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Proton induced radiation effect of SiC MOSFET under different bias

Chinese Physics B 2023年第10期32卷 708-715页

作者：张鸿郭红霞雷志锋彭超马武英王迪孙常皓张凤祁张战刚杨业吕伟王忠明钟向丽欧阳晓平 School of Material Science and Engineering Xiangtan UniversityXiangtan 411105China Science and Technology on Reliability Physics and Application of Electronic Component Laboratory Electronic Product Reliability and Environmental Testing Research InstituteGuangzhou 510610China Northwest Institute of Nuclear Technology Xi'an 710024China

Radiation effects of silicon carbide metal–oxide–semiconductor field-effect transistors(SiC MOSFETs)induced by 20 MeV proton under drain bias(V_(D)=800 V,V_(G)=0 V),gate bias(V_(D)=0 V,V_(G)=10 V),turn-on bias(V_(D)=0.5 V,V_(G)=4 V)and static bias(V_(D)=0 V,V_(G)=0 V)are *** drain current of SiC MOSFET under turn-on bias increases linearly with the increase of proton fluence during the proton *** the cumulative proton fluence reaches 2×10^(11)p·cm^(-2),the threshold voltage of SiC MOSFETs with four bias conditions shifts to the left,and the degradation of electrical characteristics of SiC MOSFETs with gate bias is the most *** the deep level transient spectrum test,it is found that the defect energy level of SiC MOSFET is mainly the ON2(E_(c)-1.1 eV)defect center,and the defect concentration and defect capture cross section of SiC MOSFET with proton radiation under gate bias increase *** comparing the degradation of SiC MOSFET under proton cumulative irradiation,equivalent 1 MeV neutron irradiation and gamma irradiation,and combining with the defect change of SiC MOSFET under gamma irradiation and the non-ionizing energy loss induced by equivalent 1 MeV neutron in SiC MOSFET,the degradation of SiC MOSFET induced by proton is mainly caused by ionizing radiation *** results of TCAD analysis show that the ionizing radiation damage of SiC MOSFET is affected by the intensity and direction of the electric field in the oxide layer and epitaxial layer.

关键词： proton silicon carbide metal–oxide–semiconductor field-effect transistor(SiC MOSFET) degradation defect ionization radiation damage

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Electromagnetically-induced-absorption-like ground state cooling in a hybrid optomechanical system

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Chinese Physics B 2025年第4期34卷 413-421页

作者： Yaoyong Dong Xuejun Zheng Denglong Wang Peng Zhao School of Electromechanical Engineering Guangdong University of TechnologyGuangzhou 510003China School of Mechanical Engineering and Mechanics Xiangtan UniversityXiangtan 411105China School of Physics and Optoelectronics Xiangtan UniversityXiangtan 411105China Science and Technology on Reliability Physics and Application of Electronic Component Laboratory China Electronic Product Reliability and Environmental Testing Research InstituteGuangzhou 510610China

We present a scheme for the electromagnetically-induced-absorption(EIA)-like ground state cooling in a hybrid optomechanical system which is combined by two-level quantum systems(qubits)and a high-Q optomechanical *** the weak qubit-cavity coupling,the system exhibits an EIA-like effect and this effect is caused by quantum destructive interference that is distinct from the conventional EIA effect driven by quantum constructive *** importantly,the EIA-like cooling mechanism can significantly enhance the cooling rate of the hybrid system,enabling the final phonon number beyond the classical cooling limit in the strong optomechanical coupling ***,the cooling effects of the EIA case is better than that of the normalmode splitting case under the same optomechanical coupling strength and qubit dissipation rate.

