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Microstructure of Cr-B Ohmic and Rectifying Contacts on (0001) 6H Sic

Microscopy and Microanalysis 2020年第S2期3卷 641-642页

作者： R.-J. Liu L. M. Porter M. J. Kim R. W. Carpenter R. F. Davis Science and Engineering of Materials Program and Center for Solid State Science Arizona State University Tempe AZ85287-1704 Department of Materials Science and Engineering North Carolina State University Raleigh NC27695-7907

6H-SiC is a wide band-gap semiconductor. In recent years, a variety of high-power, -temperature, -speed and opto-electronic devices have been produced in 6H-SiC films. The future development of SiC device technology depends on the ability to form good ohmic and Schottky contacts. Plots of the current-voltage (I-V) characteristics of Cr-B contacts on (0001) 6H-SiC revealed that they became the most ohmic-like after annealing at 1000 °C for 240 sec. and rectifying after annealing for 300 sec, therefore TEM analysis of the microstructures of as-deposited and annealed Cr-B films should help in understanding what causes both the ohmic-like and rectifying *** this research, CrxBy film was deposited on vicinal (0001) 6H-SiC substrates by electron beam evaporation at room temperature. The intended phase was CrB2. Fig.l shows the microstructure of the as-deposited specimen. 6H-SiC appears to be a perfect crystal, but the Cr-B film had columnar polycrystalline microstructure.

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Intrinsic in-plane nodal chain and generalized quaternion charge protected nodal link in photonics

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Light(science & Applications) 2021年第5期10卷 881-889页

作者： Dongyang Wang Biao Yang Qinghua Guo Ruo-Yang Zhang Lingbo Xia Xiaoqiang Su Wen-Jie Chen Jiaguang Han Shuang Zhang C.T.Chan Department of Physics Hong Kong University of Science and TechnologyHong KongChina College of Advanced Interdisciplinary Studies National University of Defense TechnologyChangshaChina Institute for Advanced Study Hong Kong University of Science and TechnologyHong KongChina Key Laboratory for Micro-Nano Optoelectronic Devices of Ministry of Education School of Physics and ElectronicsHunan UniversityChangshaChina Institute of Solid State Physics and Department of Physics Shanxi Datong UniversityDatongChina School of Physics&State Key Laboratory of Optoelectronic Materials and Technologies Sun Yat-Sen UniversityGuangzhouChina Center for Terahertz Waves and College of Precision Instrument and Optoelectronics Engineering Tianjin University and the Key Laboratory of Optoelectronics Information and Technology(Ministry of Education)TianjinChina School of Physics&Astronomy University of BirminghamBirminghamUK

Nodal lines are degeneracies formed by crossing bands in three-dimensional momentum ***,these degenerate lines can chain together via touching points and manifest as nodal *** nodal chains are usually embedded in two orthogonal planes and protected by the corresponding mirror ***,we propose and demonstrate an in-plane nodal chain in photonics,where all chained nodal lines coexist in a single mirror plane instead of two orthogonal *** lines are degeneracies formed by crossing bands in three-dimensional momentum ***,these degenerate lines can chain together via touching points and manifest as nodal *** nodal chains are usually embedded in two orthogonal planes and protected by the corresponding mirror ***,we propose and demonstrate an in-plane nodal chain in photonics,where all chained nodal lines coexist in a single mirror plane instead of two orthogonal *** chain point is stabilized by the intrinsic symmetry that is specific to electromagnetic waves at theГpoint of zero *** adding another mirror plane,we find a nodal ring that is constructed by two higher bands and links with the in-plane nodal *** nodal link in momentum space exhibits non-Abelian characteristics on a C_(2)T-invariant plane,where admissible transitions of the nodal link structure are determined by generalized quaternion *** near-field scanning measurements of bi-anisotropic metamaterials,we experimentally mapped out the in-plane nodal chain and nodal link in such *** chain point is stabilized by the intrinsic symmetry that is specific to electromagnetic waves at the r point of zero *** adding another mirror plane,we find a nodal ring that is constructed by two higher bands and links with the in-plane nodal *** nodal link in momentum space exhibits non-Abelian characteristics on a C2T-invariant plane,where admissible transitions of the nodal link structure are determ

