Zhang, Hongze Zhu, Jian School of Electronic Science and Engineering Nanjing University Nanjing21002 China Nanjing Electronic Devices Institute Nanjing210016 China Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing210016 China

The cooling capability of the silicon interposers (SIs) with microjet and microchannel cooling for GaN device has been validated by practical implementations and characterized by numerical analysis in this work. A 5.3 mm × 3.5 mm × 0.08 mm GaN power amplifier (PA) with heating power of ~ 100 W integrated on SI is applied to evaluate the cooling performance of both microfluidic cooling configurations. The maximum hotspot power density of the GaN chip achieves 336.0 ~ 340.5 W/mm 2 , and the average chip power density is 539.0 ~ 546.3 W/cm 2 in the experiments. The SI is integrated with the GaN chip and micro-assembled in a test cube. The surface temperature distributions of the GaN chip are measured with different flow rate at 70 ℃ ambient temperature, and the overall thermal resistance with microjet cooling has 7.11 ~ 7.72 % reduction and its heat transfer coefficient (HTC) increases 12.3 ~ 28.3 % comparing to that with microchannel cooling at the pumping power of 0.5 ~ 1.5 W. The material properties of GaN chip and SI are extracted from the measurement results and support the analysis of the thermal and hydraulic properties of both microfluidic SIs numerically. Their cooling performance and efficiency are evaluated and compared based on the performance evaluation criteria (PEC), field synergy number and entropy generation rate. According to the evaluation results, while the PEC of microjet and microchannel SIs increases with the pumping power, the microjet SI can contribute to the enhancement of the synergetic relation between the flow and temperature fields and reduction of total irreversibility in heat transfer process comparing to the microchannel SI in pursuit of low overall thermal resistance. The field synergy number can improve 90.40 % and the argument entropy generation rate can be 0.376 when the overall thermal resistance is 1.35 K/W. © 2022, The Authors. All rights reserved.

关键词： Gallium nitride

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A High-Speed Level Shifter with dVs/dt Noise Immunity Enhancement Structure for 200V monolithic GaN Power IC

A High-Speed Level Shifter with dVs/dt Noise Immunity Enhanc...

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International Symposium on Power Semiconductor Devices and Ics (ISPSD)

作者： Yifei Zheng Qing Yuan Deyuan Song Yutao Ying Jing Zhu Weifeng Sun Long Zhang Sheng Li Denggui Wang Jianjun Zhou Sen Zhang Nailong He National ASIC System Engineering Research Center Southeast University Nanjing China Wuxi Chipown Micro-electronics limited Wuxi China Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute Nanjing China Technology development department CSMC Technologies Corporation Wuxi China

monolithic integration has been demonstrated to be an ideal solution to minimize the parasitics in GaN power IC. Nonetheless, the current commercially GaN process for power IC is far less mature and only n-type HEMTs are available. Therefore, it is difficult for high voltage level shifters to achieve high speed. This work implements a level shifter for GaN IC to achieve both small response time and high $\mathrm{d}V_{\mathrm{S}}/\text{dt}$ noise immunity without complicated signal processing circuits, thus delay and conduction loss will be minimized. The proposed circuit was fabricated in a $1\mu\mathrm{m}$ GaN-on-Silicon process and measured results were performed to verify the characteristics.

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11THz GaAs Terahertz Schottky Barrier Diode with Sub 0.5 fF C mathrm{j}0} 13

11THz GaAs Terahertz Schottky Barrier Diode with Sub 0.5 fF ...

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13th UK-Europe-China Workshop on Millimetre-Waves and Terahertz Technologies, UCMMT 2020

作者： Niu, Bin Fan, Daoyu Lin, Gang Dai, Kunpeng Lu, Hai-Yan Chen, Tangsheng Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute Nanjing Chip Valley Industrial Technology Institute Nanjing210016 China

ISBN: (纸本)9781728190648

GaAs terahertz schottky barrier diode SBD has been a major technology in terahertz wave multiplexing, mixing and direct detection for decades, due to its high mobility and low capacity. In this paper, T-Anode GaAs terahertz SBD was presented with its C{\mathrm{j}0} scaled into sub-fF range. Scalling C-V measurement showed C{\mathrm{j}0} without parasitic capacity reached 0.476fF for the 0.5\mu\mathrm{m} anode diameter device. With the relative low series resistance Rs of 28.8\mathrm{\Omega}, cutoff frequency f{\mathrm{t}} reached 11.6THz. The whole process was based on 4 inch GaAs wafer, guarantee stability and conformity in terahertz GaAs SBD integrated circuits working over 1THz. © 2020 IEEE.

