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12-bit 2.6 GS/s RF DAC based on return-to-zero technology

The Journal of China Universities of Posts and Telecommunications 2019年第4期26卷 36-42页

作者： Li Xiaopeng Wang Zhigong Zhang Yi Zhang Youtao Zhang Mi Institute of RF and OE ICs Southeast UniversityNanjing 210096China Nanjing Guobo Electronics Company Limited Nanjing 210016China Nanjing Electronic Devices Institute Nanjing 210016China National and Local Joint Engineering Laboratory of RF Integration and Micro-assembly Technology Nanjing 210046China College of Microelectronics Nanjing University of Posts and TelecommunicationsNanjing 210046China State Key Laboratory of Millimeter Waves Southeast UniversityNanjing 210096China Science and Technology on Monolithic Intergrated Circuits and Modules Laboratory Nanjing 210016China

A 12-bit 2.6 GS/s radio frequency digital to analog converter(RF DAC)based on 1 um GaAs heterojunction bipolar transistor(HBT)process is *** DAC integrates a 4:1 multiplexer to reduce the data rate of input ports,which greatly facilitates the *** core adopts 4+8 segmented current steering structure.R-2R ladder network is used for 8 least significant bit(LSB)to realize binary current weighting and thermometer coding is used for 4 most significant bit(MSB).Return-to-zero(RZ)technology is used to expand the effective bandwidth of DAC output to the third Nyquist *** proposed DAC has a better output power flatness and spurious-free dynamic range(SFDR).Compared to traditional DAC,measured results demonstrate that the output power of this RZ DAC is increased by 33 dB and the SFDR is enhanced by 27 dB near the second Nyquist band.

关键词： DAC RZ Nyquist band

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A 18-40GHz 10W GaN Power Amplifier MMIC Utilizing Combination of the Distributed and Reactive Matching Topology

A 18-40GHz 10W GaN Power Amplifier MMIC Utilizing Combinatio...

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European (Formerly European Gallium Arsenide and Other Semiconductors Application Symposium - EGASS) Microwave integrated Circuit Conference (EuMIC)

作者： Cheng-Hao Han Hong-Qi Tao Science and Technology on Monolithic integrated and modules Laboratory Nanjing Electronic Devices Institute Nanjing P.R. China

This paper describes the design and measured performance of a 18-40GHz 10W power amplifier (PA) MMIC utilizing combination of the distributed and reactive matching topology fabricated with an advanced 0.15μm Gallium Nitride (GaN) HEMT technology process. At the output stage of the power amplifier, reactive matching is used for better output power and power added efficient (PAE) design. To increase the gain and optimize the input return loss, distributed amplifier has been adopted at the input stage. The power amplifier MMIC demonstrates 10-18 W output power, over 12dB power gain and PAE of 15-27% over 18-40 GHz band under 20V drain bias. The chip is compact with the size of 3.2×2.8 mm 2 and it delivers an average output power density 1.52 W/mm 2 over the chip area. To the best of our knowledge, the pout, PAE and power density are highest among the published work for K/Ka-band PA MMICs.

关键词： Power amplifiers Power generation Gallium nitride Topology Wideband Gain Impedance

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Design of 26-40 GHz 17 W GaN-based Balanced Power Amplifier MMIC

Design of 26-40 GHz 17 W GaN-based Balanced Power Amplifier ...

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International Conference on Microwave and Millimeter Wave technology Proceedings

作者： Hong-Qi Tao Bin Zhang Qiang Zhou Jun-Da Yan Science and Technology on Monolithic Integrated and Modules Laboratory Nanjing Electronic Devices Institute Nanjing P.R. China

A wideband 26-40 GHz 17 W GaN power amplifier (PA) utilizing 0.15 μm gallium nitride (GaN) high electron mobility transistor (HEMT) technology is presented in this letter. The MMIC is designed with balanced architecture to achieve low input/output return loss and reduce the load-pull effect on the performance degradation. A novel design method of optimizing load impedance of the Lange Coupler is presented, which solved the conflict between microwave performance and process design rules. The MMIC is designed with the load-pull method, with the final stage matched to compromise between output power and power added efficiency (PAE). An output power of more than 42 dBm and a power added efficiency of more than 15% over the band of 26-40 GHz under a drain voltage of 20 V at CW mode have been achieved. The chip size is 3.5 mm ×5.3 mm (18.55 mm 2 ).