关键词： nodal plane mirror

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Manipulating Fano coupling in an opto-thermoelectric field

arXiv

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arXiv 2024年

作者： Lin, Linhan Lepeshov, Sergey Krasnok, Alex Huang, Yu Jiang, Taizhi Peng, Xiaolei Korgel, Brian A. Alu, Andrea Zheng, Yuebing State Key Laboratory of Precision Measurement Technology and Instruments Department of Precision Instrument Tsinghua University Beijing100084 China Department of Electrical and Photonics Engineering DTU Electro Technical University of Denmark Building 343 Kgs. LyngbyDK-2800 Denmark Department of Electrical and Computer Engineering Florida International University MiamiFL33174 United States School of Physics and Electronics Hunan University Changsha410082 China Mc Ketta Department of Chemical Engineering The University of Texas at Austin AustinTX78712 United States Materials Science & Engineering Program Texas Materials Institute The University of Texas at Austin AustinTX78712 United States Department of Electrical and Computer Engineering The University of Texas at Austin AustinTX78712 United States Advanced Science Research Center City University of New York New YorkNY10031 United States Physics Program Graduate Center City University of New York NY10016 United States Walker Department of Mechanical Engineering The University of Texas at Austin AustinTX78712 United States

Fano resonances in photonics arise from the coupling and interference between two resonant modes in structures with broken symmetry. They feature an uneven and narrow and tunable lineshape, and are ideally suited for optical spectroscopy. Many Fano resonance structures have been suggested in nanophotonics over the last ten years, but reconfigurability and tailored design remain challenging. Herein, we propose an all-optical "pick-and-place" approach aimed at assemble Fano metamolecules of various geometries and compositions in a reconfigurable manner. We study their coupling behavior by in-situ dark-field scattering spectroscopy. Driven by a light-directed opto-thermoelectric field, silicon nanoparticles with high quality-factor Mie resonances (discrete states) and low-loss BaTiO3 nanoparticles (continuum states) are assembled into all-dielectric heterodimers, where distinct Fano resonances are observed. The Fano parameter can be adjusted by changing the resonant frequency of the discrete states or the light polarization. We also show tunable coupling strength and multiple Fano resonances by altering the number of continuum states and discrete states in dielectric heterooligomers. Our work offers a general design rule for Fano resonance and an all-optical platform for controlling Fano coupling on demand. Copyright © 2024, The Authors. All rights reserved.

关键词： Light polarization

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Towards Scalable Fabrications and Applications of 2D Layered Material-based Vertical and Lateral Heterostructures

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Chemical research in Chinese Universities 2020年第4期36卷 525-550页

作者： WAN Xi LI Hao CHEN Kun XU Jianbin Engineering Research Center of IoT Technology Applications(Ministry of Education) Department of Electronic EngineeringJiangnan UniversityWuxi 214122P.R.China Department of Electronic Engineering and Materials Science and Technology Research Center The Chinese University of Hong KongShatinN.T.Hong Kong SAR 999077P.R.China State Key Laboratory of Optoelectronic Materials and Technologies School of Electronics and Information Technology and Guangdong Province Key Laboratory of Display MaterialSun Yat-sen UniversityGuangzhou 510275P.R.China

Among 108423 unique,experimentally known 3D compounds,there exist 1825 ones that are either easily or potentially *** increasingly broad library of 2D layered materials(2DLMs)with variable physical properties as well as the unique ability to vertical stacking or lateral stitching 2DLMs into complex heterostructures enables a new dimension for materials engineering and device design,offering novel functional electronics and optoelectronics for flexible *** this review,we present a comprehensive summary of the state-of-the-art scalable fabrication technologies,the unique properties as well as the potential device applications of the emerging 2D ***,we depict an overall picture of the 2D vertical van der Waals ***,we focus on the 2D lateral heterostructures by CVD *** a quick access and full coverage,both the vertical and lateral 2D heterostructures are classified into several types according to their chemical compounds with different *** the end,both the challenges and potential applications of these 2D heterostructures are discussed.

关键词： Two-dimensional(2D) Graphene Hexagonal boron nitride(hBN) Transition metal dichalcogenide Fabrication Vertical Lateral Heterostructure

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Dual orthogonally-polarized lasing assisted by imaginary Fermi arcs in organic microcavities

arXiv

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arXiv 2024年

作者： Long, Teng Ren, Jiahuan Li, Peng Yun, Feng Malpuech, Guillaume Solnyshkov, Dmitry Fu, Hongbing Li, Feng Liao, Qing Beijing Key Laboratory for Optical Materials and Photonic Devices Department of Chemistry Capital Normal University Beijing100048 China College of Physics Science and Technology Hebei University Baoding071002 China Center for Regenerative and Reconstructive Medicine Med-X Institute The First Affiliated Hospital Xi'an Jiaotong University Xi’an710061 China Key Laboratory for Physical Electronics and Devices of the Ministry of Education Shaanxi Key Lab of Information Photonic Technique School of Electronic Science and Engineering Faculty of Electronic and Information Engineering Xi'an Jiaotong University Xi’an710049 China Solid-State Lighting Engineering Research Center Xi'an Jiaotong University Xi’an710049 China Institut Pascal PHOTON-N2 Université Clermont Auvergne CNRS Clermont INP Clermont-FerrandF-63000 France Paris75231 France