关键词： Schottky barrier diodes

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System Design of Ultra-High Speed Large-Bandwidth CT $\sum\Delta$ Modulator

System Design of Ultra-High Speed Large-Bandwidth CT $\sum\D...

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International Conference on Microwave and Millimeter Wave technology Proceedings

作者： Kun Liu Yaqin Liu Yuhang Zhuang Yufeng Guo Youtao Zhang Xiaopeng Li Yi Zhang College of Integrated Circuit Science and Engineering Nanjing University of Posts and Telecommunications Nanjing China Nanjing GuoBo Electronics Co. Ltd Nanjing China Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing China State Key Laboratory of Millimeter Waves Nanjing China

ISBN: (纸本)9781665482271

This paper presents system design of an ultra-high speed continuous-time (CT) Sigma-Delta $(\Sigma\Delta)$ modulator in MATLAB/SIMULINK. With the help of Toolbox, zero-pole analysis and parameter optimization were carried out for the modulator, followed by the behavior-level simulation of the ideal modulator system. Based on this, the non-ideal factors, including: gain-bandwidth (GBW), clock-jitter, RC-tolerance and excess-loop-delay, are modeled and simulated in the modulator system. The simulation results show that the modulator is suitable for a CT $\Sigma\Delta$ ADC with resolution of 7 -bit, sampling frequency of 10GS/s and signal bandwidth is larger than 300MHz, also lay a foundation for the subsequent circuit design.

关键词： Sigma-delta modulation Microwave integrated circuits Frequency modulation Simulation Bandwidth Millimeter wave integrated circuits integrated circuit modeling

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Threshold Voltage Stability Enhancing technology for p-GaN HEMTs Using Hybrid Gate Structure

IEEE Electron Device Letters

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IEEE Electron Device Letters 2022年 1-1页

作者： Zhang, Chi Li, Mingfei Li, Sheng Liu, Siyang Wang, Denggui Lu, Weihao Ma, Yanfeng Liu, Mengli Wei, Jiaxing Zhang, Long Zhou, Jianjun Bai, Song Sun, Weifeng National ASIC System Engineering Research Centre Southeast University Nanjing China Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute Nanjing China State Key Laboratory of Wide-Bandgap Semiconductor Power Electronic Devices Nanjing Electronic Devices Institute Nanjing China

A novel hybrid gate p-GaN power high-electron mobility transistor (Hyb-HEMT) technology is proposed in this work to effectively enhance threshold voltage (Vth) stability without significant gate leakage current (Igss) degradation. In this device concept, gate structure consists of spaced ohmic-type p-GaN metal dots and Schottky-type p-GaN metal. Charge storage effect can be alleviated through a free-carrier “discharge path” induced by ohmic-type p-GaN region, thus enhancing the Vth stability. The surrounding geometry distribution of Schottky-type p-GaN metal can take full advantage of depletion region, ensuring a relatively low Igss. It is experimentally demonstrated that hybrid gate structure can successfully suppress Vth shift within only 0.03V under 1200s DC drain/gate bias stress and the activation energy (EA) of proposed Hyb-HEMT is only 0.59eV, which indicates Hyb-HEMT owns shallower traps, leading to easier discharge of the induced stored charges. Meanwhile, experimental results and the mix-mode simulation prove that no carrier injection or trapping effect occurs in p-GaN layer after repetitive reverse freewheeling stress for the Hyb-HEMT device. IEEE

关键词： Threshold voltage

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A 14-22GHz monolithic Double-Balanced Passive Mixer

A 14-22GHz Monolithic Double-Balanced Passive Mixer

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International Conference on Microwave and Millimeter Wave technology Proceedings

作者： Hu Zhang Lei Yang Sai sai Jing Yufeng Guo Hao Gao Yi Zhang College of Integrated Circuit Science and Engineering Nanjing University of Posts and Telecommunications Nanjing China Nanjing GuoBo Electronics Co. Ltd Nanjing China Silicon Austria Labs Linz Austria Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing China State Key Laboratory of Millimeter Waves Nanjing China

ISBN: (纸本)9781665482271

In this paper, a passive double-balanced mixer operating at 14-22GHz is designed based on the $0.15_{5}\mathrm{m}$ pHEMT GaAs process provided by WIN Semiconductor. The RF/LO frequency of the mixer is 14GHz-22GHz, and the IF frequency range is DC-4GHz. The ring-shaped mixing ring is composed of four MOS transistors connected with drain and source, and the RF and LO ports are spiral Marchand balun. The simulation results show that when the LO power is 13dBm, the frequency conversion loss is about 10dB, the isolation of LO/RF port and LO/IF port are both greater than 30dB, and that of RF/IF port is greater than 20dB. Chip size is $1.5 \text{mm}\times 0.9\text{mm}$ .