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9/15GHz dual-band GaN monolithic power amplifier

9/15GHz dual-band GaN monolithic power amplifier

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2018 IEEE MTT-S International Wireless Symposium, IWS 2018

作者： Wang, Jiawen Tao, Hongqi Nanjing Electronic Devices Institute Nanjing210016 China Science and Technology on Monolithic Integrated and Modules Laboratory Nanjing210016 China

ISBN: (纸本)9781538663462

This paper presents design and measurements of a 9/15 GHz dual-band monolithic power amplifier implemented in Nanjing Electronic Devices Institute's (NEDI's) 0.25-μm GaN on SiC HEMT process. Two second harmonic control branches were adopted in the design of inter-stage matching net-work(ISMN) to increase the efficiency of power amplifier. Large signal measurements exhibit saturated output power of 42dBm and 41.8dBm, and power added efficiency(PAE) of 40% and 35% at 9GHz and 15GHz in pulsed mode, respectively. © 2018 IEEE.

关键词： monolithic microwave integrated circuits

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A 26 GHz Doherty power amplifier and a fully integrated 2×2 PA in 0.15μm GaN HEMT process for heterogeneous integration and 5G

A 26 GHz Doherty power amplifier and a fully integrated 2×2...

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2018 IEEE MTT-S International Wireless Symposium, IWS 2018

作者： Guo, Runnan Tao, Hongqi Zhang, Bin Nanjing Electronic Devices Institute Nanjing210016 China Science and Technology on Monolithic Integrated and Modules Laboratory Nanjing210016 China

ISBN: (纸本)9781538663462

A 26 GHz Doherty power amplifier MMIC and a fully integrated 2×2 PA array based on the DPA are presented in this paper. The Doherty power amplifier using 0.15μm GaN HEMT technology, achieves maximum small signal gain of 13.6 dB and saturated output power of over 32 dBm in 24-28 GHz, with peak PAE of 21.7%, and 6 dB back-off PAE of 20% at 26 GHz. The 2×2 power MMIC consists of 4 symmetric proposed Doherty PAs with signal interconnections on the backside and specialized optimizations of layouts for 3D heterogeneous integration technology, which is suitable for 5G Massive MIMO applications. The chip size of single Doherty power amplifier and monolithic power amplifier array are 2.5 × 2.0 mm2 and 5.0 × 5.0 mm2 respectively. © 2018 IEEE.

关键词： monolithic microwave integrated circuits

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A 220 GHz dynamic frequency divider in 0.5μm InP DHBT technology

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Journal of Semiconductors 2017年第5期38卷 82-87页

作者： Wei Cheng Youtao Zhang Yuan Wang Bin Niu Haiyan Lu Long Chang Junling Xie Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute

A high performance 3 inch 0.5 μm InP DHBT technology with three interconnecting layers has been *** epitaxial layer structure and geometry parameters of the device were carefully studied to get the required *** 0.5 × 5 μm^2 InP DHBTs demonstrated ft = 350 GHz,f（max） = 532 GHz and BV（CEO） = 4.8 V,which were modeled using Agilent-IIBT large signal *** a benchmark circuit,a dynamic frequency divider operating from 110 to 220 GHz has been designed,fabricated and measured with this *** ultra-high-speed 0.5 μm InP DHBT technology offers a combination of ultra-high-speed and high breakdown voltage,which makes it an ideal candidate for next generation 100 GHz＋ mixed signal integrated circuits.

关键词： InP heterojunction bipolar transistor dynamic frequency divider

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Design of a high linearity power amplifier in GaN HEMT technology

Design of a high linearity power amplifier in GaN HEMT techn...

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2018 IEEE MTT-S International Wireless Symposium, IWS 2018

作者： Zhao, Yinghong Xue, Yu Qian, Feng Zheng, Weibin Nanjing Electronic Devices Institute Nanjing210016 China Science and Technology on Monolithic Integrated and Modules Laboratory Nanjing Electronic Devices Institute Nanjing210016 China

ISBN: (纸本)9781538663462

A 37.5dBm high-linearity power amplifier working in Ku band is presented. This power amplifier is fabricated in a 0.25μm gate process with GaN high electron mobility transistor. To improve the linearity characterization, two circuits were designed with different output matching network. The first one is matched to the optimum load for PAE characterization while the second is matched to the optimum load for linearity characterization which is quantized by IM3. Measured results indicate that the largest output power is up to 37.5dBm and the best PAE can get up to 36%. Measured linearity results of the two circuits are also presented. PAE of the second circuit is 2∼4 lower than first one while linearity is 1∼2dBc up than the first one. The results show that output matching network can be matched close to the optimum load for linearity characterization in order to get higher linearity. © 2018 IEEE.