The polarization control of micro/nano lasers is an important topic in nanophotonics. Up to now, the simultaneous generation of two distinguishable orthogonally-polarized lasing modes from a single organic microlaser remains a critical challenge. Here, we demonstrate simultaneously orthogonally-polarized dual lasing from a microcavity filled with an organic single crystal exhibiting selective strong coupling. We show that the non-Hermiticity due to polarization-dependent losses leads to the formation of real and imaginary Fermi arcs with exceptional points. Simultaneous orthogonally-polarized lasing becomes possible thanks to the eigenstate mixing by the photonic spin-orbit coupling at the imaginary Fermi arcs. Our work provides a novel way to develop linearly-polarized lasers and paves the way for the future fundamental research in topological photonics, non-Hermitian optics, and other fields. Copyright © 2024, The Authors. All rights reserved.

关键词： Microcavities

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Transition of photoconductive and photovoltaic operation modes in amorphous Ga_2O_3-based solar-blind detectors tuned by oxygen vacancies

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Chinese Physics B 2019年第2期28卷 71-76页

作者： Yan-Fang Zhang Xuan-Hu Chen Yang Xu Fang-Fang Ren Shu-Lin Gu Rong Zhang You-Dou Zheng Jian-Dong Ye Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials and School of Electronic Science and Engineering Nanjing University Wuxi Institute of Technology Collaborative Innovation Center of Solid-State Lighting and Energy-Saving Electronics Nanjing University

We report on the transition of photovoltaic and photoconductive operation modes of the amorphous Ga_2O_3-based solar-blind photodetectors in metal–semiconductor–metal(MSM) configurations. The conversion from Ohmic to Schottky contacts at Ti/Ga_2O_3 interface is realized by tuning the conductivity of amorphous Ga_2O_3 films with delicate control of oxygen flux in the sputtering process. The abundant donor-like oxygen vacancies distributed near the Ti/Ga_2O_3 interface fascinate the tunneling process across the barrier and result in the formation of Ohmic contacts. As a consequence, the serious sub-gap absorption and persistent photoconductivity(PPC) effect degrades the performance of the photoconductive detectors. In contrast, the photovoltaic device with a Schottky contact exhibits an ultra-low dark current less than 1 pA,a high detectivity of 9.82×10^(12) cm·Hz^(1/2)·W^(-1), a fast response time of 243.9 μs, and a high ultraviolet C(UVC)-toultraviolet A(UVA) rejection ratio of 103. The promoting performance is attributed primarily to the reduction of the subgap states and the resultant suppression of PPC effect. With simple architecture, low fabrication cost, and easy fusion with modern high-speed integrated circuitry, these results provide a cost-effective way to realize high performance solar-blind photodetectors towards versatile practical applications.

关键词： amorphous gallium oxide solar-blind photodetector photovoltaic photoconductive

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Dirac nodal lines and nodal loops in the topological kagome superconductor CsV3Sb5

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Physical Review B 2022年第8期106卷 L081101-L081101页

作者： Zhanyang Hao Yongqing Cai Yixuan Liu Yuan Wang Xuelei Sui Xiao-Ming Ma Zecheng Shen Zhicheng Jiang Yichen Yang Wanling Liu Qi Jiang Zhengtai Liu Mao Ye Dawei Shen Yi Liu Shengtao Cui Jiabin Chen Le Wang Cai Liu Junhao Lin Jianfeng Wang Bing Huang Jia-Wei Mei Chaoyu Chen Shenzhen Institute for Quantum Science and Engineering and Department of Physics Southern University of Science and Technology Shenzhen 518055 China International Quantum Academy Shenzhen 518048 China Beijing Computational Science Research Center Beijing 100193 China State Key Laboratory of Functional Materials for Informatics and Center for Excellence in Superconducting Electronics Shanghai Institute of Microsystem and Information Technology Chinese Academy of Sciences Shanghai 200050 China National Synchrotron Radiation Laboratory University of Science and Technology of China Hefei 230029 China School of Physics Beihang University Beijing 100191 China Shenzhen Key Laboratory of Advanced Quantum Functional Materials and Devices Southern University of Science and Technology Shenzhen 518055 China