关键词： electromagnetically induced absorption ground state cooling optomechanics

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0.58 mΩs·cm2/523 v GaN Vertical Schottky Barrier Diode with 15.6 kA/cm2Surge Current Enabled by Laser Lift-Off/ Annealing and N-Ion Implantation

IEEE Electron Device Letters

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IEEE Electron Device Letters 2024年第6期45卷 964-967页

作者： Qi, Wei Zhou, Feng Ma, Teng Xu, Weizong Zhou, Dong Ren, Fangfang Chen, Dunjun Zhang, Rong Zheng, Youdou Lu, Hai Nanjing University School of Electronic Science and Engineering Nanjing210093 China China Electronic Product Reliability and Environmental Testing Research Institute Science and Technology on Reliability Physics and Application of Electronic Component Laboratory Guangzhou511370 China

Achieving high-performance fully-vertical GaN devices on low-cost and large-scale foreign substrates are highly attractive for the development of device technology. In this work, by performing pulsed laser lift-off and laser annealing techniques, high-performance fully-vertical GaN Schottky barrier diodes (SBDs) with superior N-face ohmic contact characteristics are demonstrated. The resulting device exhibits low specific contact resistivity of 3.51×10-5Ω · cm2 and differential specific on-resistance of 0.58 mΩ· cm2, as well as intact anode Schottky contact. In particular, this device demonstrates robust electrothermal robustness, such as the largest surge current density of 15.6 kA/cm2 to date. Moreover, by implementing N-implanted termination, the breakdown voltage of the device is remarkably enhanced from 240 to 523 V, which is competitive with the state-of-the-art quasi-vertical SBDs. These results reveal the notable potential of pulsed laser lift-off/annealing combined with N-implanted termination for realizing fully-vertical devices. © 1980-2012 IEEE.

关键词： Anodes

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Discussion on the reliability Work of Future Combat Aircraft under Aircraft/Engine Integrated Design 14

Discussion on the Reliability Work of Future Combat Aircraft...

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14th International Conference on reliability, Maintainability and Safety, ICRMS 2023

作者： Ding, Yu Li, Tianhao Institute of Reliability Engineering Beihang University Science and Technology The Reliability and Environmental Engineering Laboratory China Beijing China

ISBN: (纸本)9798350329988

Traditional independent methods of aircraft and engine design can no longer meet the mission requirements of future aircraft, including high maneuverability, high energy, large airspace, and wide speed range. To achieve optimal matching between aircraft and engine and promote full play to the maximum performance potential of aircraft and engines, aircraft-engine integration designs are essential. Therefore, considering the highly coupled structure, complex control logic, and dramatic increase in energy and heat dissipation requirements under the integration design to ensure a high mission success rate, corresponding reliability analysis work and reliability level improvement of the whole aircraft are necessary. In this paper, the characteristics of work, structure, environment, and other aspects of aircraft-engine integrated design are initially considered, and the steps to conduct reliability work are discussed. © 2023 IEEE.

关键词： reliability analysis

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Experiment and simulation on degradation and burnout mechanisms of SiC MOSFET under heavy ion irradiation

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Chinese Physics B 2023年第2期32卷 525-534页

作者：张鸿郭红霞雷志锋彭超张战刚陈资文孙常皓何玉娟张凤祁潘霄宇钟向丽欧阳晓平 School of Material Science and Engineering Xiangtan UniversityXiangtan 411105China Science and Technology on Reliability Physics and Application of Electronic Component Laboratory China Electronic Product Reliability and Environmental Testing Research InstituteGuangzhou 510610China Northwest Institute of Nuclear Technology Xi'an 710024China

Experiments and simulation studies on 283 MeV I ion induced single event effects of silicon carbide(SiC) metal–oxide–semiconductor field-effect transistors(MOSFETs) were carried out. When the cumulative irradiation fluence of the SiC MOSFET reached 5×10^(6)ion·cm^(-2), the drain–gate channel current increased under 200 V drain voltage, the drain–gate channel current and the drain–source channel current increased under 350 V drain voltage. The device occurred single event burnout under 800 V drain voltage, resulting in a complete loss of breakdown voltage. Combined with emission microscope, scanning electron microscope and focused ion beam analysis, the device with increased drain–gate channel current and drain–source channel current was found to have drain–gate channel current leakage point and local source metal melt, and the device with single event burnout was found to have local melting of its gate, source, epitaxial layer and substrate. Combining with Monte Carlo simulation and TCAD electrothermal simulation, it was found that the initial area of single event burnout might occur at the source–gate corner or the substrate–epitaxial interface, electric field and current density both affected the lattice temperature peak. The excessive lattice temperature during the irradiation process appeared at the local source contact, which led to the drain–source channel damage. And the excessive electric field appeared in the gate oxide layer, resulting in drain–gate channel damage.