关键词： High electron mobility transistors

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A Broad-Band 1:4 Static Frequency Divider MMIC in InPHBT

A Broad-Band 1:4 Static Frequency Divider MMIC in InPHBT

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International Conference on integrated circuits and Microsystems (ICICM)

作者： Min Zhang Qiao Meng Youtao Zhang Xiaopeng Li Yi Zhang Wei Cheng Institute of RF-&-OE ICs Southeast University Nanjing China Nanjing GuoBo Electronics Co. Ltd Nanjing China National and Local Joint Engineering Laboratory of RF integration & Micro-Assembly Technology Nanjing China Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing China

This paper design and realize a broad-band 1:4 static frequency divider MMIC in 0.7$\mu$m InGaAs/InP DHBT technology. It is realized in a complete circuit structure and can be directly used in high precision instruments and relative systems to replace divide modules. Test results show that it can operate from 1GHz to 48GHz with sine-wave input. The input power dynamic range is from -10 to 10 dBm during the whole bandwidth. The output power is all above 0dBm and the SSB phase noise is -141.15dBc/Hz at 24GHz input.

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A 1.9-kV/2.61-m${\text{m}}\Omega\cdot$ cm2 Lateral GaN Schottky Barrier Diode on Silicon Substrate With Tungsten Anode and Low Turn-ON Voltage of 0.35 V

IEEE Electron Device Letters

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IEEE Electron Device Letters 2018年第10期39卷 1548-1551页

作者： Tao Zhang Jincheng Zhang Hong Zhou Tangsheng Chen Kai Zhang Zhuangzhuang Hu Zhaoke Bian Kui Dang Yi Wang Li Zhang Jing Ning Peijun Ma Yue Hao Key Laboratory of Wide Band Gap Semiconductor Materials and Devices School of Microelectronics Xidian University Xi’an China Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute Nanjing China

In this letter, we report the achievement of a high-performance lateral GaN Schottky barrier diode (SBD) on a silicon substrate with a low turn-ON voltage (V ON ) of 0.35 V and tungsten (W) as the anode. Non-field-plated lateral GaN SBDs with the anode-cathode distances (L AC ) of 6, 10, 15, 20, and 25 μm demonstrate the reverse breakdown voltages of 0.6, 1.1, 1.25, 1.5, and 1.9 kV with the differential specific ON-resistances (R ON , sp ) of 0.38, 0.72, 1.23, 1.87, and 2.61 mΩ·cm 2 , respectively. The power figure-of-merit (FOM) is calculated to be 1×10 3 , 1.7×10 3 , 1.3×10 3 , 1.2×10 3 , and 1.4×10 3 MW/cm 2 . To the best of our knowledge, this FOM of 1.7×10 3 MW/cm 2 is the highest among all the lateral GaN SBDs on a Si substrate. Combined with the ~10 8 current ON/OFF ratio at room temperature, the GaN SBD with the W anode shows a great promise for next-generation power electronics.

关键词： Gallium nitride Anodes Current density Silicon Wide band gap semiconductors Aluminum gallium nitride Schottky barriers

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W-band AlGaN/GaN MMIC PA with 3.1W output power 14

W-band AlGaN/GaN MMIC PA with 3.1W output power

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14th China International Forum on Solid State Lighting: International Forum on Wide Bandgap Semiconductors China, SSLChina: IFWS 2017

作者： Shaobing, Wu Fangjin, Guo Jianfeng, Gao Weibo, Wang Zhonghui, Li Nianning, Huang Tangsheng, Chen Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute East Zhongshan Road Nanjing China

ISBN: (纸本)9781538648513

A balanced four-stage W-band GaN MMIC PA with Lange couplers and micro-strips matching elements is reported. Electron-beam lithography has been used to produce a 100 nm T-shaped gate on the AlGaN/GaN HEMT structure with ultrahigh aluminum content. The MMIC PA offers a small signal gain of greater than 18 dB and an output power of greater than 2.5W from 88GHz to 93GHz with an associated power gain of greater than 15 dB. Moreover, it achieves a peak output power of 3.1W (34.9dBm) at 91GHz in continuous-wave mode, with an associated power density of 3.23W/mm. Most notably, it is the first time that the peak output power and power density exceed 3W and 3W/mm in AlGaN/GaN HEMT at W-band simultaneously. © 2017 IEEE.

关键词： Electron beam lithography

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