The intertwining of charge order, superconductivity, and band topology has promoted the AV3Sb5 (A=K, Rb, Cs) family of materials to the center of attention in condensed matter physics. Underlying those mysterious macroscopic properties such as giant anomalous Hall conductivity (AHC) and chiral charge density wave is their nontrivial band topology. While there have been numerous experimental and theoretical works investigating the nontrivial band structure and especially the van Hove singularities, the exact topological phase of this family remains to be clarified. In this work, we identify CsV3Sb5 as a Dirac nodal line semimetal based on the observation of multiple Dirac nodal lines and loops close to the Fermi level. Combining photoemission spectroscopy and density functional theory, we identify two groups of Dirac nodal lines along the kz direction and one group of Dirac nodal loops in the A−H−L plane. These nodal loops are located at the Fermi level within the instrumental resolution limit. Importantly, our first-principles analyses indicate that these nodal loops may be a crucial source of the mysterious giant AHC observed. Our results not only provide a clear picture to categorize the band structure topology of this family of materials, but also suggest the dominant role of topological nodal loops in shaping their transport behavior.

关键词： Topological materials Topological phases of matter Topological superconductors Node-line semimetals Angle-resolved photoemission spectroscopy Density functional calculations

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Recent progress of integrated circuits and optoelectronic chips

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science China(Information sciences) 2021年第10期64卷 103-135页

作者： Yue HAO Shuiying XIANG Genquan HAN Jincheng ZHANG Xiaohua MA Zhangming ZHU Xingxing GUO Yahui ZHANG Yanan HAN Ziwei SONG Yan LIU Ling YANG Hong ZHOU Jiangyi SHI Wei ZHANG Min XU Weisheng ZHAO Biao PAN Yangqi HUANG Qi LIU Yimao CAI Jian ZHU Xin OU Tiangui YOU Huaqiang WU Bin GAO Zhiyong ZHANG Guoping GUO Yonghua CHEN Yong LIU Xiangfei CHEN Chunlai XUE Xingjun WANG Lixia ZHAO Xihua ZOU Lianshan YAN Ming LI School of Microelectronics Xidian University State Key Laboratory of Integrated Service Networks Xidian University National Integrated Circuit Innovation Center School of Microelectronics Fudan University School of Integrated Circuit Science and Engineering Beihang University China Center for Information Industry Development Frontier Institute of Chip and System Fudan University Institute of Microelectronics Peking University Nanjing Electronic Devices Institute State Key Laboratory of Functional Material for Informatics Shanghai Institute of Microsystem and Information Technology Chinese Academy of Sciences Institute of Microelectronics Tsinghua University Center for Carbon-based Electronics Department of Electronics Peking University CAS Key Laboratory of Quantum Information University of Science and Technology of China CAS Center for Excellence and Synergetic Innovation Center in Quantum Information and Quantum Physics University of Science and Technology of China Origin Quantum Computing Company Limited Key Laboratory of Flexible Electronics & Institute of Advanced Materials Nanjing Tech University State Key Laboratory of Electronic Thin Films and Integrated Devices School of Optoelectronic Science and EngineeringUniversity of Electronic Science and Technology of China National Laboratory of Solid State Microstructures & College of Engineering and Applied Sciences Nanjing University State Key Laboratory on Integrated Optoelectronics Institute of Semiconductors Chinese Academy of Sciences Center of Materials Science and Optoelectronics Engineering University of Chinese Academy of Sciences State Key Laboratory of Advanced Optical Communication Systems and Networks School of Electronics Engineering and Computer Science Peking University School of Electrical and Electronic Engineering Tiangong University Center for Information Photonics and Communications School of Information Science and TechnologySouthwest Jiaotong University School of Electronic Electrical and Communication Engineering

Integrated circuits(ICs) and optoelectronic chips are the foundation stones of the modern information society. The IC industry has been driven by the so-called "Moore's law" in the past 60 years, and now has entered the post Moore's law era. In this paper, we review the recent progress of ICs and optoelectronic chips. The research status, technical challenges and development trend of devices, chips and integrated technologies of typical IC and optoelectronic chips are focused on. The main contents include the development law of IC and optoelectronic chip technology, the IC design and processing technology, emerging memory and chip architecture, brain-like chip structure and its mechanism, heterogeneous integration, quantum chip technology, silicon photonics chip technology, integrated microwave photonic chip, and optoelectronic hybrid integrated chip.