关键词： heavy ion silicon carbide metal–oxide–semiconductor field-effect transistors(SiC MOSFET) drain–gate channel drain–source channel single event burnout TCAD simulation

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Acquisition Method of Time–Frequency Distribution Based on Short-Time Fractional Fourier Transform 2nd

Acquisition Method of Time–Frequency Distribution Based on ...

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2nd International Conference of Mechanical System Dynamics, ICMSD 2023

作者： Gao, Bo Zhang, Zhong Wang, Ben Science and Technology on Reliability and Environmental Engineering Laboratory Beijing Institute of Structure and Environment Engineering Beijing100076 China

ISBN: (纸本)9789819980475

With people's attention to the non-stationary characteristics of signals, the traditional frequency domain analysis methods cannot meet the needs of non-stationary signal processing. Therefore, the time–frequency analysis method for non-stationary signals has attracted more and more attention. In this paper, in view of the demand for non-stationary signal time frequency processing, the method of fractional Fourier transform is improved, and a method of obtaining time frequency distribution with high time frequency resolution is obtained, that is, short-time fractional Fourier transform. Based on the detailed description of the calculation steps of this method, it is proved that this method has certain advantages in time frequency resolution and anti-noise interference by comparing with the short-time Fourier trans for method. © The Author(s), under exclusive license to Springer Nature Singapore Pte Ltd. 2024.

关键词： Frequency domain analysis

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Research on Knowledge Representation Methods for Fire Incidents Based on Knowledge Graphs 5

Research on Knowledge Representation Methods for Fire Incide...

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5th International Conference on System reliability and Safety engineering, SRSE 2023

作者： Chu, Qiaohui Chen, Ying Beihang University Science and Technology on Reliability and Environmental Engineering Laboratory Beijing China

ISBN: (纸本)9798350305944

Sudden fire incidents have become one of the most frequent and common major disasters that threaten public safety and social development. The data released by authorities is mostly represented in text form, which provides limited and unclear descriptions of emergency response procedures. The low level of data structuring results in some data being unable to be effectively transformed into valuable information for reuse, leading to the wastage of data resources and hindering further processing as well as subsequent applications of case event information. In order to structure and process fire incident information, and enhance the value of information utilization for assisting decision-making, we focus on the fire incident data recorded in a state in the United States as the case data. Considering the characteristics of fire incident data, knowledge representation learning methods based on knowledge graphs such the TransE model and the TransH model are applied. By adopting the idea of distributed representation, the data is embedded into low-dimensional dense vectors, which can significantly improve computational efficiency, alleviate data sparsity issues, and meet the requirements of downstream applications. Finally, the effectiveness of the proposed research method is validated by evaluating the embedding effects of the knowledge representation process using the evaluation metrics of link prediction tasks. Our experimental results demonstrate that TransH significantly outperforms TransE on link prediction tasks. © 2023 IEEE.

关键词： Fires

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Delay bounded routing with the maximum belief degree for dynamic uncertain networks

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Journal of Systems engineering and Electronics 2025年第1期36卷 127-138页

作者： MA Ji KANG Rui LI Ruiying ZHANG Qingyuan LIU Liang WANG Xuewang School of Reliability and Systems Engineering Beihang UniversityBeijing 100191China Science and Technology on Reliability and Environmental Engineering Laboratory Beijing 100191China International Innovation Institute Beihang UniversityHangzhou 311115China Institute of Telecommunication and Navigation Satellites China Academy of Space TechnologyBeijing 100094China

Delay aware routing is now widely used to provide efficient network transmission. However, for newly developing or developed mobile communication networks(MCN), only limited delay data can be obtained. In such a network, the delay is with epistemic uncertainty, which makes the traditional routing scheme based on deterministic theory or probability theory not applicable. Motivated by this problem, the MCN with epistemic uncertainty is first summarized as a dynamic uncertain network based on uncertainty theory, which is widely applied to model epistemic uncertainties. Then by modeling the uncertain end-toend delay, a new delay bounded routing scheme is proposed to find the path with the maximum belief degree that satisfies the delay threshold for the dynamic uncertain network. Finally, a lowEarth-orbit satellite communication network(LEO-SCN) is used as a case to verify the effectiveness of our routing scheme. It is first modeled as a dynamic uncertain network, and then the delay bounded paths with the maximum belief degree are computed and compared under different delay thresholds.