关键词： Resistors Radio frequency MOSFET Spirals Baluns Simulation PHEMTs

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A 17–26.5 GHz 42.5 dBm broadband and highly efficient gallium nitride power amplifier design

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Frontiers of Information technology & Electronic Engineering 2022年第2期23卷 346-350页

作者： Ming LI Zhiqun LI Quan ZHENG Lanfeng LIN Hongqi TAO Institute of RF-&OE-ICs Southeast UniversityNanjing 210096China Science and Technology on Monolithic Integrated and Modules Laboratory Nanjing Electronic Devices InstituteNanjing 210016China Engineering Research Center of RF-ICs and RF-Systems Ministry of EducationNanjing 210096China

A gallium nitride(GaN)power amplifier monolithic microwave integrated circuit(MMIC)with a wide band and high efficiency in the microwave frequency band is proposed in this *** power amplifier MMIC uses a 0.15^im GaN high electron mo-bility transistor(HEMT)*** operating frequency band of the amplifier can cover the whole K-band,i.e.,17-26.5 GHz.

关键词： amplifier power MMIC

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Vertical Field-Plated NiO/Ga2O3 Heterojunction Power Diodes

Vertical Field-Plated NiO/Ga2O3 Heterojunction Power Diodes

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IEEE Electron Devices technology and Manufacturing Conference (EDTM)

作者： Hehe Gong Xinxin Yu Yang Xu Jianjun Zhou Fangfang Ren Shulin Gu Rong Zhang Jiandong Ye School of Electronic Science and Engineering Nanjing University Nanjing China Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute Nanjing China

In this work, vertical NiO/Ga2O3 heterojunction diodes (HJDs) have been demonstrated with the integrated SiNx/Al2O3 double-layered insulating field plate (FP) structure. With the optimal post annealing, the device per... 详细信息

In this work, vertical NiO/Ga₂O₃ heterojunction diodes (HJDs) have been demonstrated with the integrated SiN_x/Al₂O₃ double-layered insulating field plate (FP) structure. With the optimal post annealing, the device performance has been improved with a decreased differential specific on-resistance (R_on,sp), a decreased reverse leakage current density and the elimination of double barrier behavior in forward bias condition, which is due to the reduced interface defects produced by the plasma damage of fabricated process. Our work provides an optimized way for the heterojunction devices based on Ga₂O₃ material to solve the difficulty of p-type Ga₂O₃.

关键词： Performance evaluation Fabrication Electric potential Annealing Heterojunctions Plasmas Leakage currents

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A Fully integrated Front-End MMIC Based on GaN Doherty Power Amplifier for Mm-Wave 5G

A Fully Integrated Front-End MMIC Based on GaN Doherty Power...

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International Conference on Microwave and Millimeter Wave technology Proceedings

作者： Runnan Guo Chenrui Peng Hao Liu Yingfan Feng Zheng Yin Hongqi Tao Nanjing Electronic Devices Institute Nanjing China China Electronics Technology Group Corporation Academy of Electronics and Information Technology Beijing China Science and Technology on Monolithic Integrated and Modules Laboratory Nanjing China

ISBN: (纸本)9781665482271

A 26 GHz GaN Doherty amplifier MMIC with high 8dB back-off efficiency and simplified load modulation network, and a fully integrated RF front-end MMIC based on this Doherty PA are reported in this paper for mm-wave 5G application. The individual Doherty PA achieves up to 34% and 27% PAE at saturated and 8dB back-off respectively. And in the RF front-end MMIC, there are still PAE of 26%@Sat. and 24.7%@8dB-back-off PAE. The whole RF front-end MMIC could provide more than 35dBm peak output power for transmit, and 18dB linear gain, 3.6dB noise figure for receive in $24\sim 28\text{GHz}$ . The chip sizes of Doherty PA and front-end MMIC are $3.0\text{mm}\times 1.6\text{mm}$ and $3.0\text{mm} \times 2.4\text{mm}$ .

关键词： Radio frequency Noise figure Microwave integrated circuits 5G mobile communication Millimeter wave technology Power amplifiers Modulation

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