关键词： integrated circuit semiconductor science and technology optoelectronic device and chip photonic integrated circuit wide bandgap semiconductors silicon photonics hybrid integration quantum chip integrated microwave photonic photonic neural computing

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Mode Structures and Damping of Quantized Spin Waves in Ferromagnetic Nanowires

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Chinese Physics Letters 2020年第8期37卷 142-146页

作者： Qingwei Fu Yong Li Lina Chen Fusheng Ma Haotian Li Yongbing Xu Bo Liu Ronghua Liu and Youwei Du National Laboratory of Solid State Microstructures School of Physics and Collaborative Innovation Center of Advanced MicrostructuresNanjing UniversityNanjing 210093China Jiangsu Key Laboratory of Opto-Electronic Technology Center for Quantum Transport and Thermal Energy ScienceSchool of Physics and TechnologyNanjing Normal UniversityNanjing 210023China York-Nanjing Joint Center(YNJC)for Spintronics and Nanoengineering School of Electronics Science and EngineeringNanjing UniversityNanjing 210093China Spintronics and Nanodevice Laboratory Department of ElectronicsUniversity of YorkYork YO105DDUnited Kingdom Key Laboratory of Spintronics Materials Devices and Systems of Zhejiang ProvinceHangzhou 311300China

Magnonic devices based on spin waves are considered as a new generation of energy-efficient and high-speed devices for storage and processing of *** we experimentally demonstrate that three distinct dominated magneto-dynamic modes are excited simultaneously and coexist in a transversely magnetized ferromagnetic wire by the ferromagnetic resonance(FMR)*** the uniform FMR mode,the spin-wave well mode,the backward volume magnetostatic spin-wave mode,and the perpendicular standing spin-wave mode are experimentally observed and further confirmed with more detailed spatial profiles by micromagnetic ***,our experimental approach can also access and reveal damping coefficients of these spin-wave modes,which provides essential information for development of magnonic devices in the future.

关键词： technique. ferromagnetic wave

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Phase Shift and Magnetic Anisotropy Induced Field Splitting of Impurity states in (Li1−xFex)OHFeSe Superconductor

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Physical Review Letters 2023年第20期130卷 206001-206001页

作者： Tianzhen Zhang Yining Hu Wei Su Chen Chen Xu Wang Dong Li Zouyouwei Lu Wentao Yang Qingle Zhang Xiaoli Dong Rui Wang Xiaoqun Wang Donglai Feng Tong Zhang Department of Physics State Key Laboratory of Surface Physics and Advanced Material Laboratory Fudan University Shanghai 200438 China Beijing Computational Science Research Center Beijing 100084 China College of Physics and Electronic Engineering Center for Computational Sciences Sichuan Normal University Chengdu 610068 China Beijing National Laboratory for Condensed Matter Physics Institute of Physics Chinese Academy of Sciences Beijing 100190 China School of Physical Sciences University of Chinese Academy of Sciences Beijing 100049 China Songshan Lake Materials Laboratory Dongguan Guangdong 523808 China National Laboratory of Solid State Microstructures and Department of Physics Nanjing University Nanjing 210093 China Collaborative Innovation Center for Advanced Microstructures Nanjing 210093 China School of Physics Zhejiang University Hangzhou 310058 Zhejiang China National Synchrotron Radiation Laboratory and Department of Physics University of Science and Technology of China Hefei 230026 China Shanghai Research Center for Quantum Sciences Shanghai 201315 China

Revealing the energy and spatial characteristics of impurity-induced states in superconductors is essential for understanding their mechanism and fabricating a new quantum state by manipulating impurities. Here, by using high-resolution scanning tunneling microscopy and spectroscopy, we investigate the spatial distribution and magnetic field response of the impurity states in (Li1−xFex)OHFeSe. We detect two pairs of strong in-gap states on the “dumbbell-shaped” defects. They display damped oscillations with different phase shifts and a direct phase—energy correlation. These features have long been predicted for the classical Yu-Shiba-Rusinov (YSR) state and are demonstrated here with unprecedented resolution for the first time. Moreover, upon applying magnetic field, all in-gap state peaks remarkably split into two rather than shift, and the splitting strength is field orientation dependent. Via detailed numerical model calculations, we find such an anisotropic splitting behavior can be naturally induced by a high-spin impurity coupled to an anisotropic environment, highlighting how magnetic anisotropy affects the behavior of YSR states.

关键词： Impurities in superconductors Superconductivity Numerical Renormalization Group Scanning tunneling microscopy Scanning tunneling spectroscopy

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