关键词： dynamic uncertain network uncertainty theory epistemic uncertainty delay bounded routing maximum belief degree

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Integrating Cu^(+)/Cu^(0)sites on porous nitrogen-doped carbon nanofibers for stable and efficient CO_(2)electroreduction to multicarbon products

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Journal of Energy Chemistry 2025年第2期101卷 453-462,I0010页

作者： Yicheng Chao Jiahao Zhang Qinyue Wu Xinfei Fan Xie Quan Yanming Liu Key Laboratory of Industrial Ecology and Environmental Engineering(MOE) School of Environmental Science and TechnologyDalian University of TechnologyDalian 116024LiaoningChina College of Environmental Science and Engineering Dalian Maritime UniversityDalian 116026LiaoningChina Frontier Science Center for Smart Materials Dalian University of TechnologyDalian 116024LiaoningChina

The Cu^(+)/Cu^(0)sites of copper-based catalysts are crucial for enhancing the production of multicarbon(C_(2+))products from electrochemical CO_(2)reduction reaction(eCO_(2)RR).However,the unstable Cu^(+)and insufficient Cu^(+)/Cu^(0)active sites lead to their limited selectivity and stability for C_(2+)***,we embedded copper oxide(CuO_(x))particles into porous nitrogen-doped carbon nanofibers(CuO_(x)@PCNF)by pyrolysis of the electrospun fiber film containing ZIF-8 and Cu_(2)O *** porous nitrogendoped carbon nanofibers protected and dispersed Cu^(+)species,and its micro porous structure enhanced the interaction between CuO_(x)and reactants during eCO_(2)*** obtained CuO_(x)@PCNF created more effective and stable Cu^(+)/Cu^(0)active *** showed a high Faradaic efficiency of 62.5%for C_(2+)products in Hcell,which was 2 times higher than that of bare CuO_(x)(~31.1%).Furthermore,it achieved a maximum Faradaic efficiency of 80.7%for C_(2+)products in flow *** situ characterization and density functional theory(DFT)calculation confirmed that the N-doped carbon layer protected Cu^(+)from electrochemical reduction and lowered the energy barrier for the dimerization of^(*)*** and exposed Cu^(+)/Cu^(0)active sites enhanced the enrichment of^(*)CO and promoted the C-C coupling reaction on the catalyst surface,which facilitated the formation of C_(2+)products.

关键词： Electrocatalytic CO_(2)reduction Cu^(+)/Cu^(0)sites Multicarbon products C-C coupling Carbon nanofibers

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Fault Diagnosis of Unmanned Aerial Vehicle Based on the Slime Mold Algorithm under Imbalanced Data Conditions 14

Fault Diagnosis of Unmanned Aerial Vehicle Based on the Slim...

引用

14th International Conference on reliability, Maintainability and Safety, ICRMS 2023

作者： Wu, Xinman Zhang, Wenjin Li, Yu Suo, Mingliang Institute of Reliability Engineering National Key Laboratory of Science and Technology on Reliability and Environmental Engineering School of Reliability and Systems Engineering Beihang University Beijing China

ISBN: (纸本)9798350329988

With the rapid progress of technology, the application of unmanned aerial vehicles (UAVs) has become widespread in various civilian and military activities. The research on fault diagnosis during a flight is a critical step towards enhancing the safety of UAV systems. Swarm-inspired heuristic algorithms have attracted significant attention owing to their fast iteration speed and strong optimization capabilities. This paper proposes a UAV fault diagnosis method based on the slime mold algorithm (SMA) under the condition of imbalanced data, thus addressing the issue of low diagnostic accuracy caused by a significantly longer normal flight time compared to the fault flight time in UAV operations. Using a real-world dataset of UAV flight faults with multiple fault patterns, the proposed approach optimizes the parameters of the support vector machine through SMA, thereby improving the fault diagnosis performance during actual UAV flights. © 2023 IEEE.

关键词： Micro air vehicle (MAV)

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